2N4449_02 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N4449_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：315K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4449
Data Sheet
Description
Applications
• High-speed switching transistor
• Low power
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4449J)
• JANTX level (2N4449JX)
• JANTXV level (2N4449JV)
• JANS level (2N4449JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-46 metal can
• Also available in chip configuration
• Chip geometry 0005
• Reference document:
MIL-PRF-19500/317
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Symbol
VCEO
VCBO
Rating
15
Unit
Volts
Volts
40
Volts
Emitter-Base Voltage
Power Dissipation, TA = 25°C
Derate linearly above 25°C
VEBO
PT
4.5
mW
mW/°C
°C/W
0.36
2.06
Thermal Resistance
325
RθJA
TJ
°C
°C
Operating Junction Temperature
Storage Temperature
-65 to +200
-65 to +200
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N4449
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Symbol
V(BR)CEO IC = 10 mA
Test Conditions
Min
15
Typ
Max
Units
Volts
VCB = 40 Volts
ICBO1
ICBO2
ICBO3
10
0.2
30
µA
VCB = 32 Volts
Collector-Base Cutoff Current
VCB = 20 Volts, TA = 150°C
VCE= 10Volts, VEB= 0.25Volts
TA = 125°C
µA
nA
µA
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
ICEX
ICES
IEBO1
30
VCE = 20 Volts
400
VEB = 4.5 Volts
10
IEBO2
VEB = 4 Volts
0.25
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 10 mA, VCE = 0.35 Volts
IC = 30 mA, VCE = 0.4 Volts
IC = 10 mA, VCE = 1 Volts
IC = 100 mA, VCE = 1 Volts
IC = 10 mA, VCE = 1 Volts
TA = -55°C
hFE1
hFE2
hFE3
hFE4
hFE5
40
30
40
20
20
120
120
120
120
DC Current Gain
VBEsat1
VBEsat2
VBEsat3
VBEsat4
VBEsat5
VCEsat1
VCEsat2
VCEsat3
VCEsat4
IC = 10 mA, IB = 1 mA
0.70
0.85
0.90
1.20
IC = 30 mA, IB = 3 mA
Volts
Volts
Base-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
I = 10mA, I = 1mA,TA=+125°C
IC= 10mA, IB= 1mA, TA = -55°C
ICC = 10 mA,BIB = 1 mA
0.80
0.59
1.02
0.20
0.25
0.45
0.30
IC = 30 mA, IB = 3 mA
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
IC= 10mA, IB= 1mA,TA=+125°C
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
VCE = 10 Volts, IC = 10 mA,
|hFE|
5
10
f = 100 MHz
CB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
V
pF
Open Circuit Output Capacitance
COBO
4
V
EB = 0.5 Volts, IC = 0 mA,
pF
ns
ns
Open Circuit Input Capacitance
Storage Time
CIBO
ts
5
100 kHZ < f < 1 MHz
IC = 10 mA, IB1=IB2 = 10 mA
IC = 10 mA, IB1= 3 mA,
13
12
Saturated Turn-On Time
tON
I
B2 = 1.5 mA
IC = 10 mA, IB1= 3 mA,
IB2 = 1.5 mA
ns
Saturated Turn-Off Time
tOFF
18
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. J
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
相关型号：
©2020 ICPDF网 联系我们和版权申明