APT6021BLLG [MICROSEMI]
Power Field-Effect Transistor, 29A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN;
| 型号： | APT6021BLLG |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, 29A I(D), 600V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN |
| 文件： | 总5页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT6021BLL
APT6021SLL
600V 29A 0.210Ω
R
BLL
POWER MOS 7 MOSFET
D3PAK
TO-247
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON)
and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
SLL
D
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
• IncreasedPowerDissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT6021BLL_SLL
UNIT
VDSS
ID
Drain-Source Voltage
600
29
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
116
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
±30
±40
Watts
W/°C
400
PD
3.20
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
29
1
EAR
EAS
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
30
4
1300
STATICELECTRICALCHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
UNIT
Volts
Ohms
BVDSS
RDS(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
2
Drain-Source On-State Resistance
(VGS = 10V, ID = 14.5A)
0.210
100
500
±100
5
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
IDSS
µA
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT6021BLL_SLL
TestConditions
UNIT
MIN
TYP
MAX
Ciss
Coss
Crss
Qg
Input Capacitance
3470
635
48
V
= 0V
GS
Output Capacitance
pF
V
= 25V
DS
f = 1 MHz
Reverse Transfer Capacitance
3
Total Gate Charge
V
= 10V
80
GS
V
= 300V
Qgs
Qgd
td(on)
tr
DD
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
20
I
= 29A @ 25°C
D
44
RESISTIVESWITCHING
10
V
= 15V
GS
7
V
= 300V
DD
I
= 29A @ 25°C
td(off)
25
Turn-off Delay Time
Fall Time
D
R
= 1.6Ω
G
tf
4
INDUCTIVESWITCHING@25°C
6
Eon
Eoff
Eon
Eoff
Turn-on Switching Energy
325
205
500
250
V
= 400V, V = 15V
GS
DD
I
= 29A, R = 5Ω
Turn-off Switching Energy
D
G
µJ
INDUCTIVESWITCHING@125°C
6
Turn-on Switching Energy
V
= 400V V = 15V
GS
DD
I
= 29A, R = 5Ω
Turn-off Switching Energy
D
G
SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS
Symbol
MIN
TYP
MAX
29
Characteristic / Test Conditions
UNIT
IS
Continuous Source Current (Body Diode)
Amps
ISM
1
116
1.3
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
VSD
t rr
(VGS = 0V, IS = -29A)
Volts
ns
664
Reverse Recovery Time (IS = -29A, dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -29A, dlS/dt = 100A/µs)
Q rr
9.29
µC
dv
/
dv
5
V/ns
8
Peak Diode Recovery
/
dt
dt
THERMALCHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.31
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 3.09mH, R = 25Ω, Peak I = 29A
j
G
L
dv
5
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
≤ -I 29A
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
S
D
DSS
6
Eon includes diode reverse recovery. See figures 18, 20.
APTReservestherighttochange,withoutnotice,thespecificationsandinformationcontainedherein.
0.35
0.30
0.9
0.25
0.7
0.20
Note:
0.5
0.15
t
1
0.3
0.10
t
2
t
1
Duty Factor D =
/
t
2
0.05
0
Peak T = P
x Z + T
0.1
J
DM
θJC C
0.05
SINGLEPULSE
10-3
10-5
10-4
10-2
10-1
1.0
RECTANGULARPULSEDURATION(SECONDS)
FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION
Typical Performance Curves
APT6021BLL_SLL
80
60
40
V
=15 &10V
GS
RC MODEL
Junction
temp. (°C)
8V
0.131
0.180
0.00789F
0.161F
7.5V
7V
Power
(watts)
6.5V
20
0
Case temperature. (°C)
6V
5.5V
0
5
10
15
20
25
30
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
1.2
100
NORMALIZED TO
V
> I (ON) x
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
R
(ON)MAX.
DS
DS
D
V
= 10V
@
14.5A
90
80
70
60
50
40
30
20
GS
1.15
1.10
1.05
1.00
V
=10V
GS
V
=20V
GS
T
T
= +125°C
J
= +25°C
J
0.95
0.90
10
0
T = -55°C
J
0
2
4
6
8
10
0
10
20
30
40
50
60
V
,GATE-TO-SOURCEVOLTAGE(VOLTS)
I ,DRAINCURRENT(AMPERES)
GS
D
FIGURE4, TRANSFERCHARACTERISTICS
FIGURE5,R (ON)vsDRAINCURRENT
DS
1.15
1.10
1.05
1.00
30
25
20
15
10
0.95
0.90
5
0
25
50
75
100
125
150
-50 -25
0
25
50 75 100 125 150
T ,CASETEMPERATURE(°C)
T ,JUNCTIONTEMPERATURE(°C)
C
J
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
2.5
1.2
I
= 14.5A
= 10V
D
V
GS
1.1
1.0
0.9
0.8
2.0
1.5
1.0
0.5
0.0
0.7
0.6
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
T ,JUNCTIONTEMPERATURE(°C)
T ,CASETEMPERATURE(°C)
J
C
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
APT6021BLL_SLL
Typical Performance Curves
116
10,000
1,000
OPERATIONHERE
C
iss
LIMITEDBYR (ON)
DS
50
100µS
C
oss
10
100
10
C
rss
1mS
T
=+25°C
C
T =+150°C
J
SINGLEPULSE
10mS
1
16
12
8
1
10
100
600
0
V
10
20
30
40
50
V
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
,DRAIN-TO-SOURCEVOLTAGE(VOLTS)
DS
DS
FIGURE10,MAXIMUMSAFEOPERATINGAREA
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
200
I
= 29A
D
100
V
=120V
DS
T =+150°C
J
V
=300V
T =+25°C
J
DS
V
=480V
10
DS
4
0
1
0
20
40
60
80
100
120
0.3
V
0.5
0.7
0.9
1.1
1.3
1.5
Q ,TOTALGATECHARGE(nC)
,SOURCE-TO-DRAINVOLTAGE(VOLTS)
g
SD
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
70
60
V
= 400V
DD
= 5Ω
R
T
G
60
50
40
30
20
= 125°C
J
t
L = 100µH
d(off)
50
V
= 400V
DD
= 5Ω
t
f
R
T
G
40
30
20
= 125°C
J
L = 100µH
t
r
t
d(on)
10
0
10
0
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
I (A)
D
D
FIGURE 14, DELAY TIMES vs CURRENT
FIGURE 15, RISE AND FALL TIMES vs CURRENT
1000
800
600
400
1400
1200
1000
800
V
= 400V
DD
= 5Ω
V
I
= 400V
DD
= 29A
R
T
G
D
= 125°C
J
T = 125°C
J
E
off
L = 100µH
L = 100µH
EON includes
E
on
EON includes
diode reverse recovery.
diode reverse recovery.
E
on
600
400
E
off
200
0
200
0
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
R ,GATERESISTANCE(Ohms)
D
G
FIGURE16, SWITCHING ENERGYvs CURRENT
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT6021BLL_SLL
Gate Voltage
10 %
90%
Gate Voltage
T
= 125 C
T
= 125 C
J
J
t
d(off)
t
d(on)
tr
90%
Drain Current
Drain Voltage
Drain Voltage
Drain Current
90%
t
f
5 %
5 %
10%
0
10 %
Switching Energy
Switching Energy
Figure19,Turn-offSwitchingWaveformsandDefinitions
Figure18,Turn-onSwitchingWaveformsandDefinitions
APT15DF60
VDS
ID
VDD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
D3PAKPackageOutline
TO-247 Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
15.95 (.628)
16.05 (.632)
13.41 (.528)
13.51 (.532)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15 (.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99 (.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
1.01 (.040)
1.40 (.055)
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’sproductsarecoveredbyoneormoreofU.S.patents4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058andforeignpatents. USandForeignpatentspending. AllRightsReserved.
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