JAN2N2609 [MICROSEMI]
P-CHANNEL J-FET; P沟道J- FET
| 型号： | JAN2N2609 |
| 厂家： | 
Microsemi |
| 描述： | P-CHANNEL J-FET |
| 文件： | 总1页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
P-CHANNEL J-FET
Qualified per MIL-PRF-19500/ 296
Devices
Qualified Level
2N2609
JAN
ABSOLUTE MAXIMUM RATINGS (TA = +250C unless otherwise noted)
Parameters / Test Conditions
Symbol
VGSS
PD
Top, Tstg
Value
30
300
-65 to +200
Units
V
Gate-Source Voltage
(1)
Power Dissipation
TA = +250C
mW
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.71 mW/0C for TA > +250C.
0C
TO-18
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
PARAMETERS / TEST CONDITIONS
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 mAdc
Gate Reverse Current
VDS = 0, VGS = 30 Vdc
Symbol
V(BR)GSS
IGSS
Min.
Max.
Units
30
Vdc
30
hAdc
VDS = 0, VGS = 15 Vdc
22.5
Drain Current
VGS = 0, VDS = 5.0 Vdc
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 mAdc
IDDSS
-2.0
-10.0
6.0
mAdc
Vdc
VGS(off)
0.75
Magnitude of Small-Signal, Common-Source Short-Circuit Forward
Transfer Admittance
½Yfs2½
mmho
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
Small-Signal, Common-Source Short-Circuit Input Capacitance
VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz
Common-Source Spot Noise Figure
VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz
BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 220 W
2,000
6,250
10
Ciss
pF
NF
3.0
dB
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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