MDD310 [IXYS]

High Power Diode Modules; 大功率二极管模块
MDD310
型号: MDD310
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

High Power Diode Modules
大功率二极管模块

二极管
文件: 总3页 (文件大小:117K)
中文:  中文翻译
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MDD 310  
IFRMS = 2x 480 A  
IFAVM = 2x 305 A  
VRRM = 800-2200 V  
High Power  
Diode Modules  
3
3
1
2
2
VRSM  
V
VRRM  
V
Type  
1
900  
1300  
1500  
1700  
2100  
2300  
800  
1200  
1400  
1600  
2000  
2200  
MDD 310-08N1  
MDD 310-12N1  
MDD 310-14N1  
MDD 310-16N1  
MDD 310-20N1  
MDD 310-22N1  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 100°C; 180° sine  
480  
305  
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11 500  
12 200  
A
A
UL registered, E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9 600  
10 200  
A
A
Applications  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
662 000  
620 000  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
460 000  
430 000  
A2s  
A2s  
Battery DC power supplies  
Advantages  
Space and weight savings  
Simple mounting  
Improved temperature and power  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
cycling  
Reduced protection circuits  
IISOL £ 1 mA  
Md  
Mounting torque (M5)  
2.5-5/22-44 Nm/lb.in.  
Terminal connection torque (M8)  
12-15/106-132 Nm/lb.in.  
Dimensions in mm (1 mm = 0.0394")  
Weight  
Typical including screws  
320  
g
Symbol  
IRRM  
Test Conditions  
Characteristic Values  
TVJ = TVJM; VR = VRRM  
40 mA  
VF  
IF = 600 A; TVJ = 25°C  
1.2  
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.75  
0.63 mW  
V
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.129 K/W  
0.065 K/W  
0.169 K/W  
0.0845 K/W  
other values  
see Fig. 6/7  
RthJK  
QS  
IRM  
TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms  
760  
275  
mC  
A
20  
12  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
14  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
Threaded spacer for higher Anode/Cathode  
construction: Type ZY 250, material brass  
© 2000 IXYS All rights reserved  
1 - 3  
MDD 310  
t  
© 2000 IXYS All rights reserved  
2 - 3  
MDD 310  
Fig. 5 Three phase rectifier bridge:  
Power dissipation versus direct  
output current and ambient  
temperature  
0.15  
K/W  
Fig. 6 Transient thermal impedance  
junction to case (per diode)  
30°  
DC  
RthJC for various conduction angles d:  
ZthJC  
d
RthJC (K/W)  
0.10  
0.05  
DC  
180°  
120°  
60°  
0.129  
0.131  
0.132  
0.132  
0.133  
30°  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.0035  
0.0165  
0.1091  
0.0099  
0.168  
0.456  
0
10-3  
10-2  
10-1  
100  
101  
102  
s
t
0.20  
K/W  
Fig. 7 Transient thermal impedance  
junction toheatsink(per diode)  
30°  
DC  
ZthJK  
RthJK for various conduction angles d:  
0.15  
0.10  
0.05  
d
RthJK (K/W)  
DC  
180°  
120°  
60°  
0.169  
0.171  
0.172  
0.172  
0.173  
30°  
Constants for ZthJK calculation:  
i
Rthi (K/W)  
ti (s)  
1
2
3
4
0.0035  
0.0165  
0.1091  
0.04  
0.0099  
0.168  
0.456  
1.36  
0
10-3  
10-2  
10-1  
100  
101  
s
102  
t
© 2000 IXYS All rights reserved  
3 - 3  

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