2N3057A [MICROSEMI]
LOW POWER NPN SILICON TRANSISTOR; 低功率NPN硅晶体管
| 型号： | 2N3057A |
| 厂家： | 
Microsemi |
| 描述： | LOW POWER NPN SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
LOW POWER NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 391
Devices
2N3019
Qualified Level
JAN
2N3057A
2N3700
2N3019S
2N3700S
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
Value
80
Units
Vdc
VCEO
VCBO
VEBO
IC
140
7.0
Vdc
TO-39* (TO-205AD)
2N3019, 2N3019S
Vdc
1.0
Adc
Total Power Dissipation
@ TA = +250C(1)
W
2N3019; 2N3019S
2N3057A
2N3700
0.8
0.4
0.5
0.4
TO- 18* (TO-206AA)
2N3700
2N3700UB
PT
@ TC = +250C(2)
W
2N3019; 2N3019S
2N3057A
5.0
1.8
2N3700
2N3700UB
Operating & Storage Jct Temp Range
1.8
1.16
-55 to +175
TO-46* (TO-206AB)
2N3057A
0C
TJ, T
stg
1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA ³ +250C.
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
3 PIN SURFACE MOUNT*
2N3700UB
10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC ³ +250C.
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 mAdc
Emitter-Base Breakdown Voltage
IE = 100 mAdc
Collector-Emitter Breakdown Current
IC = 30 mAdc
140
7.0
80
Vdc
Vdc
Vdc
V(BR)
CBO
V(BR)
EBO
V(BR)
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS (con’t)
Collector-Emitter Cutoff Current
VCE = 90 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
10
10
ICES
IEBO
hAdc
hAdc
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 500 mAdc, VCE = 10 Vdc
IC = 1.0 Adc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
100
50
90
50
15
300
200
hFE
200
0.2
0.5
Vdc
Vdc
VCE(sat)
1.1
VBE(sat)
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
80
400
hfe
½hfe½
5.0
20
12
Cobo
Cibo
p¦
60
pF
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SAFE OPERATING AREA
DC Tests
TC = 250C, 1 Cycle, t = 10 ms
Test 1
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 10 Vdc
IC = 500 mAdc
IC = 180 mAdc
Test 2
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 40 Vdc
IC = 125 mAdc
IC = 45 mAdc
Test 3
2N3019, 2N3019S
2N3057A, 2N3700, 2N3700UB
VCE = 80 Vdc
IC = 60 mAdc
IC = 22.5 mAdc
(1) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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