2N2326 [NJSEMI]

SCR, V(DRM) = 200 V TO 299.9 V; SCR ,V ( DRM ) = 200 V至299.9 V
2N2326
型号: 2N2326
厂家: NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.    NEW JERSEY SEMI-CONDUCTOR PRODUCTS, INC.
描述:

SCR, V(DRM) = 200 V TO 299.9 V
SCR ,V ( DRM ) = 200 V至299.9 V

栅极 触发装置 可控硅整流器
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2N2326A

SILICON CONTROLLED RECTIFIER

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26 MICROSEMI

2N2326AS

SILICON CONTROLLED RECTIFIER

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18 MICROSEMI

2N2326S

SILICON CONTROLLED RECTIFIER

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17 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI

2N2326SE3

Silicon Controlled Rectifier, 0.3454A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 Element, TO-5, TO-5, 3 PIN

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0 MICROSEMI

2N2327

SCRs 1.6 Amp, Planear

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10 MICROSEMI

2N2327

SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS

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11 CENTRAL

2N2327

SILICON THYRISTORS

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11 COMSET

2N2327

Silicon Controlled Rectifier, 1.6A I(T)RMS, 1600mA I(T), 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL

2N2327

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 250; Max TMS Bridge Input Voltage: 1; Max DC Reverse Voltage: 0.1; Capacitance: 0.15; Package: TO-39

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0 DIGITRON

2N2327A

SCRs 1.6 Amp, Planear

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15 MICROSEMI

2N2327AE3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327AS

Thyristor Switches

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5 MICROSEMI

2N2327E3

Silicon Controlled Rectifier, 2.512A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, TO-39, 3 PIN

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0 MICROSEMI

2N2327LEADFREE

Silicon Controlled Rectifier, 1.6A I(T)RMS, 250V V(DRM), 250V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3

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0 CENTRAL