2SC4081F [SECOS]

NPN Silicon General Purpose Transistor; NPN硅通用晶体管
2SC4081F
型号: 2SC4081F
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

NPN Silicon General Purpose Transistor
NPN硅通用晶体管

晶体 晶体管
文件: 总3页 (文件大小:499K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC4081F  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
Feature  
SOT-323  
·
Low Cob. Cob = 2.0 pF (Typ.)  
Dim  
A
B
C
D
G
H
J
Min  
Max  
·
Complements the 2SA1576A  
1.800 2.200  
1.150 1.350  
0.800 1.000  
0.300 0.400  
1.200 1.400  
0.000 0.100  
0.100 0.250  
0.350 0.500  
0.590 0.720  
2.000 2.400  
0.280 0.420  
A
L
COLLECTOR  
3
3
S
C
Top View  
B
1
2
1
BASE  
V
G
3
K
L
2
EMITTER  
1
S
2
H
J
D
Marking Code: 5BX  
X = hFE Rank Code  
K
V
All Dimension in mm  
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Ratings  
+150  
-55~+150  
60  
Unit  
ć
Tj  
ć
Tstg  
VCBO  
VCEO  
VEBO  
IC  
V
50  
V
7
V
150  
mA  
mW  
Total Power Dissipation  
PD  
225  
Characteristics at Ta = 25к  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Cutoff Current  
Collector Saturation Voltage 1  
DC Current Gain  
Symbol Min Typ. Max  
Unit  
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
ICBO  
60  
-
-
IC=50uA  
IC=1mA  
IE=50uA  
50  
-
-
V
7
-
-
V
-
-
100  
100  
400  
560  
-
nA  
nA  
mV  
-
VCB=60V  
VEB=7V  
IEBO  
-
-
-
VCE(sat)  
hFE  
-
IC=50mA, IB=5mA  
120  
-
VCE=6V, IC=1mA  
Gain-Bandwidth Product  
fT  
-
-
180  
2
MHz  
pF  
VCE=-12V, IC=2mA, f=100MHz  
VCB=-12V, f=1MHz, IE=0  
Output Capacitance  
Cob  
3.5  
*Pulse Test: Pulse Width = 380us, Duty Cycle 2%  
Classification of hFE  
Rank  
Q
R
S
Range  
120 - 270  
180 - 390  
270 - 560  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 3  
2SC4081F  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 3  
2SC4081F  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 3 of 3  

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