WF512K32N-120G2LI5 [MERCURY]
Flash Module,;
| 型号： | WF512K32N-120G2LI5 |
| 厂家： | 
MERCURY UNITED ELECTRONICS INC |
| 描述： | Flash Module, 内存集成电路 |
| 文件： | 总12页 (文件大小：964K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
512Kx32 5V NOR FLASH MODULE
SMD 5962-94612**
WF512K32-XXX5
FEATURES
Access Times of 60, 70, 90, 120, 150ns
Low Power CMOS
Packaging
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Built-in Decoupling Caps for Low Noise Operation
• 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP
(H2) (Package 400).
• 68 lead, 40mm, Low Profile 3.5mm (0.140"), CQFP
Page Program Operation and Internal Program Control
(Package 502)1
Time
• 68 lead, 22.4mm (0.880") Low Profile CQFP (G2U)
3.5mm (0.140") high, (Package 510)
Weight
WF512K32-XG2UX5 - 8 grams typical
WF512K32N-XH1X5 - 13 grams typical
WF512K32-XG4TX5(1) - 20 grams typical
WF512K32-XG2LX5 - 8 grams typical
• 68 lead, 22.4mm (0.880") CQFP (G2L) 5.08mm (0.200")
high, Package (528)
100,000 Erase/Program Cycles Minimum
Sector Architecture
• 8 equal size sectors of 64KBytes each
* This product is subject to change without notice.
Note 1: Package Not Recommended for New Design
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
For Flash programming information and waveforms refer to "Flash programming 4M5 Application
Note AN0037."
Organized as 512Kx32
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming
** For reference only. See table page 11
FIGURE 1 – PIN CONFIGURATION FOR WF512K32N-XH1X5
Top View
Pin Description
1
12
23
34
45
56
I/O0-31
A0-18
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
I/O8
I/O9
I/O10
A14
A16
A11
WE2#
CS2#
GND
I/O11
A10
I/O15
I/O14
I/O13
I/O12
OE#
A17
I/O24
VCC
CS4#
WE4#
I/O27
A4
I/O31
I/O30
I/O29
I/O28
A1
WE1-4
#
CS1-4
OE#
VCC
#
I/O25
I/O26
A7
Output Enable
Power Supply
Ground
GND
NC
Not Connected
A12
Block Diagram
A9
NC
A5
A2
WE1# CS1#
WE2# CS2#
WE3# CS3#
WE4# CS4#
512K x 8
A0
A15
WE1#
I/O7
A13
A6
A3
OE#
A0-18
A18
I/O0
I/O1
I/O2
VCC
CS1#
NC
A8
WE3#
CS3#
GND
I/O19
I/O23
I/O22
I/O21
I/O20
512K x 8
512K x 8
512K x 8
I/O6
I/O16
I/O17
I/O18
I/O5
8
8
8
8
I/O3
I/O4
I/O0-7
I/O8-15
I/O16-23
I/O24-31
11
22
33
44
55
66
1
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
4336.17E-0816-ss-WF512K32-XXX5
WF512K32-XXX5
FIGURE 2 – PIN CONFIGURATION FOR WF512K32-XG4TX51
Top View Pin Description
I/O0-31
A0-18
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Power Supply
Ground
WE#
9
8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
CS1-4
OE#
VCC
#
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
GND
NC
Not Connected
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
Block Diagram
CS1#
CS2#
CS3#
CS4#
WE#
OE#
A0-18
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
512K X 8
512K X 8
512K X 8
512K X 8
8
8
8
8
I/O0 - 7
I/O8 - 15
I/O16 - 23
I/O24 - 31
Note 1: Package not recommended for new designs
FIGURE 3 – PIN CONFIGURATION FOR WF512K32-XG2UX5 AND WF512K32-XG2LX5
Top View Pin Description
I/O0-31
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
A0-18
9
8
7
6
5
4
3
2
1
68 67 66 65 64 63 62 61
60 I/O16
WE1-4
#
I/O0 10
I/O1 11
I/O2 12
I/O3 13
I/O4 14
I/O5 15
I/O6 16
I/O7 17
GND 18
I/O8 19
I/O9 20
I/O10 21
I/O11 22
I/O12 23
I/O13 24
I/O14 25
I/O15 26
59 I/O17
58 I/O18
57 I/O19
56 I/O20
55 I/O21
54 I/O22
53 I/O23
52 GND
51 I/O24
50 I/O25
49 I/O26
48 I/O27
47 I/O28
46 I/O29
45 I/O30
44 I/O31
CS1-4
OE#
VCC
#
Output Enable
Power Supply
Ground
GND
NC
Not Connected
Block Diagram
WE1# CS1#
WE2# CS2#
WE3# CS3#
WE4# CS4#
512K x 8
OE#
A0-18
2728 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
512K x 8
512K x 8
512K x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
2
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
Absolute Maximum Ratings (1)
CAPACITANCE
TA = +25°C
Parameter
Unit
°C
V
V
°C
°C
Parameter
Symbol
Conditions
Max Unit
Operating Temperature (Mil, Q)
Supply Voltage Range (VCC)
Signal voltage range (any pin except A9) (2)
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Data Retention (Mil Temp)
Endurance - write/erase cycles
A9 Voltage for sector protect (VID) (3)
NOTES:
-55 to +125
-2.0 to +7.0
-2.0 to +7.0
-65 to +150
+300
OE# capacitance
WE1-4# capacitance
HIP (PGA)
COE
CWE
VIN = 0V, f = 1.0 MHz
50
pF
20
50
15
20
20
50
VIN = 0V, f = 1.0 MHz
pF
CQFP G4T
CQFP G2U/G2L
CS1-4# capacitance
Data# I/O capacitance
Address input capacitance
20 years
100,000 cycles min.
-2.0 to +12.5
CCS
CI/O
CAD
VIN = 0V, f = 1.0 MHz
VI/O = 0V, f = 1.0 MHz
VIN = 0V, f = 1.0 MHz
pF
pF
pF
V
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
2. Minimum DC voltage on input or I/O pins is -0.5V. During voltage transitions,inputs may
overshoot Vss to -2.0 V for periods of up to 20ns. Maximum DC voltage on output and I/O pins
is Vcc + 0.5V. During voltage transitions, outputs may overshoot to Vcc + 2.0 V for periods of up
to 20ns.
3. Minimum DC input voltage on A9 pin is -0.5V. During voltage transitions, A9 may overshoot
Vss to -2V for periods of up to 20ns. Maximum DC input voltage on A9 is +12.5V which may
overshoot to 13.5 V for periods up to 20ns.
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
4.5
-55
-40
0
Max
5.5
Unit
V
Supply Voltage
VCC
Operating Temp. (Mil., Q)
Operating Temp. (Ind.)
Operating Temp. (Com.)
TA
+125
+85
°C
°C
°C
TA
TA
+70
DC CHARACTERISTICS
Parameter
Sym
ILI
Conditions
Min
Max
Units
μA
VCC = VCC MAX, VIN = GND to VCC
VCC = VCC MAX, VOUT = GND to VCC
CS# = VIL, OE# = VIH, f = 5MHz
CS# = VIL, OE# = VIH
Input Leakage Current
10
10
Output Leakage Current
ILOx32
ICC1
μA
VCC Active Current for Read (1, 2)
VCC Active Current for Program or Erase (2, 3)
190
240
mA
ICC2
mA
VCC Standby Current (2)
Input High Voltage
ISB
CS# = VCC ± 0.5V, f = 5MHz
6.5
mA
V
VIH
2.0
-0.5
11.5
VCC + 0.3
Input Low Voltage
VIL
VID
+0.8
12.5
V
V
A9 Voltage for Sector Protect
IOL = 8.0mA, VCC = VCC MIN
IOH - 2.5mA, VCC = VCC MIN
Output Low Voltage
Output High Voltage
Low VCC Lock-Out Voltage
NOTES:
VOL
VOH1
VLKO
0.45
V
V
V
0.85 X VCC
3.2
4.2
1. The ICC current listed includes both the DC operating current and the frequency dependent component
(at 5 MHz). The frequency component typically is less than 8 mA/MHz, with OE# at VIH
2. Maximum current specifications are tested with VCC = VCC MAX
.
3. ICC active while Embedded Algorithm (program or erase) is in progress.
3
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS,CS# CONTROLLED
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWLEL
tELEH
tWC
tWS
tCP
ns
ns
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
40
0
45
0
45
0
50
0
50
0
ns
tAVEL
tAS
ns
Data Setup Time
tDVEH
tEHDX
tELAX
tDS
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
45
20
45
20
50
20
50
20
ns
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time
Chip Programming Time
Chip Erase Time (3)
tEHEL
tCPH
ns
tWHWH1
tWHWH2
tGHEL
300
15
300
15
300
15
300
15
300
15
μs
sec
ns
0
0
0
0
0
11
64
11
64
11
64
11
64
11
64
sec
sec
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
FIGURE. 4 – AC TEST CIRCUIT
AC TEST CONDITIONS
Parameter
Input Pulse Levels
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
Notes:
Typ
IL = 0, VIH = 3.0
Unit
V
ns
V
V
5
1.5
1.5
IOL
Current Source
V
V
I
Z is programmable from -2V to +7V.
OL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
Z is typically the midpoint of VOH and VOL
OL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
VZ ≈ 1.5V
(Bipolar Supply)
D.U.T.
eff = 50 pf
C
V
I
.
IOH
Current Source
4
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
60
0
Max
Min
70
0
Max
Min
90
0
Max
Min
120
0
Max
Min
150
0
Max
Write Cycle Time
tAVAV
tWC
tCS
tWP
tAS
ns
ns
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
tELWL
tWLWH
tAVWH
tDVWH
tWHDX
tWHAX
tWHWL
tWHWH1
tWHWH2
tGHWL
40
0
45
0
45
0
50
0
50
0
ns
ns
Data Setup Time
tDS
40
0
45
0
45
0
50
0
50
0
ns
Data Hold Time
tDH
tAH
ns
Address Hold Time
45
20
45
20
45
20
50
20
50
20
ns
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time (2)
Read Recovery Time before Write
VCC Set-up Time
tWPH
ns
300
15
300
15
300
15
300
15
300
15
μs
sec
ns
0
0
0
0
0
tVCS
50
50
50
50
50
μs
sec
ns
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (4)
Chip Erase Time (3)
11
64
11
64
11
64
11
64
11
64
tOES
tOEH
0
0
0
0
0
10
10
10
10
10
ns
sec
NOTES:
1. Typical value for tWHWH1 is 7μs.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data Polling.
tAC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, WE# CONTROLLED
Parameter
Symbol
-60
-70
-90
-120
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
tAVAV
tRC
tACC
tCE
tOE
tDF
60
70
90
120
150
ns
ns
ns
ns
ns
ns
ns
Address Access Time
tAVQV
tELQV
tGLQV
tEHQZ
tGHQZ
tAXQX
60
60
30
20
20
70
70
35
20
20
90
90
35
20
20
120
120
50
150
150
55
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output High Z (1)
Output Enable High to Output High Z (1)
30
35
tDF
30
35
Output Hold from Address, CS# or OE# Change,
whichever is First
tOH
0
0
0
0
0
1. Guaranteed by design, but not tested
5
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
PACKAGE 400: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H1)
30.1 (1.185) 0.38 (0.015) SQ
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
25.4 (1.0) TYP
6.22 (0.245)
MAX
3.81 (0.150)
0.13 (0.005)
1.27 (0.050) 0.13 (0.005)
0.76 (0.030) 0.13 (0.005)
15.24 (0.600) TYP
2.54 (0.100)
TYP
1.27 (0.050) TYP DIA
0.46 (0.018) 0.05 (0.002) DIA
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
6
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
PACKAGE 510: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2U)
25.15 (0.990) 0.25 (0.010) Sꢀ
22.36 (0.880) 0.25 (0.010) Sꢀ
3.56 (0.140) MAX
0.254 (0.010)
+ 0.051 (0.002)
- 0.025 (0.001)
0.254 (0.010) TYP
R 0.127
(0.005)
MIN
24.0 (0.946)
0.25 (0.010)
0.53 (0.021)
0.18 (0.007)
1°/ 7°
1.01 (0.040)
0.13 (0.005)
DETAIL A
1.27 (0.050) TYP
0.38 (0.015)
0.05 (0.002)
SEE DETAIL “A”
20.32 (0.800) TYP
The White 68 lead G2U CQFP fills the same fit
and function as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2U has the TCE and lead
inspection advantage of the CQFP form.
24.0 (0.946) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
7
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
PACKAGE 528: 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2L)
25.15 (0.990) 0.25 (0.010) Sꢀ
22.36 (0.880) 0.25 (0.010) Sꢀ
5.10 (0.200) MAX
0.254 (0.010)
+ 0.051 (0.002)
- 0.025 (0.001)
0.254 (0.010) TYP
R 0.127
(0.005)
MIN
24.0 (0.946)
0.25 (0.010)
1.37 (0.054) MIN
1°/ 7°
0.004
1.01 (0.040)
0.13 (0.005)
DETAIL A
1.27 (0.050) TYP
0.38 (0.015)
0.05 (0.002)
SEE DETAIL “A”
20.32 (0.800) TYP
The Microsemi 68 lead G2L CQFP fills the same
fit and function as the JEDEC 68 lead CQFJ or
68 PLCC. But the G2L has the TCE and lead
inspection advantage of the CQFP form.
24.0 (0.946) TYP
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
8
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
PACKAGE 502: 68 LEAD, CERAMIC QUAD FLAT PACK, LOW PROFILE CQFP (G4T)1
39.6 (1.56) 0.38 (0.015) SQ
3.56 (0.140) MAX
1.27 (0.050)
0.1 (0.005)
PIN 1 IDENTIFIER
Pin 1
12.7 (0.500)
0.5 (0.020)
4 PLACES
5.1 (0.200)
0.25 (0.010)
4 PLACES
0.254 (0.010)
+ 0.05 (0.002)
-0.025 (0.001)
1.27 (0.050)
TYP
0.38 (0.015)
0.08 (0.003)
68 PLACES
38 (1.50) TYP
4 PLACES
Note 1: Package Not Recommended for New Design
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
9
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
ORDERING INFORMATION
W F 512K32 X - XXX X X 5 X
MERCURY SYSTEMS
NOR FLASH
ORGANIZATION, 512K x 32
User configurable as 1M x 16 or 2M x 8
IMPROVEMENT MARK
N
= No Connect at pins 21 and 39 in HIP for Upgrade
ACCESS TIME (ns)
PACKAGE TYPE:
H1
=
=
=
=
1.075" sq. Ceramic Hex In Line Package, HIP (Package 400)
G2U
G2L
G4T
22.4mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 510)
22.4mm Ceramic Quad Flat Pack, CQFP (Package 528)
40mm Low Profile CQFP (Package 502)*
DEVICE GRADE:
Q
M
I
=
=
=
=
Military Grade*
Military Screened
Industrial
-55°C to +125°C
-55°C to +125°C
-40°C to +85°C
0°C to +70°C
C
Commercial
VPP PROGRAMMING VOLTAGE
5
=
5V
LEAD FINISH:
Blank = Gold plated leads
A
= Solder dip leads
* Package Not Recommended for New Design
** This product is processed the same as the 5962-XXXXXHXX product but all
test and mechanical requirements are per the Mercury Systems data sheet.
10
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
DEVICE TYPE
SPEED
PACKAGE
SMD NO.
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
66 pin HIP (H1) 1.075" sq.
5962-94612 01H4X
5962-94612 02H4X
5962-94612 03H4X
5962-94612 04H4X
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
68 lead CQFP Low Profile (G4T)1
5962-94612 01HTX1
5962-94612 02HTX1
5962-94612 03HTX1
5962-94612 04HTX1
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
68 lead CQFP/J (G2U)
5962-94612 01HZX
5962-94612 02HZX
5962-94612 03HZX
5962-94612 04HZX
70ns
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
512K x 32 Flash Module
150ns
120ns
90ns
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
68 lead CQFP (G2L)
5962-94612 01HAX
5962-94612 02HAX
5962-94612 03HAX
5962-94612 04HAX
70ns
NOTE: This table is for reference only. For 5962-94612 ordering information and specifications refer to latest SMD document.
11
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
WF512K32-XXX5
Document Title
512Kx32 5V NOR FLASH MODULE, SMD 5962-94612
Revision History
Rev # History
Release Date Status
Rev 13
Rev 14
Changes (Pg. 1-17)
August 2011
Final
13.1 Change document layout from White Electronic Designs to Microsemi
13.2 Add document Revision History page
13.3 Add "NOR" to headline
Changes (Pg. 1, 2, 3, 4, 13)
May 2012
Final
14.1 Delete package 501
14.2 Change 1,000,000 Erase/Program Cycles Minimum to 100,000
14.3 Change Endurance - write/erase cycles from 1,000,000 to 100,000 and A9
Voltage for sector protect from '-2.0 to + 14.0' to '-2.0 to + 12.5' in Absolute
Maximum Ratings chart; change Input High Voltage Max from VCC + 0.5 to
V
CC + 0.3, add commercial operating temp line and move VIH, VIL and VID to
the DC Characteristics chart; DC Characteristics – CMOS Compatible chart
changes include Symbols ICC4 to ISB, Conditions VCC = 5.5 to VCC = VCC MAX
,
V
V
IN = GND to Vout = GND, VCC = 5.5, CS# = VIH to CS# = VCC ± 0.5V and
CC = 4.5 to VCC = VCC MIN
14.3 Change tELAX -60 from 40 to 45
14.4 Change tWHAX -60 from 40 to 45 and tOE 35 to 30
14.5 Delete all Waveforms diagrams
14.6 Add NOR to Flash
Rev 15
Change (Pg. 10)
May 2014
Final
15.1 Changed Device Grade "Q" description from "MIL-STD-883 Compliant" to
"MIL-PRF-38534 Class H Compliant."
Rev 16
Rev 17
Change (Pg. 10)
August 2014
August 2016
Final
Final
16.1 Changed Device Grade "Q" description from "MIL-PRF-38534 Class H
Compliant" to "Military Grade."
Changes (Pg. All) (ECN 10156)
17.1 Change document layout from Microsemi to Mercury Systems
Mercury Systems reserves the right to change products or specifications without notice.
© 2016 Mercury Systems. All rights reserved.
12
4336.17E-0816-ss-WF512K32-XXX5
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
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