2N2325S [MICROSEMI]

Thyristor Switches ; 晶闸管开关\n
2N2325S
型号: 2N2325S
厂家: MICROSEMI CORPORATION    MICROSEMI CORPORATION
描述:

Thyristor Switches
晶闸管开关\n

开关
文件: 总3页 (文件大小:164K)
下载:  下载PDF数据表文档文件

2N2326

SCRs 1.6 Amp, Planear

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28 MICROSEMI

2N2326

Bipolar NPNP Device in a Hermetically sealed TO39

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26 SEME-LAB

2N2326

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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26 CENTRAL

2N2326

SCR, V(DRM) = 200 V TO 299.9 V

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7 NJSEMI

2N2326

SILICON THYRISTORS

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15 COMSET

2N2326

SILICON CONTROLLED RECTIFIER

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1 MICROSEMI

2N2326

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 1 Element, TO-39, TO-39, 3 PIN

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0 ASI

2N2326

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2326

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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1 DIGITRON

2N2326

Silicon Controlled Rectifier, 1600mA I(T), 200V V(DRM),

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1 RAYTHEON

2N2326A

SILICON CONTROLLED RECTIFIER

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26 MICROSEMI

2N2326AS

SILICON CONTROLLED RECTIFIER

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18 MICROSEMI

2N2326S

SILICON CONTROLLED RECTIFIER

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17 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI