GA100NA60UPBF [VISHAY]

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel;
GA100NA60UPBF
型号: GA100NA60UPBF
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总10页 (文件大小:252K)
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GA100T802MZ1

Optical disk devices for RF signal detection

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16 ETC

GA100T8R42MZ

Optical disk devices for RF signal detection

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16 ETC

GA100T8R6MZ

Optical disk devices for RF signal detection

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23 ETC

GA100T8R7MZ

Optical disk devices for RF signal detection

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9 ETC

GA100T8W1MZ

Optical disk devices for RF signal detection

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10 ETC

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41 ETC

GA100TS120U

HALF-BRIDGE IGBT INT-A-PAK

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73 IRF

GA100TS120U

HALF-BRIDGE IGBT INT-A-PAK

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14 IRF

GA100TS120UPBF

'Half-Bridge' IGBT INT-A-PAK (Ultrafast Speed IGBT), 100 A

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17 VISHAY

GA100TS60SF

Standard Speed IGBT

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21 IRF

GA100TS60SF

Standard Speed IGBT

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7 IRF

GA100TS60SFPBF

'Half-Bridge' IGBT INT-A-PAK (Standard Speed IGBT), 100 A

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22 VISHAY

GA100TS60SQ

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

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20 IRF

GA100TS60SQ

HALF-BRIDGE IGBT INT-A-PAK Standard Speed IGBT

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18 IRF

GA100TS60SQPBF

Insulated Gate Bipolar Transistor, 220A I(C), 600V V(BR)CES, N-Channel, INT-A-PAK-11

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0 IRF