1N6690 [SSDI]
20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER; 20 AMP 600-1200伏75纳秒超快速整流器
| 型号： | 1N6690 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 20 AMP 600-1200 Volts 75 nsec ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N6690-1N6693
and
1N6690US-1N6693US
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
20 AMP
600-1200 Volts
75 nsec
1N66 __ __ __
L Screening2/ = None
ULTRA FAST RECTIFIER
⏐
⏐
⏐
⏐
⏐
⏐
L
⏐
⏐
⏐
⏐
L
TX = TX Level
TXV = TXV Level
S = S Level
Features:
• Replaces DO-4 and DO-5
• Ultra Fast Recovery
Package ____ = Axial
SMS = Surface Mount Square Tab
• PIV to 1200 Volts
Voltage
• Low Reverse Leakage
90 = 600 V
• Hermetically Sealed Void-Free Construction3/
• Monolithic Single Chip Construction
• High Surge Rating
91 = 800 V
92 = 1000 V
93 = 1200 V
• Low Thermal Resistance
• Available in Surface Mount Versions (-US Suffix) and in
Button Tab Mounting (See Data Sheet RU0129).
• TX, TXV, and S-Level Screening Available2/
Maximum Ratings
Symbol
Value
Units
Volts
1N6690 & 1N6690US
1N6691 & 1N6691US
1N6692 & 1N6692US
1N6693 & 1N6693US
600
800
1000
1200
Peak Repetitive Reverse and
DC Blocking Voltage
VRRM
VRWM
VR
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 100ºC)
Io
20
Amps
Repetitive Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, Allow Junction to
Reach Equilibrium Between Pulses, TA = 25ºC)
IFSM
375
Amps
ºC
Operating & Storage Temperature
Top & Tstg
-65 to +175
Maximum Thermal Resistance
Junction to Leads, L = 3/8 "
Junction to End Tab
RθJL
RθJE
3.0
2.5
ºC/W
Notes:
1/ For Ordering Information, Price, Operating Curves, and Availability – Contact Factory.
2/ Screening Based on MIL-PRF-19500. Specifics Available on Request.
3/ PIND Testing not Required on Void Free Devices per MIL-PRF-19500.
Axial Leaded
SMS
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC
1N6690-1N6693
and
1N6690US-1N6693US
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Symbol
Max
Units
Instantaneous Forward Voltage Drop
(IF = 20 Adc, 300-500 µs pulse)
TA = 25ºC
TA = -55ºC
1.9
2.2
VF1
VF2
Vdc
Reverse Leakage Current
(Rated VR, 300 µs pulse minimum)
TA = 25ºC
TA = 100ºC
IR1
IR2
10
2.0
μA
mA
Junction Capacitance
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
CJ
trr
250
75
pF
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 250mA, TA = 25ºC)
nsec
Case Outline: Axial
Surface Mount Square Tab (SMS)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC
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