2N4449U [MICROSEMI]
NPN SILICON SWITCHING TRANSISTOR; 硅NPN开关晶体管
| 型号： | 2N4449U |
| 厂家： | 
Microsemi |
| 描述： | NPN SILICON SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/ 317
Devices
Qualified Level
2N2369A
2N4449
JAN
JANTX
JANTXV
2N2369AU
2N2369AUA
2N2369AUB
2N4449U
2N4449UA
2N4449UB
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Symbol
VCEO
VEBO
VCBO
VCES
All UB
20
All others
Unit
Vdc
15
Emitter-Base Voltage
6.0
4.5
Vdc
Vdc
Vdc
Collector-Base Voltage
Collector-Emitter Voltage
40
40
TO-18* (TO-206AA)
2N2369A
@ TA = +250C @ TC = +250C
Total Power Dissipation
2N2369A; 2N4449
All UA
0.50(1)
0.50(5)
0.40(6)
0.60(3)
1.2(2)
1.2(2)
1.4(7)
1.5(4)
W
W
PT
All UB
All U
0C
TO-46 (TO-206AB)
2N4449
Operating & Storage Junction Temperature Range
-65 to +200
Top, T
stg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Case
2N2369A; 2N4449
All UA
All UB
146
125
135
117
0C/mW
SURFACE MOUNT
UA*
R
qJC
All U
Thermal Resistance, Ambient-to-Case
2N2369A; 2N4449
325
350
437
291
0C/mW
SURFACE MOUNT
UB*
All UA
All UB
All U
R
qJA
1) Derate linearly 3.08 mW/0C above TA = +37.50C
2) Derate linearly 6.85 mW/0C above TC = +250C
3) Derate linearly 3.44 mW/0C above TA = +63.50C
4) Derate linearly 8.55 mW/0C above TC = +63.50C
5) Derate linearly 2.86 mW/0C above TC = +63.50C
6) Derate linearly 2.29 mW/0C above TC = +63.50C
7) Derate linearly 8.00 mW/0C above TC = +63.50C
SURFACE MOUNT
U*
*See appendix A for
package outline
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N2369A; UA; UB; U; 2N4449; UA; UB; U JAN SERIES
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
15
Vdc
V(BR)
CEO
Collector-Emitter Cutoff Current
VCE = 20 Vdc
0.4
ICES
mAdc
Emitter-Base Breakdown Voltage
VEB = 4.5 Vdc
Emitter-Base Cutoff Current
VEB = 4.0 Vdc
Collector-Base Breakdown Voltage
VCB = 40 Vdc
Collector-Base Cutoff Current
VCB = 32 Vdc
10
mAdc
mAdc
IEBO
0.25
10
ICBO
0.2
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 10 mAdc, VCE = 0.35 Vdc
IC = 30 mAdc, VCE = 0.4 Vdc
IC = 10 mAdc, VCE = 1.0 Vdc
IC = 100 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc
IC = 100 mAdc, IB = 10 mAdc
40
30
40
20
120
120
120
120
hFE
0.20
0.25
0.45
Vdc
Vdc
VCE(sat)
0.70
0.80
0.85
0.90
1.20
VBE(sat)
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz
Output Capacitance
VCB = 5.0 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
(1)Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
SWITCHING CHARACTERISTICS
Turn-On Time
½hfe½
Cobo
5.0
10
4.0
pF
pF
5.0
Cibo
ton
toff
ts
hs
hs
hs
12
18
13
IC = 10 mAdc; IB1= 3.0 mAdc, IB2 = 1.5 mAdc
Turn-Off Time
IC = 10 mAdc; IB1 = 3.0 mAdc, IB2 = 1.5 mAdc
Charge Storage Time
IC = 10 mAdc; IB1 = 10 mAdc, IB2 = 10 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
2N4449UAE3
Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-4
MICROSEMI
2N4449UE3
Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, SURFACE MOUNT PACKAGE-6
MICROSEMI
©2020 ICPDF网 联系我们和版权申明