1N5811CBUS [MICROSEMI]
SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS; 表面贴装VOIDLESSHERMETICALLY密封超快速恢复整流二极管玻璃
| 型号： | 1N5811CBUS |
| 厂家： | 
Microsemi |
| 描述： | SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS |
| 文件： | 总3页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/742 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 6.0 Amp rated rectifiers for working peak reverse
voltages from 50 to 150 volts are hermetically sealed with voidless-glass construction using
an internal “Category III” metallurgical bond. These devices are also available in axial-
leaded package configurations (see separate data sheet for 1N5807CB thru 1N5811CB).
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including standard, fast, and
ultrafast device types in both through-hole and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the JEDEC
•
•
•
Ultrafast recovery 6 Amp rectifier series 50 to 150V
registered 1N5807 to 1N5811 series
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
• Voidless-hermetically-sealed glass package
• Extremely robust construction
• Triple-layer passivation
• Internal “Category III” Metallurgical bonds
• JAN, JANTX, & JANTXV available per MIL-PRF-19500/742
•
•
•
Controlled avalanche with peak reverse power
capability
• Further screening options are available for JANS in
accordance with MIL-PRF-19500/742 by using a “SP” prefix
•
Inherently radiation hard as described in Microsemi
MicroNote 050
• Axial-leaded equivalents also available (see separate data
sheet for 1N5807CB thru 1N5811CB)
MAXIMUM RATINGS
Operating Temperature: -65oC to +175oC.
Storage Temperature: -65oC to +175oC.
MECHANICAL AND PACKAGING
•
•
•
•
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
•
TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish.
Average Rectified Forward Current (IO): 6 Amps @ TEC
= 75ºC End Cap temperature (see note 1)
•
•
•
•
MARKING & POLARITY: Cathode band only
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
•
•
•
•
•
Thermal Resistance: 6.5 ºC/W junction to end cap
Thermal Impedance: 1.5 ºC/W @ 10 ms heating time
Forward Surge Current (8.3 ms half sine) 125 Amps
Capacitance: 60 pF at 10 volts, f = 1 MHz
See package dimensions and recommended pad
layout on last page
Solder temperature: 260ºC for 10 s (maximum)
ELECTRICAL CHARACTERISTICS
WORKING BREAKDOWN
AVERAGE
AVERAGE
MAXIMUM
FORWARD
VOLTAGE
@ 4 A
(8.3 ms pulse)
VF
REVERSE
CURRENT
(MAX)
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
(NOTE 4)
PEAK
REVERSE
VOLTAGE
VOLTAGE
(MIN.)
@ 100μA
RECTIFIED RECTIFIED
CURRENT
CURRENT
TYPE
I
I
@ V
I
FSM
O1
O2
RWM
V
t
rr
IR
(NOTE 3)
AMPS
V
@TA=55ºC
(Note 2)
AMPS
RWM
BR
@T =75ºC
EC
(Note 1)
AMPS
VOLTS
VOLTS
VOLTS
ns
μA
25oC
100oC 25oC 125oC
1N5807CBUS
1N5809CBUS
1N5811CBUS
50
60
6.0
6.0
6.0
3.0
3.0
3.0
0.875
0.800
0.800
0.800
5
5
5
525
525
525
125
125
125
30
30
30
100
110
0.875
0.875
150
160
NOTE 1: Rated at TEC = 75ºC. Derate at 60 mA/ºC for TEC above 75ºC
NOTE 2: Derate linearly at 25 mA/ºC above TA = 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to
ambient is sufficiently controlled where TJ(max) does not exceed 175ºC
NOTE 3: TA = 25oC @ IO = 3.0 A and VRWM for ten 8.3 ms surges at 1 minute intervals
NOTE 4: I = 1.0 A, I
= 1.0 A, IR(REC) = 0.10 A and di/dt = 100 A/µs min
RM
F
Copyright © 2007
7-26-2007
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
S C O T T S D A L E D I V I S I O N
SYMBOLS & DEFINITIONS
Definition
Symbol
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VBR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
VRWM
VF
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
IR
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
trr
GRAPHS
FIGURE 1
FIGURE 2
TYPICAL FORWARD CURRENT
vs. FORWARD VOLTAGE
TYPICAL REVERSE CURRENT vs. VOLTAGE
FIGURE 3
FORWARD PULSE CURRENT vs. DURATION
Copyright © 2007
7-26-2007
Microsemi
Scottsdale Division
Page 2
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
1N5807CBUS thru 1N5811CBUS
SURFACE MOUNT VOIDLESS-
HERMETICALLY-SEALED ULTRA FAST
S C O T T S D A L E D I V I S I O N
FIGURE 4
MULTIPLE SURGE CURRENT vs. DURATION
PACKAGE DIMENSIONS AND PAD LAYOUT
NOTE: This Package Outline has also previously
PAD LAYOUT
been identified as “D-5B”
INCHES
0.288
mm
7.32
1.78
3.94
INCHES
mm
A
B
C
MIN
.205
.137
MAX
.225
.142
MIN
5.21
3.48
MAX
5.72
3.61
0.070
BL
BD
ECT
S
0.155
Note: If mounting requires adhesive
separate from the solder, an additional
0.080 inch diameter contact may be
placed in the center between the pads
as an optional spot for cement.
.019
.003
.028
---
0.48
0.08
0.711
---
Copyright © 2007
7-26-2007
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相关型号：
1N5811E3
Rectifier Diode, 1 Phase, 1 Element, 6A, Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, E, 2 PIN
MICROSEMI
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