2N5010_1 [MICROSEMI]
NPN SILICON TRANSISTOR; NPN硅晶体管
| 型号： | 2N5010_1 |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/727
DEVICES
LEVELS
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010S
2N5011S
2N5012S
2N5013S
2N5014S
2N5015S
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
500
600
700
800
900
1000
500
600
700
800
900
1000
5
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
mAdc
mAdc
Collector-Emitter Voltage
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
VCER
TO-5
2N5010 thru 2N5015
Collector-Base Voltage
VCBO
Emitter-Base Voltage
Collector Current
Base Current
VEBO
IC
200
20
IB
Total Power Dissipation
TO-39
2N5010S thru 2N5015S
@ TA = +25°C
@ TC = +25° C
Pt
1.0
7.0
W
Thermal Resistance, Junction to Case 1/
20
°C/W
°C
RθJC
Operating & Storage Junction Temperature Range
Tj, Tstg
-65 to +200
Note:
1/ See 19500/727 for Thermal Derating Curves.
T4-LDS-0067 Rev. 2 (100293)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Collector to Base Cutoff Current
VCB = 400V
CB = 500V
VCB = 580V
VCB = 650V
Symbol
Min.
Max.
Unit
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
10
10
10
10
10
10
nAdc
nAdc
nAdc
nAdc
nAdc
nAdc
V
ICBO1
V
CB = 700V
VCB = 760V
@ TA = +150°C
2N5010
2N5011
2N5012
2N5013
VCB = 400V
VCB = 500V
10
10
10
10
10
10
uAdc
uAdc
uAdc
uAdc
uAdc
uAdc
V
CB = 588V
ICBO2
VCB = 650V
VCB = 700V
2N5014
2N5015
V
CB = 760V
Emitter to Base Cutoff Current
VEB = 4V
20
uAdc
IEBO
Collector to Base Breakdown Voltage
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.1mAdc
IC = 0.2mAdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
V(BR)CBO
V(BR)EBO
V(BR)CER
IC = 0.2mAdc
IC = 0.2mAdc
Emitter to Base Breakdown Voltage
IC = 0mA
IE = 0.05mA
Collector to Emitter Breakdown Voltage
RBE = 1KΩ
IC = 0.2mA, Pulsed
5
Vdc
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
500
600
700
800
900
1000
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Forward-Current Transfer Ratio
IC = 25mA
IC = 20mA
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
30
30
180
180
hFE1
VCE = 10V
VCE = 10V
IC = 5mA
hFE2
hFE3
10
10
VCE = 10V
IC = 20mA
@ TA = -55°C
T4-LDS-0067 Rev. 2 (100293)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
Base-Emitter Saturation Voltage
Symbol
Min.
Max.
Unit
IC = 25mA
IC = 20mA
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
1.0
1.0
Vdc
Vdc
VBE(SAT)
IB = 5mA, Pulsed
Collector-Emitter Saturation Voltage
IC = 25mA
IC = 25mA
IC = 25mA
IC = 20mA
IC = 20mA
IC = 20mA
IB = 5mA, Pulsed
2N5010
2N5011
2N5012
2N5013
2N5014
2N5015
1.4
1.5
1.6
1.6
1.6
1.8
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
VCE(SAT)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of small signal short-circuit forward current transfer ratio
|hfe|
VCE = 10Vdc, IC = 25mA, f = 10MHz
VCE = 10Vdc, IC = 20mA, f = 10MHz
2N5010, 2N5011, 2N5012
2N5013, 2N5014, 2N5015
1.0
1.0
Open circuit output capacitance
VCB = 10V, IE = 0, f = 2MHz
Cobo
pF
30
T4-LDS-0067 Rev. 2 (100293)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
PACKAGE DIMENSIONS
Dimensions
Millimeters
Symbol
Inches
Min
.305
.240
.335
Notes
6
Max
.335
.260
.370
Min
7.75
6.10
8.51
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
P
Q
.200 TP
5.08 TP
7
8,9
.016
.016
.019
0.41
See note 14
0.41
0.48
.019
.050
0.48
1.27
8,9
8,9
8,9
7
5
3,4
3
.250
.100
6.35
2.54
.030
.045
.034
.010
0.76
1.14
0.86
0.25
TL
TW
r
.029
.028
0.74
0.71
10
7
α
45° TP
45° TP
1, 2, 10, 12, 13, 14
NOTE:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm)
radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured
by direct methods or by gauging procedure.
8. Dimension LU applies between L and L . Dimension LD applies between L and LL minimum. Diameter is uncontrolled
1
2
2
in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. For non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-
suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max.
T4-LDS-0067 Rev. 2 (100293)
Page 4 of 4
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