2SC4081-T [MCC]

Transistor;
2SC4081-T
型号: 2SC4081-T
厂家: Micro Commercial Components    Micro Commercial Components
描述:

Transistor

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2SC4081  
M C C  
2SC4081-A  
2SC4081-B  
2SC4081-C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
xꢀ Low Cob . Cob=2.0pF(Typ.)  
NPN Silicon  
Epitaxial Transistors  
xꢀ Complementary to 2SC1576A  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
x
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
Unit  
V
SOT-323  
A
60  
V
7
V
D
C
150  
200  
150  
mA  
mW  
к
PC  
Collector power dissipation  
Junction Temperature  
TJ  
C
B
TSTG  
Storage Temperature  
-55 to +150  
к
E
B
F
E
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
H
G
J
ICBO  
Collector Cutoff Current  
(VCB=-60Vdc)  
---  
---  
---  
---  
100  
100  
nAdc  
nAdc  
K
IEBO  
Emitter Cutoff Current  
(VEB=-6.0Vdc)  
DIMENSIONS  
INCHES  
ON CHARACTERISTICS  
MM  
BVCBO  
BVCEO  
BVEBO  
hFE  
Collector-base breakdown voltage  
(IC=-50µAdc )  
60  
---  
---  
Vdc  
Vdc  
Vdc  
---  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.079  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.012  
MAX  
.087  
.053  
.087  
MIN  
1.80  
1.15  
2.00  
MAX  
2.20  
1.35  
2.20  
NOTE  
Collector-emitter  
voltage (IC=-1µAdc)  
breakdown  
50  
6
---  
---  
---  
---  
---  
0.65Nominal  
1.20  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.30  
Emitter-base breakdown voltage  
(IE=-50µAdc)  
G
H
J
K
DC Current Gain  
(IC=-1mAdc, VCE=-6.0Vdc)  
120  
---  
560  
0.4  
3.5  
---  
Suggested Solder  
Pad Layout  
0.70  
VCE(sat)  
Collector Saturation Voltage*  
(IC=-50mAdc, IB=-5.0mAdc)  
---  
Vdc  
pF  
Cob  
Output Capacitance  
(VCB=-12.0Vdc, IE=0, f=1.0MHz)  
---  
2.0  
0.90  
fT  
Gain Bandwidth product  
(VCE=-12Vdc, IE=2mAdc,f=30MHz)  
---  
180  
MHz  
1.90  
h
FE CLASSIFICATION  
0.65  
Rank  
Marking  
hFE  
A
B
C
0.65  
BQ  
120~270  
BS  
270~560  
BR  
180~390  
www.mccsemi.com  
1 of 4  
Revision: 3  
2007/03/01  
M C C  
ꢁꢂꢃ4081  
TM  
Micro Commercial Components  
0.50mA  
100  
80  
50  
10  
Ta=25°C  
30µA  
V
CE=6V  
Ta=25°C  
27µA  
20  
10  
5
8
6
4
24µA  
21µA  
0.30mA  
0.25mA  
0.20mA  
0.15mA  
60  
18µA  
15µA  
12µA  
9µA  
C
°
2
1
100  
=
40  
Ta  
0.10mA  
0.05mA  
0.5  
6µA  
20  
0
2
0
3µA  
0.2  
0.1  
IB=0A  
I
B
=0A  
12  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
BASE TO EMITTER VOLTAGE : VBE (V)  
0
4
8
16  
20  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
COLLECTOR TO EMITTER VOLTAGE : VCE (V)  
Fig.2 Grounded emitter output  
Fig.3 Grounded emitter output  
Fig.1 Grounded emitter propagation  
characteristics  
characteristics ( Ι )  
characteristics ( ΙΙ )  
500  
500  
0.5  
Ta=25°C  
Ta=25°C  
VCE=5V  
Ta=100°C  
0.2  
25°C  
V
CE=5V  
3V  
1V  
200  
100  
50  
200  
100  
50  
55°C  
I
C/I  
B
=50  
20  
0.1  
10  
0.05  
0.02  
0.01  
20  
10  
20  
10  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
Fig.4 DC current gain vs.  
Fig.5 DC current gain vs.  
Fig. 6 Collector-emitter saturation  
voltage vs. collector current  
collector current ( Ι )  
collector current ( ΙΙ )  
0.5  
0.2  
0.5  
IC/IB=10  
IC/IB=50  
Ta=25°C  
V
CE=6V  
500  
200  
Ta=100°C  
25°C  
0.2  
0.1  
55°C  
Ta=100°C  
25°C  
0.1  
55°C  
0.05  
0.05  
0.02  
0.01  
100  
50  
0.02  
0.01  
0.2 0.5  
1
2
5
10 20 50 100 200  
(mA)  
0.2  
0.5  
1
2
5
10  
20  
50 100  
0.5 1  
2  
5 10 20  
50 100  
COLLECTOR CURRENT : I  
C
COLLECTOR CURRENT : I  
C
(mA)  
EMITTER CURRENT : I  
E
(mA)  
Fig.7 Collector-emitter saturation  
Fig.8 Collector-emitter saturation  
Fig.9 Gain bandwidth product vs.  
emitter current  
voltage vs. collector current ( Ι )  
voltage vs. collector current (ΙΙ)  
www.mccsemi.com  
2 of 4  
Revision: 3  
2007/03/01  
M C C  
ꢁꢂꢃ4081  
TM  
Micro Commercial Components  
20  
Ta=25°C  
Ta=25°C  
f=32MH  
Z
200  
100  
50  
f
I
I
=
1MHz  
=0A  
=0A  
V
CB=6V  
E
10  
5
C
2
1
20  
10  
0.2  
0.5  
1  
2  
5  
(mA)  
10  
0.2  
0.5  
1
2
5
10 20  
50  
EMITTER CURRENT : I  
E
COLLECTOR TO BASE VOLTAGE : VCB (V)  
EMITTER TO BASE VOLTAGE : VEB (V)  
Fig.11 Base-collector time constant  
vs. emitter current  
Fig.10 Collector output capacitance vs.  
collector-base voltage  
Emitter input capacitance vs.  
emitter-base voltage  
www.mccsemi.com  
3 of 4  
Revision: 3  
2007/03/01  
M C C  
TM  
Micro Commercial Components  
***IMPORTANT NOTICE***  
Micro Commercial Components Corp . reserves the right to make changes without further notice to any  
product herein to make corrections, modifications , enhancements , improvements , or other changes .  
Micro Commercial Components Corp . does not assume any liability arising out of the application or  
use of any product described herein; neither does it convey any license under its patent rights ,nor  
the rights of others . The user of products in such applications shall assume all risks of such use  
and will agree to hold Micro Commercial Components Corp . and all the companies whose  
products are represented on our website, harmless against all damages.  
***APPLICATIONS DISCLAIMER***  
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,  
Aerospace or Military Applications.  
www.mccsemi.com  
4 of 4  
Revision: 3  
2007/03/01  

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