APTGF15X120T3G [MICROSEMI]
3 Phase bridge NPT IGBT Power Module; 3相桥NPT IGBT功率模块
| 型号： | APTGF15X120T3G |
| 厂家： | 
Microsemi |
| 描述： | 3 Phase bridge NPT IGBT Power Module |
| 文件： | 总6页 (文件大小：310K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGF15X120T3G
VCES = 1200V
3 Phase bridge
IC = 15A @ Tc = 80°C
NPT IGBT Power Module
15
16
19
31
Application
•
Motor control
23
25
29
30
14
Features
20
11
•
Non Punch Through (NPT) Fast IGBT
18
22
28
R1
-
-
-
-
-
-
-
Low voltage drop
Low tail current
8
7
4
3
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
13
10
12
Low leakage current
2
RBSOA and SCSOA rated
It is recommended to connect a decoupling capacitor
•
•
•
•
Kelvin emitter for easy drive
Very low stray inductance
between pins 31 & 2 to reduce switching overvoltages, if DC
Power is connected between pins 15, 16 & 12.
Pins 15 & 16 must be shorted together.
High level of integration
Internal thermistor for temperature monitoring
Benefits
28 27 26 25
23 22
20 19 18
•
Outstanding performance at high frequency
operation
29
30
16
15
•
•
•
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal
for easy PCB mounting
31
32
14
13
•
•
Low profile
RoHS compliant
2
3
4
7
8
10 11
12
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1200
25
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
15
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
60
±20
140
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
30A@1150V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 6
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APTGF15X120T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
500
3.7
V
GE = 0V
ICES
Zero Gate Voltage Collector Current
µA
VCE = 1200V
2.5
4
3.2
4.0
VGE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
IGES
V
IC = 15A
VGE = VCE, IC = 1mA
6
400
V
nA
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Qg
Qge
Qgc
Td(on)
Tr
Input Capacitance
1000
VGE = 0V
VCE = 25V
f = 1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
150
70
99
VGE = 15V
V
Bus = 600V
nC
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
10
IC =15A
70
60
Inductive Switching (25°C)
V
GE = 15V
50
315
ns
VBus = 600V
IC = 15A
Td(off) Turn-off Delay Time
Tf
Fall Time
30
RG = 33Ω
Inductive Switching (125°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
60
50
356
VGE = 15V
ns
VBus = 600V
IC = 15A
Td(off) Turn-off Delay Time
Tf
Fall Time
40
RG = 33Ω
V
GE = 15V
Eon
Turn-on Switching Energy
Tj = 125°C
Tj = 125°C
2
1
VBus = 600V
IC = 15A
mJ
Eoff
Turn-off Switching Energy
RG = 33Ω
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
IRM
IF
1200
V
µA
A
Tj = 25°C
Tj = 125°C
Tc = 80°C
100
500
VR=1200V
15
IF = 15A
IF = 30A
IF = 15A
2.8
3.4
2.4
3.3
VF
Diode Forward Voltage
V
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
240
290
260
960
trr
Reverse Recovery Time
Reverse Recovery Charge
ns
IF = 15A
VR = 800V
di/dt =200A/µs
Qrr
nC
2 - 6
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APTGF15X120T3G
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ Max Unit
R25
Resistance @ 25°C
50
kΩ
K
B 25/85 T25 = 298.15 K
3952
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
1
1
T
25/ 85
exp B
−
T25
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.9
RthJC
Junction to Case Thermal Resistance
°C/W
2
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
2500
-40
-40
-40
2.5
V
150
125
100
4.7
°C
TSTG
TC
Operating Case Temperature
Torque Mounting torque
To heatsink
M4
N.m
g
Wt
Package Weight
110
SP3 Package outline (dimensions in mm)
2 8
1 7
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
3 - 6
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APTGF15X120T3G
Typical Performance Curve
Output Characteristics (VGE=10V)
Output characteristics (VGE=15V)
70
60
50
40
30
20
10
0
16
14
12
10
8
250µs Pulse Test
< 0.5% Duty cycle
250µs Pulse Test
< 0.5% Duty cycle
TJ=25°C
TJ=25°C
6
TJ=125°C
4
TJ=125°C
2
0
0
0.5
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
6
7
8
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
Gate Charge
Transfer Characteristics
70
60
50
40
30
20
10
0
18
IC = 15A
J = 25°C
VCE=240V
250µs Pulse Test
< 0.5% Duty cycle
16
14
12
10
8
T
VCE=600V
VCE=960V
6
TJ=125°C
TJ=25°C
4
2
0
0
20
40
60
80
100
120
0
2.5
5
7.5
10
12.5
15
VGE, Gate to Emitter Voltage (V)
Gate Charge (nC)
On state Voltage vs Junction Temperature
On state Voltage vs Gate to Emitter Volt.
9
6
5
4
3
2
1
0
TJ = 125°C
250µs Pulse Test
250µs Pulse Test
Ic=30A
8
7
6
5
4
3
2
1
0
< 0.5% Duty cycle
< 0.5% Duty cycle
VGE = 15V
Ic=30A
Ic=15A
Ic=15A
Ic=7.5A
Ic=7.5A
9
10
11
12
13
14
15
16
-50
-25
0
25
50
75
100 125
V
GE, Gate to Emitter Voltage (V)
TJ, Junction Temperature (°C)
DC Collector Current vs Case Temperature
Breakdown Voltage vs Junction Temp.
40
35
30
25
20
15
10
5
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125 150
TC, Case Temperature (°C)
TJ, Junction Temperature (°C)
4 - 6
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APTGF15X120T3G
Turn-On Delay Time vs Collector Current
Turn-Off Delay Time vs Collector Current
75
70
65
60
55
50
400
350
300
250
200
VCE = 600V
VGE=15V,
TJ=125°C
RG = 33Ω
VGE = 15V
VGE=15V,
TJ=25°C
VCE = 600V
RG = 33Ω
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
Current Fall Time vs Collector Current
160
120
80
40
0
50
45
40
35
30
25
20
VCE = 600V
R
G = 33Ω
TJ = 125°C
TJ = 25°C
VGE=15V
VCE = 600V, VGE = 15V, RG = 33Ω
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I
CE, Collector to Emitter Current (A)
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
2.5
Turn-On Energy Loss vs Collector Current
8
7
6
5
4
3
2
1
0
VCE = 600V
TJ=125°C,
VCE = 600V
GE = 15V
G = 33Ω
TJ = 125°C
R
G = 33Ω
V
R
2
V
GE=15V
1.5
1
TJ = 25°C
TJ=25°C,
VGE=15V
0.5
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
I
CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
8
7
6
5
4
3
2
1
0
35
30
25
20
15
10
5
VCE = 600V
V
GE = 15V
TJ= 125°C
Eon, 15A
Eoff, 15A
0
0
20
40
60
80
100
120
0
400
800
1200
VCE, Collector to Emitter Voltage (V)
Gate Resistance (Ohms)
5 - 6
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APTGF15X120T3G
Capacitance vs Collector to Emitter Voltage
Operating Frequency vs Collector Current
10000
1000
100
120
100
80
60
40
20
0
VCE = 600V
D = 50%
Cies
R
G = 33Ω
TJ = 125°C
TC= 75°C
Coes
Cres
Hard
switching
10
0
10
20
30
40
50
0
5
10
15
20
25
VCE, Collector to Emitter Voltage (V)
IC, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8
0.6
0.4
0.2
0
0.9
0.7
0.5
0.3
Single Pulse
0.1
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
6 - 6
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