1N5196UR [CDI-DIODE]
GENERAL PURPOSE SILICON DIODES; 通用硅二极管
| 型号： | 1N5196UR |
| 厂家： | 
COMPENSATED DEUICES INCORPORATED |
| 描述： | GENERAL PURPOSE SILICON DIODES |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5194UR
1N5195UR
1N5196UR
CDLL5194
CDLL5195
CDLL5196
• AVAILABLE IN JAN, JANTX AND JANTXV
PER MIL-PRF-19500/118
• GENERAL PURPOSE SILICON DIODES
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 200 mA
Derating: 1.2mA/°C from 25ºC to 150ºC
1.0mA/°C from 150ºC to 175ºC
Forward Current: 650mA
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
F
1.60
0.41
3.30
1.70 0.063 0.067
0.55 0.016 0.022
3.70 .130 .146
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
G
G1
S
2.54 REF.
0.03 MIN.
.100 REF.
.001 MIN.
V
V
I
I
I
FSM
RM
RWM
O
O
TYPE
T
= +150°C
T
=1/120 S
=25ºC
A
P
T
A
V
V
mA
mA
A
(pk)
(pk)
FIGURE 1
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
80
180
250
70
180
225
200
200
200
50
50
50
2
2
2
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
V
F
@100mA
I
at V
I
at V
I
at V
R1
RWM
R2
T
RM
R3
T
RWM
TYPE
=25ºC
= 150°C
A
A
LEAD FINISH: Tin / Lead
V dc
nA dc
µA
µA dc
CDLL, 1N5194UR
CDLL, 1N5195UR
CDLL, 1N5196UR
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
25
25
25
100
100
100
5
5
5
THERMAL RESISTANCE: (R
100 ˚C/W maximum
):
OJEC
THERMAL IMPEDANCE: (Z
˚C/W maximum
): 70
OJX
POLARITY: Cathode end is banded.
MOUNTING POSITION: Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
WEBSITE: http://www.cdi-diodes.com
FAX (781) 665-7379
E-mail: mail@cdi-diodes.com
IN5194UR thru IN5196UR, CDLL5194 thru CDLL5196
1000
100
10
1
0.1
.3
.4.5
.6
.7
.8
.9
1.0
1.1
1.2
1.3
VF - Forward Voltage (V)
FIGURE 2
Typical Forward Current
vs Forward Voltage
1000
100
10
1
0.1
.01
.001
NOTE :
All temperatures shown on graphs are
junction temperatures
20 40 60 80 100 120 140
Percent of Reverse Working Voltage (%)
FIGURE 3
Typical Reverse Current
vs Reverse Voltage
相关型号：
1N5196URE3
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
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