TC4421_13 [MICROCHIP]
9A High-Speed MOSFET Drivers; 9A高速MOSFET驱动器
| 型号： | TC4421_13 |
| 厂家： | 
MICROCHIP |
| 描述： | 9A High-Speed MOSFET Drivers |
| 文件： | 总20页 (文件大小：373K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC4421/TC4422
9A High-Speed MOSFET Drivers
Features
General Description
• High Peak Output Current: 9A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
The TC4421/TC4422 are high-current buffer/drivers
capable of driving large MOSFETs and IGBTs.
These devices are essentially immune to any form of
upset, except direct overvoltage or over-dissipation.
They cannot be latched under any conditions within
their power and voltage ratings. These parts are not
subject to damage or improper operation when up to
5V of ground bounce is present on their ground termi-
nals. They can accept, without damage or logic upset,
more than 1A inductive current of either polarity being
forced back into their outputs. In addition, all terminals
are fully protected against up to 4 kV of electrostatic
discharge.
• High Continuous Output Current: 2A Max
• Fast Rise and Fall Times:
- 30 ns with 4,700 pF Load
- 180 ns with 47,000 pF Load
• Short Propagation Delays: 30 ns (typ)
• Low Supply Current:
- With Logic ‘1’ Input – 200 µA (typ)
- With Logic ‘0’ Input – 55 µA (typ)
• Low Output Impedance: 1.4 (typ)
• Latch-Up Protected: Will Withstand 1.5A Output
Reverse Current
The TC4421/TC4422 inputs may be driven directly
from either TTL or CMOS (3V to 18V). In addition,
300 mV of hysteresis is built into the input, providing
noise immunity and allowing the device to be driven
from slowly rising or falling waveforms.
• Input Will Withstand Negative Inputs Up To 5V
• Pin-Compatible with the TC4420/TC4429
6A MOSFET Driver
With both surface-mount and pin-through-hole
packages and four operating temperature range offer-
ings, the TC4421/22 family of 9A MOSFET drivers fit
into most any application where high gate/line
capacitance drive is required.
• Space-saving 8-Pin 6x5 DFN Package
Applications
• Line Drivers for Extra Heavily-Loaded Lines
• Pulse Generators
• Driving the Largest MOSFETs and IGBTs
• Local Power ON/OFF Switch
• Motor and Solenoid Driver
(1)
Package Types
8-Pin PDIP/ TC4421 TC4422
SOIC
8-Pin DFN(2) TC4421 TC4422
5-Pin TO-220
Tab is
V
1
2
3
4
DD
V
V
DD
8
7
6
5
DD
Common
to V
V
V
DD
V
1
2
3
4
8
7
6
5
DD
DD
TC4421
TC4422
INPUT
NC
OUTPUT
OUTPUT
GND
DD
INPUT
NC
OUTPUT
OUTPUT
GND
OUTPUT OUTPUT
OUTPUT OUTPUT
TC4421
TC4422
TC4421
TC4422
GND
GND
GND
GND
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated.
2002-2012 Microchip Technology Inc.
DS21420E-page 1
TC4421/TC4422
Functional Block Diagram
VDD
TC4421
Inverting
200 µA
300 mV
Output
TC4422
Non-Inverting
Input
4.7V
GND
Effective
Input
C = 25 pF
DS21420E-page 2
2002-2012 Microchip Technology Inc.
TC4421/TC4422
† Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage .....................................................+20V
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)
Input Current (VIN > VDD)...................................50 mA
Package Power Dissipation (TA 70°C)
5-Pin TO-220....................................................1.6W
DFN.............................................................. Note 2
PDIP............................................................730 mW
SOIC............................................................750 mW
Package Power Dissipation (TA 25°C)
5-Pin TO-220 (With Heatsink) ........................12.5W
Thermal Impedances (To Case)
5-Pin TO-220 RJ-C ......................................10°C/W
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
1.8
1.3
—
—
0.8
+10
V
V
–10
µA 0VVINVDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
VOH
VOL
ROH
ROL
IPK
VDD – 0.025
—
—
—
0.025
—
V
V
A
A
DC TEST
—
—
—
—
2
DC TEST
1.4
0.9
9.0
—
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
VDD = 18V
1.7
—
IDC
—
10V VDD 18V, TA = +25°C
(TC4421/TC4422 CAT only) (Note 3)
Latch-Up Protection
IREV
—
>1.5
—
A
Duty cycle2%, t 300 µsec
Withstand Reverse Current
Switching Time (Note 1)
Rise Time
tR
tF
—
—
—
—
60
60
30
33
75
75
60
60
ns Figure 4-1, CL = 10,000 pF
ns Figure 4-1, CL = 10,000 pF
ns Figure 4-1
Fall Time
Delay Time
tD1
tD2
Delay Time
ns Figure 4-1
Power Supply
Power Supply Current
IS
—
—
0.2
55
1.5
150
mA VIN = 3V
µA VIN = 0V
Operating Input Voltage
VDD
4.5
—
18
V
Note 1: Switching times ensured by design.
2: Package power dissipation is dependent on the copper pad area on the PCB.
3: Tested during characterization, not production tested.
2002-2012 Microchip Technology Inc.
DS21420E-page 3
TC4421/TC4422
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V.
Parameters
Sym
Min
Typ
Max Units
Conditions
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
—
—
—
—
0.8
+10
V
V
–10
µA 0VVINVDD
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note 1)
Rise Time
VOH
VOL
ROH
ROL
VDD – 0.025
—
—
—
0.025
3.6
V
V
DC TEST
—
—
—
DC TEST
2.4
1.8
IOUT = 10 mA, VDD = 18V
IOUT = 10 mA, VDD = 18V
2.7
tR
tF
—
—
—
—
60
60
50
65
120
120
80
ns
ns
Figure 4-1, CL = 10,000 pF
Figure 4-1, CL = 10,000 pF
Fall Time
Delay Time
tD1
tD2
ns Figure 4-1
ns Figure 4-1
Delay Time
80
Power Supply
Power Supply Current
IS
—
—
—
—
3
0.2
mA VIN = 3V
VIN = 0V
Operating Input Voltage
VDD
4.5
—
18
V
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.
Parameters
Temperature Ranges
Sym
Min
Typ
Max
Units
Conditions
Specified Temperature Range (C)
Specified Temperature Range (E)
Specified Temperature Range (V)
Maximum Junction Temperature
Storage Temperature Range
TA
TA
TA
TJ
TA
0
—
—
—
—
—
+70
+85
°C
°C
°C
°C
°C
–40
–40
—
+125
+150
+150
–65
Package Thermal Resistances
Thermal Resistance, 5L-TO-220
Thermal Resistance, 8L-6x5 DFN
JA
JA
—
—
71
—
—
°C/W
33.2
°C/W Typical 4-layer board with
vias to ground plane
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
JA
JA
—
—
125
120
—
—
°C/W
°C/W
DS21420E-page 4
2002-2012 Microchip Technology Inc.
TC4421/TC4422
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
220
200
180
160
140
120
100
80
180
22,000 pF
160
22,000 pF
10,000 pF
140
120
10,000 pF
100
80
60
4700 pF
4700 pF
60
40
40
1000 pF
20
20
0
1000 pF
6
0
4
8
10
V
12
14
16
18
14
16
18
4
6
8
10
12
V
(V)
(V)
DD
DD
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
300
250
200
150
300
250
200
150
100
50
5V
5V
10V
10V
15V
15V
100
50
0
0
100
1000
10,000
(pF)
100,000
100
1000
10,000
(pF)
100,000
C
C
LOAD
LOAD
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
50
45
90
80
C
V
= 10,000 pF
= 15V
C
= 1000 pF
LOAD
DD
LOAD
70
60
50
40
30
40
35
30
25
t
RISE
t
D2
t
D1
t
FALL
-40
0
40
80
120
4
6
8
10
12
(V)
14
16
18
T
(°C)
V
A
DD
FIGURE 2-3:
Rise and Fall Times vs.
FIGURE 2-6:
Propagation Delay vs.
Temperature.
Supply Voltage.
2002-2012 Microchip Technology Inc.
DS21420E-page 5
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
220
180
160
140
V
= 18V
V
= 18V
47,000 pF
DD
DD
22,000 pF
200
180
160
140
120
100
80
2 MHz
10,000 pF
120
100
63.2 kHz
20 kHz
1.125 MHz
0.1 µF
80
60
632 kHz
200 kHz
60
40
4700 pF
40
20
0
20
0
470 pF
100
1000
10,000
(pF)
100,000
10
100
Frequency (kHz)
1000
C
LOAD
FIGURE 2-7:
Supply Current vs.
FIGURE 2-10:
Supply Current vs.
Capacitive Load (VDD = 18V).
Frequency (VDD = 18V).
180
180
V
= 12V
V
= 12V
22,000 pF
10,000 pF
DD
DD
160
140
120
100
80
160
140
120
100
80
47,000 pF
2 MHz
63.2 kHz
20 kHz
1.125 MHz
60
60
4700 pF
0.1 µF
40
20
0
40
632 kHz
200 kHz
20
470 pF
1000
0
10
100
100
1000
10,000
(pF)
100,000
C
Frequency (kHz)
LOAD
FIGURE 2-8:
Supply Current vs.
FIGURE 2-11:
Supply Current vs.
Capacitive Load (VDD = 12V).
Frequency (VDD = 12V).
100
120
V
= 6V
200 kHz
V
= 6V
DD
47,000 pF
22,000 pF
10,000 pF
DD
90
80
70
60
50
40
30
20
10
0
100
80
4700 pF
60
63.2 kHz
20 kHz
2 MHz
40
632 kHz
0.1 µF
20
0
470 pF
1000
100
1000
10,000
(pF)
100,000
10
100
C
Frequency (kHz)
LOAD
FIGURE 2-9:
Supply Current vs.
FIGURE 2-12:
Supply Current vs.
Capactive Load (VDD = 6V).
Frequency (VDD = 6V).
DS21420E-page 6
2002-2012 Microchip Technology Inc.
TC4421/TC4422
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
50
45
120
V
C
= 18V
V
C
= 10V
DD
110
100
90
80
70
60
50
40
30
20
10
0
DD
= 10,000 pF
= 10,000 pF
LOAD
= 5V
LOAD
V
IN
40
35
30
25
20
t
t
D2
t
D1
D2
t
D1
–60 –40 –20
0
20 40 60 80 100 120
C)
1
2
3
4
5
6
7
8
9
10
T
(°
Input Amplitude (V)
A
FIGURE 2-13:
Propagation Delay vs. Input
FIGURE 2-16:
Propagation Delay vs.
Amplitude.
Temperature.
-6
3
10
10
V
= 18V
DD
-7
Input = 1
Input = 0
10
2
10
-8
10
4
6
8
10
12
(V)
14
16
18
-60 -40 -20
0
20 40 60 80 100 120
C)
V
DD
T
(°
J
NOTE: The values on this graph represent the loss seen
by the driver during a complete cycle. For the loss
in a single transition, divide the stated value by 2.
FIGURE 2-17:
Quiescent Supply Current
vs. Temperature.
FIGURE 2-14:
Crossover Energy vs.
Supply Voltage.
6
6
5.5
5
5.5
5
4.5
4
T
= 150
°
C
4.5
4
J
3.5
3
3.5
3
T
= 150°C
J
2.5
2
2.5
2
T
J
= 25°C
1.5
1
1.5
T
= 25°C
1
J
0.5
0.5
4
6
8
10
V
12
(V)
14
16
18
4
6
8
10
V
12
(V)
14
16
18
DD
DD
FIGURE 2-15:
Resistance vs. Supply Voltage.
High-State Output
FIGURE 2-18:
Resistance vs. Supply Voltage.
Low-State Output
2002-2012 Microchip Technology Inc.
DS21420E-page 7
TC4421/TC4422
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
Pin No.
8-Pin PDIP,
SOIC
Pin No.
5-Pin TO-220
Pin No.
8-Pin DFN
Symbol
Description
1
2
1
2
—
1
VDD
INPUT
NC
Supply input, 4.5V to 18V
Control input, TTL/CMOS compatible input
No connection
3
3
—
2
4
4
GND
Ground
5
5
4
GND
Ground
6
6
5
OUTPUT
OUTPUT
VDD
CMOS push-pull output
CMOS push-pull output
Supply input, 4.5V to 18V
Exposed metal pad
7
7
—
3
8
8
—
—
PAD
—
—
TAB
NC
VDD
Metal tab is at the VDD potential
3.1
Supply Input (V
)
3.3
CMOS Push-Pull Output
DD
The VDD input is the bias supply for the MOSFET driver
and is rated for 4.5V to 18V with respect to the ground
pin. The VDD input should be bypassed to ground with
a local ceramic capacitor. The value of the capacitor
should be chosen based on the capacitive load that is
being driven. A minimum value of 1.0 µF is suggested.
The MOSFET driver output is a low-impedance,
CMOS, push-pull style output capable of driving a
capacitive load with 9.0A peak currents. The MOSFET
driver output is capable of withstanding 1.5A peak
reverse currents of either polarity.
3.4
Ground
3.2
Control Input
The ground pins are the return path for the bias current
and for the high peak currents that discharge the load
capacitor. The ground pins should be tied into a ground
plane or have very short traces to the bias supply
source return.
The MOSFET driver input is a high-impedance,
TTL/CMOS compatible input. The input also has
300 mV of hysteresis between the high and low
thresholds that prevents output glitching even when the
rise and fall time of the input signal is very slow.
3.5
Exposed Metal Pad
The exposed metal pad of the 6x5 DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
DS21420E-page 8
2002-2012 Microchip Technology Inc.
TC4421/TC4422
4.0
APPLICATIONS INFORMATION
+5V
90%
Input
V
DD = 18V
10%
0V
+18V
Output
0V
tD1
90%
tD2
tF
tR
4.7 µF
90%
1
8
10%
10%
0.1 µF
Input
0.1 µF
Inverting Driver
TC4421
2
6
7
Output
CL = 10,000 pF
+5V
90%
Input
4
5
10%
0V
+18V
90%
90%
tD1
tD2
tF
tR
Output
0V
Input: 100 kHz,
square wave,
10%
10%
tRISE = tFALL 10 nsec
Non-Inverting Driver
TC4422
Note: Pinout shown is for the DFN, PDIP and SOIC packages.
FIGURE 4-1: Switching Time Test Circuits.
2002-2012 Microchip Technology Inc.
DS21420E-page 9
TC4421/TC4422
5.0
5.1
PACKAGING INFORMATION
Package Marking Information
5-Lead TO-220
Example:
XXXXXXXXX
XXXXXXXXX
TC4421CAT
XXXXXXXXX
YYWWNNN
0420256
8-Lead DFN
Example:
XXXXXXX
XXXXXXX
XXYYWW
NNN
TC4421
EMF
0420
256
8-Lead PDIP (300 mil)
Example:
XXXXXXXX
XXXXXNNN
TC4421
CPA256
YYWW
0420
8-Lead SOIC (208 mil)
Example:
XXXXXXXX
XXXXXXXX
GTC4421
ESM
YYWWNNN
0420256
Legend: XX...X Customer-specific information
Y
YY
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
WW
NNN
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
e
3
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator (
can be found on the outer packaging for this package.
*
)
3
e
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
DS21420E-page 10
2002-2012 Microchip Technology Inc.
TC4421/TC4422
5-Lead Plastic Transistor Outline (AT) (TO-220)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
L
H1
Q
b
e3
e1
E
e
EJECTOR PIN
ØP
(5X)
a
C1
A
J1
F
D
Units
INCHES*
MIN
.060
MILLIMETERS
MIN MAX
1.52
Dimension Limits
MAX
.072
e
Lead Pitch
1.83
6.93
1.02
4.83
10.54
14.99
6.55
1.40
2.87
3.96
14.22
2.92
0.56
1.02
Overall Lead Centers
Space Between Leads
Overall Height
e1
e3
A
.263
.030
.160
.385
.560
.234
.045
.103
.146
.540
.090
.014
.025
.273
.040
.190
.415
.590
.258
.055
.113
.156
.560
.115
.022
.040
6.68
0.76
4.06
9.78
14.22
5.94
1.14
2.62
3.71
13.72
2.29
0.36
0.64
Overall Width
E
Overall Length
D
Flag Length
H1
F
Flag Thickness
Q
Through Hole Center
Through Hole Diameter
Lead Length
P
L
Base to Bottom of Lead
Lead Thickness
J1
C1
b
Lead Width
a
Mold Draft Angle
3°
7°
3°
7°
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" (0.254mm) per side.
JEDEC equivalent: TO-220
Drawing No. C04-036
2002-2012 Microchip Technology Inc.
DS21420E-page 11
TC4421/TC4422
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
DS21420E-page 12
2002-2012 Microchip Technology Inc.
TC4421/TC4422
8-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E1
D
2
n
1
E
A2
A
L
c
A1
B1
B
p
eB
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
8
MAX
n
p
Number of Pins
Pitch
8
.100
.155
.130
2.54
Top to Seating Plane
A
.140
.170
3.56
2.92
3.94
3.30
4.32
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
A2
A1
E
.115
.015
.300
.240
.360
.125
.008
.045
.014
.310
5
.145
3.68
0.38
7.62
6.10
9.14
3.18
0.20
1.14
0.36
7.87
5
.313
.250
.373
.130
.012
.058
.018
.370
10
.325
.260
.385
.135
.015
.070
.022
.430
15
7.94
6.35
9.46
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
9.78
3.43
0.38
1.78
0.56
10.92
15
E1
D
Tip to Seating Plane
Lead Thickness
L
c
Upper Lead Width
B1
B
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-018
2002-2012 Microchip Technology Inc.
DS21420E-page 13
TC4421/TC4422
8-Lead Plastic Small Outline (SM) – Medium, 208 mil Body (SOIJ)
(JEITA/EIAJ Standard, Formerly called SOIC)
Note: For the most current package drawings, please see the Microchip Packaging Specification located
at http://www.microchip.com/packaging
E
E1
p
D
2
n
1
B
α
c
A2
A
φ
A1
L
β
Units
Dimension Limits
INCHES*
NOM
8
MILLIMETERS
NOM
8
MIN
MAX
MIN
MAX
n
p
Number of Pins
Pitch
.050
1.27
1.97
1.88
0.13
7.95
5.28
5.21
0.64
4
Overall Height
Molded Package Thickness
Standoff
A
A2
A1
E
.070
.075
.074
.005
.313
.208
.205
.025
4
.080
1.78
2.03
.069
.002
.300
.201
.202
.020
0
.078
.010
.325
.212
.210
.030
8
1.75
0.05
7.62
5.11
5.13
0.51
0
1.98
0.25
8.26
5.38
5.33
0.76
8
Overall Width
Molded Package Width
Overall Length
Foot Length
E1
D
L
φ
Foot Angle
c
Lead Thickness
Lead Width
.008
.014
0
.009
.017
12
.010
.020
15
0.20
0.36
0
0.23
0.43
12
0.25
0.51
15
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
*Controlling Parameter
Notes:
0
12
15
0
12
15
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .010" (0.254mm) per side.
Drawing No. C04-056
DS21420E-page 14
2002-2012 Microchip Technology Inc.
TC4421/TC4422
6.0
REVISION HISTORY
Revision E (December 2012)
Added a note to each package outline drawing.
2002-2012 Microchip Technology Inc.
DS21420E-page 15
TC4421/TC4422
NOTES:
DS21420E-page 16
2002-2012 Microchip Technology Inc.
TC4421/TC4422
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X
XX
XXX
X
a)
b)
c)
TC4421CAT: 9A High-Speed Inverting
Temperature Package Tape & Reel
Range
PB Free
MOSFET Driver,
TO-220 package,
0°C to +70°C.
TC4421ESMG: 9A High-Speed Inverting
MOSFET Driver,
Device:
TC4421: 9A High-Speed MOSFET Driver, Inverting
TC4422: 9A High-Speed MOSFET Driver, Non-Inverting
PB Free SOIC package,
-40°C to +85°C.
Temperature Range:
C
E
V
=
=
=
0°C to +70°C (PDIP and TO-220 Only)
-40°C to +85°C
-40°C to +125°C
TC4421VMF: 9A High-Speed Inverting
MOSFET Driver,
DFN package,
-40°C to +125°C.
Package:
AT
MF
=
=
TO-220, 5-lead (C-Temp Only)
Dual, Flat, No-Lead (6x5 mm Body), 8-lead
a)
b)
TC4422VPA: 9A High-Speed
Non-Inverting MOSFET
Driver, PDIP package,
-40°C to +125°C.
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead
(Tape and Reel)
PA
=
=
Plastic DIP (300 mil Body), 8-lead
Plastic SOIC (208 mil Body), 8-lead
SM
SM713 = Plastic SOIC (208 mil Body), 8-lead
(Tape and Reel)
TC4422EPA: 9A High-Speed
Non-Inverting
MOSFET Driver,
PDIP package,
-40°C to +85°C.
PB Free
G
=
=
Lead-Free device
Blank
c)
TC4422EMF: 9A High-Speed
Inverting MOSFET Driver,
DFN package,
* Available on selected packages. Contact your local sales
representative for availability
-40°C to +85°C.
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002-2012 Microchip Technology Inc.
DS21420E-page 17
TC4421/TC4422
NOTES:
DS21420E-page 18
2002-2012 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,
PICSTART, PIC logo, rfPIC, SST, SST Logo, SuperFlash
and UNI/O are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
32
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MTP, SEEVAL and The Embedded Control Solutions
Company are registered trademarks of Microchip Technology
Incorporated in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
Analog-for-the-Digital Age, Application Maestro, BodyCom,
chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB
Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O,
Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA
and Z-Scale are trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
GestIC and ULPP are registered trademarks of Microchip
Technology Germany II GmbH & Co. & KG, a subsidiary of
Microchip Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2002-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 9781620767955
QUALITY MANAGEMENT SYSTEM
CERTIFIED BY DNV
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
== ISO/TS 16949 ==
2002-2012 Microchip Technology Inc.
DS21420E-page 19
Worldwide Sales and Service
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://www.microchip.com/
support
Asia Pacific Office
Suites 3707-14, 37th Floor
Tower 6, The Gateway
Harbour City, Kowloon
Hong Kong
Tel: 852-2401-1200
Fax: 852-2401-3431
India - Bangalore
Tel: 91-80-3090-4444
Fax: 91-80-3090-4123
Austria - Wels
Tel: 43-7242-2244-39
Fax: 43-7242-2244-393
Denmark - Copenhagen
Tel: 45-4450-2828
Fax: 45-4485-2829
India - New Delhi
Tel: 91-11-4160-8631
Fax: 91-11-4160-8632
France - Paris
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
India - Pune
Tel: 91-20-2566-1512
Fax: 91-20-2566-1513
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
Web Address:
www.microchip.com
Germany - Munich
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Japan - Osaka
Tel: 81-66-152-7160
Fax: 81-66-152-9310
Atlanta
Duluth, GA
Tel: 678-957-9614
Fax: 678-957-1455
China - Beijing
Tel: 86-10-8569-7000
Fax: 86-10-8528-2104
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Japan - Yokohama
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
China - Chengdu
Tel: 86-28-8665-5511
Fax: 86-28-8665-7889
Boston
Westborough, MA
Tel: 774-760-0087
Fax: 774-760-0088
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
Korea - Daegu
Tel: 82-53-744-4301
Fax: 82-53-744-4302
China - Chongqing
Tel: 86-23-8980-9588
Fax: 86-23-8980-9500
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Spain - Madrid
Tel: 34-91-708-08-90
Fax: 34-91-708-08-91
Korea - Seoul
China - Hangzhou
Tel: 86-571-2819-3187
Fax: 86-571-2819-3189
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
UK - Wokingham
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Cleveland
Independence, OH
Tel: 216-447-0464
Fax: 216-447-0643
China - Hong Kong SAR
Tel: 852-2943-5100
Fax: 852-2401-3431
Malaysia - Kuala Lumpur
Tel: 60-3-6201-9857
Fax: 60-3-6201-9859
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
China - Nanjing
Tel: 86-25-8473-2460
Fax: 86-25-8473-2470
Malaysia - Penang
Tel: 60-4-227-8870
Fax: 60-4-227-4068
China - Qingdao
Tel: 86-532-8502-7355
Fax: 86-532-8502-7205
Philippines - Manila
Tel: 63-2-634-9065
Fax: 63-2-634-9069
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Indianapolis
Noblesville, IN
Tel: 317-773-8323
Fax: 317-773-5453
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
Taiwan - Hsin Chu
Tel: 886-3-5778-366
Fax: 886-3-5770-955
Los Angeles
China - Shenzhen
Tel: 86-755-8864-2200
Fax: 86-755-8203-1760
Taiwan - Kaohsiung
Tel: 886-7-213-7828
Fax: 886-7-330-9305
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
China - Wuhan
Tel: 86-27-5980-5300
Fax: 86-27-5980-5118
Taiwan - Taipei
Tel: 886-2-2508-8600
Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA
Tel: 408-961-6444
Fax: 408-961-6445
China - Xian
Tel: 86-29-8833-7252
Fax: 86-29-8833-7256
Thailand - Bangkok
Tel: 66-2-694-1351
Fax: 66-2-694-1350
Toronto
Mississauga, Ontario,
Canada
China - Xiamen
Tel: 905-673-0699
Fax: 905-673-6509
Tel: 86-592-2388138
Fax: 86-592-2388130
China - Zhuhai
Tel: 86-756-3210040
Fax: 86-756-3210049
11/27/12
DS21420E-page 20
2002-2012 Microchip Technology Inc.
相关型号：
TC4422AVMF13
10 A BUF OR INV BASED MOSFET DRIVER, PDSO8, 6 X 8 MM, LEAD FREE, PLASTIC, MO-220, DFN-8
MICROCHIP
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