2N5010S [MICROSEMI]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | 2N5010S |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
DEVICES
LEVELS
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013S
2N5014S
2N5015S
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
500
600
700
800
900
1000
500
600
700
800
900
1000
5
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
Collector-Emitter Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
VCER
TO-5
2N5010 thru 2N5015
Collector-Base Voltage
VCBO
Emitter-Base Voltage
Collector Current
Base Current
VEBO
IC
200
20
IB
Total Power Dissipation
@ TA = +25°C
@ TC = +25° C
Pt
1.0
7.0
W
TO-39
2N5010S thru 2N5015S
Thermal Resistance, Junction to Case
1/
20
°C/W
°C
RθJC
Operating & Storage Junction Temperature Range
Tj, Tstg
-65 to +200
Note:
1/ See 19500/727 for Thermal Derating Curves.
T4-LDS-0067 Rev. 1 (082021)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Collector to Base Cutoff Current
Symbol
Min.
Max.
Unit
VCB = 400V
VCB = 500V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
10
10
10
10
10
10
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
V
CB = 580V
VCB = 650V
CB = 700V
ICBO1
V
VCB = 760V
@ TA = +150°C
VCB = 400V
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
10
10
10
10
10
10
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
V
CB = 500V
VCB = 588V
CB = 650V
VCB = 700V
CB = 760V
ICBO2
V
V
Emitter to Base Cutoff Current
VEB = 4V
20
uAdc
IEBO
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.2mAdc
IC = 0.2mAdc
IC = 0.2mAdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
V(BR)CBO
V(BR)EBO
V(BR)CER
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA
5
Vdc
Collector to Emitter Breakdown Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
RBE = 1KΩ
IC = 0.2mA, Pulsed
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
30
30
180
180
hFE1
VCE = 10V
VCE = 10V
IC = 5mA
hFE2
10
10
VCE = 10V
IC = 20mA
@ TA = -55°C
hFE3
T4-LDS-0067 Rev. 1 (082021)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
Symbol
Min.
Max.
Unit
IC = 25mA
IC = 20mA
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
1.0
1.0
Vdc
Vdc
VBE(SAT)
IB = 5mA, Pulsed
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 25mA
IC = 25mA
IC = 20mA
IC = 20mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
1.4
1.5
1.6
1.6
1.6
1.8
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
VCE(SAT)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of small signal short-circuit forward current transfer ratio
VCE = 10Vdc, IC = 25mA, f = 10MHz
CE = 10Vdc, IC = 20mA, f = 10MHz
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
1.0
1.0
|hfe|
V
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz
30
Cobo
pF
T4-LDS-0067 Rev. 1 (082021)
Page 3 of 3
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