2N7370 [MICROSEMI]
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR; NPN达林顿大功率硅晶体管
| 型号： | 2N7370 |
| 厂家： | 
Microsemi |
| 描述： | NPN DARLINGTON HIGH POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN DARLINGTON HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 624
Devices
Qualified Level
JAN
2N7370
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Symbol
VCEO
VCBO
VEBO
IB
Value
100
100
5.0
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0.2
12
Collector Current
Total Power Dissipation @ TC = +250C (1)
IC
100
PT
Operating & Storage Junction Temperature Range
-65 to +175
0C
TJ, T
stg
THERMAL CHARACTERISTICS
Characteristics
TO-254*
Symbol
Max.
Unit
0C/W
Thermal Resistance, Junction-to-Case
1) Derate linearly 0.667 W/0C above TC > +250C
1.5
R
qJC
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
100
Vdc
VCEO sus
(
)
Collector-Emitter Cutoff Current
VCE = 50 Vdc
Collector-Emitter Cutoff Current
VCE = 100 Vdc, VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
1.0
0.5
2.0
mAdc
mAdc
mAdc
ICEO
ICEX
IEBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N7370 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 6.0 Adc, VCE = 3.0 Vdc
1,000
150
18,000
hFE
IC = 12 Adc, VCE = 3.0 Vdc
Collector-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
Base-Emitter Saturation Voltage
IC = 12 Adc, IB = 120 mAdc
3.0
4.0
Vdc
Vdc
VCE(sat)
VBE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
10
250
IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz
½hfe½
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 12 Adc; IB1 = 120 mAdc
Turn-Off Time
ton
2.0
10
ms
ms
VCC = 30 Vdc; IC = 12 Adc; IB1 = IB2 = 120 mAdc
toff
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ³ 1.0 s
Test 1
VCE = 8.3 Vdc, IC = 12 Adc
Test 2
VCE = 30 Vdc, IC = 3.3 Adc
Test 3
VCE = 90 Vdc, IC = 150 mAdc
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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