MDD2N60RH [MGCHIP]
N-Channel MOSFET 600V, 1.9A, 4.5ohm;
| 型号： | MDD2N60RH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 600V, 1.9A, 4.5ohm |
| 文件： | 总6页 (文件大小：968K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD2N60
N-Channel MOSFET 600V, 1.9A, 4.5Ω
General Description
Features
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
VDS = 600V
ID = 1.9A
RDS(ON) ≤ 4.5Ω
@ VGS = 10V
@ VGS = 10V
Applications
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Power Supply
PFC
High Current, High Speed Switching
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
600
Unit
V
Drain-Source Voltage
VDSS
VGSS
Gate-Source Voltage
±30
V
TC=25oC
TC=100oC
1.9
A
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
1.2
A
IDM
PD
7.6
A
TC=25oC
42
W
W/ oC
Derate above 25 oC
0.34
4.2
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
EAR
dv/dt
EAS
mJ
V/ns
mJ
4.5
115
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
Rating
Unit
110
oC/W
RθJC
2.98
1
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDD2N60RH
-55~150oC
D-PAK
Reel
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 0.95A
VDS = 30V, ID = 1.0A
600
-
-
-
5.0
1
V
3.0
-
-
-
μA
nA
Ω
IGSS
-
100
4.5
-
RDS(ON)
gfs
3.6
0.5
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
6.7
2.2
Gate-Source Charge
Gate-Drain Charge
VDS = 480V, ID = 2.0A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
2.5
Input Capacitance
275
1.4
360
2
Reverse Transfer Capacitance
Output Capacitance
32
40
Turn-On Delay Time
Rise Time
10.6
29.6
40.4
38.4
VGS = 10V, VDS = 300V, ID = 2.0A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
IS
VSD
trr
-
-
-
-
-
1.9
1.4
A
V
IS = 1.9A, VGS = 0V
206
ns
μC
IF = 2.0A, di/dt = 100A/μs
Body Diode Reverse Recovery
Charge
Qrr
0.76
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤2.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=53mH, IAS=2.0A, VDD=50V, R =25Ω, Starting TJ=25°C,
g
2
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
4
3
2
1
8
7
6
5
4
3
2
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
=15.0V
VGS=10.0V
Notes
VGS=20V
1. 250㎲ Pulse Test
2. TC=25℃
5
10
15
20
0
2
4
6
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
※ Notes :
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1. VGS = 10 V
2. ID = 0.95A
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
10
※ Notes :
10
1. VGS = 0 V
* Notes ;
2.250s Pulse test
1. Vds=30V
1
25℃
150℃
1
150℃
-55℃
25℃
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
4
6
8
10
VSD, Source-Drain Voltage [V]
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
500
400
300
200
100
0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
8
※ Note : ID = 2.0A
120V
300V
Coss
480V
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
2
0
1
10
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
5000
4000
3000
2000
1000
0
101
Operation in This Area
single Pulse
RthJC = 2.98℃/W
TC = 25℃
10 s
is Limited by R DS(on)
100 s
1 ms
10 ms
100 ms
100
10-1
10-2
DC
Single Pulse
TJ=Max rated
TC=25℃
1E-5
1E-4
1E-3
0.01
0.1
1
10
10-1
100
101
102
103
Pulse Width (s)
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Single Pulse Maximum Power
Dissipation
3
2
1
0
D=0.5
100
10-1
10-2
0.2
0.1
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
RΘ =2.98℃/W
JC
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
25
50
75
100
125
150
t1, Rectangular Pulse Duration [sec]
TC, Case Temperature [℃]
Fig.12 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
Physical Dimension
4
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
TO-252 (DPAK)
Dimensions are in millimeters, unless otherwise specified
5
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Mar. 2014 Version 1.5
MagnaChip Semiconductor Ltd.
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