1N5194URE3 [MICROSEMI]
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2;![1N5194URE3](http://pdffile.icpdf.com/pdf2/p00227/img/icpdf/1N5194URE3_1329966_icpdf.jpg)
型号: | 1N5194URE3 |
厂家: | ![]() |
描述: | Rectifier Diode, 1 Element, 0.2A, Silicon, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2 二极管 |
文件: | 总1页 (文件大小:35K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
SWITCHING DIODE
– METALLURGICALLY BONDED
– HERMETICALLY SEALED
– DOUBLE PLUG CONSTRUCTION
Qualified per MIL-PRF-19500/118
DEVICES
QUALIFIED LEVELS
JAN
1N5194UR
JANTX
JANTXV
MAXIMUM RATING AT 25°C
Operating Temperature:
Storage Temperature:
-65°C to +175°C
-65°C to +175°C
.016" - .022"
.41mm - .55mm
Surge Current, sine, 8.3mS:
Total Power Dissipation, 25°C:
Max. Operating Current, 25°C:
D.C. Reverse Voltage (VRWM):
2A
500mW
200mA
70V
.063" - .067"
1.60mm - 1.70mm
DC ELECTRICAL CHARACTERISTICS
VF
IR
.130" - .146"
3.30mm - 3.70mm
Ambient
(°C)
IF
mA
Min
V
Max
V
Ambient
(°C)
Min
µA
Max
µA
V (dc)
70
25
100
100
0.8
-
1.0
1.2
25
25
-
-
-
0.025
1.0
-55
80
MIN .001"
.03mm
150
70
5.0
DESIGN DATA
Case: Hermetically sealed glass package per MIL-PRF-
19500/118 DO-213AA outline
Lead Material: Copper clad steel
Lead Finish: Tin / Lead
Thermal Impedance (ZθJX): 70°C/W maximum
Polarity: Cathode end is banded
LDS-0032 Rev. 1 (072072)
Page 1 of 1
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00270/img/page/1N5196E3_1621624_files/1N5196E3_1621624_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00270/img/page/1N5196E3_1621624_files/1N5196E3_1621624_2.jpg)
1N5196E3
Rectifier Diode, 1 Element, 0.1A, Silicon, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
MICROSEMI
©2020 ICPDF网 联系我们和版权申明