TC4422AVOA [MICROCHIP]

9A High-Speed MOSFET Drivers; 9A高速MOSFET驱动器
TC4422AVOA
型号: TC4422AVOA
厂家: MICROCHIP    MICROCHIP
描述:

9A High-Speed MOSFET Drivers
9A高速MOSFET驱动器

驱动器 MOSFET驱动器 驱动程序和接口 接口集成电路 光电二极管 PC
文件: 总22页 (文件大小:360K)
中文:  中文翻译
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TC4421A/TC4422A  
9A High-Speed MOSFET Drivers  
General Description  
Features  
• High Peak Output Current: 10A (typ.)  
The TC4421A/TC4422A are improved versions of the  
earlier TC4421/TC4422 family of single-output  
MOSFET drivers. These devices are high-current  
buffer/drivers capable of driving large MOSFETs and  
Insulated Gate Bipolar Transistors (IGBTs). The  
TC4421A/TC4422A have matched output rise and fall  
times, as well as matched leading and falling-edge  
propagation delay times. The TC4421A/TC4422A  
devices also have very low cross-conduction current,  
reducing the overall power dissipation of the device.  
• Low Shoot-Through/Cross-Conduction Current in  
Output Stage  
• Wide Input Supply Voltage Operating Range:  
- 4.5V to 18V  
• High Continuous Output Current: 2A (max.)  
• Matched Fast Rise and Fall Times:  
- 15 ns with 4,700 pF Load  
- 135 ns with 47,000 pF Load  
These devices are essentially immune to any form of  
upset, except direct overvoltage or over-dissipation.  
They cannot be latched under any conditions within  
their power and voltage ratings. These parts are not  
subject to damage or improper operation when up to  
5V of ground bounce is present on their ground  
terminals. They can accept, without damage or logic  
upset, more than 1A inductive current of either polarity  
being forced back into their outputs. In addition, all  
terminals are fully protected against up to 4 kV of  
electrostatic discharge.  
• Matched Short Propagation Delays: 42 ns (typ.)  
• Low Supply Current:  
- With Logic ‘1’ Input – 130 µA (typ.)  
- With Logic ‘0’ Input – 33 µA (typ.)  
• Low Output Impedance: 1.2Ω (typ.)  
• Latch-Up Protected: Will Withstand 1.5A Output  
Reverse Current  
• Input Will Withstand Negative Inputs Up To 5V  
• Pin-Compatible with the TC4420/TC4429  
and TC4421/TC4422 MOSFET Drivers  
The TC4421A/TC4422A inputs may be driven directly  
from either TTL or CMOS (3V to 18V). In addition,  
300 mV of hysteresis is built into the input, providing  
noise immunity and allowing the device to be driven  
from slowly rising or falling waveforms.  
• Space-Saving, Thermally-Enhanced, 8-Pin DFN  
Package  
Applications  
• Line Drivers for Extra Heavily-Loaded Lines  
• Pulse Generators  
With both surface-mount and pin-through-hole  
packages, in addition to a wide operating temperature  
range, the TC4421A/TC4422A family of 9A MOSFET  
drivers fit into most any application where high gate/line  
capacitance drive is required.  
• Driving the Largest MOSFETs and IGBTs  
• Local Power ON/OFF Switch  
• Motor and Solenoid Driver  
• LF Initiator  
(1)  
Package Types  
8-Pin DFN(2) TC4421A TC4422A  
5-Pin TO-220  
8-Pin  
PDIP/SOIC  
TC4421A TC4422A  
Tab is  
V
1
2
3
4
DD  
V
V
DD  
8
7
6
5
Common  
to V  
V
8
V
DD  
V
1
2
3
4
DD  
DD  
DD  
DD  
INPUT  
NC  
7
6
5
OUTPUT OUTPUT  
OUTPUT OUTPUT  
INPUT  
NC  
OUTPUT  
OUTPUT  
GND  
OUTPUT  
OUTPUT  
GND  
TC4421A  
TC4422A  
TC4421A  
TC4422A  
TC4421A  
TC4422A  
GND  
GND  
GND  
GND  
Note 1: Duplicate pins must both be connected for proper operation.  
2: Exposed pad of the DFN package is electrically isolated.  
© 2005 Microchip Technology Inc.  
DS21946A-page 1  
TC4421A/TC4422A  
Functional Block Diagram  
VDD  
TC4421A  
Inverting  
130 µA  
300 mV  
Output  
Output  
Cross-Conduction  
Reduction and Pre-Drive  
Circuitry  
TC4422A  
Non-Inverting  
Input  
GND  
4.7V  
Effective  
Input  
C = 25 pF  
DS21946A-page 2  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
† Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device. These  
are stress ratings only and functional operation of the device  
at these or any other conditions above those indicated in the  
operation sections of the specifications is not implied.  
Exposure to Absolute Maximum Rating conditions for  
extended periods may affect device reliability.  
1.0  
ELECTRICAL  
CHARACTERISTICS  
Absolute Maximum Ratings †  
Supply Voltage .....................................................+20V  
Input Voltage .................... (VDD + 0.3V) to (GND – 5V)  
Input Current (VIN > VDD)...................................50 mA  
DC CHARACTERISTICS  
Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V.  
Parameters  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Input  
Logic ‘1’, High Input Voltage  
Logic ‘0’, Low Input Voltage  
Input Current  
VIH  
VIL  
IIN  
2.4  
1.8  
1.3  
0.8  
V
V
–10  
–5  
+10  
µA 0V VIN VDD  
Input Voltage  
VIN  
VDD – 0.3  
V
Output  
High Output Voltage  
Low Output Voltage  
Output Resistance, High  
Output Resistance, Low  
Peak Output Current  
Continuous Output Current  
VOH  
VOL  
ROH  
ROL  
IPK  
VDD – 0.025  
0.025  
1.5  
1.1  
V
V
Ω
Ω
A
A
DC Test  
2
DC Test  
1.25  
0.8  
10.0  
IOUT = 10 mA, VDD = 18V  
IOUT = 10 mA, VDD = 18V  
VDD = 18V  
IDC  
10V VDD 18V, TA = +25°C  
(TC4421A/TC4422A CAT only)  
(Note 2)  
Latch-Up Protection  
Withstand Reverse Current  
IREV  
>1.5  
A
Duty cycle 2%, t 300 µsec  
Switching Time (Note 1)  
Rise Time  
tR  
tF  
28  
26  
38  
42  
34  
32  
45  
49  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
Fall Time  
Propagation Delay Time  
Propagation Delay Time  
Power Supply  
tD1  
tD2  
Power Supply Current  
IS  
130  
35  
250  
100  
18  
µA VIN = 3V  
µA VIN = 0V  
V
Operating Input Voltage  
VDD  
4.5  
Note 1: Switching times ensured by design.  
2: Tested during characterization, not production tested.  
© 2005 Microchip Technology Inc.  
DS21946A-page 3  
TC4421A/TC4422A  
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)  
Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V.  
Parameters  
Sym  
Min  
Typ  
Max Units  
Conditions  
Input  
Logic ‘1’, High Input Voltage  
Logic ‘0’, Low Input Voltage  
Input Current  
VIH  
VIL  
IIN  
2.4  
0.8  
+10  
V
V
–10  
µA 0V VIN VDD  
Output  
High Output Voltage  
Low Output Voltage  
Output Resistance, High  
Output Resistance, Low  
Switching Time (Note 1)  
Rise Time  
VOH  
VOL  
ROH  
ROL  
VDD – 0.025  
0.025  
2.0  
V
V
Ω
Ω
DC Test  
DC Test  
IOUT = 10 mA, VDD = 18V  
IOUT = 10 mA, VDD = 18V  
1.6  
tR  
tF  
38  
33  
45  
40  
60  
60  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
ns Figure 4-1, CL = 10,000 pF  
Fall Time  
Propagation Delay Time  
Propagation Delay Time  
Power Supply  
tD1  
tD2  
50.4  
53  
Power Supply Current  
IS  
200  
50  
500  
150  
18  
µA VIN = 3V  
µA VIN = 0V  
V
Operating Input Voltage  
VDD  
4.5  
Note 1: Switching times ensured by design.  
TEMPERATURE CHARACTERISTICS  
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V.  
Parameters  
Temperature Ranges  
Sym  
Min  
Typ  
Max  
Units  
Conditions  
Specified Temperature Range (V)  
Maximum Junction Temperature  
Storage Temperature Range  
TA  
TJ  
TA  
–40  
+125  
+150  
+150  
°C  
°C  
°C  
–65  
Package Thermal Resistances  
Thermal Resistance, 5L-TO-220  
Thermal Resistance, 8L-6x5 DFN  
θJA  
θJA  
71  
°C/W Without heat sink  
33.2  
°C/W Typical 4-layer board with  
vias to ground plane  
Thermal Resistance, 8L-PDIP  
Thermal Resistance, 8L-SOIC  
θJA  
θJA  
125  
155  
°C/W  
°C/W  
DS21946A-page 4  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
2.0  
TYPICAL PERFORMANCE CURVES  
Note:  
The graphs and tables provided following this note are a statistical summary based on a limited number of  
samples and are provided for informational purposes only. The performance characteristics listed herein  
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified  
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.  
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.  
300  
180  
160  
140  
120  
100  
80  
250  
200  
150  
100  
50  
5V  
22,000 pF  
10V  
10,000 pF  
60  
15V  
40  
1,000 pF  
6
100 pF  
20  
0
0
4
8
10  
12  
14  
16  
18  
100  
1000  
10000  
100000  
Supply Voltage (V)  
Capacitive Load (pF)  
FIGURE 2-1:  
Rise Time vs. Supply  
FIGURE 2-4:  
Fall Time vs. Capacitive  
Voltage.  
Load.  
55  
300  
250  
200  
150  
100  
50  
VDD = 15V  
50  
45  
40  
35  
30  
25  
20  
5V  
10V  
tRISE  
tFALL  
15V  
0
100  
1000  
10000  
100000  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (°C)  
Capacitive Load (pF)  
FIGURE 2-2:  
Rise Time vs. Capacitive  
FIGURE 2-5:  
Rise and Fall Times vs.  
Load.  
Temperature.  
-7  
180  
160  
140  
120  
100  
80  
1
10  
22,000 pF  
-8  
1
10  
60  
10,000 pF  
1,000 pF  
40  
100 pF  
20  
0
-9  
1
10  
4
6
8
10  
12  
14  
16  
18  
4
6
8
10  
12  
14  
16  
18  
Supply Voltage (V)  
Supply Voltage (V)  
FIGURE 2-3:  
Fall Time vs. Supply  
FIGURE 2-6:  
Crossover Energy vs Supply  
Voltage.  
Voltage.  
© 2005 Microchip Technology Inc.  
DS21946A-page 5  
TC4421A/TC4422A  
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.  
140  
120  
100  
80  
80  
75  
70  
65  
60  
55  
CLOAD = 10,000 pF  
INPUT = High  
50  
45  
40  
35  
30  
tD2  
tD1  
60  
INPUT = Low  
40  
20  
4
6
8
10  
12  
14  
16  
18  
4
6
8
10  
12  
14  
16  
18  
Supply Voltage (V)  
Supply Voltage (V)  
FIGURE 2-7:  
Propagation Delay vs.  
FIGURE 2-10:  
Quiescent Supply Current  
Supply Voltage.  
vs. Supply Voltage.  
75  
70  
65  
60  
55  
50  
220  
VDD = 18V  
200  
VDD = 12V  
180  
160  
INPUT = High  
140  
120  
100  
80  
60  
40  
tD2  
INPUT = Low  
tD1  
45  
40  
20  
2
3
4
5
6
7
8
9
10  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (°C)  
Input Amplitude (V)  
FIGURE 2-8:  
Propagation Delay vs. Input  
FIGURE 2-11:  
Quiescent Supply Current  
Amplitude.  
vs. Temperature.  
60  
2.0  
VDD = 12V  
1.9  
VDD = 12V  
IN = 5V  
LOAD = 10,000 pF  
V
C
55  
50  
45  
40  
35  
30  
1.8  
1.7  
1.6  
VIH  
tD2  
1.5  
tD1  
1.4  
1.3  
1.2  
VIL  
1.1  
1.0  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (°C)  
-40 -25 -10  
5
20 35 50 65 80 95 110 125  
Temperature (°C)  
FIGURE 2-9:  
Propagation Delay vs.  
FIGURE 2-12:  
Input Threshold vs.  
Temperature.  
Temperature.  
DS21946A-page 6  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.  
2.0  
180  
VDD = 18V  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
160  
200 kHz  
140  
2 MHz  
120  
1 MHz  
VIH  
100  
100 kHz  
50 kHz  
80  
60  
40  
20  
0
VIL  
10 kHz  
4
6
8
10  
12  
14  
16  
18  
100  
1,000  
10,000  
100,000  
Supply Voltage (V)  
Capacitive Load (pF)  
FIGURE 2-13:  
Input Threshold vs. Supply  
FIGURE 2-16:  
Supply Current vs.  
Voltage.  
Capactive Load (VDD = 18V).  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
200  
VIN = 5V (TC4422A)  
VIN = 0V (TC4421A)  
VDD = 12V  
180  
160  
140  
200 kHz  
TJ = 150°C  
120  
2 MHz  
1 MHz  
100  
100 kHz  
50 kHz  
80  
TJ = 25°C  
1.5  
1.0  
0.5  
0.0  
60  
40  
20  
0
10 kHz  
100  
1,000  
10,000  
100,000  
4
6
8
10  
12  
14  
16  
18  
Capacitive Load (pF)  
Supply Voltage (V)  
FIGURE 2-14:  
High-State Output  
FIGURE 2-17:  
Supply Current vs.  
Resistance vs. Supply Voltage.  
Capactive Load (VDD = 12V).  
3.5  
3.0  
220  
VDD = 6V  
VIN = 0V (TC4422A)  
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
0
VIN = 5V (TC4421A)  
1 MHz  
2.5  
TJ = 150°C  
2 MHz  
200 kHz  
2.0  
1.5  
100 kHz  
50 kHz  
TJ = 25°C  
1.0  
0.5  
0.0  
10 kHz  
100  
1,000  
10,000  
100,000  
4
6
8
10  
12  
14  
16  
18  
Supply Voltage (V)  
Capacitive Load (pF)  
FIGURE 2-15:  
Low-State Output  
FIGURE 2-18:  
Supply Current vs.  
Resistance vs. Supply Voltage.  
Capactive Load (VDD = 6V).  
© 2005 Microchip Technology Inc.  
DS21946A-page 7  
TC4421A/TC4422A  
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.  
180  
160  
140  
120  
100  
80  
220  
VDD = 18V  
47,000 pF  
VDD = 6V  
200  
180  
160  
140  
120  
100  
80  
60  
40  
20  
10,000 pF  
22,000 pF  
22,000 pF  
47,000 pF  
0.1 µF  
1000 pF  
10,000 pF  
0.1 µF  
60  
40  
1000 pF  
470 pF  
470 pF  
20  
0
0
10  
100  
1000  
10000  
10  
100  
1000  
10000  
Frequency (kHz)  
Frequency (kHz)  
FIGURE 2-19:  
Supply Current vs.  
FIGURE 2-21:  
Supply Current vs.  
Frequency (VDD = 18V).  
Frequency (VDD = 6V).  
200  
VDD = 12V  
180  
10,000 pF  
160  
47,000 pF  
140  
120  
22,000 pF  
1000 pF  
100  
0.1 µF  
80  
60  
40  
20  
0
470 pF  
10  
100  
1000  
10000  
Frequency (kHz)  
FIGURE 2-20:  
Supply Current vs.  
Frequency (VDD = 12V).  
DS21946A-page 8  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
3.0  
PIN DESCRIPTIONS  
The descriptions of the pins are listed in Table 3-1.  
TABLE 3-1:  
PIN FUNCTION TABLE  
Pin No.  
8-Pin PDIP,  
SOIC  
Pin No.  
5-Pin TO-220  
Pin No.  
8-Pin DFN  
Symbol  
Description  
1
2
1
2
1
VDD  
INPUT  
NC  
Supply input, 4.5V to 18V  
Control input, TTL/CMOS-compatible input  
No connection  
3
3
2
4
4
GND  
Ground  
5
5
4
GND  
Ground  
6
6
5
OUTPUT  
OUTPUT  
VDD  
CMOS push-pull output  
CMOS push-pull output  
Supply input, 4.5V to 18V  
Exposed metal pad  
7
7
3
8
8
PAD  
TAB  
NC  
VDD  
Metal tab is at the VDD potential  
3.1  
Supply Input (V  
)
3.3  
CMOS Push-Pull Output  
DD  
The VDD input is the bias supply for the MOSFET driver  
and is rated for 4.5V to 18V with respect to the ground  
pin. The VDD input should be bypassed to ground with  
a local ceramic capacitor. The value of the capacitor  
should be chosen based on the capacitive load that is  
being driven. A minimum value of 1.0 µF is suggested.  
The MOSFET driver output is a low-impedance,  
CMOS, push-pull style output capable of driving a  
capacitive load with 9.0A peak currents. The MOSFET  
driver output is capable of withstanding 1.5A peak  
reverse currents of either polarity.  
3.4  
Ground  
3.2  
Control Input  
The ground pins are the return path for the bias current  
and for the high peak currents that discharge the load  
capacitor. The ground pins should be tied into a ground  
plane or have very short traces to the bias supply  
source return.  
The MOSFET driver input is a high-impedance,  
TTL/CMOS-compatible input. The input also has  
300 mV of hysteresis between the high and low  
thresholds that prevents output glitching even when the  
rise and fall time of the input signal is very slow.  
3.5  
Exposed Metal Pad  
The exposed metal pad of the 6x5 DFN package is not  
internally connected to any potential. Therefore, this  
pad can be connected to a ground plane or other  
copper plane on a Printed Circuit Board (PCB) to aid in  
heat removal from the package.  
3.6  
Metal Tab  
The metal tab of the TO-220 package is connected to  
the VDD potential of the device. This connection to VDD  
can be used as a current carrying path for the device.  
© 2005 Microchip Technology Inc.  
DS21946A-page 9  
TC4421A/TC4422A  
4.0  
APPLICATIONS INFORMATION  
+5V  
90%  
Input  
V
DD = 18V  
10%  
0V  
+18V  
Output  
0V  
tD1  
90%  
tD2  
tF  
tR  
0.1 µF  
4.7 µF  
90%  
0.1 µF  
1
8
VDD  
VDD  
10%  
10%  
Inverting Driver  
TC4421A  
2
6
Output  
Output  
Input  
Input  
Output  
7
+5V  
CL = 10,000 pF  
90%  
GND  
4
GND  
5
Input  
10%  
0V  
+18V  
90%  
90%  
tD1  
tD2  
tF  
tR  
Output  
0V  
Input: 100 kHz,  
square wave,  
10%  
10%  
tRISE = tFALL 10 nsec  
Non-Inverting Driver  
TC4422A  
Note: Pinout shown is for the DFN, PDIP and SOIC packages.  
FIGURE 4-1:  
Switching Time Test Circuits.  
DS21946A-page 10  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
5.0  
5.1  
PACKAGING INFORMATION  
Package Marking Information  
5-Lead TO-220  
Example:  
XXXXXXXXX  
XXXXXXXXX  
TC4421A  
XXXXXXXXX  
e
3
VAT^
YYWWNNN  
0514256  
8-Lead DFN  
Example:  
XXXXXXX  
XXXXXXX  
XXYYWW  
NNN  
TC4421A  
VMF  
0514  
256  
^
e
3
8-Lead PDIP (300 mil)  
Example:  
TC4421A  
XXXXXXXX  
XXXXXNNN  
e
3
PA ^ 256  
0514  
YYWW  
8-Lead SOIC (150 mil)  
Example:  
TC4421A  
XXXXXXXX  
XXXXYYWW  
SN  
e
3
0514  
NNN  
256  
Legend: XX...X Customer-specific information  
Y
YY  
Year code (last digit of calendar year)  
Year code (last 2 digits of calendar year)  
WW  
NNN  
Week code (week of January 1 is week ‘01’)  
Alphanumeric traceability code  
e
3
Pb-free JEDEC designator for Matte Tin (Sn)  
*
This package is Pb-free. The Pb-free JEDEC designator (  
can be found on the outer packaging for this package.  
)
e3  
Note: In the event the full Microchip part number cannot be marked on one line, it will  
be carried over to the next line, thus limiting the number of available  
characters for customer-specific information.  
© 2005 Microchip Technology Inc.  
DS21946A-page 11  
TC4421A/TC4422A  
5-Lead Plastic Transistor Outline (AT) (TO-220)  
L
H1  
Q
b
e3  
e1  
E
e
EJECTOR PIN  
ØP  
(5X)  
a
C1  
A
J1  
F
D
Units  
INCHES*  
MIN  
.060  
MILLIMETERS  
MIN MAX  
1.52  
Dimension Limits  
MAX  
.072  
e
Lead Pitch  
1.83  
6.93  
1.02  
4.83  
10.54  
14.99  
6.55  
1.40  
2.87  
3.96  
14.22  
2.92  
0.56  
1.02  
Overall Lead Centers  
Space Between Leads  
Overall Height  
e1  
e3  
A
.263  
.030  
.160  
.385  
.560  
.234  
.045  
.103  
.146  
.540  
.090  
.014  
.025  
.273  
.040  
.190  
.415  
.590  
.258  
.055  
.113  
.156  
.560  
.115  
.022  
.040  
6.68  
0.76  
4.06  
9.78  
14.22  
5.94  
1.14  
2.62  
3.71  
13.72  
2.29  
0.36  
0.64  
Overall Width  
E
Overall Length  
D
Flag Length  
H1  
F
Flag Thickness  
Q
Through Hole Center  
Through Hole Diameter  
Lead Length  
P
L
Base to Bottom of Lead  
Lead Thickness  
Lead Width  
J1  
C1  
b
a
Mold Draft Angle  
3°  
7°  
3°  
7°  
*Controlling Parameter  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or  
protrusions shall not exceed .010" (0.254mm) per side.  
JEDEC equivalent: TO-220  
Drawing No. C04-036  
DS21946A-page 12  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 mm Body (DFN-S) – Saw Singulated  
© 2005 Microchip Technology Inc.  
DS21946A-page 13  
TC4421A/TC4422A  
8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)  
E1  
D
2
n
1
α
E
A2  
A
L
c
A1  
β
B1  
B
p
eB  
Units  
INCHES*  
NOM  
MILLIMETERS  
Dimension Limits  
MIN  
MAX  
MIN  
NOM  
8
MAX  
n
p
Number of Pins  
Pitch  
8
.100  
.155  
.130  
2.54  
Top to Seating Plane  
A
.140  
.170  
3.56  
2.92  
3.94  
3.30  
4.32  
Molded Package Thickness  
Base to Seating Plane  
Shoulder to Shoulder Width  
Molded Package Width  
Overall Length  
A2  
A1  
E
.115  
.015  
.300  
.240  
.360  
.125  
.008  
.045  
.014  
.310  
5
.145  
3.68  
0.38  
7.62  
6.10  
9.14  
3.18  
0.20  
1.14  
0.36  
7.87  
5
.313  
.250  
.373  
.130  
.012  
.058  
.018  
.370  
10  
.325  
.260  
.385  
.135  
.015  
.070  
.022  
.430  
15  
7.94  
6.35  
9.46  
3.30  
0.29  
1.46  
0.46  
9.40  
10  
8.26  
6.60  
9.78  
3.43  
0.38  
1.78  
0.56  
10.92  
15  
E1  
D
Tip to Seating Plane  
Lead Thickness  
L
c
Upper Lead Width  
B1  
B
Lower Lead Width  
Overall Row Spacing  
Mold Draft Angle Top  
Mold Draft Angle Bottom  
§
eB  
α
β
5
10  
15  
5
10  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-001  
Drawing No. C04-018  
DS21946A-page 14  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)  
E
E1  
p
D
2
1
B
n
h
α
45°  
c
A2  
A
φ
β
L
A1  
Units  
INCHES*  
MILLIMETERS  
Dimension Limits  
MIN  
NOM  
8
MAX  
MIN  
NOM  
8
MAX  
n
p
Number of Pins  
Pitch  
.050  
1.27  
Overall Height  
A
.053  
.061  
.056  
.007  
.237  
.154  
.193  
.015  
.025  
4
.069  
1.35  
1.32  
1.55  
1.42  
0.18  
6.02  
3.91  
4.90  
0.38  
0.62  
4
1.75  
Molded Package Thickness  
Standoff  
A2  
A1  
E
.052  
.004  
.228  
.146  
.189  
.010  
.019  
0
.061  
.010  
.244  
.157  
.197  
.020  
.030  
8
1.55  
0.25  
6.20  
3.99  
5.00  
0.51  
0.76  
8
§
0.10  
5.79  
3.71  
4.80  
0.25  
0.48  
0
Overall Width  
Molded Package Width  
Overall Length  
E1  
D
Chamfer Distance  
Foot Length  
h
L
φ
Foot Angle  
c
Lead Thickness  
Lead Width  
.008  
.013  
0
.009  
.017  
12  
.010  
.020  
15  
0.20  
0.33  
0
0.23  
0.42  
12  
0.25  
0.51  
15  
B
α
β
Mold Draft Angle Top  
Mold Draft Angle Bottom  
0
12  
15  
0
12  
15  
* Controlling Parameter  
§ Significant Characteristic  
Notes:  
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed  
.010” (0.254mm) per side.  
JEDEC Equivalent: MS-012  
Drawing No. C04-057  
© 2005 Microchip Technology Inc.  
DS21946A-page 15  
TC4421A/TC4422A  
NOTES:  
DS21946A-page 16  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
APPENDIX A: REVISION HISTORY  
Revision A (May 2005)  
• Original Release of this Document.  
© 2005 Microchip Technology Inc.  
DS21946A-page 17  
TC4421A/TC4422A  
NOTES:  
DS21946A-page 18  
© 2005 Microchip Technology Inc.  
TC4421A/TC4422A  
PRODUCT IDENTIFICATION SYSTEM  
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.  
Examples:  
PART NO.  
Device  
X
XX  
XXX  
a)  
b)  
c)  
TC4421AVAT: 9A High-Speed Inverting  
Temperature Package Tape & Reel  
Range  
MOSFET Driver,  
TO-220 package,  
-40°C to +125°C.  
TC4421AVOA: 9A High-Speed Inverting  
MOSFET Driver,  
Device:  
TC4421A: 9A High-Speed MOSFET Driver, Inverting  
TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting  
SOIC package,  
-40°C to +125°C.  
Temperature Range:  
Package: *  
V
=
-40°C to +125°C  
TC4421AVMF: 9A High-Speed Inverting  
MOSFET Driver,  
DFN package,  
-40°C to +125°C.  
AT  
MF  
=
=
TO-220, 5-lead  
Dual, Flat, No-Lead (6x5 mm Body), 8-lead  
MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead  
(Tape and Reel)  
a)  
b)  
TC4422AVPA: 9A High-Speed  
Non-Inverting MOSFET  
Driver, PDIP package,  
-40°C to +125°C.  
PA  
OA  
=
=
Plastic DIP (300 mil Body), 8-lead  
Plastic SOIC (150 mil Body), 8-lead  
OA713 = Plastic SOIC (150 mil Body), 8-lead  
(Tape and Reel)  
TC4422AVOA: 9A High-Speed  
Non-Inverting  
*All package offerings are Pb Free (Lead Free).  
MOSFET Driver,  
SOIC package,  
-40°C to +125°C.  
c)  
TC4422AVMF: 9A High-Speed  
Non-Inverting MOSFET  
Driver, DFN package,  
-40°C to +125°C.  
© 2005 Microchip Technology Inc.  
DS21946A-page 19  
TC4421A/TC4422A  
NOTES:  
DS21946A-page 20  
© 2005 Microchip Technology Inc.  
Note the following details of the code protection feature on Microchip devices:  
Microchip products meet the specification contained in their particular Microchip Data Sheet.  
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the  
intended manner and under normal conditions.  
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our  
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data  
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.  
Microchip is willing to work with the customer who is concerned about the integrity of their code.  
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not  
mean that we are guaranteeing the product as “unbreakable.”  
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our  
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts  
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.  
Information contained in this publication regarding device  
applications and the like is provided only for your convenience  
and may be superseded by updates. It is your responsibility to  
ensure that your application meets with your specifications.  
MICROCHIP MAKES NO REPRESENTATIONS OR WAR-  
RANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,  
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,  
RELATED TO THE INFORMATION, INCLUDING BUT NOT  
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,  
MERCHANTABILITY OR FITNESS FOR PURPOSE.  
Microchip disclaims all liability arising from this information and  
its use. Use of Microchip’s products as critical components in  
life support systems is not authorized except with express  
written approval by Microchip. No licenses are conveyed,  
implicitly or otherwise, under any Microchip intellectual property  
rights.  
Trademarks  
The Microchip name and logo, the Microchip logo, Accuron,  
dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,  
PICSTART, PRO MATE, PowerSmart, rfPIC, and  
SmartShunt are registered trademarks of Microchip  
Technology Incorporated in the U.S.A. and other countries.  
AmpLab, FilterLab, Migratable Memory, MXDEV, MXLAB,  
PICMASTER, SEEVAL, SmartSensor and The Embedded  
Control Solutions Company are registered trademarks of  
Microchip Technology Incorporated in the U.S.A.  
Analog-for-the-Digital Age, Application Maestro, dsPICDEM,  
dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,  
FanSense, FlexROM, fuzzyLAB, In-Circuit Serial  
Programming, ICSP, ICEPIC, Linear Active Thermistor,  
MPASM, MPLIB, MPLINK, MPSIM, PICkit, PICDEM,  
PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,  
PowerMate, PowerTool, rfLAB, rfPICDEM, Select Mode,  
Smart Serial, SmartTel, Total Endurance and WiperLock are  
trademarks of Microchip Technology Incorporated in the  
U.S.A. and other countries.  
SQTP is a service mark of Microchip Technology Incorporated  
in the U.S.A.  
All other trademarks mentioned herein are property of their  
respective companies.  
© 2005, Microchip Technology Incorporated, Printed in the  
U.S.A., All Rights Reserved.  
Printed on recycled paper.  
Microchip received ISO/TS-16949:2002 quality system certification for  
its worldwide headquarters, design and wafer fabrication facilities in  
Chandler and Tempe, Arizona and Mountain View, California in  
October 2003. The Company’s quality system processes and  
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping  
devices, Serial EEPROMs, microperipherals, nonvolatile memory and  
analog products. In addition, Microchip’s quality system for the design  
and manufacture of development systems is ISO 9001:2000 certified.  
© 2005 Microchip Technology Inc.  
DS21946A-page 21  
WORLDWIDE SALES AND SERVICE  
AMERICAS  
ASIA/PACIFIC  
ASIA/PACIFIC  
EUROPE  
Corporate Office  
Australia - Sydney  
Tel: 61-2-9868-6733  
Fax: 61-2-9868-6755  
India - Bangalore  
Tel: 91-80-2229-0061  
Fax: 91-80-2229-0062  
Austria - Weis  
Tel: 43-7242-2244-399  
Fax: 43-7242-2244-393  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 480-792-7200  
Fax: 480-792-7277  
Technical Support:  
http://support.microchip.com  
Web Address:  
www.microchip.com  
China - Beijing  
Tel: 86-10-8528-2100  
Fax: 86-10-8528-2104  
Denmark - Ballerup  
Tel: 45-4450-2828  
Fax: 45-4485-2829  
India - New Delhi  
Tel: 91-11-5160-8631  
Fax: 91-11-5160-8632  
China - Chengdu  
Tel: 86-28-8676-6200  
Fax: 86-28-8676-6599  
France - Massy  
Tel: 33-1-69-53-63-20  
Fax: 33-1-69-30-90-79  
Japan - Kanagawa  
Tel: 81-45-471- 6166  
Fax: 81-45-471-6122  
Atlanta  
China - Fuzhou  
Tel: 86-591-8750-3506  
Fax: 86-591-8750-3521  
Germany - Ismaning  
Tel: 49-89-627-144-0  
Fax: 49-89-627-144-44  
Korea - Seoul  
Alpharetta, GA  
Tel: 770-640-0034  
Fax: 770-640-0307  
Tel: 82-2-554-7200  
Fax: 82-2-558-5932 or  
82-2-558-5934  
Italy - Milan  
Tel: 39-0331-742611  
Fax: 39-0331-466781  
China - Hong Kong SAR  
Tel: 852-2401-1200  
Fax: 852-2401-3431  
Boston  
Malaysia - Penang  
Tel:011-604-646-8870  
Fax:011-604-646-5086  
Westborough, MA  
Tel: 774-760-0087  
Fax: 774-760-0088  
Netherlands - Drunen  
Tel: 31-416-690399  
Fax: 31-416-690340  
China - Shanghai  
Tel: 86-21-5407-5533  
Fax: 86-21-5407-5066  
China - Shenyang  
Tel: 86-24-2334-2829  
Fax: 86-24-2334-2393  
Philippines - Manila  
Tel: 011-632-634-9065  
Fax: 011-632-634-9069  
Chicago  
Itasca, IL  
Tel: 630-285-0071  
Fax: 630-285-0075  
England - Berkshire  
Tel: 44-118-921-5869  
Fax: 44-118-921-5820  
Singapore  
Tel: 65-6334-8870  
Fax: 65-6334-8850  
Dallas  
Addison, TX  
China - Shenzhen  
Tel: 86-755-8203-2660  
Fax: 86-755-8203-1760  
Tel: 972-818-7423  
Fax: 972-818-2924  
Taiwan - Kaohsiung  
Tel: 886-7-536-4818  
Fax: 886-7-536-4803  
China - Shunde  
Detroit  
Tel: 86-757-2839-5507  
Fax: 86-757-2839-5571  
Farmington Hills, MI  
Tel: 248-538-2250  
Fax: 248-538-2260  
Taiwan - Taipei  
Tel: 886-2-2500-6610  
Fax: 886-2-2508-0102  
China - Qingdao  
Tel: 86-532-502-7355  
Fax: 86-532-502-7205  
Kokomo  
Kokomo, IN  
Tel: 765-864-8360  
Fax: 765-864-8387  
Taiwan - Hsinchu  
Tel: 886-3-572-9526  
Fax: 886-3-572-6459  
Los Angeles  
Mission Viejo, CA  
Tel: 949-462-9523  
Fax: 949-462-9608  
San Jose  
Mountain View, CA  
Tel: 650-215-1444  
Fax: 650-961-0286  
Toronto  
Mississauga, Ontario,  
Canada  
Tel: 905-673-0699  
Fax: 905-673-6509  
04/20/05  
DS21946A-page 22  
© 2005 Microchip Technology Inc.  

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