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2N3031 [MICROSEMI]

SCRs 0.5 Amp, Planear; 可控硅0.5安培，平面变

2N3031


元器件型号：	2N3031
生产厂家：	MICROSEMI CORPORATION
描述和应用：	SCRs 0.5 Amp, Planear 可控硅0.5安培，平面变可控硅
PDF文件：	总6页 (文件大小：296K)
下载文档：	下载PDF数据表文档文件
型号参数：2N3031参数

2N3032

SCRs 0.5 Amp, Planear

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20 MICROSEMI

2N3032

SCRs 0.5 Amp, Planar

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13 ETC

2N3032

SCRs 0.5 Amp, Planar

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7 ETC

2N3032

Silicon Controlled Rectifier, 1A I(T)RMS, 500mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 SSDI

2N3032

Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3032E3

Silicon Controlled Rectifier, 0.785A I(T)RMS, 100V V(DRM), 100V V(RRM), 1 Element, TO-18

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0 MICROSEMI

2N3033

N-P-N EPITAXIAL MESA SILICON TRANSISTORS

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17 NJSEMI

2N3034

N-P-N EPITAXIAL MESA SILICON TRANSISTORS

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10 NJSEMI

2N3035

N-P-N EPITAXIAL MESA SILICON TRANSISTORS

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22 NJSEMI

2N3036

Bipolar NPN Device in a Hermetically sealed TO39

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18 SEME-LAB

2N3036

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1.2A I(C) | TO-5

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22 ETC

2N3036

1200mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 3 PIN

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0 ONSEMI

2N3036

Small Signal Bipolar Transistor

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0 NJSEMI

2N3036

Small Signal Bipolar Transistor, 1.2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39

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0 CENTRAL

2N3036L

TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1.2A I(C) | TO-5

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54 ETC

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