2N3420JANTX [MICROSEMI]
NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393; 每NPN MEDUIM功率硅晶体管合格MIL -PRF-三百九十三分之一万九千五百
| 型号： | 2N3420JANTX |
| 厂家： | 
Microsemi |
| 描述： | NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 393
Devices
Qualified Level
JAN
JANTX
JANTXV
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
MAXIMUM RATINGS
2N3418, S 2N3419, S
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol 2N3420, S 2N3421, S Unit
60
80
Vdc
Vdc
Vdc
VCEO
VCBO
VEBO
85
125
TO- 5*
8.0
2N3418, 2N3419,
2N3420, 2N3421
Collector Current
3.0
5.0
1.0
15
Adc
IC
tP £ 1.0 ms, duty cycle £ 50%
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2)
W
PT
W/0C
Operating & Storage Temperature Range
-65 to +200
0C
Top, T
stg
1) Derate linearly 5.72 mW/0C for TA > 250C
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
2) Derate linearly 150 mW/0C for TC > 1000C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 50 mAdc, IB = 0
Vdc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
V(BR)
60
80
CEO
Collector-Emitter Cutoff Current
VBE = -0.5 Vdc, VCE = 80 Vdc
VBE = -0.5 Vdc, VCE = 120 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc, IB = 0
VCE = 60 Vdc, IB = 0
Emitter-Base Cutoff Current
VEB = 6.0 Vdc, IC = 0
mAdc
ICEX
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
0.3
0.3
mAdc
mAdc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
ICEO
5.0
5.0
IEBO
0.5
10
VEB = 8.0 Vdc, IC = 0
6 Lake Street, Lawrence, MA 01841
120101
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Page 1 of 2
2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
ON CHARACTERISTICS
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
20
40
20
40
15
30
10
15
IC = 100 mAdc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
60
120
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 2.0 Adc, VCE = 2.0 Vdc
IC = 5.0 Adc, VCE = 5.0 Vdc
hFE
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
0.6
0.7
1.2
1.4
Vdc
Vdc
VBE(sat)
0.25
0.5
VCE(sat)
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
½hfe½
1.3
8.0
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
pF
Cobo
150
SWITCHING CHARACTERISTICS
VBE(off) = -3.7 Vdc
td
tr
ts
tf
Delay Time
0.08
0.22
1.10
0.20
ms
ms
ms
ms
Rise Time
IC = 1.0 Adc, IB1 = 100 mAdc
Storage Time
VBE(off) = -3.7 Vdc
Fall Time
IC = 1.0 Adc, IB2 = -100 mAdc
SAFE OPERATING AREA
DC Tests
TC = 1000C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 3.0 Adc
Test 2
VCE = 37 Vdc, IC = 0.4 Adc
TEST 3
VCE = 60 Vdc, IC = 0.185 Adc
VCE = 80 Vdc, IC = 0.12 Adc
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
Clamped Switching
TA = 250C, IB = 0.5 Adc, IC = 3.0 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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