GA100E3 [MICROSEMI]

Silicon Controlled Rectifier, 0.628A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18;
GA100E3
型号: GA100E3
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Silicon Controlled Rectifier, 0.628A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18

文件: 总1页 (文件大小:70K)
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GA100NA60U

INSULATED GATE BIPOLAR TRANSISTOR

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80 IRF

GA100NA60U

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

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26 VISHAY

GA100NA60UP

Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

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13 VISHAY

GA100NA60UPBF

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

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0 VISHAY

GA100T802MZ1

Optical disk devices for RF signal detection

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16 ETC

GA100T8R42MZ

Optical disk devices for RF signal detection

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16 ETC

GA100T8R6MZ

Optical disk devices for RF signal detection

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23 ETC

GA100T8R7MZ

Optical disk devices for RF signal detection

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9 ETC

GA100T8W1MZ

Optical disk devices for RF signal detection

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10 ETC

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41 ETC

GA100TS120U

HALF-BRIDGE IGBT INT-A-PAK

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73 IRF

GA100TS120U

HALF-BRIDGE IGBT INT-A-PAK

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14 IRF

GA100TS120UPBF

'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A

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17 VISHAY

GA100TS60SF

Standard Speed IGBT

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21 IRF

GA100TS60SF

Standard Speed IGBT

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7 IRF