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2N3029 [MICROSEMI]

SCRs 0.5 Amp, Planear; 可控硅0.5安培，平面变
2N3029
元器件型号： 2N3029
生产厂家： MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述和应用：

SCRs 0.5 Amp, Planear
可控硅0.5安培，平面变

触发装置 可控硅整流器
PDF文件： 总6页 (文件大小：296K)
下载文档：  下载PDF数据表文档文件
型号参数：2N3029参数
 查看货源

2N3029B

 Thyristor SCR 100V 8A 3-Pin TO-18

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0 NJSEMI

2N303

 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 200MA I(C) | TO-22VAR

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22 ETC

2N3030

 SCRs 0.5 Amp, Planear

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16 MICROSEMI

2N3030

 Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3030

 Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3030E3

 Silicon Controlled Rectifier, 0.785A I(T)RMS, 30V V(DRM), 30V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3031

 SCRs 0.5 Amp, Planear

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18 MICROSEMI

2N3031

 Silicon Controlled Rectifier, 1.3A I(T)RMS, 500mA I(T), 60V V(DRM), 60V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3032

 SCRs 0.5 Amp, Planear

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20 MICROSEMI

2N3032

 SCRs 0.5 Amp, Planar

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13 ETC

2N3032

 SCRs 0.5 Amp, Planar

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7 ETC

2N3032

 Silicon Controlled Rectifier, 1A I(T)RMS, 500mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3032

 Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3032E3

 Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3033

 N-P-N EPITAXIAL MESA SILICON TRANSISTORS

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17 NJSEMI
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