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APT6021SFLL [ADPOW]

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.; 功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。
APT6021SFLL
型号： APT6021SFLL
厂家： ADVANCED POWER TECHNOLOGY    ADVANCED POWER TECHNOLOGY
描述：

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
功率MOS 7TM是新一代低损耗，高电压，N沟道增强型功率MOSFET 。

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APT6021BFLL  
APT6021SFLL  
600V 29A 0.210W  
TM  
BFLL  
FREDFET  
POWER MOS 7  
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel  
enhancement mode power MOSFETS. Both conduction and switching  
losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)  
and Qg. Power MOS 7TM combines lower conduction and switching losses  
along with exceptionally fast switching speeds inherent with APT's  
patented metal gate structure.  
D3PAK  
TO-247  
SFLL  
D
• Lower Input Capacitance  
• Lower Miller Capacitance  
• Lower Gate Charge, Qg  
• IncreasedPowerDissipation  
• Easier To Drive  
• TO-247 or Surface Mount D3PAK Package  
G
S
•
FAST RECOVERY BODY DIODE  
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT6021  
600  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
Volts  
Continuous Drain Current @ TC = 25°C  
29  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
116  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
Watts  
W/°C  
400  
PD  
3.20  
-55 to 150  
300  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
29  
1
EAR  
EAS  
30  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
1300  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
600  
29  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, 0.5 ID[Cont.])  
Ohms  
µA  
0.210  
250  
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)  
IDSS  
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 1mA)  
1000  
±100  
5
IGSS  
nA  
VGS(th)  
Volts  
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
USA  
405 S.W. Columbia Street  
Chemin de Magret  
Bend, Oregon 97702-1035  
F-33700 Merignac - France  
Phone: (541) 382-8028  
Phone: (33) 5 57 92 15 15  
FAX: (541) 388-0364  
FAX: (33) 5 56 47 97 61  
EUROPE  
APT6021 BFLL - SFLL  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
TestConditions  
MIN  
MIN  
MIN  
TYP  
3310  
590  
37  
MAX  
UNIT  
Ciss  
Coss  
Crss  
Qg  
InputCapacitance  
VGS = 0V  
VDS = 25V  
f = 1 MHz  
OutputCapacitance  
pF  
Reverse Transfer Capacitance  
3
VGS = 10V  
Total Gate Charge  
76  
VDD = 0.5 VDSS  
Qgs  
Qgd  
td(on)  
tr  
nC  
ns  
Gate-SourceCharge  
Gate-Drain("Miller")Charge  
Turn-onDelayTime  
Rise Time  
18  
ID = ID [Cont.] @ 25°C  
34  
15  
V
GS = 15V  
VDD = 0.5 VDSS  
ID = ID [Cont.] @ 25°C  
RG = 1.6W  
10  
td(off)  
tf  
Turn-offDelayTime  
FallTime  
35  
10  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
TYP  
MAX  
29  
UNIT  
Continuous Source Current (Body Diode)  
IS  
Amps  
1
ISM  
VSD  
Pulsed Source Current (Body Diode)  
116  
1.3  
15  
2
Diode Forward Voltage  
Peak Diode Recovery dv  
Reverse Recovery Time  
(VGS = 0V, IS = -ID [Cont.])  
Volts  
V/ns  
5
dv  
/
/
dt  
dt  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
250  
525  
ns  
µC  
trr  
(IS = -ID [Cont.], di  
Reverse Recovery Charge  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
Peak Recovery Current  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
/dt = 100A/µs)  
1.5  
5.5  
13  
Qrr  
/
IRRM  
Amps  
/
23  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
TYP  
MAX  
0.31  
40  
UNIT  
RqJC  
RqJA  
Junction to Case  
°C/W  
JunctiontoAmbient  
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
SeeMIL-STD-750Method3471  
Starting T = +25°C, L = 3.09mH, R = 25W, Peak I = 29A  
j
G
L
dv  
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%  
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
device itself.  
I
£ -I  
/
£ 700A/µs  
V
R £ V  
T £ 150°C  
J
dt  
S
D Cont.  
[
DSS  
]
APT Reserves the right to change, without notice, the specifications and information contained herein.  
D3PAKPackageOutline  
TO-247 Package Outline  
4.98 (.196)  
5.08 (.200)  
1.47 (.058)  
1.57 (.062)  
4.69 (.185)  
5.31 (.209)  
15.95 (.628)  
16.05 (.632)  
13.41 (.528)  
13.51 (.532)  
15.49 (.610)  
16.26 (.640)  
1.04 (.041)  
1.15 (.045)  
1.49 (.059)  
2.49 (.098)  
5.38 (.212)  
6.20 (.244)  
6.15 (.242) BSC  
Revised  
8/29/97  
11.51 (.453)  
11.61 (.457)  
13.79 (.543)  
13.99 (.551)  
20.80 (.819)  
21.46 (.845)  
3.50 (.138)  
3.81 (.150)  
0.46 (.018)  
0.56 (.022)  
{3 Plcs}  
1.27 (.050)  
1.40 (.055)  
0.020 (.001)  
0.178 (.007)  
2.87 (.113)  
3.12 (.123)  
3.81 (.150)  
4.50 (.177) Max.  
1.98 (.078)  
2.08 (.082)  
4.06 (.160)  
2.67 (.105)  
2.84 (.112)  
(Base of Lead)  
1.65 (.065)  
2.13 (.084)  
1.22 (.048)  
1.32 (.052)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
Heat Sink (Drain)  
and Leads  
are Plated  
5.45 (.215) BSC  
{2 Plcs.}  
1.01 (.040)  
1.40 (.055)  
Gate  
Drain  
Source  
Source  
Drain  
Gate  
Dimensions in Millimeters (Inches)  
2.21 (.087)  
2.59 (.102)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
APT'sdevicesarecoveredbyoneormoreofthefollowingU.S.patents:  
4,895,810  
5,256,583  
5,045,903  
4,748,103  
5,089,434  
5,283,202  
5,182,234  
5,231,474  
5,019,522  
5,434,095  
5,262,336  
5,528,058  

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