GBU10MP [MCC]
DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, GBU, 4 PIN, Bridge Rectifier Diode;![GBU10MP](http://pdffile.icpdf.com/pdf2/p00254/img/icpdf/GBU10M-B_1537646_icpdf.jpg)
型号: | GBU10MP |
厂家: | ![]() |
描述: | DIODE 10 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, GBU, 4 PIN, Bridge Rectifier Diode |
文件: | 总3页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
GBU10A
THRU
GBU10M
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
10 Amp Single Phase
Glass Passivated
Bridge Rectifiers
50 to 1000 Volts
xꢀ Glass Passivated Chip junction
xꢀ High Surge Overload Rating
xꢀ UL Recognized File # E165989
xꢀ
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
Marking : type number
Maximum Ratings
GBU
xꢀ Operating Temperature: -55к to +150к
xꢀ Storage Temperature: -55к to +150к
xꢀ Typical Thermal Resistance:2.2к/W Junction to Case(Heatsink)
Maximum
Recurrent
Maximum DC
Blocking
Voltage
MCC
Maximum
3.2x45
A
C
Part Number Peak Reverse RMS Voltage
Voltage
N
N
N
I
G
K
H
GBU10A
GBU10B
GBU10D
GBU10G
GBU10J
GBU10K
GBU10M
50V
100V
200V
400V
600V
800V
1000V
35V
70V
50V
100V
200V
400V
600V
800V
1000V
B
J
1.90 RADIUS
N
-
+
~
~
140V
280V
420V
560V
700V
D
L
E
M
F
Electrical Characteristics @ 25к Unless Otherwise Specified
Maximum Average
Forward Current
(with heatsink Note
1)
TC = 100к
IF(AV)
10 A
DIMENSIONS
INCHES
MM
MIN
21.80
18.30
3.30
17.50
0.76
0.46
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
DIM
A
B
C
D
E
F
G
H
I
J
MIN
.860
.720
.130
.690
.030
.018
.290
.140
.065
.089
.077
.040
.190
MAX
.880
.740
.140
.710
.039
.022
.310
.160
MAX
22.30
18.80
3.56
NOTE
IFSM
200A
1.1V
8.3ms, half sine
18.00
1.00
0.56
7.90
4.10
2.16
2.75
2.35
1.27
5.33
At 5A DC
VF
7.40
3.50
TA = 25к
5.0uA
500uA
.085
.108
.093
.050
.210
1.65
2.25
1.95
1.02
4.83
IR
TA = 125к
K
L
M
N
Typical Junction
Capacitance
I2t Rating for Fusing
Measured at
1.0MHz, VR=4.0V
200A2S t<8.3ms
CJ
I2t
70pF
7.0 TYPICAL
Note:1.Device mounted on 100mm × 100mm × 1.6mm Cu Plate
Heatsink
www.mccsemi.com
1 of 3
Revision: 4
2007/01/16
M C C
TM
GBU10A thru GBU10M
Micro Commercial Components
Figure2
Derating Curve Output Rectified Current
Figure1
Maximum Forward Surge Current
300
250
15
12.5
200
10
Amps
Amps
150
100
50
7.5
5.0
2.5
0
0
50
CASE TEMPERATURE
10
100
100
150
1
0
Peak Forward Surge Current - Amperes versus
Number of Cycles At 60 Hz
Figure 4
Typical Reverse Characteristics
Figure 3
Typical Forward Characteristics
100
100
10
10
1.0
µAmps
1.0
Amps
TJ=25к
0.03
0.1
0.01
20
40
60
80
100
120
140
0.01
1.4
1.2
.6
.8
1.0
.4
1.6
Volts
Volts
Instantaneous Reverse Current - MicroAmperes versus
Percent of Rated Peak Reverse Voltage - Volts
Instantaneous Forward Current -Amperes versus
Instantaneous Forward Voltage - Volts
www.mccsemi.com
2 of 3
Revision: 4
2007/01/16
M C C
TM
Micro Commercial Components
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
3 of 3
Revision: 4
2007/01/16
相关型号:
©2020 ICPDF网 联系我们和版权申明