2SD1898-R [MCC]
NPN Silicon Power Transistors; NPN硅功率晶体管
| 型号： | 2SD1898-R |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Silicon Power Transistors |
| 文件： | 总2页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
2SD1898-P
2SD1898-Q
2SD1898-R
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
Micro Commercial Components
Features
•
•
·
High VCEO, VCEO=80V
High IC, IC=1.0A(DC)
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
NPN Silicon
Power Transistors
ꢀ
·
·
ꢀ
ꢀ
ꢀ
Maximum Ratings
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
SOT-89
ꢀ
Symbol
VCEO
VCBO
VEBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, DC
Value
100
80
5.0
1.0
2.0
0.5
2.0
-55 to +150
-55 to +150
Unit
V
V
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
A
B
V
K
ꢀ
ꢀ
A
(1)
ꢀ
ꢀ
Pulse
Collector Power Dissipation(2)
ꢀ
ꢀ
PC
W
ꢀ
ꢀ
E
TJ
TSTG
Junction Temperature
Storage Temperature
OC
OC
ꢀ
ꢀ
C
ꢀ
ꢀ
D
ꢀ
ꢀ
Electrical Characteristics @ 25°C Unless Otherwise Specified
ꢀ
ꢀ
G
H
Symbol
Parameter
Min
Typ
Max
Units
J
ꢀ
ꢀ
F
OFF CHARACTERISTICS
ꢀ
ꢀ
VCEO
VCBO
VEBO
Collector-Emitter Breakdown Voltage
80
100
5.0
---
---
---
---
---
Vdc
Vdc
ꢀ
ꢀ
(I =1.0mAdc)
C
ꢀ
ꢀ
Collector-Base Breakdow n Voltage
ꢀ
ꢀ
(I =50uAdc)
C
1. OUT
2. GND
3. IN
ꢀ
ꢀ
Emitter-Base Breakdown Voltage
---
---
Vdc
1
2
3
(I =50uAdc)
ꢀ
ꢀ
E
I
Collector Cutoff Current
(VCB=80Vdc)
---
1.0
1.0
390
0.4
---
uAdc
uAdc
---
CBO
ꢀ
ꢀ
ꢀ
I
Emitter Cutoff Current
---
---
EBO
(VEB=4.0Vdc, I =0)
C
hFE
DC Current Transfer Ratio(3)
82
---
ꢀꢁꢂꢃꢄꢅꢁꢄꢅꢆ
(VCE=3.0Vdc, I =0.5Adc)
ꢈꢀꢇꢆ
ꢀꢁꢂꢃꢄꢅꢆ
ꢇꢇꢆ
ꢁꢋꢌꢄꢅꢆ
ꢆ
C
ꢇꢀꢁꢆ
ꢍꢎꢏꢐꢆ
ꢇꢉꢊꢆ
ꢇꢀꢁꢆ
ꢒꢍꢐꢓꢆ
1.55
ꢇꢉꢊꢆ
ꢒꢍꢔꢕꢆ
ꢇꢇꢇꢇꢇ
VCE(sat)
fT
Collector-Emitter Saturation Voltage
---
0.15
100
Vdc
MHz
ꢉꢆ
ꢖ
ꢍꢎꢑꢎꢆ
(I /IB=500mA/20mA)
C
.061
ꢇꢇꢇꢇꢇ
REF.
ꢆ
ꢂꢆ
ꢈꢆ
ꢄꢆ
ꢙꢆ
ꢝꢆ
ꢃꢆ
ꢞꢆ
ꢍꢎꢗꢒꢆ
ꢍꢕꢐꢎꢆ
ꢍꢕꢓꢘꢆ
ꢍꢎꢎꢑꢆ
ꢍꢕꢎꢐꢆ
ꢍꢕꢎꢗꢆ
ꢍꢕꢎꢗꢆ
ꢍꢕꢗꢗꢆ
ꢍꢎꢔꢗꢆ
ꢍꢕꢐꢓꢆ
ꢍꢎꢕꢕꢆ
ꢚꢚꢚꢚꢚꢆ
ꢍꢕꢎꢓꢆ
ꢍꢕꢘꢎꢆ
ꢍꢕꢎꢔꢆ
ꢍꢕꢔꢐꢆ
ꢐꢍꢓꢎꢆ
ꢕꢍꢑꢕꢆ
ꢘꢍꢐꢒꢆ
ꢐꢍꢕꢕꢆ
ꢕꢍꢐꢐꢆ
ꢕꢍꢐꢑꢆ
ꢕꢍꢐꢑꢆ
ꢎꢍꢒꢕꢆ
ꢒꢍ25ꢆ
ꢎꢍꢕꢕꢆ
ꢘꢍꢗꢒꢆ
ꢚꢚꢚꢚꢚꢆ
Transition Frequency
---
ꢆ
(VCE=10Vdc, I =50mAdc,
E
ꢆ
f=100MHz)
ꢌꢛꢜꢆ
ꢕꢍꢒꢑꢆ
ꢕꢍꢗꢐꢆ
ꢕꢍꢒꢎꢆ
ꢎꢍꢔꢕꢆ
ꢆ
ꢆ
ꢆ
ꢆ
C
ob
Output Capacitance
---
20
---
pF
(VCB=10Vdc, I =0, f=1.0MHz)
E
ꢆ
(1) Pw=20ms, duty=1/2
(2) When mounted on a 40x40x0.7mm ceramic board.
(3) Measured using pulse current
CLASSIFICATION OF hFE
Rank
Range
Marking
P
Q
R
82-180
120-270
180-390
DF
www.mccsemi.com
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Revision: A
2011/01/01
M C C
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel;1Kpcs/Reel
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Revision: A
2011/01/01
4
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