1N5196E3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2;
| 型号： | 1N5196E3 |
| 厂家： | 
Microsemi |
| 描述： | Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5194
1N5195
1N5196
• AVAILABLE IN JAN, JANTX, AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2 mA/°C From 25°C to 150°C
1.0 mA/°C From 150°C to 175°C
Forward Current: 650 mA
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
V
V
I
I
I
FSM
RM
RWM
O
O
T
= 150°C
T
= 1/120 s
A
P
T
= 25°C
A
V (pk)
V (pk)
mA
mA
A
1N5194
1N5195
1N5196
80
180
250
70
180
225
200
200
200
50
50
50
2
2
2
FIGURE 1
DESIGN DATA
TYPE
V
F
I
V
I
V
I
V
R1 at RWM
R2 at RM
R3 at RWM
@100mA
T
= 25°C
T
= 25°C
T
= 150°C
A
A
A
CASE: Hermetically sealed glass
V dc
nA dc
µA
µA dc
case. DO – 35 outline.
1N5194
1N5195
1N5196
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
100
100
100
5
5
5
LEAD MATERIAL: Copper clad steel.
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
250 °C/W maximum
):
OJEC
THERMAL IMPEDANCE: (Z
°C/W maximum
): 70
JX
O
POLARITY: Cathode end is banded.
MOUNTING POSITION: ANY.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (781) 689-0803
WEBSITE: http://www.microsemi.com
57
IN5194 thru IN5196
1000
100
10
1
0.1
.3
.4
.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
10
1
0.1
.01
.001
NOTE :
All temperatures shown on graphs are
junction temperatures
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
58
相关型号：
1N5196URE3
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
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