MCP1700-1802E/MB [MICROCHIP]
1.8 V FIXED POSITIVE LDO REGULATOR, 0.35 V DROPOUT, PSSO3, PLASTIC, TO-243, SOT-89, 3 PIN;
| 型号： | MCP1700-1802E/MB |
| 厂家： | 
MICROCHIP |
| 描述： | 1.8 V FIXED POSITIVE LDO REGULATOR, 0.35 V DROPOUT, PSSO3, PLASTIC, TO-243, SOT-89, 3 PIN 输出元件 调节器 |
| 文件： | 总22页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCP1700
M
Low Quiescent Current LDO
Features
Description
• 1.6 µA Typical Quiescent Current
• Input Operating Voltage Range: 2.3V to 6.0V
• Output Voltage Range: 1.2V to 5.0V
• 250 mA Output Current for output voltages ≥ 2.5V
• 200 mA Output Current for output voltages < 2.5V
• Low Dropout (LDO) voltage
The MCP1700 is a family of CMOS low dropout (LDO)
voltage regulators that can deliver up to 250 mA of
current while consuming only 1.6 µA of quiescent
current (typical). The input operating range is specified
from 2.3V to 6.0V, making it an ideal choice for two and
three primary cell battery-powered applications, as well
as single cell Li-Ion-powered applications.
- 178 mV typical @ 250 mA for V
= 2.8V
OUT
The MCP1700 is capable of delivering 250 mA with
only 178 mV of input to output voltage differential
• 0.4% Typical Output Voltage Tolerance
• Standard Output Voltage Options:
- 1.2V, 1.8V, 2.5V, 3.0V, 3.3V, 5.0V
• Stable with 1.0 µF Ceramic Output capacitor
• Short-Circuit Protection
(V
= 2.8V). The output voltage tolerance of the
OUT
MCP1700 is typically ±0.4% at +25°C and ±3%
maximum over the operating junction temperature
range of -40°C to +125°C.
Output voltages available for the MCP1700 range from
1.2V to 5.0V. The LDO output is stable when using only
1 µF output capacitance. Ceramic, tantalum or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
shutdown provide a robust solution for any application.
• Overtemperature Protection
Applications
• Battery-powered Devices
• Battery-powered Alarm Circuits
• Smoke Detectors
Package options include the SOT23, SOT89-3 and
TO92.
2
• CO Detectors
• Pagers and Cellular Phones
• Smart Battery Packs
• Low Quiescent Current Voltage Reference
• PDAs
Package Types
3-Pin SOT23-A 3-Pin SOT-89
3-Pin TO-92
VIN
VIN
• Digital Cameras
• Microcontroller Power
MCP1700
3
1
2 3
MCP1700
MCP1700
Related Literature
• AN765, “Using Microchip’s Micropower LDOs”,
DS00765, Microchip Technology Inc., 2002
2
1
3
1
2
GNDVIN VOUT
GND VOUT
GND VIN VOUT
• AN766, “Pin-Compatible CMOS Upgrades to
BiPolar LDOs”, DS00766,
Microchip Technology Inc., 2002
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”,
DS00792, Microchip Technology Inc., 2001
2003 Microchip Technology Inc.
DS21826A-page 1
MCP1700
Functional Block Diagrams
MCP1700
V
V
OUT
IN
Error Amplifier
+V
IN
Voltage
-
+
Reference
Over Current
Over Temperature
GND
GND
Typical Application Circuits
MCP1700
V
IN
(2.3V to 3.2V)
V
V
OUT
IN
1.8V
C
V
IN
OUT
1 µF Ceramic
I
OUT
C
OUT
150 mA
1 µF Ceramic
DS21826A-page 2
2003 Microchip Technology Inc.
MCP1700
† Notice: Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
............................................................................................+6.5V
DD
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current....................................Internally Limited
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature................................... 150°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM;MM)............... ≥ 4 kV; ≥ 400V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA, COUT = 1 µF
(X5R), CIN = 1 µF (X5R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input / Output Characteristics
Input Operating Voltage
Input Quiescent Current
Maximum Output Current
VIN
Iq
IOUT_mA
2.3
—
—
1.6
—
—
6.0
4
—
—
V
µA
mA
Note 1
IL = 0 mA, VIN = VR +1V
For VR ≥ 2.5V
For VR < 2.5V
250
200
Output Short Circuit Current
Output Voltage Regulation
IOUT_SC
—
408
—
mA
V
VIN = VR +1V, VOUT = GND,
Current (peak current) measured
10 ms after short is applied.
VOUT
VR-3.0% VR±0.4 VR+3.0%
Note 2
VR-2.0%
—
%
50
±0.75
VR+2.0%
—
+1.0
VOUT Temperature Coefficient
Line Regulation
TCVOUT
ppm/°C
%/V
Note 3
(VR+1)V ≤ VIN ≤ 6V
∆VOUT
/
-1.0
(VOUTX∆VIN
)
Load Regulation
∆VOUT/VOUT
-1.5
±1.0
+1.5
%
IL = 0.1 mA to 250 mA for VR ≥ 2.5V
IL = 0.1 mA to 200 mA for VR < 2.5V
Note 4
Dropout Voltage
VIN-VOUT
VIN-VOUT
TR
—
—
—
178
150
500
350
350
—
mV
mV
µs
IL = 250 mA, (Note 1, Note 5)
VR > 2.5V
Dropout Voltage
VR < 2.5V
Output Rise Time
IL = 200 mA, (Note 1, Note 5)
10% VR to 90% VR VIN = 0V to 6V,
RL = 50Ω resistive
Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT
.
2: R is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
V
input voltage (VIN = VR + 1.0V); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ∆Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
2003 Microchip Technology Inc.
DS21826A-page 3
MCP1700
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA, COUT = 1 µF
(X5R), CIN = 1 µF (X5R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 6) of -40°C to +125°C.
Parameters
Output Noise
Power Supply Ripple
Rejection Ratio
Sym
Min
Typ
Max
Units
Conditions
eN
PSRR
—
—
3
44
—
—
µV/(Hz)1/2 IL = 100 mA, f = 1 kHz, COUT = 1 µF
dB
°C
f = 100 Hz, COUT = 1 µF, IL = 50 mA,
VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
Thermal Shutdown Protection
TSD
—
140
—
VIN = VR + 1, IL = 100 µA
Note 1: The minimum VIN must meet two conditions: VIN ≥ 2.3V and VIN ≥ (VR + 3.0%) +VDROPOUT
.
2: R is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, 5.0V. The
V
input voltage (VIN = VR + 1.0V); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * ∆Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with a VR + 1V differential applied.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise specified, all limits are established for VIN = VR + 1, ILOAD = 100 µA,
C
OUT = 1 µF (X5R), CIN = 1 µF (X5R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 1) of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Operating Temperature Range
Storage Temperature Range
Thermal Package Resistance
Thermal Resistance, SOT23-A
TA
TA
TA
-40
-40
-65
+125
+125
+150
°C
°C
°C
Minimum Trace Width Single Layer
Board
θJA
—
335
—
°C/W
—
—
230
52
—
—
°C/W Typical FR4 4-layer Application
°C/W Typical, 1 square inch of copper
Thermal Resistance, SOT89
Thermal Resistance, TO-92
θJA
θJA
EIA/JEDEC JESD51-751-7
—
131.9
—
°C/W
4-Layer Board
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
DS21826A-page 4
2003 Microchip Technology Inc.
MCP1700
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated: V = 1.8V, C
= 1 µF Ceramic (X5R), C = 1 µF Ceramic (X5R), I = 100 µA,
IN L
R
OUT
T = +25°C, V = V +1V.
A
IN
R
Note: Junction Temperature (T ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
J
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
1.206
1.204
1.202
1.200
1.198
1.196
1.194
1.192
1.190
VR = 1.2V
OUT = 0 µA
VR = 1.2V
TJ = +125°C
TJ = +25°C
I
TJ = +125°C
TJ = +25°C
IOUT = 0.1 mA
TJ = - 40°C
TJ = - 40°C
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
2
2.5
3
3.5
4
4.5
5
5.5
6
6
6
Input Voltage (V)
Input Voltage (V)
FIGURE 2-1:
Input Quiescent Current vs.
FIGURE 2-4:
Output Voltage vs. Input
Input Voltage.
Voltage (V = 1.2V).
R
1.8
50
45
VR = 1.8V
IOUT = 0.1 mA
VR = 2.8V
TJ = +125°C
1.795
40
35
30
25
20
15
10
5
TJ = +25°C
1.79
TJ = - 40°C
TJ = - 40°C
TJ = +125°C
TJ = +25°C
1.785
1.78
1.775
1.77
0
0
25
50
75
100 125 150 175 200 225 250
Load Current (mA)
2
2.5
3
3.5
4
4.5
5
5.5
Input Voltage (V)
FIGURE 2-2:
Ground Current vs. Load
FIGURE 2-5:
Output Voltage vs. Input
Current.
Voltage (V = 1.8V).
R
2.50
2.25
2.00
1.75
1.50
1.25
2.800
2.798
2.796
2.794
2.792
2.790
2.788
2.786
2.784
2.782
2.780
2.778
VIN = VR + 1V
IOUT = 0 µA
VR = 2.8V
IOUT = 0.1 mA
TJ = +25°C
VR = 5.0V
TJ = - 40°C
VR = 1.2V
VR = 2.8V
TJ = +125°C
-40 -25 -10
5
20 35 50 65 80 95 110 125
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
5.7
Junction Temperature (°C)
Input Voltage (V)
FIGURE 2-3:
Quiescent Current vs.
FIGURE 2-6:
Voltage (V = 2.8V).
Output Voltage vs. Input
Junction Temperature.
R
2003 Microchip Technology Inc.
DS21826A-page 5
MCP1700
Note: Unless otherwise indicated: V = 1.8V, C
= 1 µF Ceramic (X5R), C = 1 µF Ceramic (X5R), I = 100 µA,
IN L
R
OUT
T = +25°C, V = V +1V.
A
IN
R
TJ = +25°C
5.000
4.995
4.990
4.985
4.980
4.975
4.970
4.965
4.960
4.955
2.798
2.796
2.794
2.792
2.790
2.788
2.786
2.784
2.782
2.780
2.778
TJ = +25°C
TJ = - 40°C
VR = 5.0V
IOUT = 0.1 mA
VR = 2.8V
VIN = VR + 1V
TJ = - 40°C
TJ = +125°C
TJ = +125°C
5
5.2
5.4
5.6
5.8
6
0
50
100
150
200
250
Input Voltage (V)
Load Current (mA)
FIGURE 2-7:
Output Voltage vs. Input
FIGURE 2-10:
Output Voltage vs. Load
Voltage (V = 5.0V).
Current (V = 2.8V).
R
R
1.21
1.20
1.19
1.18
1.17
1.16
1.15
5.000
TJ = - 40°C
TJ = +25°C
TJ = +125°C
VR = 1.2V
TJ = +25°C
4.995
4.990
4.985
4.980
4.975
4.970
4.965
4.960
4.955
VIN = VR + 1V
TJ = - 40°C
VR = 5.0V
V
IN = VR + 1V
TJ = +125°C
0
25
50
75
100
125
150
175
200
0
50
100
150
200
250
Load Curent (mA)
Load Current (mA)
FIGURE 2-8:
Output Voltage vs. Load
FIGURE 2-11:
Output Voltage vs. Load
Current (V = 1.2V).
Current (V = 5.0V).
R
R
0.25
1.792
1.790
VR = 2.8V
0.2
0.15
0.1
TJ = +125°C
TJ = +25°C
TJ = +25°C
1.788
1.786
1.784
1.782
1.780
1.778
TJ = - 40°C
TJ = +125°C
TJ = - 40°C
0.05
0
VR = 1.8V
VIN = VR + 1V
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
225
250
Load Current (mA)
Load Current (mA)
FIGURE 2-9:
Output Voltage vs. Load
FIGURE 2-12:
Current (V = 2.8V).
Dropout Voltage vs. Load
Current (V = 1.8V).
R
R
DS21826A-page 6
2003 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: V = 1.8V, C
= 1 µF Ceramic (X5R), C = 1 µF Ceramic (X5R), I = 100 µA,
R
OUT
IN
L
T = +25°C, V = V +1V.
A
IN
R
10
VIN = 3.8V
0.16
0.14
0.12
0.1
VR = 2.8V
VR = 5.0V
IOUT = 50mA
TJ = +125°C
TJ = - 40°C
VIN = 2.5V
VIN = 2.8V
R = 1.8V
OUT = 50mA
1
VR = 1.2V
V
I
TJ = +25°C
IOUT = 50mA
0.08
0.06
0.04
0.02
0
0.1
0.01
0
25
50
75
100
125
150
175
200
225
250
0.01
0.1
1
10
100
1000
Load Current (mA)
Frequency (KHz)
FIGURE 2-13:
Dropout Voltage vs. Load
FIGURE 2-16:
Noise vs. Frequency.
Dynamic Load Step
Dynamic Load Step
Current (V = 5.0V).
R
FIGURE 2-17:
FIGURE 2-14:
Power Supply Ripple
(V = 1.2V).
Rejection vs. Frequency (V = 1.2V).
R
R
FIGURE 2-18:
FIGURE 2-15:
Power Supply Ripple
(V = 1.8V).
Rejection vs. Frequency (V = 2.8V).
R
R
2003 Microchip Technology Inc.
DS21826A-page 7
MCP1700
Note: Unless otherwise indicated: V = 1.8V, C
= 1 µF Ceramic (X5R), C = 1 µF Ceramic (X5R), I = 100 µA,
R
OUT
IN
L
T = +25°C, V = V +1V.
A
IN
R
FIGURE 2-19:
Dynamic Load Step
Dynamic Load Step
Dynamic Load Step
FIGURE 2-22:
Dynamic Load Step
(V = 2.8V).
(V = 5.0V).
R
R
FIGURE 2-20:
FIGURE 2-23:
Dynamic Line Step
(V = 1.8V).
(V = 2.8V).
R
R
FIGURE 2-21:
FIGURE 2-24:
Startup From V
IN
(V = 2.8V).
(V = 1.2V).
R
R
DS21826A-page 8
2003 Microchip Technology Inc.
MCP1700
Note: Unless otherwise indicated: V = 1.8V, C
= 1 µF Ceramic (X5R), C = 1 µF Ceramic (X5R), I = 100 µA,
R
OUT
IN
L
T = +25°C, V = V +1V.
A
IN
R
0
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
VR = 2.8V
V
IN= 5.0V
I
OUT = 0 to 250 mA
V
IN = 4.3V
VIN= 3.3V
-40 -25 -10
5
20
35
50
65
80
95 110 125
Junction Temperature (°C)
FIGURE 2-25:
Start-up From V
FIGURE 2-28:
Load Regulation vs.
IN
(V = 1.8V).
Junction Temperature (V = 2.8V).
R
R
0.1
VR = 5.0V
IOUT = 0 to 250 mA
0.05
0
VIN= 6.0V
-0.05
-0.1
-0.15
-0.2
V
IN = 5.5V
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (°C)
FIGURE 2-26:
Start-up From V
FIGURE 2-29:
Load Regulation vs.
IN
(V = 2.8V).
Junction Temperature (V = 5.0V).
R
R
0.1
0.3
VR = 1.8V
IOUT = 0 to 200 mA
0.05
0.2
0.1
0
VIN = 5.0V
0
VR = 2.8V
VIN = 3.5V
-0.05
-0.1
VR = 1.8V
-0.1
-0.2
-0.3
-0.4
-0.15
-0.2
V
IN= 2.2V
VR = 1.2V
-0.25
-0.3
-40 -25 -10
5
20
35
50
65
80
95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
Junction Temperature (°C)
Junction Temperature (°C)
FIGURE 2-27:
Load Regulation vs.
FIGURE 2-30:
Line Regulation vs.
Junction Temperature (V = 1.8V).
Temperature (V = 1.2V, 1.8V, 2.8V).
R
R
2003 Microchip Technology Inc.
DS21826A-page 9
MCP1700
3.0
MCP1700 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
MCP1700 PIN FUNCTION TABLE
Pin No.
Pin No.
SOT89
Pin No.
TO-92
Name
Function
SOT23-A
1
2
3
1
3
2
1
3
2
GND
Ground Terminal
Regulated Voltage Output
Unregulated Supply Voltage
V
OUT
V
IN
3.1
Ground Terminal (GND)
3.3
Unregulated Input Voltage Pin
(V )
IN
Regulator ground. Tie GND to the negative side of the
output and the negative side of the input capacitor.
Only the LDO bias current (1.6 µA typical) flows out of
this pin; there is no high current. The LDO output
regulation is referenced to this pin. Minimize voltage
drops between this pin and the negative side of the
load.
Connect V to the input unregulated source voltage.
IN
Like all low dropout linear regulators, low source
impedance is necessary for the stable operation of the
LDO. The amount of capacitance required to ensure
low source impedance will depend on the proximity of
the input source capacitors or battery type. For most
applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
used can be ceramic, tantalum or aluminum electro-
lytic. The low ESR characteristics of the ceramic will
yield better noise and PSRR performance at high-
frequency.
3.2
Connect V
Regulated Output Voltage (V
)
OUT
to the positive side of the load and the
OUT
positive terminal of the output capacitor. The positive
side of the output capacitor should be physically
located as close to the LDO V
pin as is practical.
OUT
The current flowing out of this pin is equal to the DC
load current.
DS21826A-page 10
2003 Microchip Technology Inc.
MCP1700
4.0
4.1
DETAILED DESCRIPTION
Output Regulation
4.3
Overtemperature
A portion of the LDO output voltage is fed back to the
internal error amplifier and compared with the precision
internal bandgap reference. The error amplifier output
will adjust the amount of current that flows through the
P-Channel pass transistor, thus regulating the output
voltage to the desired value. Any changes in input
voltage or output current will cause the error amplifier
to respond and adjust the output voltage to the target
voltage (refer to Figure 4-1).
The internal power dissipation within the LDO is a
function of input-to-output voltage differential and load
current. If the power dissipation within the LDO is
excessive, the internal junction temperature will rise
above the typical shutdown threshold of 140°C. At that
point, the LDO will shut down and begin to cool to the
typical turn-on junction temperature of 130°C. If the
power dissipation is low enough, the device will
continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
4.2
Overcurrent
The MCP1700 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1700 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.
MCP1700
V
V
OUT
IN
Error Amplifier
+V
IN
Voltage
-
Reference
+
Overcurrent
Overtemperature
GND
FIGURE 4-1:
Block Diagram.
2003 Microchip Technology Inc.
DS21826A-page 11
MCP1700
5.2
Output
5.0
FUNCTIONAL DESCRIPTION
The maximum rated continuous output current for the
The MCP1700 CMOS low dropout linear regulator is
intended for applications that need the lowest current
consumption while maintaining output voltage
regulation. The operating continuous load range of the
MCP1700 is 250 mA (V ≥ 2.5V). For applications
R
where V < 2.5V, the maximum output current is
R
200 mA.
MCP1700 is from 0 mA to 250 mA (V ≥ 2.5V). The
R
A minimum output capacitance of 1.0 µF is required for
small signal stability in applications that have up to
250 mA output current capability. The capacitor type
can be ceramic, tantalum or aluminum electrolytic. The
esr range on the output capacitor can range from 0 Ω
to 2.0 Ω.
input operating voltage range is from 2.3V to 6.0V,
making it capable of operating from two, three or four
alkaline cells or a single Li-Ion cell battery input.
5.1
Input
The input of the MCP1700 is connected to the source
of the P-Channel PMOS pass transistor. As with all
LDO circuits, a relatively low source impedance (10Ω)
is needed to prevent the input impedance from causing
the LDO to become unstable. The size and type of the
capacitor needed depends heavily on the input source
type (battery, power supply) and the output current
range of the application. For most applications (up to
100 mA), a 1 µF ceramic capacitor will be sufficient to
ensure circuit stability. Larger values can be used to
improve circuit AC performance.
5.3
Output Rise time
When powering up the internal reference output, the
typical output rise time of 500 µs is controlled to
prevent overshoot of the output voltage.
DS21826A-page 12
2003 Microchip Technology Inc.
MCP1700
EQUATION
TJ(MAX) = PTOTAL × RθJA + TAMAX
= Maximum continuous junction
6.0
6.1
APPLICATION CIRCUITS &
ISSUES
T
Typical Application
J(MAX)
temperature.
= Total device power dissipation.
The MCP1700 is most commonly used as a voltage
regulator. It’s low quiescent current and low dropout
voltage make it ideal for many battery-powered
applications.
P
TOTAL
Rθ = Thermal resistance from junction to ambient.
JA
T
= Maximum ambient temperature.
AMAX
MCP1700
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
V
IN
GND
(2.3V to 3.2V)
V
OUT
V
IN
1.8V
C
IN
VOUT
1 µF Ceramic
I
OUT
C
OUT
150 mA
1 µF Ceramic
EQUATION
FIGURE 6-1:
Typical Application Circuit.
(TJ(MAX) – TA(MAX)
)
---------------------------------------------------
=
PD(MAX)
RθJA
6.1.1
APPLICATION INPUT CONDITIONS
Package Type = SOT23
P
= Maximum device power dissipation.
= Maximum continuous junction
temperature.
D(MAX)
T
J(MAX)
Input Voltage Range = 2.3V to 3.2V
maximum = 3.2V
V
IN
T
= Maximum ambient temperature.
A(MAX)
V
typical = 1.8V
OUT
Rθ = Thermal resistance from junction to ambient.
JA
I
= 150 mA maximum
OUT
6.2
Power Calculations
EQUATION
6.2.1
POWER DISSIPATION
TJ(RISE) = PD(MAX) × RθJA
The internal power dissipation of the MCP1700 is a
function of input voltage, output voltage and output
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant
T
= Rise in device junction temperature over
the ambient temperature.
= Maximum device power dissipation.
J(RISE)
P
TOTAL
(1.6 µA x V ). The following equation can be used to
Rθ = Thermal resistance from junction to ambient.
IN
JA
calculate the internal power dissipation of the LDO.
EQUATION
EQUATION
TJ = TJ(RISE) + TA
PLDO = (VIN(MAX)) – VOUT(MIN)) × IOUT(MAX ))
T = Junction Temperature.
J
T
= Rise in device junction temperature over
P
V
V
= LDO Pass device internal power dissipation
J(RISE)
LDO
the ambient temperature.
T = Ambient temperature.
= Maximum input voltage
IN(MAX)
OUT(MIN)
A
= LDO minimum output voltage
The maximum continuous operating junction
temperature specified for the MCP1700 is +125°C. To
estimate the internal junction temperature of the
MCP1700, the total internal power dissipation is
multiplied by the thermal resistance from junction to
ambient (Rθ ). The thermal resistance from junction to
JA
ambient for the SOT23 pin package is estimated at
230 °C/W.
2003 Microchip Technology Inc.
DS21826A-page 13
MCP1700
6.3
Voltage Regulator
T = T
+ T
A(MAX)
J
JRISE
Internal power dissipation, junction temperature rise,
junction temperature and maximum power dissipation
are calculated in the following example. The power
dissipation, as a result of ground current, is small
enough to be neglected.
T = 90.2°C
J
Maximum Package Power Dissipation at +40°C
Ambient Temperature
SOT23 (230.0°C/Watt = Rθ
)
JA
P
P
= (125°C - 40°C) / 230°C/W
= 369.6 milli-Watts
D(MAX)
6.3.1
POWER DISSIPATION EXAMPLE
D(MAX)
Package
Package Type = SOT23
Input Voltage
SOT89 (52°C/Watt = Rθ
)
JA
P
P
= (125°C - 40°C) / 52°C/W
= 1.635 Watts
D(MAX)
D(MAX)
V
= 2.3V to 3.2V
IN
TO92 (131.9°C/Watt = Rθ
)
JA
LDO Output Voltages and Currents
P
P
= (125°C - 40°C) / 131.9°C/W
= 644 milli-Watts
D(MAX)
D(MAX)
V
I
= 1.8V
OUT
= 150 mA
OUT
Maximum Ambient Temperature
= +40°C
Internal Power Dissipation
6.4
Voltage Reference
T
A(MAX)
The MCP1700 can be used not only as a regulator, but
also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
initial accuracy is calibrated, the thermal stability and
line regulation tolerance are the only errors introduced
by the MCP1700 LDO. The low cost, low quiescent
current and small ceramic output capacitor are all
advantages when using the MCP1700 as a voltage
reference.
Internal Power dissipation is the product of the LDO
output current times the voltage across the LDO
(V to V
).
IN
OUT
LDO(MAX)
P
= (V
- V
) x I
OUT(MIN) OUT(MAX)
IN(MAX)
P
P
= (3.2V - (0.97 x 1.8V)) x 150 mA
= 218.1 milli-Watts
LDO
LDO
Device Junction Temperature Rise
The internal junction temperature rise is a function of
internal power dissipation and the thermal resistance
from junction to ambient for the application. The thermal
Ratio Metric Reference
PICmicro®
1 µA Bias
MCP1700
Microcontroller
resistance from junction to ambient (Rθ ) is derived
JA
VIN
from an EIA/JEDEC standard for measuring thermal
resistance for small surface mount packages. The EIA/
JEDEC specification is JESD51-7, “High Effective
Thermal Conductivity Test Board for Leaded Surface
Mount Packages”. The standard describes the test
method and board specifications for measuring the
thermal resistance from junction to ambient. The actual
thermal resistance for a particular application can vary
depending on many factors, such as copper area and
thickness. Refer to AN792, “A Method to Determine
How Much Power a SOT23 Can Dissipate in an
Application”, (DS00792), for more information regarding
this subject.
CIN
VREF
VOUT
COUT
1 µF
1 µF
GND
ADO
AD1
Bridge Sensor
FIGURE 6-2:
Using the MCP1700 as a
voltage reference.
6.5
Pulsed Load Applications
T
= P
x Rq
TOTAL JA
J(RISE)
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1700. The internal
current limit of the MCP1700 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1700. The typical current limit for the
T
T
= 218.1 milli-Watts x 230.0°C/Watt
= 50.2°C
JRISE
JRISE
Junction Temperature Estimate
To estimate the internal junction temperature, the
calculated temperature rise is added to the ambient or
offset temperature. For this example, the worst-case
junction temperature is estimated below.
MCP1700 is 550 mA (T +25°C).
A
DS21826A-page 14
2003 Microchip Technology Inc.
MCP1700
7.0
7.1
PACKAGING INFORMATION
Package Marking Information
3-Pin SOT-23A
Standard
CKNN
Extended Temp
Symbol
CK
Voltage *
1.2
CM
CP
CR
CS
CU
1.8
2.5
3.0
3.3
5.0
3-Pin SOT-89
CUYYWW
NNN
* Custom output voltages available upon request.
Contact your local Microchip sales office for more
information.
Example:
3-Pin TO-92
1700
1202E
313256
XXXXXX
XXXXXX
YWWNNN
Legend: XX...X Customer specific information*
Y
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
YY
WW
NNN
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard device marking consists of Microchip part number, year code, week code, and traceability
code.
2003 Microchip Technology Inc.
DS21826A-page 15
MCP1700
3-Lead Plastic Small Outline Transistor (TT) (SOT-23)
E
E1
2
B
p1
D
n
p
1
α
c
A
A2
A1
φ
β
L
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
3
MAX
n
p
p1
A
A2
A1
E
E1
D
L
φ
Number of Pins
Pitch
3
.038
.076
.040
.037
.002
.093
.051
.115
.018
5
0.96
1.92
Outside lead pitch (basic)
Overall Height
Molded Package Thickness
.035
.044
0.89
0.88
1.01
0.95
0.06
2.37
1.30
2.92
0.45
5
1.12
1.02
0.10
2.64
1.40
3.04
0.55
10
.035
.000
.083
.047
.110
.014
0
.040
.004
.104
.055
.120
.022
10
Standoff
§
0.01
2.10
1.20
2.80
0.35
0
Overall Width
Molded Package Width
Overall Length
Foot Length
Foot Angle
Lead Thickness
Lead Width
c
.004
.015
0
.006
.017
5
.007
.020
10
0.09
0.37
0
0.14
0.44
5
0.18
0.51
10
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
0
5
10
0
5
10
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-236
Drawing No. C04-104
DS21826A-page 16
2003 Microchip Technology Inc.
MCP1700
3-Lead Plastic Small Outline Transistor Header (MB) (SOT-89)
H
E
B1
3
B
D1
D
p1
2
1
p
B1
L
E1
A
C
Units
INCHES
MILLIMETERS*
MIN MAX
1.50 BSC
Dimension Limits
p
MIN
MAX
Pitch
.059 BSC
.118 BSC
.055
p1
A
Outside lead pitch (basic)
Overall Height
3.00 BSC
1.40
.063
.167
.102
.090
.181
.072
.047
.017
.022
.019
1.60
4.25
2.60
2.29
4.60
1.83
1.20
0.44
0.56
0.48
Overall Width
H
.155
3.94
Molded Package Width at Base
Molded Package Width at Top
Overall Length
E
E1
D
.090
2.29
.084
2.13
.173
4.40
Tab Length
D1
L
.064
1.62
Foot Length
.035
0.89
c
Lead Thickness
.014
0.35
Lead 2 Width
B
.017
0.44
Leads 1 & 3 Width
B1
.014
0.36
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not
exceed .005" (0.127mm) per side.
JEDEC Equivalent: TO-243
Drawing No. C04-29
2003 Microchip Technology Inc.
DS21826A-page 17
MCP1700
3-Lead Plastic Transistor Outline (TO) (TO-92)
E1
D
n
1
L
1
2
3
α
B
p
c
A
R
β
Units
INCHES*
NOM
MILLIMETERS
Dimension Limits
MIN
MAX
MIN
NOM
3
MAX
n
p
Number of Pins
Pitch
Bottom to Package Flat
Overall Width
Overall Length
Molded Package Radius
Tip to Seating Plane
Lead Thickness
Lead Width
3
.050
.143
.186
.183
.090
.555
.017
.019
5
1.27
A
E1
D
R
L
.130
.155
.195
.195
.095
.610
.020
.022
6
3.30
4.45
3.62
4.71
4.64
2.29
14.10
0.43
0.48
5
3.94
.175
.170
.085
.500
.014
.016
4
4.95
4.95
2.41
15.49
0.51
0.56
6
4.32
2.16
12.70
0.36
0.41
4
c
B
α
β
Mold Draft Angle Top
Mold Draft Angle Bottom
2
3
4
2
3
4
*Controlling Parameter
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: TO-92
Drawing No. C04-101
DS21826A-page 18
2003 Microchip Technology Inc.
MCP1700
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
X-
XXX
X
X
XX
Examples:
TO-92 Package:
MCP1700
Tape & Voltage Tolerance Temp. Package
Output
Reel
Range
a) MCP1700-1202E/TO:
b) MCP1700-1802E/TO:
c) MCP1700-2502E/TO:
d) MCP1700-3002E/TO:
e) MCP1700-3302E/TO:
1.2V VOUT
1.8V VOUT
2.5V VOUT
3.0V VOUT
3.3V VOUT
5.0V VOUT
Device:
MCP1700: Low Quiescent Current LDO
f)
MCP1700-5002E/TO:
Tape and Reel:
Tape and Reel only applies to SOT-23 and SOT-89 devices
SOT89 Package:
Standard Output
Voltage: *
120 = 1.2V
180 = 1.8V
250 = 2.5V
300 = 3.0V
330 = 3.3V
500 = 5.0V
a) MCP1700T-1202E/MB: 1.2V VOUT
b) MCP1700T-1802E/MB: 1.8V VOUT
c) MCP1700T-2502E/MB: 2.5V VOUT
d) MCP1700T-3002E/MB: 3.0V VOUT
e) MCP1700T-3302E/MB: 3.3V VOUT
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information
f)
MCP1700T-5002E/MB: 5.0V VOUT
SOT23 Package:
a) MCP1700T-1202E/TT: 1.2V VOUT
b) MCP1700T-1802E/TT: 1.8V VOUT
c) MCP1700T-2502E/TT: 2.5V VOUT
d) MCP1700T-3002E/TT: 3.0V VOUT
e) MCP1700T-3302E/TT: 3.3V VOUT
Tolerance:
2
=
=
2%
Temperature Range:
Package:
E
-40°C to +125°C (Extended)
TO
MB
TT
=
=
=
3-lead TO-92
3-lead SOT89
3-lead SOT23
f)
MCP1700T-5002E/TT: 5.0V VOUT
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and
recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2003 Microchip Technology Inc.
DS21826A-page 19
MCP1700
NOTES:
DS21826A-page 20
2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical
components in life support systems is not authorized except
with express written approval by Microchip. No licenses are
conveyed, implicitly or otherwise, under any intellectual
property rights.
Trademarks
The Microchip name and logo, the Microchip logo, Accuron,
dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART,
PRO MATE and PowerSmart are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER,
SEEVAL and The Embedded Control Solutions Company are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Application Maestro, dsPICDEM, dsPICDEM.net, ECAN,
ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo,
PowerMate, PowerTool, rfLAB, rfPIC, Select Mode,
SmartSensor, SmartShunt, SmartTel and Total Endurance are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2003, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2003 Microchip Technology Inc.
DS21826A-page 21
M
WORLDWIDE SALES AND SERVICE
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AMERICAS
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Room 701, Bldg. B
Ballerup DK-2750 Denmark
Tel: 45-4420-9895 Fax: 45-4420-9910
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Kokomo
France
2767 S. Albright Road
Kokomo, IN 46902
Tel: 765-864-8360
Fax: 765-864-8387
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
Tel: 86-21-6275-5700
Fax: 86-21-6275-5060
China - Shenzhen
Los Angeles
Rm. 1812, 18/F, Building A, United Plaza
No. 5022 Binhe Road, Futian District
Shenzhen 518033, China
Tel: 86-755-82901380
18201 Von Karman, Suite 1090
Irvine, CA 92612
Germany
Tel: 949-263-1888
Steinheilstrasse 10
D-85737 Ismaning, Germany
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Fax: 949-263-1338
Fax: 86-755-8295-1393
Phoenix
China - Shunde
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966
Fax: 480-792-4338
Room 401, Hongjian Building
No. 2 Fengxiangnan Road, Ronggui Town
Shunde City, Guangdong 528303, China
Tel: 86-765-8395507 Fax: 86-765-8395571
Italy
Via Quasimodo, 12
20025 Legnano (MI)
Milan, Italy
China - Qingdao
San Jose
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950
Rm. B505A, Fullhope Plaza,
No. 12 Hong Kong Central Rd.
Qingdao 266071, China
Fax: 408-436-7955
Tel: 86-532-5027355 Fax: 86-532-5027205
P. A. De Biesbosch 14
NL-5152 SC Drunen, Netherlands
Tel: 31-416-690399
India
Toronto
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Japan
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699
Fax: 31-416-690340
United Kingdom
505 Eskdale Road
Fax: 905-673-6509
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
07/28/03
DS21826A-page 22
2003 Microchip Technology Inc.
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