JAN2N2880 [MICROSEMI]
PNP POWER SILICON TRANSISTOR; PNP功率硅晶体管
| 型号： | JAN2N2880 |
| 厂家： | 
Microsemi |
| 描述： | PNP POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 315
Devices
Qualified Level
JAN
2N2880
2N3749
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Value
80
Units
Vdc
Vdc
Vdc
Adc
Adc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
VCEO
VCBO
VEBO
IB
110
8.0
0.5
5.0
Collector Current
IC
Total Power Dissipation @ TA = 250C (1)
2.0
30
W
PT
@ TC = 1000C (2)
-65 to +200
0C
Operating & Storage Junction Temperature Range
Top, T
stg
TO-59*
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Max.
Unit
0C/W
3.33
R
qJC
1) Derate linearly 11.4 mW/0C for TA > 250C
2) Derate linearly 300 mW/0C for TC > 1000C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Emitter-Base Breakdown to Voltage
IE = 10 mAdc
80
110
8.0
Vdc
Vdc
V(BR)
CEO
V(BR)
CBO
Vdc
V(BR)
EBO
Collector-Emitter Cutoff Current
VCE = 60 Vdc
Collector-Base Cutoff Current
VCB = 80 Vdc
Collector-Emitter Cutoff Current
VCE = 110 Vdc, VBE = -0.5
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
20
0.2
1.0
0.2
ICEO
ICBO
ICEX
IEBO
mAdc
mAdc
mAdc
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2880, 2N3749 JAN SERIES
ELECTRICAL CHARACTERISTICS (Con’t)
Characteristics
ON CHARACTERISTICS
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
Base-Emitter Voltage Non-Saturated
VCE = 2.0 Adc, IC =1.0 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
120
120
40
40
15
hFE
VBE
1.2
Vdc
Vdc
0.25
1.5
VCE(sat)
IC = 5.0 Adc, IB = 0.5 Adc
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
VBE(sat)
1.2
12
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 10 MHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 5.0 Vdc, f = 1 kHz
Output Capacitance
3.0
40
½hfe½
hfe
140
150
pF
Cobo
VCB = 10 Vdc, IE = 0, 100 £ f £ 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 1000C, t = 10 s
Test 1
VCE = 80 Vdc, IC = 80 mAdc
Test 2
VCE = 20 Vdc, IC = 1.5 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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