MCP1700-1502E_技术文档

MCP1700

Low Quiescent Current LDO

Features

General Description

• 1.6 µA Typical Quiescent Current

The MCP1700 is a family of CMOS low dropout (LDO)

voltage regulators that can deliver up to 250 mA of

current while consuming only 1.6 µA of quiescent

current (typical). The input operating range is specified

from 2.3V to 6.0V, making it an ideal choice for two and

three primary cell battery-powered applications, as well

as single cell Li-Ion-powered applications.

• Input Operating Voltage Range: 2.3V to 6.0V

• Output Voltage Range: 1.2V to 5.0V

• 250 mA Output Current for output voltages ≥ 2.5V

• 200 mA Output Current for output voltages < 2.5V

• Low Dropout (LDO) voltage

- 178 mV typical @ 250 mA for V_OUT= 2.8V

• 0.4% Typical Output Voltage Tolerance

• Standard Output Voltage Options:

The MCP1700 is capable of delivering 250 mA with

only 178 mV of input to output voltage differential

(V_OUT= 2.8V). The output voltage tolerance of the

MCP1700 is typically ±0.4% at +25°C and ±3%

maximum over the operating junction temperature

range of -40°C to +125°C.

- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V

• Stable with 1.0 µF Ceramic Output capacitor

• Short Circuit Protection

Output voltages available for the MCP1700 range from

1.2V to 5.0V. The LDO output is stable when using only

1 µF output capacitance. Ceramic, tantalum or

aluminum electrolytic capacitors can all be used for

input and output. Overcurrent limit and overtemperature

shutdown provide a robust solution for any application.

• Overtemperature Protection

Applications

• Battery-powered Devices

• Battery-powered Alarm Circuits

• Smoke Detectors

Package options include the SOT-23, SOT-89 and

TO-92.

• CO²Detectors

• Pagers and Cellular Phones

• Smart Battery Packs

• Low Quiescent Current Voltage Reference

• PDAs

Package Types

3-Pin SOT-23

3-Pin SOT-89

3-Pin TO-92

V_IN

3

V_IN

• Digital Cameras

MCP1700

• Microcontroller Power

1

2 3

MCP1700

Related Literature

2

1

3

1

2

GNDV_INV_OUT

• AN765, “Using Microchip’s Micropower LDOs”,

DS00765, Microchip Technology Inc., 2002

GND V_OUT

GND V_INV_OUT

• AN766, “Pin-Compatible CMOS Upgrades to

BiPolar LDOs”, DS00766,

Microchip Technology Inc., 2002

• AN792, “A Method to Determine How Much

Power a SOT23 Can Dissipate in an Application”,

DS00792, Microchip Technology Inc., 2001

DS21826B-page 1

MCP1700

Functional Block Diagrams

MCP1700

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Over Current

Over Temperature

GND

Typical Application Circuits

MCP1700

V_IN

GND

(2.3V to 3.2V)

V_OUT

1.8V

V_IN

C_IN

V_OUT

1 µF Ceramic

I_OUT

150 mA

C_OUT

1 µF Ceramic

DS21826B-page 2

MCP1700

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied.

Exposure to maximum rating conditions for extended periods

may affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

V

............................................................................................+6.5V

DD

All inputs and outputs w.r.t. .............(V_SS-0.3V) to (V_IN+0.3V)

Peak Output Current....................................Internally Limited

Storage temperature .....................................-65°C to +150°C

Maximum Junction Temperature................................... 150°C

Operating Junction Temperature...................-40°C to +125°C

ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise specified, all limits are established for V_IN= V_R+ 1, I_LOAD= 100 µA,

_OUT= 1 µF (X7R), C_IN= 1 µF (X7R), T_A= +25°C.

Boldface type applies for junction temperatures, T_J(Note 6) of -40°C to +125°C.

C

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input / Output Characteristics

Input Operating Voltage

V_IN

I_q

2.3

—

6.0

4

V

Note 1

Input Quiescent Current

Maximum Output Current

—

1.6

µA

mA

I_L= 0 mA, V_IN= V_R+1V

I_{OUT_mA}

250

200

—

For V_R≥ 2.5V

For V_R< 2.5V

Output Short Circuit Current

Output Voltage Regulation

I_{OUT_SC}

—

408

—

mA

V

V_IN= V_R+ V, V_OUT= GND,

Current (peak current) measured

10 ms after short is applied.

V_OUT

V_R-3.0% V_R±0.4 V_R+3.0%

Note 2

V_R-2.0%

%

V_R+2.0%

V_OUTTemperature Coefficient

Line Regulation

TCV_OUT

—

50

—

ppm/°C

%/V

Note 3

ΔV_OUT

/

-1.0

±0.75

+1.0

(V_R+1)V ≤ V_IN≤ 6V

(V_OUTXΔV_IN

)

Load Regulation

ΔV_OUT/V_OUT

-1.5

±1.0

+1.5

%

I_L= 0.1 mA to 250 mA for V_R≥ 2.5V

I_L= 0.1 mA to 200 mA for V_R< 2.5V

Note 4

Dropout Voltage

V_R> 2.5V

V_IN-V_OUT

T_R

—

178

150

500

3

350

—

mV

µs

I_L= 250 mA, (Note 1, Note 5)

Dropout Voltage

V_R< 2.5V

I_L= 200 mA, (Note 1, Note 5)

Output Rise Time

10% V_Rto 90% V_RV_IN= 0V to 6V,

R_L= 50Ω resistive

Output Noise

e_N

—

µV/(Hz)^1/2I_L= 100 mA, f = 1 kHz, C_OUT= 1 µF

Note 1: The minimum V_INmust meet two conditions: V_IN≥ 2.3V and V_IN≥ (V_R+ 3.0%) +V_DROPOUT

.

2: _Ris the nominal regulator output voltage. For example: V_R= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

V

input voltage (V_IN= V_R+ 1.0V); I_OUT= 100 µA.

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V_R+ 1V differential applied.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

DS21826B-page 3

MCP1700

DC CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise specified, all limits are established for V_IN= V_R+ 1, I_LOAD= 100 µA,

C_OUT= 1 µF (X7R), C_IN= 1 µF (X7R), T_A= +25°C.

Boldface type applies for junction temperatures, T_J(Note 6) of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Power Supply Ripple

Rejection Ratio

PSRR

—

44

—

dB

f = 100 Hz, C_OUT= 1 µF, I_L= 50 mA,

V

_INAC= 100 mV pk-pk, C_IN= 0 µF,

_R= 1.2V

Thermal Shutdown Protection

T_SD

—

140

—

°C

V_IN= V_R+ 1, I_L= 100 µA

Note 1: The minimum V_INmust meet two conditions: V_IN≥ 2.3V and V_IN≥ (V_R+ 3.0%) +V_DROPOUT

.

2: _Ris the nominal regulator output voltage. For example: V_R= 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The

V

input voltage (V_IN= V_R+ 1.0V); I_OUT= 100 µA.

3: TCV_OUT= (V_OUT-HIGH- V_OUT-LOW) *10⁶/ (V_R* ΔTemperature), V_OUT-HIGH= highest voltage measured over the

temperature range. V_OUT-LOW= lowest voltage measured over the temperature range.

4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output

voltage due to heating effects are determined using thermal regulation specification TCV_OUT

.

5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured

value with a V_R+ 1V differential applied.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the

desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the

ambient temperature is not significant.

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, all limits are established for V_IN= V_R+ 1, I_LOAD= 100 µA,

C_OUT= 1 µF (X7R), C_IN= 1 µF (X7R), T_A= +25°C.

Boldface type applies for junction temperatures, T_J(Note 1) of -40°C to +125°C.

Parameters

Temperature Ranges

Sym

Min

Typ

Max

Units

Conditions

Specified Temperature Range

Operating Temperature Range

Storage Temperature Range

Thermal Package Resistance

Thermal Resistance, SOT-23

T_A

-40

-65

+125

+150

°C

Minimum Trace Width Single Layer

Board

θ_JA

—

336

—

°C/W

—

230

52

—

°C/W Typical FR4 4-layer Application

°C/W Typical, 1 square inch of copper

Thermal Resistance, SOT-89

Thermal Resistance, TO-92

θ_JA

EIA/JEDEC JESD51-751-7

—

131.9

—

°C/W

4-Layer Board

Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction to air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power

dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained

junction temperatures above 150°C can impact the device reliability.

DS21826B-page 4

MCP1700

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+ V.

Note: Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction

J

temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

3.0

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

1.206

1.204

1.202

1.200

1.198

1.196

1.194

1.192

1.190

V_R= 1.2V

_OUT= 0 µA

V_R= 1.2V

I_OUT= 0.1 mA

T_J= +125°C

T_J= +25°C

I

T_J= +125°C

T_J= - 40°C

T_J= +25°C

T_J= - 40°C

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

2

2.5

3

3.5

4

4.5

5

5.5

6

Input Voltage (V)

FIGURE 2-1:

Input Voltage.

Input Quiescent Current vs.

FIGURE 2-4:

Voltage (V = 1.2V).

Output Voltage vs. Input

R

1.8

50

V_R= 1.8V

V_R= 2.8V

T_J= +125°C

45

I

_OUT= 0.1 mA

1.795

40

35

30

25

20

15

10

5

T_J= +25°C

1.79

T_J= - 40°C

T_J= +125°C

1.785

1.78

T_J= +25°C

1.775

1.77

0

25

50

75

100 125 150 175 200 225 250

Load Current (mA)

2

2.5

3

3.5

4

4.5

5

5.5

Input Voltage (V)

FIGURE 2-2:

Current.

Ground Current vs. Load

FIGURE 2-5:

Voltage (V = 1.8V).

Output Voltage vs. Input

R

2.50

2.25

2.00

1.75

1.50

1.25

2.800

2.798

2.796

2.794

2.792

2.790

V_IN= V_R+ 1V

I

V_R= 2.8V

I_OUT= 0.1 mA

_OUT= 0 µA

T_J= +25°C

V_R= 5.0V

T_J= - 40°C

V_R= 1.2V

2.788

2.786

2.784

2.782

2.780

2.778

V_R= 2.8V

T_J= +125°C

-40 -25 -10

5

20 35 50 65 80 95 110 125

3.3

3.6

3.9

4.2

4.5

4.8

5.1

5.4

5.7

Junction Temperature (°C)

Input Voltage (V)

FIGURE 2-3:

Quiescent Current vs.

FIGURE 2-6:

Output Voltage vs. Input

Junction Temperature.

Voltage (V = 2.8V).

R

DS21826B-page 5

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+1V.

T_J= +25°C

5.000

4.995

4.990

4.985

4.980

4.975

4.970

4.965

4.960

4.955

2.798

2.796

2.794

2.792

2.790

2.788

2.786

2.784

2.782

2.780

2.778

T_J= +25°C

T_J= - 40°C

V_R= 5.0V

_OUT= 0.1 mA

I

V_R= 2.8V

_IN= V_R+ 1V

V

T_J= - 40°C

T_J= +125°C

5

5.2

5.4

5.6

5.8

6

0

50

100

150

200

250

Input Voltage (V)

Load Current (mA)

FIGURE 2-7:

Output Voltage vs. Input

FIGURE 2-10:

Output Voltage vs. Load

Voltage (V = 5.0V).

Current (V = 2.8V).

R

1.21

1.20

1.19

1.18

1.17

1.16

1.15

5.000

T_J= - 40°C

T_J= +25°C

T_J= +125°C

V_R= 1.2V

V_IN= V_R+ 1V

T_J= +25°C

4.995

4.990

4.985

4.980

4.975

4.970

4.965

4.960

4.955

T_J= - 40°C

V_R= 5.0V

V_IN= V_R+ 1V

T_J= +125°C

0

25

50

75

100

125

150

175

200

0

50

100

150

200

250

Load Curent (mA)

Load Current (mA)

FIGURE 2-8:

Output Voltage vs. Load

FIGURE 2-11:

Output Voltage vs. Load

Current (V = 1.2V).

Current (V = 5.0V).

R

0.25

1.792

1.790

V_R= 2.8V

0.2

0.15

0.1

T_J= +125°C

T_J= +25°C

1.788

1.786

1.784

1.782

T_J= - 40°C

T_J= +125°C

T_J= - 40°C

0.05

0

V_R= 1.8V

1.780

V_IN= V_R+ 1V

1.778

0

25

50

75

100

125

150

175

200

0

25

50

75

100

125

150

175

200

225

250

Load Current (mA)

FIGURE 2-9:

Output Voltage vs. Load

FIGURE 2-12:

Current (V = 2.8V).

Dropout Voltage vs. Load

Current (V = 1.8V).

R

DS21826B-page 6

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+1V.

0.16

0.14

0.12

0.1

10

1

V_IN= 3.8V

_R= 2.8V

_OUT= 50ma

V_R= 5.0V

V

I

T_J= +125°C

V_IN= 2.5V

_R= 1.2V

_OUT= 50ma

V_IN= 2.8V

_R= 1.8V

_OUT= 50ma

T_J= +25°C

V

I

V

I

0.08

0.06

0.04

0.02

0

0.1

0.01

T_J= - 40°C

0.01

0.1

1

10

100

1000

0

25

50

75

100

125

150

175

200

225

250

Load Current (mA)

Frequency (KHz)

FIGURE 2-13:

Dropout Voltage vs. Load

FIGURE 2-16:

Noise vs. Frequency.

Dynamic Load Step

Current (V = 5.0V).

R

FIGURE 2-17:

FIGURE 2-14:

Rejection vs. Frequency (V = 1.2V).

Power Supply Ripple

(V = 1.2V).

R

FIGURE 2-18:

FIGURE 2-15:

Power Supply Ripple

(V = 1.8V).

Rejection vs. Frequency (V = 2.8V).

R

DS21826B-page 7

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+1V.

FIGURE 2-19:

Dynamic Load Step

FIGURE 2-22:

Dynamic Load Step

(V = 2.8V).

(V = 5.0V).

R

FIGURE 2-20:

FIGURE 2-23:

Dynamic Line Step

(V = 1.8V).

(V = 2.8V).

R

FIGURE 2-21:

FIGURE 2-24:

Startup From V

IN

(V = 2.8V).

(V = 1.2V).

R

DS21826B-page 8

MCP1700

Note: Unless otherwise indicated: V_R= 1.8V, C_OUT= 1 µF Ceramic (X7R), C_IN= 1 µF Ceramic (X7R), I_L= 100 µA,

T_A= +25°C, V_IN= V_R+1V.

0

V_R= 2.8V

V

_IN= 5.0V

-0.1

-0.2

-0.3

-0.4

-0.5

-0.6

-0.7

I_OUT= 0 to 250 mA

V_IN= 4.3V

V_IN= 3.3V

-40 -25 -10

5

20

35

50

65

80

95 110 125

Junction Temperature (°C)

FIGURE 2-25:

Start-up From V

FIGURE 2-28:

Load Regulation vs.

IN

(V = 1.8V).

Junction Temperature (V = 2.8V).

R

0.1

V_R= 5.0V

_OUT= 0 to 250 mA

I

0.05

0

V_IN= 6.0V

-0.05

-0.1

-0.15

-0.2

V_IN= 5.5V

-40 -25 -10

5

20

35

50

65 80 95 110 125

Junction Temperature (°C)

FIGURE 2-26:

Start-up From V

FIGURE 2-29:

Load Regulation vs.

IN

(V = 2.8V).

Junction Temperature (V = 5.0V).

R

0.1

0.3

V_R= 1.8V

0.05

I_OUT= 0 to 200 mA

0.2

0.1

0

V_IN= 5.0V

0

V_R= 2.8V

V_IN= 3.5V

-0.05

-0.1

V_R= 1.8V

-0.1

-0.2

-0.3

-0.4

-0.15

-0.2

V_IN= 2.2V

V_R= 1.2V

-0.25

-0.3

-40 -25 -10

5

20

35

50

65

80

95 110 125

-40 -25 -10

5

20 35 50 65 80 95 110 125

Junction Temperature (°C)

FIGURE 2-27:

Load Regulation vs.

FIGURE 2-30:

Line Regulation vs.

Junction Temperature (V = 1.8V).

Temperature (V = 1.2V, 1.8V, 2.8V).

R

DS21826B-page 9

MCP1700

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

Pin No.

SOT-23

Pin No.

SOT-89

Pin No.

TO-92

Name

Function

1

2

3

1

3

2

1

3

2

GND

V_OUT

V_IN

Ground Terminal

Regulated Voltage Output

Unregulated Supply Voltage

3.1

Ground Terminal (GND)

3.3

Unregulated Input Voltage Pin

(V_IN)

Regulator ground. Tie GND to the negative side of the

output and the negative side of the input capacitor.

Only the LDO bias current (1.6 µA typical) flows out of

this pin; there is no high current. The LDO output

regulation is referenced to this pin. Minimize voltage

drops between this pin and the negative side of the

load.

Connect V_INto the input unregulated source voltage.

Like all low dropout linear regulators, low source

impedance is necessary for the stable operation of the

LDO. The amount of capacitance required to ensure

low source impedance will depend on the proximity of

the input source capacitors or battery type. For most

applications, 1 µF of capacitance will ensure stable

operation of the LDO circuit. For applications that have

load currents below 100 mA, the input capacitance

requirement can be lowered. The type of capacitor

used can be ceramic, tantalum or aluminum

electrolytic. The low ESR characteristics of the ceramic

will yield better noise and PSRR performance at high

frequency.

3.2

Regulated Output Voltage (V_OUT)

Connect V_OUTto the positive side of the load and the

positive terminal of the output capacitor. The positive

side of the output capacitor should be physically

located as close to the LDO V_OUTpin as is practical.

The current flowing out of this pin is equal to the DC

load current.

DS21826B-page 10

MCP1700

4.0

4.1

DETAILED DESCRIPTION

Output Regulation

4.3

Overtemperature

A portion of the LDO output voltage is fed back to the

internal error amplifier and compared with the precision

internal bandgap reference. The error amplifier output

will adjust the amount of current that flows through the

P-Channel pass transistor, thus regulating the output

voltage to the desired value. Any changes in input

voltage or output current will cause the error amplifier

to respond and adjust the output voltage to the target

voltage (refer to Figure 4-1).

The internal power dissipation within the LDO is a

function of input-to-output voltage differential and load

current. If the power dissipation within the LDO is

excessive, the internal junction temperature will rise

above the typical shutdown threshold of 140°C. At that

point, the LDO will shut down and begin to cool to the

typical turn-on junction temperature of 130°C. If the

power dissipation is low enough, the device will

continue to cool and operate normally. If the power

dissipation remains high, the thermal shutdown

protection circuitry will again turn off the LDO,

protecting it from catastrophic failure.

4.2

Overcurrent

The MCP1700 internal circuitry monitors the amount of

current flowing through the P-Channel pass transistor.

In the event of a short-circuit or excessive output

current, the MCP1700 will turn off the P-Channel

device for a short period, after which the LDO will

attempt to restart. If the excessive current remains, the

cycle will repeat itself.

MCP1700

V_OUT

V_IN

Error Amplifier

+V_IN

Voltage

Reference

-

+

Overcurrent

Overtemperature

GND

FIGURE 4-1:

Block Diagram.

DS21826B-page 11

MCP1700

5.2

Output

5.0

FUNCTIONAL DESCRIPTION

The maximum rated continuous output current for the

MCP1700 is 250 mA (V_R≥ 2.5V). For applications

where V_R< 2.5V, the maximum output current is

200 mA.

The MCP1700 CMOS low dropout linear regulator is

intended for applications that need the lowest current

consumption while maintaining output voltage

regulation. The operating continuous load range of the

MCP1700 is from 0 mA to 250 mA (V_R≥ 2.5V). The

input operating voltage range is from 2.3V to 6.0V,

making it capable of operating from two, three or four

alkaline cells or a single Li-Ion cell battery input.

A minimum output capacitance of 1.0 µF is required for

small signal stability in applications that have up to

250 mA output current capability. The capacitor type

can be ceramic, tantalum or aluminum electrolytic. The

esr range on the output capacitor can range from 0Ω to

2.0Ω.

5.1

Input

The input of the MCP1700 is connected to the source

of the P-Channel PMOS pass transistor. As with all

LDO circuits, a relatively low source impedance (10Ω)

is needed to prevent the input impedance from causing

the LDO to become unstable. The size and type of the

capacitor needed depends heavily on the input source

type (battery, power supply) and the output current

range of the application. For most applications (up to

100 mA), a 1 µF ceramic capacitor will be sufficient to

ensure circuit stability. Larger values can be used to

improve circuit AC performance.

5.3

Output Rise time

When powering up the internal reference output, the

typical output rise time of 500 µs is controlled to

prevent overshoot of the output voltage.

DS21826B-page 12

MCP1700

EQUATION 6-2:

T_J(MAX)= P_TOTAL× Rθ_JA+ T_AMAX

6.0

6.1

APPLICATION CIRCUITS &

ISSUES

T

_J(MAX)= Maximum continuous junction

Typical Application

temperature.

The MCP1700 is most commonly used as a voltage

regulator. It’s low quiescent current and low dropout

voltage make it ideal for many battery-powered

applications.

P_TOTAL= Total device power dissipation.

Rθ_JA= Thermal resistance from junction to ambient.

T_AMAX= Maximum ambient temperature.

MCP1700

The maximum power dissipation capability for a

package can be calculated given the junction-to-

ambient thermal resistance and the maximum ambient

temperature for the application. The following equation

can be used to determine the package maximum

internal power dissipation.

V_IN

GND

(2.3V to 3.2V)

V_OUT

1.8V

V_IN

C_IN

V

OUT

1 µF Ceramic

I_OUT

150 mA

C_OUT

1 µF Ceramic

EQUATION 6-3:

FIGURE 6-1:

Typical Application Circuit.

(T_J(MAX)– T_A(MAX)

)

P_D(MAX)= ---------------------------------------------------

Rθ_JA

6.1.1

APPLICATION INPUT CONDITIONS

Package Type = SOT-23

P_D(MAX)= Maximum device power dissipation.

T_J(MAX)= Maximum continuous junction

temperature.

Input Voltage Range = 2.3V to 3.2V

_INmaximum = 3.2V

_OUTtypical = 1.8V

I_OUT= 150 mA maximum

V

T_A(MAX)= Maximum ambient temperature.

V

Rθ_JA= Thermal resistance from junction to ambient.

6.2

Power Calculations

EQUATION 6-4:

6.2.1

POWER DISSIPATION

T_J(RISE)= P_D(MAX)× Rθ_JA

The internal power dissipation of the MCP1700 is a

function of input voltage, output voltage and output

current. The power dissipation, as a result of the

quiescent current draw, is so low, it is insignificant

(1.6 µA x V_IN). The following equation can be used to

calculate the internal power dissipation of the LDO.

T_J(RISE)= Rise in device junction temperature over

the ambient temperature.

P_TOTAL= Maximum device power dissipation.

Rθ_JA= Thermal resistance from junction to ambient.

EQUATION 6-5:

EQUATION 6-1:

T_J= T_J(RISE)+ T_A

P_LDO= (V_IN(MAX))– V_OUT(MIN)) × I_OUT(MAX))

T_J= Junction Temperature.

P_LDO= LDO Pass device internal power dissipation

V_IN(MAX)= Maximum input voltage

T_J(RISE)= Rise in device junction temperature over

the ambient temperature.

T_A= Ambient temperature.

V_OUT(MIN)= LDO minimum output voltage

The maximum continuous operating junction

temperature specified for the MCP1700 is +125°C. To

estimate the internal junction temperature of the

MCP1700, the total internal power dissipation is

multiplied by the thermal resistance from junction to

ambient (Rθ_JA). The thermal resistance from junction to

ambient for the SOT-23 pin package is estimated at

230°C/W.

DS21826B-page 13

MCP1700

6.3

Voltage Regulator

T_J= T_JRISE+ T_A(MAX)

T_J= 90.2°C

Internal power dissipation, junction temperature rise,

junction temperature and maximum power dissipation

are calculated in the following example. The power

dissipation, as a result of ground current, is small

enough to be neglected.

Maximum Package Power Dissipation at +40°C

Ambient Temperature

SOT-23 (230.0°C/Watt = Rθ_JA

)

P

_D(MAX)= (125°C - 40°C) / 230°C/W

_D(MAX)= 369.6 milli-Watts

6.3.1

POWER DISSIPATION EXAMPLE

P

Package

SOT-89 (52°C/Watt = Rθ_JA

)

Package Type = SOT-23

Input Voltage

P

_D(MAX)= (125°C - 40°C) / 52°C/W

_D(MAX)= 1.635 Watts

P

V

_IN= 2.3V to 3.2V

TO-92 (131.9°C/Watt = Rθ_JA

)

LDO Output Voltages and Currents

P_D(MAX)= (125°C - 40°C) / 131.9°C/W

V_OUT= 1.8V

P_D(MAX)= 644 milli-Watts

I_OUT= 150 mA

Maximum Ambient Temperature

_A(MAX)= +40°C

6.4

Voltage Reference

T

The MCP1700 can be used not only as a regulator, but

also as a low quiescent current voltage reference. In

many microcontroller applications, the initial accuracy

of the reference can be calibrated using production test

equipment or by using a ratio measurement. When the

initial accuracy is calibrated, the thermal stability and

line regulation tolerance are the only errors introduced

by the MCP1700 LDO. The low cost, low quiescent

current and small ceramic output capacitor are all

advantages when using the MCP1700 as a voltage

reference.

Internal Power Dissipation

Internal Power dissipation is the product of the LDO

output current times the voltage across the LDO

(V_INto V_OUT).

P_LDO(MAX)= (V_IN(MAX)- V_OUT(MIN)) x I_OUT(MAX)

P_LDO= (3.2V - (0.97 x 1.8V)) x 150 mA

P_LDO= 218.1 milli-Watts

Device Junction Temperature Rise

The internal junction temperature rise is a function of

internal power dissipation and the thermal resistance

from junction to ambient for the application. The thermal

resistance from junction to ambient (Rθ_JA) is derived

from an EIA/JEDEC standard for measuring thermal

resistance for small surface mount packages. The EIA/

JEDEC specification is JESD51-7, “High Effective

Thermal Conductivity Test Board for Leaded Surface

Mount Packages”. The standard describes the test

method and board specifications for measuring the

thermal resistance from junction to ambient. The actual

thermal resistance for a particular application can vary

depending on many factors, such as copper area and

thickness. Refer to AN792, “A Method to Determine

How Much Power a SOT-23 Can Dissipate in an

Application”, (DS00792), for more information regarding

this subject.

Ratio Metric Reference

PIC^®

Microcontroller

1 µA Bias

MCP1700

V_IN

C_IN

V_REF

V_OUT

C_OUT

1 µF

GND

ADO

AD1

Bridge Sensor

FIGURE 6-2:

Using the MCP1700 as a

voltage reference.

6.5

Pulsed Load Applications

T_J(RISE)= P_TOTALx Rq_JA

For some applications, there are pulsed load current

events that may exceed the specified 250 mA

maximum specification of the MCP1700. The internal

current limit of the MCP1700 will prevent high peak

load demands from causing non-recoverable damage.

The 250 mA rating is a maximum average continuous

rating. As long as the average current does not exceed

250 mA, pulsed higher load currents can be applied to

the MCP1700. The typical current limit for the

MCP1700 is 550 mA (T_A+25°C).

T_JRISE= 218.1 milli-Watts x 230.0°C/Watt

T

_JRISE= 50.2°C

Junction Temperature Estimate

To estimate the internal junction temperature, the

calculated temperature rise is added to the ambient or

offset temperature. For this example, the worst-case

junction temperature is estimated below.

DS21826B-page 14

MCP1700

7.0

7.1

PACKAGING INFORMATION

Package Marking Information

3-Pin SOT-23

Standard

CKNN

Extended Temp

Symbol

CK

Voltage *

1.2

CM

CP

CR

CS

CU

1.8

2.5

3.0

3.3

5.0

3-Pin SOT-89

CUYYWW

NNN

* Custom output voltages available upon request.

Contact your local Microchip sales office for more

information.

Example:

3-Pin TO-92

1700

XXXXXX

YWWNNN

1202E

e

3

TO^^

313256

Legend: XX...X Customer-specific information

Y

Year code (last digit of calendar year)

YY

Year code (last 2 digits of calendar year)

WW

NNN

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

e

3

Pb-free JEDEC designator for Matte Tin (Sn)

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

*

)

3

e

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

DS21826B-page 15

MCP1700

3-Lead Plastic Small Outline Transistor (TT or NB) [SOT-23]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

b

N

E

E1

2

1

e

e1

D

c

A

A2

φ

A1

L

Units

MILLIMETERS

Dimension Limits

MIN

NOM

MAX

Number of Pins

Lead Pitch

N

e

3

0.95 BSC

Outside Lead Pitch

Overall Height

e1

A

1.90 BSC

0.89

0.79

0.01

2.10

1.16

2.67

0.13

0°

–

0.95

–

1.12

1.02

0.10

2.64

1.40

3.05

0.60

10°

Molded Package Thickness

Standoff

A2

A1

E

Overall Width

–

Molded Package Width

Overall Length

Foot Length

E1

D

1.30

2.90

0.50

–

L

Foot Angle

φ

Lead Thickness

Lead Width

c

0.08

0.30

–

0.20

0.54

b

–

Notes:

1. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.25 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-104B

DS21826B-page 16

MCP1700

3-Lead Plastic Small Outline Transistor Header (MB) [SOT-89]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

D

D1

E

H

L

N

1

2

b

b1

e

E1

e1

A

C

Units

MILLIMETERS

Dimension Limits

MIN

MAX

Number of Leads

Pitch

N

e

3

1.50 BSC

3.00 BSC

Outside Lead Pitch

Overall Height

Overall Width

e1

A

1.40

3.94

2.29

2.13

4.39

1.40

0.79

0.35

0.41

0.36

1.60

4.25

2.60

2.29

4.60

1.83

1.20

0.44

0.56

0.48

H

Molded Package Width at Base

Molded Package Width at Top

Overall Length

E

E1

D

Tab Length

D1

L

Foot Length

Lead Thickness

c

Lead 2 Width

b

Leads 1 & 3 Width

b1

Notes:

1. Dimensions D and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.127 mm per side.

2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-029B

DS21826B-page 17

MCP1700

3-Lead Plastic Transistor Outline (TO or ZB) [TO-92]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

E

A

N

1

L

1

2

3

b

e

c

D

R

Units

INCHES

Dimension Limits

MIN

MAX

Number of Pins

Pitch

N

e

3

.050 BSC

Bottom to Package Flat

Overall Width

Overall Length

D

E

A

R

L

.125

.175

.170

.080

.500

.014

.165

.205

.210

.105

–

Molded Package Radius

Tip to Seating Plane

Lead Thickness

c

.021

.022

Lead Width

b

Notes:

1. Dimensions A and E do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .005" per side.

2. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-101B

DS21826B-page 18

MCP1700

APPENDIX A: REVISION HISTORY

Revision B (February 2007)

• Updated Packaging Information.

• Corrected Section “Product Identification

System”.

• Changed X5R to X7R in Notes to “DC

Characteristics”, “Temperature

Specifications”, and “Typical Performance

Curves” .

Revision A (November 2005)

• Original Release of this Document.

DS21826B-page 19

MCP1700

NOTES:

DS21826B-page 20

MCP1700

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO.

MCP1700

X-

XXX

X

/XX

Examples:

SOT-89 Package:

Tape & Voltage Tolerance Temp. Package

Output

Reel

Range

a) MCP1700T-1202E/MB: 1.2V V_OUT

b) MCP1700T-1802E/MB: 1.8V V_OUT

c) MCP1700T-2502E/MB: 2.5V V_OUT

d) MCP1700T-3002E/MB: 3.0V V_OUT

e) MCP1700T-3302E/MB: 3.3V V_OUT

Device:

MCP1700: Low Quiescent Current LDO

f)

MCP1700T-5002E/MB: 5.0V V_OUT

Tape and Reel:

T:

Tape and Reel only applies to SOT-23 and SOT-89

devices

TO-92 Package:

g) MCP1700-1202E/TO:

h) MCP1700-1802E/TO:

1.2V V_OUT

1.8V V_OUT

2.5V V_OUT

3.0V V_OUT

3.3V V_OUT

5.0V V_OUT

Standard Output

Voltage: *

120 = 1.2V

180 = 1.8V

250 = 2.5V

300 = 3.0V

330 = 3.3V

500 = 5.0V

i)

j)

MCP1700-2502E/TO:

MCP1700-3002E/TO:

k) MCP1700-3302E/TO:

l) MCP1700-5002E/TO:

SOT-23 Package:

* Custom output voltages available upon request. Contact

your local Microchip sales office for more information

a) MCP1700T-1202E/TT: 1.2V V_OUT

b) MCP1700T-1802E/TT: 1.8V V_OUT

c) MCP1700T-2502E/TT: 2.5V V_OUT

d) MCP1700T-3002E/TT: 3.0V V_OUT

e) MCP1700T-3302E/TT: 3.3V V_OUT

Tolerance:

2

=

2%

Temperature Range:

Package:

E

-40°C to +125°C (Extended)

f)

MCP1700T-5002E/TT: 5.0V V_OUT

MB

TO

TT

=

Plastic Small Outline Transistor (SOT-89), 3-lead

Plastic Small Outline Transistor (TO-92), 3-lead

Plastic Small Outline Transistor SOT-23), 3-lead

DS21826B-page 21

MCP1700

NOTES:

DS21826B-page 22

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, KEELOQ logo, microID, MPLAB, PIC,

PICmicro, PICSTART, PRO MATE, PowerSmart, rfPIC, and

SmartShunt are registered trademarks of Microchip

Technology Incorporated in the U.S.A. and other countries.

AmpLab, FilterLab, Linear Active Thermistor, Migratable

Memory, MXDEV, MXLAB, PS logo, SEEVAL, SmartSensor

and The Embedded Control Solutions Company are

registered trademarks of Microchip Technology Incorporated

in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, ECAN,

ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,

In-Circuit Serial Programming, ICSP, ICEPIC, Mindi, MiWi,

MPASM, MPLAB Certified logo, MPLIB, MPLINK, PICkit,

PICDEM, PICDEM.net, PICLAB, PICtail, PowerCal,

PowerInfo, PowerMate, PowerTool, REAL ICE, rfLAB,

rfPICDEM, Select Mode, Smart Serial, SmartTel, Total

Endurance, UNI/O, WiperLock and ZENA are trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona, Gresham, Oregon and Mountain View, California. The

Company’s quality system processes and procedures are for its PIC^®

MCUs and dsPIC^®DSCs, KEELOQ^®code hopping devices, Serial

EEPROMs, microperipherals, nonvolatile memory and analog

products. In addition, Microchip’s quality system for the design and

manufacture of development systems is ISO 9001:2000 certified.

DS21826B-page 23

WORLDWIDE SALES AND SERVICE

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Habour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-4182-8400

Fax: 91-80-4182-8422

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

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Tel: 91-11-4160-8631

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Tel: 972-818-7423

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Kokomo, IN

Tel: 765-864-8360

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Tel: 86-755-8203-2660

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Tel: 886-7-536-4818

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Tel: 949-462-9523

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Tel: 86-757-2839-5507

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Fax: 66-2-694-1350

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Xian

Tel: 86-29-8833-7250

Fax: 86-29-8833-7256

12/08/06

DS21826B-page 24


型号：	MCP1700-1502E
厂家：	MICROCHIP
描述：	Low Quiescent Current LDO 低静态电流LDO
文件：	总24页 (文件大小：654K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCP1700-1502E [MICROCHIP]

相关型号：

MCP1700-1502E/TO

MCP1700-1702E/TO

MCP1700-1802E

MCP1700-1802E/MAY

MCP1700-1802E/MB

MCP1700-1802E/TO

MCP1700-1802E/TT

MCP1700-1802EMB

MCP1700-1802ETO

MCP1700-1802ETT

MCP1700-2002E/TO

MCP1700-2102E/TO