2N3420 [MICROSEMI]
3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS; 3安培， 85V ， NPN硅功率晶体管JAN ， JTX ， JTXV ， JANS
| 型号： | 2N3420 |
| 厂家： | 
Microsemi |
| 描述： | 3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7516 Central Industrial Drive
Riviera Beach, Florida
33404
PHONE: (561) 842-0305
FAX: (561) 845-7813
2N3420
APPLICATIONS:
·
·
·
Power Supply
Pulse Amplifier
High Frequency Power Switching
3 Amp, 85V,
NPN Silicon Power
Transistors
FEATURES:
·
·
·
·
·
Meets MIL-S-19500/393
Collector-Base Voltage: up to 85
Peak Collector Current: 5A
High Power Dissipation in TO-5: 15W @ TC = 100°C
JAN, JTX, JTXV, JANS
Fast Switching
DESCRIPTION:
These power transistors are produced by PPC's DOUBLE
DIFFUSED PLANAR process. This technology produces high
voltage devices with excellent switching speeds, frequency
response, gain linearity, saturation voltages, high current gain,
and safe operating areas. They are intended for use in
Commercial, Industrial, and Military power switching, amplifier,
and regulator applications.
Ultrasonically bonded leads and controlled die mount
techniques are utilized to further increase the SOA capability
and inherent reliability of these devices. The temperature
range to 200°C permits reliable operation in high ambients, and
the hermetically sealed package insures maximum reliability
and long life.
TO-5
ABSOLUTE MAXIMUM RATINGS:
SYMBOL
CHARACTERISTIC
VALUE
UNITS
Volts
Volts
Volts
Amps
Amps
°C
VCBO
VCEO
VEBO
IC*
*
*
*
Collector-Base Voltage
85
Collector-Emitter Voltage
Emitter-Base Voltage
D.C. Collector Current
Peak Collector Current
Storage Temperature
Operating Junction Temperature
Power Dissipation
60
8
3
IC*
5
TSTG
*
-65 to 200
-65 to 200
TJ*
PT*
°C
1.0
15
Watts
Watts
TC = 25°C Ambient
TC = 100°C Case
* Indicates MIL-S-19500/393
MSC0982A.DOC 12-02-98
2N3420
ELECTRICAL CHARACTERISTICS:
(25°Case Temperature Unless Otherwise Noted)
VALUE
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
Units
Vdc
Min.
60
Max.
----
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Cutoff Current
IC = 50 mAdc, Cond. D (Note 1)
BVCEO*
----
----
0.3
50
ICEX
ICEO*
IEBO
*
VEB = 0.5 Vdc, Cond. A, VCE = 80 Vdc
VEB = 0.5 Vdc, Cond. A, TA = 150°C, VCE = 80 Vdc
mAdc
mAdc
mAdc
Collector-Emitter
Cutoff Current
Emitter-Base
----
5.0
VCE = 45 Vdc, Cond. D
*
VEB = 6 Vdc, Cond. D
mAdc
mAdc
----
----
----
0.5
10
Cutoff Current
VEB = 8 Vdc, Cond. D
40
----
hFE*
D.C. Current Gain
(Note 1)
IC = 100 mAdc, VCE = 2 Vdc
IC = 1 Adc, VCE = 2 Vdc
IC = 2 Adc, VCE = 2 Vdc
IC = 5 Adc, VCE = 5 Vdc
IC = 1 Adc, VCE = 2 Vdc, TA = - 55°C
40
120
----
30
15
10
----
----
----
----
----
----
----
----
0.25
0.5
Vdc
Vdc
VCE(sat)
*
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
Collector-Emitter
Saturation Voltage
(Note 1)
0.6
0.7
1.2
1.4
Vdc
Vdc
VBE(sat)*
IS/b*
IC = 1 Adc, IB = 0.1 Adc
IC = 2 Adc, IB = 0.2 Adc
Base-Emitter Saturation
Voltage (Note 1)
Forward Biased Second
Breakdown
3
----
----
----
Adc
Adc
mAdc
VCE = 5 Vdc, TC = 100°C
VCE = 37 Vdc, TC = 100°C
VCE = 60 Vdc, TC = 100°C
0.4
185
Unclamped Reverse
Biased Second
Breakdown
Clamped Reverse Biased
Second Breakdown
45
----
mj
mj
IC = 3 Adc, L = 10 mH, Base Open
ES/b*
180
----
IC = 3 Adc, L = 40 mH, VClamp = 125V
ES/b*
fT*
Gain Bandwidth Product
Output Capacitance
26
160
150
MHz
pf
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
VCB = 10 Vdc, IE = 0, f = 1 MHz
COb
*
----
Turn-on Time
Turn-off Time
----
----
0.3
1.2
ton
toff
IC = 1 Adc, IB1 = - IB2 = 0.1 Adc
IC = 1 Adc, IB1 = - IB2 = 0.1 Adc
ms
ms
Note 1: Pulse Test: Pulse width = 300mSec., duty cycle £ 2%.
* Indicates MIL-S-19500/393
MSC0982A.DOC 12-02-98
2N3420
PACKAGE MECHANICAL DATA:
1.500 [38.10] MIN
.031 [.79]
45°
.240 [6.35]
.260 [6.60]
.029 [.74]
.045 [1.14]
.010 [.25]
.030 [.76]
.200 [5.08]
Ø.305 [7.75]
Ø.335 [8.51]
.100 [2.54]
.100 [2.54]
[+.051]
-.001 [.432]
[.025]
Ø.017 +.002
Ø.335 [8.51]
Ø.370 [9.40]
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
MSC0982A.DOC 12-02-98
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