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2N7372_1 [MICROSEMI]

PNP POWER SILICON SWITCHING TRANSISTOR; PNP功率硅开关晶体管
2N7372_1
型号： 2N7372_1
厂家： Microsemi    Microsemi
描述：

PNP POWER SILICON SWITCHING TRANSISTOR
PNP功率硅开关晶体管

晶体 开关 晶体管
文件： 总2页 (文件大小：98K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/612  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
JANS  
2N7372  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Collector-Emitter Voltage  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
100  
5.5  
5.0  
Total Power Dissipation  
@ TA = +25°C (1)  
@ TC = +25°C (2)  
4.0  
58  
PT  
W
TO-254AA  
Operating & Storage Junction Temperature Range  
Thermal Resistance, Junction-to Case  
Tj , Tstg  
RθJC  
-65 to +200  
3
°C  
PIN 1 = BASE  
PIN 2 = COLLECTOR  
PIN 3 = EMITTER  
°C/W  
1) Derate linearly 22.8mW/°C for TA > 25°C  
2) Derate linearly 331mW/°C for TC > 25°C  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
OFF CHARACTERISTICS  
Symbol  
Min.  
Max.  
Unit  
Collector-Emitter Breakdown Voltage  
IC = 100mAdc  
V(BR)CEO  
80  
Vdc  
Collector-Emitter Cutoff Current  
VCE = 60Vdc, VBE = 0Vdc  
ICES1  
ICES2  
1.0  
1.0  
µAdc  
mAdc  
VCE = 100Vdc, VBE = 0Vdc  
Collector-Emitter Cutoff Current  
CE = 40Vdc, IB = 0  
ICEO  
50  
µAdc  
V
Emitter-Base Cutoff Current  
EB = 4.0Vdc  
VEB = 5.5Vdc  
IEBO1  
IEBO2  
1.0  
1.0  
µAdc  
mAdc  
V
T4-LDS-0045 Rev. 1 (072805)  
Page 1 of 2  
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
PNP POWER SILICON SWITCHING TRANSISTOR  
Qualified per MIL-PRF-19500/612  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)  
Parameters / Test Conditions  
ON CHARACTERISTICS (3)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 0.05Adc, VCE = 5.0Vdc  
IC = 2.5Adc, VCE = 5.0Vdc  
IC = 5.0Adc, VCE = 5.0Vdc  
hFE1  
hFE2  
hFE3  
50  
70  
40  
---  
200  
---  
Base-Emitter Non-Saturated Voltage  
VCE = 5.0Vdc, IC = 2.5Adc  
VBE  
1.45  
Vdc  
Vdc  
Base-Emitter Saturation Voltage  
IC = 2.5Adc, IB = 0.25Adc  
IC = 5.0Adc, IB = 0.5Adc  
VBE(sat)1  
VBE(sat)2  
1.45  
2.2  
Collector-Emitter Saturation Voltage  
IC = 2.5Adc, IB = 0.25Adc  
IC = 5.0Adc, IB = 0.5Adc  
VCE(sat)1  
VCE(sat)2  
0.75  
1.5  
Vdc  
DYNAMIC CHARACTERISTICS  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
Common Emitter Small Signal, Short Circuit Forward Current Transfer Ratio  
hfe  
50  
VCE = 5Vdc, IC = 100mAdc, f = 1kHz  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
|hfe|  
7.0  
IC = 0.5Adc, VCE = 5Vdc, f = 10MHz  
Output Capacitance  
Cobo  
250  
pF  
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz  
SAFE OPERATING AREA  
DC Tests  
TC = +25°C, 1 Cycle, t = 1s  
Test 1  
VCE = 12Vdc, IC = 5.0Adc  
Test 2  
VCE = 32Vdc, IC = 1.5Adc  
Test 3  
VCE = 80Vdc, IC = 100mAdc  
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%  
T4-LDS-0045 Rev. 1 (072805)  
Page 2 of 2  

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