1N6677UR-1 [MICROSEMI]
0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS; 0.2与0.5安培肖特基二极管
| 型号： | 1N6677UR-1 |
| 厂家： | 
Microsemi |
| 描述： | 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
• 1N6677UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/610
1N6677UR-1
and
• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
CDLL6675 thru CDLL6677
and
CDLL0.2A20 thru 40
and
•LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED
CDLL0.5A20 thru 40
• DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS, 0.2 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.2 AMP @ T
Derating: 8.0 mA / °C above +100°C
= +100°C
EC
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
CAPACITANCE @
MAXIMUM FORWARD VOLTAGE
V
= 0 VOLTS
R
f =1.0 MHz
V
RWM
V
@ 20 mA
V
@ 200 mA
V
@ 630 mA
I
@ +25°C
I @ +100°C
R
C
T
F
F
F
R
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
VOLTS
20
VOLTS
0.37
VOLTS
0.50
VOLTS
0.70
µ A
5.0
5.0
5.0
5.0
5.0
5.0
mA
0.6
0.6
0.6
0.6
0.6
0.6
PICO FARADS
D
F
1.60
0.41
3.30
1.70 0.063 0.067
0.55 0.016 0.022
3.70 .130 .146
CDLL6675
50
50
50
50
50
50
CDLL6676
30
0.37
0.50
0.70
G
CDLL6677
40
0.37
0.50
0.70
G1
S
2.54 REF.
0.03 MIN.
.100 REF.
.001 MIN.
CDLL0.2A20
CDLL0.2A30
CDLL0.2A40
20
0.37
0.50
0.70
30
0.37
0.50
0.70
40
0.37
0.50
0.70
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
MAXIMUM RATINGS, 0.5 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
LEAD FINISH: Tin / Lead
Average Rectified Forward Current: 0.5 AMP @ T
= +75°C
EC
THERMAL RESISTANCE: (R
):
Derating: 6.67 mA / °C above T
EC
= +75°C
OJEC
100 ÞC/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z ): 20
ÞC/W maximum
JX
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM
CAPACITANCE @
= 0 VOLTS
POLARITY: Cathode end is banded.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
MAXIMUM
FORWARD VOLTAGE
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
V
R
VOLTAGE
f =1.0 MHz
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
V
RWM
V
@ 0.1A
V
@ 0.5A
I
@ +25°C
I @ +100°C
R
C
T
F
F
R
VOLTS
20
VOLTS
0.50
VOLTS
0.65
µ A
10.0
10.0
10.0
mA
1.0
1.0
1.0
PICO FARADS
CDLL0.5A20
CDLL0.5A30
CDLL0.5A40
50
50
50
30
0.50
0.65
40
0.50
0.65
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
161
CDLL6675 thru CDLL6677
and
CDLL0.2A20 thru CDLL0.2A40
and
CDLL0.5A20 thru CDLL0.5A40
TYPICAL REVERSE LEAKAGE CURRENT AT RATED PIV (PULSED)
10.0
1.0
CDLLO.2A40
CDLLO.5A40
0.1
CDLLO.2A20
CDLLO.5A20
0.01
CDLLO.2A30
CDLLO.5A30
0.001
+25
+50
+75
+100
+125
T , JUNCTION TEMPERATURE (°C)
J
FIGURE 1
TYPICAL FORWARD VOLTAGE
100.0
10.0
1.0
0.1
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , FORWARD VOLTAGE, INSTANTANEOUS (VOLTS)
F
FIGURE 2
162
相关型号：
1N6677UR-1E3
Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-213AA, MELF-2
MICROSEMI
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