MAX5901ACEUT [MAXIM]

Analog IC ; 模拟IC\n
MAX5901ACEUT
型号: MAX5901ACEUT
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

Analog IC
模拟IC\n

模拟IC 光电二极管 信息通信管理
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19-1988; Rev 0; 3/01  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
General Description  
Features  
The MAX5900/MAX5901 are SOT23 hot-swap con-  
trollers that allow a circuit card to be safely hot-plugged  
into a live backplane without causing a glitch on the  
power-supply rail. These devices operate from -9V to  
-100V and provide the simplest hot-swap solution by  
eliminating all external components except an external  
N-channel MOSFET.  
o Wide -9V to -100V Operation  
o Requires No External Sense Resistor  
o Drives External N-Channel MOSFET  
o Limits Inrush Current  
o Circuit Breaker Function  
The MAX5900/MAX5901 limit the inrush current to the  
load and provide a circuit breaker function for overcur-  
rent protection. During startup the circuit breaker func-  
tion is disabled and the MAX5900/MAX5901 limit the  
inrush current by gradually turning on the external  
MOSFET. Once the external MOSFET is fully enhanced,  
the circuit breaker function is enabled and the  
MAX5900/MAX5901 provide overcurrent protection by  
monitoring the voltage drop across the external MOS-  
FET’s on-resistance.  
o Less than 1mA Quiescent Current  
o ON/OFF Input Permits Load Power-Supply  
Control and Sequencing  
o Adjustable Undervoltage Lockout  
o Power-Good Output with 100V Rating  
o Latching or Automatic Retry Fault Management  
o Thermal Shutdown Helps Protect the External  
The MAX5900/MAX5901 include an undervoltage lock-  
out (UVLO) function, ON/OFF control input, and a  
power-good status output, PGOOD (MAX5900) or  
PGOOD (MAX5901). A built-in thermal shutdown fea-  
ture is also included to protect the external MOSFET in  
case of overheating.  
MOSFET  
o Space-Saving SOT23-6 Package  
Ordering Information  
The MAX5900/MAX5901 offer latched or auto-retry fault  
management and are available with 200mV, 300mV or  
400mV circuit breaker thresholds. Both the MAX5900  
and MAX5901 are available in small SOT23 packages,  
and are specified for the extended -40°C to +85°C tem-  
perature range. For specific ordering information refer  
to the Selector Guide at the end of the data sheet.  
PART  
TEMP. RANGE  
-40°C to +85°C  
-40°C to +85°C  
PIN-PACKAGE  
6 SOT23  
MAX5900_ _EUT*  
MAX5901_ _EUT*  
6 SOT23  
*For specific part numbers see Selector Guide at end of data  
sheet.  
Applications  
Pin Configuration  
Telecom Line Cards Network Switches  
Network Routers  
Servers  
TOP VIEW  
Base Station Line  
Cards  
V
1
2
3
6
5
4
ON/OFF  
EE  
MAX5900  
MAX5901  
DRAIN  
GATE  
PGOOD (PGOOD)  
GND  
Typical Operating Circuits  
50W ISOLATED  
POWER SUPPLY  
BACKPLANE CIRCUIT CARD  
GND  
HOT-SWAP CONTROLLER  
V +  
I
SOT23-6  
( ) ARE FOR MAX5901 ONLY.  
LUCENT  
JW050A1  
MAX5900  
ON/OFF  
GND  
PGOOD  
DRAIN  
GATE  
ON/OFF  
V
V -  
I
EE  
Typical Operating Circuits continued at end of data sheet.  
-48V  
IRF540NS  
Simple Swapper is a trademark of Maxim Integrated Products Inc.  
FUSE  
________________________________________________________________ Maxim Integrated Products  
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at  
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
ABSOLUTE MAXIMUM RATINGS  
Terminal Voltage (with respect to GND unless otherwise noted)  
Continuous Power Dissipation at T = +70°C  
A
V , DRAIN, PGOOD, PGOOD ............................-120V to +0.3V  
EE  
6-Pin SOT23 (derate 9.1mW/°C above +70°C)..........727mW  
Maximum Junction Temperature .....................................+150°C  
Storage Temperature Range.............................-60°C to +150°C  
Lead Temperature .............................................................Note 1  
ON/OFF to V .........................................................-0.3V to +4V  
EE  
GATE to V ...........................................................-0.3V to +12V  
EE  
Current into any Pin ............................................................ 3mA  
Note 1: This device is constructed using a unique set of packaging techniques that impose a limit on the thermal profile the device  
can be exposed to during board level solder attach and rework. This limit permits only the use of solder profiles recom-  
mended in the industry standard specification, JEDEC 020A, paragraph 7.6, Table 3 for IR/VPR and convection reflow.  
Preheating is required. Hand or wave soldering is not allowed.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional  
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to  
absolute maximum rating conditions for extended periods may affect device reliability.  
ELECTRICAL CHARACTERISTICS  
(V = -9V to -100V, GND = 0, ON/OFF open circuit, T = -40°C to +85°C, unless otherwise noted. Typical values are at V = -48V  
EE  
A
EE  
and T = +25°C.) (Notes 2, 3)  
A
PARAMETER  
Supply Voltage  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
-9  
UNITS  
V
V
-100  
EE  
Supply Current  
I
Measured at GND  
0.5  
9.5  
10  
7
1.3  
mA  
GND  
V
V
V
= -36V to -72V  
= -100V  
7.5  
8
11.6  
11.6  
EE  
EE  
EE  
External Gate Drive  
V
V
- V  
EE  
V
GS  
GATE  
= -9V  
6
Load Voltage Slew Rate  
Magnitude  
SR  
| dV  
/dt |, C  
= 10µF, V = -9V to -36V  
4.5  
10  
17  
V/ms  
DRAIN  
LOAD  
EE  
Default UVLO  
V
|VEE| increasing  
-34.5  
-31.5  
3.5  
-28.5  
V
UVLO  
UVLO Hysteresis  
V
ON/OFF Input Resistance  
R
20  
32  
50  
kΩ  
kΩ  
ON/OFF  
DRAIN to V Resistance  
EE  
R
466  
DVEE  
ON/OFF Reference  
Threshold  
V
(V V ) increasing  
ON/OFF - EE  
1.14  
1.26  
1.38  
V
ON/OFF  
ON/OFF Hysteresis  
140  
300  
20  
mV  
ms  
ms  
Start Delay (Note 4)  
t
150  
9
500  
32  
ON  
ON/OFF Off Delay (Note 5)  
t
V
V
- V < 1V  
GATE EE  
OFF  
MAX590_ _AEUT  
MAX590_ _BEUT  
MAX590_ _CEUT  
170  
265  
365  
200  
300  
400  
1.5  
2.5  
4
240  
345  
455  
3
Circuit Breaker  
Threshold  
V
t
- V  
EE  
mV  
CB  
DRAIN  
C
C
C
= 1nF  
GATE  
GATE  
GATE  
(V  
until (V  
200mV overdrive step  
- V ) > V  
EE CB  
DRAIN  
Circuit Breaker Delay  
(Note 6)  
- V ) < 1V,  
EE  
= 4.7nF  
= 10nF  
4.5  
6
µs  
GATE  
CB  
Restart Delay (Note 4)  
t
After circuit breaker event, MAX590_ A_EUT only  
150  
300  
500  
ms  
RS  
2
_______________________________________________________________________________________  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
ELECTRICAL CHARACTERISTICS (continued)  
(V = -9V to -100V, GND = 0, ON/OFF open circuit, T = -40°C to +85°C, unless otherwise noted. Typical values are at V = -48V  
EE  
A
EE  
and T = +25°C.) (Notes 2, 3)  
A
PARAMETER  
SYMBOL  
CONDITIONS  
- V ; MAX590_A,  
MIN  
TYP  
MAX  
UNITS  
PGOOD (PGOOD)  
Assertion Threshold  
(Note 7)  
V
DRAIN  
EE  
V
V
0.75 V  
mV  
PG  
CB  
MAX590_L only  
PGOOD (PGOOD)  
Output Low Voltage  
MAX5900 V  
MAX5901 V  
- V , I = 1mA;  
PGOOD EE OL  
0.6  
0.2  
1.65  
10  
V
OL  
- V , I = 1mA  
EE OL  
PGOOD  
Power-Good Output Open-  
Drain Leakage Current  
V
V
- V = 100V (MAX5900)  
PGOOD EE  
I
µA  
°C  
°C  
OH  
- V = 100V (MAX5901)  
EE  
PGOOD  
Thermal Shutdown  
Temperature  
T
SD  
T
HY  
Junction temperature  
+125  
15  
Thermal Shutdown  
Hysteresis  
Note 2: All currents into device pins are positive, all currents out of device pins are negative, and all voltages are referenced to  
GND, unless otherwise noted.  
Note 3: All specifications are 100% tested at T = +25°C. Specifications over -40°C to +85°C are guaranteed by characterization.  
A
Note 4: This is the delay time from a valid on condition until V begins rising. Valid on conditions are: the device is not in undervolt-  
GS  
age lockout; ON/OFF is not driven low; and the device is not in thermal shutdown.  
Note 5: This is the delay from a valid low on ON/OFF until V falls. Pulses on ON/OFF less than t  
are ignored, offering glitch  
GS  
OFF  
immunity.  
Note 6: Guaranteed by design, not production tested.  
Note 7: For a detailed description see the Power-Good Output section of the data sheet.  
Typical Operating Characteristics  
(V = -48V, GND = 0, and T = +25°C, unless otherwise noted. See Figure 6 for test circuits.)  
EE  
A
DEFAULT UNDERVOLTAGE LOCKOUT  
SUPPLY CURRENT  
vs.INPUT VOLTAGE  
SUPPLY CURRENT  
vs. TEMPERATURE  
vs. TEMPERATURE  
-25.5  
-26.5  
-27.5  
-28.5  
-29.5  
-30.5  
-31.5  
-32.5  
-33.5  
-34.5  
-35.5  
-36.5  
-37.5  
0.90  
0.85  
0.80  
0.75  
0.70  
0.65  
0.60  
0.55  
1.1  
100kFROM ON/OFF TO GND  
V
= -72V  
DECREASING |V  
|
EE  
EE  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
EE  
= -48V  
= -12V  
V
EE  
INCREASING |V  
|
EE  
125  
-50 -25  
0
25  
50  
75 100  
-100  
-80  
-60  
-40  
-20  
0
-50 -25  
0
25  
50  
75 100 125  
TEMPERATURE (°C)  
INPUT VOLTAGE (V)  
TEMPERATURE (°C)  
_______________________________________________________________________________________  
3
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Typical Operating Characteristics (continued)  
(V = -48V, GND = 0, and T = +25°C, unless otherwise noted. See Figure 6 for test circuits.)  
EE  
A
GATE DRIVE VOLTAGE  
vs. INPUT VOLTAGE  
RESTART DELAY  
vs. TEMPERATURE  
STARTUP WAVEFORMS  
R = 90, C = 100µF  
L
L
11.0  
450  
400  
350  
300  
250  
200  
150  
10.5  
10.0  
9.5  
9.0  
8.5  
8.0  
7.5  
7.0  
A
0
0
B
0
C
0
D
40ms/div  
-100  
-80  
-60  
-40  
-20  
0
-50 -25  
0
25  
50  
75 100 125  
A: V , 5V/div  
IN  
C: V , 50V/div  
EE  
GS  
INPUT VOLTAGE (V)  
TEMPERATURE (°C)  
B: I , 1A/div  
D: V  
, 40V/div  
DRAIN  
STARTUP WAVEFORMS  
STARTUP WAVEFORMS  
STARTUP WAVEFORMS  
R = OPEN, C = 10µF  
R = 40, C = 10µF  
L
L
R = 40, C = 100µF  
L
L
L
L
A
A
A
0
0
0
0
B
0
0
B
B
0
C
0
C
0
C
0
D
0
D
0
D
5ms/div  
5ms/div  
5ms/div  
A: V , 10V/div  
IN  
GS  
A: V , 10V/div  
GS  
IN  
C:V , 50V/div  
OUT  
D: PGOOD, 50V/div  
A: V , 10V/div  
GS  
IN  
C:V , 50V/div  
OUT  
D: PGOOD, 50V/div  
B: I , 200mA/div  
B: I , 1A/div  
B: I , 1A/div  
C:V , 50V/div  
OUT  
D: PGOOD, 50V/div  
CIRCUIT BREAKER EVENT  
= 1000pF, V = 200mV)  
CIRCUIT BREAKER EVENT  
= 1000pF, V = 20mV)  
(C  
(C  
GATE  
OVERDRIVE  
SLEW RATE vs. V  
GATE  
OVERDRIVE  
EE  
12  
T
A
= +120°C  
11  
10  
9
A
0
A
0
B
0
B
0
T
A
= +25°C  
0
8
C
0
C
T
A
= -40°C  
7
6
2µs/div  
2µs/div  
-100  
-80  
-60  
-40  
-20  
0
A: PGOOD, 50V/div  
A: PGOOD, 50V/div  
DS  
C:V , 10V/div  
GS  
B:V , 0.5V/div  
B:V , 0.5V/div  
DS  
V
(V)  
EE  
C:V , 10V/div  
GS  
4
_______________________________________________________________________________________  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Pin Description  
PIN  
NAME  
FUNCTION  
MAX5900  
MAX5901  
Negative Supply Voltage Input and External N-Channel MOSFET Source  
Connection  
1
1
V
EE  
Drain Sense Input for External N-Channel MOSFET. Connect DRAIN as close as  
possible to the MOSFETs drain and use wide circuit traces to assure good  
thermal coupling between the MAX5900/MAX5901 and the MOSFET. See Layout  
Guidelines.  
2
2
DRAIN  
3
4
3
4
GATE  
GND  
Gate Drive Output for External N-Channel MOSFET  
Ground Connection  
Power-Good Output. PGOOD is an N-channel, open-drain, active-high output,  
5
PGOOD  
referenced to V  
.
EE  
Power-Good Output. PGOOD is an N-channel, open-drain, active-low output,  
referenced to V  
5
PGOOD  
.
EE  
ON/OFF Control Input. ON/OFF is referenced to V . Drive ON/OFF above 1.38V or  
EE  
leave unconnected to enable the device. Drive ON/OFF below 1V to disable the  
device. ON/OFF is also used to adjust the undervoltage lockout (UVLO) threshold. See  
Undervoltage Lockout in the Applications section of this data sheet. Internally clamped  
to nominally 3V through a 1kresistor (see Figure 1).  
6
6
ON/OFF  
Detailed Description  
The MAX5900/MAX5901 are integrated hot-swap con-  
troller ICs contained in 6-pin SOT23 packages. They  
allow a board to be safely hot-plugged into a live back-  
plane without causing a glitch on the power-supply rail.  
They are well suited for -48V telecom power systems  
allowing cost-effective, simple, and compact design.  
The MAX5900/MAX5901 operate from -9V to -100V to  
cover the standard telecom voltage range, and to serve  
more generalized applications. These devices require  
only an external N-channel power MOSFET to provide  
hot-swap control. Figure 1 shows a functional diagram  
of the MAX5900/MAX5901.  
MAX5900  
MAX5901  
GND  
828k*  
ON/OFF  
CONTROL  
LOGIC  
1k*  
34.5k*  
PGOOD  
(PGOOD)  
3V  
N
The MAX5900/MAX5901 control an external N-channel  
power MOSFET placed in the negative power-supply  
pathway. When power is first applied, the MAX5900/  
MAX5901 keep the MOSFET turned off. The  
MAX5900/MAX5901 hold the MOSFET off indefinitely if  
ON/OFF is held low, if the supply voltage is below the  
undervoltage lockout level, or if the die temperature  
exceeds +125°C. If none of these conditions exist for  
300ms (typ), the MAX5900/MAX5901 begin to gradually  
turn on the MOSFET. During this turn-on phase, the  
MAX5900/MAX5901 slowly enhance the MOSFET,  
allowing the voltage on the load, i.e. the drain of the  
V
EE  
V
EE  
V
EE  
466k*  
GATE  
( ) ARE FOR THE MAX5901 ONLY  
* RELATIVE TOLERANCE 1%, ABSOLUTE TOLERANCE 20% TYPICAL  
DRAIN  
Figure 1. Functional Diagram  
_______________________________________________________________________________________  
5
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
MOSFET, to fall no faster than 10V/ms (typ). The inrush  
current to the load is thus limited to a level proportional  
to the load capacitance, and the constant load voltage  
slew rate. After the MOSFET is fully enhanced, and the  
load voltage is settled to its final value, the MAX5900A/  
MAX5901A and MAX5900L/MAX5901L monitor the volt-  
fully enhanced. Three threshold voltage options are  
available200mV, 300mV, and 400mV. One version is  
available with no circuit breaker function. Circuit break-  
er fault management for the MAX5900/MAX5901 is  
offered with two different configurationslatched and  
automatic retry.  
age drop from the MOSFETs drain-to-source (V ). If  
DS  
Latched Circuit Breaker  
After a circuit breaker trip event, the latched  
versions (MAX5900L/MAX5901L) drive GATE to  
the voltage drop exceeds 75% of the circuit breaker  
threshold the MAX5900A/MAX5901A or MAX5900L/  
MAX5901L turn off the MOSFET, disconnecting the  
load immediately. Because the circuit breaker function  
is not activated until the MOSFET is fully enhanced, it  
takes approximately 10ms for the MAX5900A/  
MAX5901A or MAX5900L/MAX5901L to react to an out-  
put short circuit at startup. If no circuit breaker fault  
exists, the power-good output is asserted. Then, if any  
of four conditions exist, the power-good output  
deasserts and the MOSFET is turned off . The four con-  
ditions are: the voltage across the MOSFET exceeds  
the circuit breaker threshold; the supply voltage magni-  
tude falls below the undervoltage lockout level; the die  
temperature exceeds +125°C; or ON/OFF is forced low.  
After a circuit breaker fault, the MAX5900L/MAX5901L  
keep the MOSFET off until the power is cycled, or the  
part is reset by toggling ON/OFF low for at least 20ms  
(typ). After a circuit breaker fault, the MAX5900A/  
MAX5901A automatically restart in 300ms (typ). All ver-  
sions automatically restart after a thermal fault, or an  
undervoltage shutdown, if the fault condition goes away  
for at least 300ms (typ).  
V
, turning off the external MOSFET, and PGOOD  
EE  
(PGOOD) is deasserted. A latched-off condition  
needs to be reset by toggling ON/OFF low for at  
least 20ms, or by cycling the power supply, V  
.
EE  
Automatic Retry Circuit Breaker  
After a circuit breaker trip event the automatic retry  
versions (MAX5900A/MAX5901A) drive GATE to V  
,
EE  
turning off the external MOSFET, and PGOOD  
(PGOOD) is deasserted. If the start conditions are met  
for a full 300ms (t ) the start sequence is initiated. The  
RS  
start conditions are: the device is not in UVLO; ON/OFF  
is not driven low; and the device is not in thermal shut-  
down.  
No Circuit Breaker  
For the versions without a circuit breaker, MAX5900N  
(MAX5901N), PGOOD (PGOOD) is asserted when the  
MOSFET is fully enhanced. Once powered up, the  
MAX5900N/MAX5901N ignore the MOSFET drain-to-  
source voltage (V ) for applications where a circuit  
DS  
breaker function is not desired.  
ON/OFF offers external control of the MAX5900/  
MAX5901, facilitating power-supply sequencing, and  
may also be used to change the undervoltage lockout  
level. Undervoltage lockout keeps the external MOSFET  
switched off as long as the magnitude of the input volt-  
age is below the desired level.  
Applications Information  
ON/OFF Control Input  
The ON/OFF control input provides three hot-swap  
functions: external ON/OFF control; setting of the UVLO  
level; and resetting after a circuit breaker event has  
caused the MAX5900L/MAX5901L to turn off the exter-  
A power-good output, PGOOD (MAX5900) or PGOOD  
(MAX5901), asserts when the external MOSFET is fully  
enhanced and the drain-source voltage is at least 25%  
below the circuit breaker threshold. PGOOD and  
nal MOSFET. Pulling ON/OFF to V for at least 20ms  
EE  
(t  
) forces the MAX5900/MAX5901 to turn off the  
OFF  
external MOSFET (see Figure 2 for a circuit example).  
To reset the MAX5900L/MAX5901L after a circuit break-  
PGOOD are open-drain outputs referenced to V , and  
EE  
can withstand up to 100V above V  
.
EE  
er event, toggle ON/OFF to V for at least 20ms (t  
).  
EE  
OFF  
A thermal shutdown feature protects the external MOS-  
FET by turning it off if the die temperature of the  
MAX5900/MAX5901 exceeds +125°C. The MAX5900/  
MAX5901 must be in good thermal contact with the  
external MOSFET. See Layout Guidelines in the Appli-  
cations section of the data sheet.  
ON/OFF can be used to sequence power supplies.  
Connecting a capacitor from ON/OFF to V will delay  
EE  
the rise of ON/OFF proportional to the capacitance and  
input impedance of ON/OFF, typically 32k(Figure 3).  
A circuit breaker function monitors the voltage across  
the external MOSFET, V , and turns off the MOSFET if  
DS  
V
exceeds the circuit breaker threshold, V . The  
circuit breaker function is enabled after the MOSFET is  
DS  
CB  
6
_______________________________________________________________________________________  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Thermal Shutdown  
HOT-SWAP CONTROLLER  
A thermal shutdown feature helps protect the external  
MOSFET. If the die temperature of the MAX5900/  
GND  
MAX5900  
MAX5901  
MAX5901 exceeds +125°C, the MOSFET is turned off.  
OPTIONAL  
R2  
47k  
For accurate performance the MAX5900/MAX5901  
ON/OFF  
GND  
must be in close thermal contact with the external MOS-  
FET. See Layout Guidelines for information. Due to the  
low power dissipation of the MAX5900/MAX5901, the  
junction temperature will typically be within a few  
degrees of the MOSFET. All versions of the MAX5900/  
MAX5901 automatically restart from a temperature fault  
when the junction temperature drops below +110°C.  
ON/OFF  
V
EE  
R1  
3kΩ  
DGND  
-48V  
Figure 2. Programmed -20V Lockout, with Optional Optocoupler  
On/Off Control  
Undervoltage Lockout  
The MAX5900/MAX5901 turn off the external MOSFET if  
the magnitude of the input voltage is below the level set  
HOT-SWAP CONTROLLER #1  
by ON/OFF for longer than 20ms (t  
). If ON/OFF is  
OFF  
left unconnected, the lockout voltage (V  
) defaults  
UVLO  
GND  
MAX5900  
MAX5901  
to -31.5V. V  
may also be set to any value within  
UVLO  
GND  
ON/OFF  
the power-supply range by using external resistors. To  
set the lockout voltage to a value between -9V and  
-100V use a resistor-divider connected between GND  
C
V
EE  
and V , with the center node of the divider connected  
EE  
to ON/OFF. For example, use a 3kresistor (R1 in  
Figure 2) from ON/OFF to V and calculate the other  
EE  
resistor, R2, using:  
HOT-SWAP CONTROLLER #2  
|V  
1.26  
|
MAX5900  
MAX5901  
UVLO  
R2 = R1 ×  
1  
GND  
ON/OFF  
where V  
ON/OFF  
is the desired lockout voltage, and  
UVLO  
2C  
V
EE  
V
is the ON/OFF reference threshold specified in  
the Electrical Characteristics table (typically 1.26V).  
V
EE  
Figure 2 shows an example circuit with V set for  
UVLO  
-20V. To defeat the UVLO simply connect a single  
100kresistor between ON/OFF and GND, as shown in  
Figure 4.  
Figure 3. Power-Supply Sequencing  
Turn-On and Turn-Off Delays  
After power is applied, or ON/OFF is released, there is  
HOT-SWAP CONTROLLER  
a 300ms delay (t ) before the gate ramp is started.  
ON  
This delay is also the automatic restart time delay.  
GND  
MAX5900  
MAX5901  
In the event of a circuit breaker condition or an over-  
temperature fault condition, the turn-off delay is less  
than 2µs. An undervoltage condition must exist for at  
100k  
GND  
least 20ms (t  
) before the MAX5900/MAX5901 turn  
OFF  
ON/OFF  
off the external MOSFET. ON/OFF must be held low for  
at least 20ms (t ) before the MAX5900/MAX5901 turn  
V
EE  
OFF  
off the external MOSFET. Turn-off delay minimizes spu-  
rious shutdowns due to noisy signals or momentary  
voltage spikes, as well as preventing accidental reset-  
ting of the circuit breaker latch (MAX5900L/MAX5901L).  
-48V  
Figure 4. Defeating Undervoltage Lockout  
_______________________________________________________________________________________  
7
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
parameters. Using this method to choose a circuit  
Power-Good Output  
The power-good output, PGOOD (PGOOD), is open-  
drain and asserts when the external MOSFET is fully  
breaker threshold allows the circuit to operate under  
worst-case conditions without causing a circuit  
breaker fault, but the circuit breaker function will still  
operate if a short-circuit or gross overcurrent condition  
occurs. See Table 1 for MOSFET suggestions. The  
MAX5900N/MAX5901N have no circuit breaker func-  
tion. For these parts choose an external MOSFET that  
meets the load requirements.  
enhanced and V  
is less than V  
(75% of the circuit  
PG  
DS  
breaker threshold, V ). For versions without the circuit  
CB  
breaker function (MAX5900N/MAX5901N), PGOOD  
(PGOOD) asserts when the external MOSFET is fully  
enhanced.  
PGOOD (PGOOD) deasserts within 2µs when a circuit  
breaker event occurs or if the die temperature exceeds  
Determining Inrush Current  
Determining a circuits inrush current is necessary to  
help choose the proper MOSFET. The MAX5900/  
MAX5901 regulate the inrush current by means of con-  
trolling the load voltage slew rate, but inrush current is  
also a function of load capacitance. Determine inrush  
current using:  
+125°C. PGOOD (PGOOD) deasserts if |V | < |V  
|
EE  
UVLO  
for longer than 20ms or ON/OFF is held low for longer  
than 20ms.  
The MAX5900 PGOOD is active-low and the MAX5901  
PGOOD is active-high. Both are open-drain N-channel  
MOSFETs with their sources connected to V , and can  
EE  
withstand up to 100V.  
dV  
dt  
Selecting a Circuit Breaker Threshold  
The MAX5900A/MAX5901A and the MAX5900L/  
MAX5901L offer a circuit breaker function to protect the  
external MOSFET and the load from the potentially  
damaging effects of excessive current. As load current  
I = C  
= C × SR  
where C is the load capacitance, and SR is the  
MAX5900/MAX5901 Load Voltage Slew Rate Magnitude  
from the Electrical Characteristics table. For example,  
assuming a load capacitance of 100µF, and using the  
typical value of 10V/ms for the slew rate, the inrush cur-  
rent is 1A typical.  
flows through the external MOSFET, a voltage, V , is  
DS  
generated from drain to source due to the MOSFETs  
on-resistance, R  
. The MAX5900A/MAX5901A  
DS(ON)  
and MAX5900L/MAX5901L monitor V when the exter-  
DS  
If the maximum possible Load Voltage Slew Rate is  
used, the maximum inrush current calculates to 1.7A.  
Choose a MOSFET with a maximum pulsed current  
specification that exceeds the maximum inrush current.  
nal MOSFET is fully enhanced. If V  
exceeds the cir-  
DS  
cuit breaker threshold, the external MOSFET is turned  
off and PGOOD (PGOOD) is deasserted.  
To accommodate different MOSFETs and different load  
currents, the MAX5900/MAX5901 are available with cir-  
cuit breaker threshold voltages of 200mV, 300mV, and  
400mV.  
Suggested External MOSFETs  
The circuit breaker function is intended to disconnect  
the load if a gross overcurrent or short-circuit condition  
occurs. For calculating the circuit breaker threshold use  
SUGGESTED  
MAXIMUM  
(A)  
SUGGESTED  
MAXIM PART  
EXTERNAL  
MOSFET  
I
LOAD  
the MOSFETs R  
at the worst possible operating con-  
ON  
dition, and add a 25% overcurrent margin to the maxi-  
mum circuit current. For instance, if a MOSFET has an  
0.25  
IRFL110  
IRFL4310  
IRFR3910  
IRF540NS  
IRF1310NS  
IRF1310NS  
MAX590_ _CEUT  
MAX590_ _BEUT  
MAX590_ _CEUT  
MAX590_ _BEUT  
MAX590_ _BEUT  
MAX590_ _CEUT  
0.5  
R
of 0.06at T = +25°C, and a normalized on-  
ON  
A
resistance factor of 1.75 at T = +130°C (from the  
1
A
MOSFET data sheet), the R  
used for calculation is  
ON  
2
the product of these two numbers, or (0.06) x (1.75) =  
0.105. Then, if the maximum current is expected to be  
2A, using a 25% margin, the current for calculation is  
(2A) x (1.25) = 2.5A. The resulting minimum circuit  
breaker threshold is then the product of these  
two results, or (0.105) x (2.5A) = 0.263V. The next  
highest minimum available threshold is 0.265V of the  
MAX590_ _BEUT, which is an ideal choice given these  
3
4
V
IN  
= -9V to -90V  
8
_______________________________________________________________________________________  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Layout Guidelines  
Good thermal contact between the MAX5900/  
MAX5901 and the external MOSFET is essential for the  
GROUND  
thermal shutdown feature to operate effectively. Place  
U1  
the MAX5900/MAX5901 as close as possible to the  
SOT23-6  
MAX5900/MAX5901  
drain of the external MOSFET, and use wide circuit  
board traces for good heat transfer. See Figure 5 for an  
example of a PC board layout.  
POWER IN  
S
D G  
M1  
SOT-223  
POWER  
OUT  
Chip Information  
TRANSISTOR COUNT: 678  
Figure 5. Circuit Board Layout Example.  
PROCESS TECHNOLOGY: BiCMOS  
GND  
GND  
100k  
100µF  
+
V
MAX5900  
MAX5901  
50kΩ  
+
-
V
IN  
V
MAX5900  
MAX5901  
PGOOD  
ON/OFF  
V
IN  
V
-
PGOOD  
ON/OFF  
(PGOOD)  
(PGOOD)  
V
EE  
GATE DRAIN  
V
EE  
GATE DRAIN  
(a) SUPPLY CURRENT  
(b) V  
UVLO  
GND  
GND  
100kΩ  
+
-
MAX5900A  
MAX5901A  
48V  
+
PGOOD  
ON/OFF  
MAX5900  
MAX5901  
V
IN  
V
PGOOD  
(PGOOD)  
ON/OFF  
V
-
(PGOOD)  
V
GATE DRAIN  
SCOPE  
EE  
GATE DRAIN  
EE  
V
SCOPE  
50kΩ  
(c) GATE DRIVE VOLTAGE  
(d) RETRY TIMEOUT  
GND  
GND  
50kΩ  
50kΩ  
R
L
+
C
L
MAX5900  
MAX5901  
+
-
48V  
-
PGOOD  
MAX5900  
MAX5901  
ON/OFF  
48V  
PGOOD  
(PGOOD)  
ON/OFF  
V
SCOPE  
(PGOOD)  
V
EE  
GATE DRAIN  
SCOPE  
GATE DRAIN  
SCOPE  
EE  
SCOPE  
SCOPE  
SCOPE  
SCOPE  
SCOPE  
50kΩ  
(e) TURN-ON WAVEFORMS  
(f) CIRCUIT BREAKER EVENT  
Figure 6. Test Circuits  
_______________________________________________________________________________________  
9
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Selector Guide  
CIRCUIT BREAKER  
FUNCTION  
CIRCUIT BREAKER  
THRESHOLD  
POWER-GOOD  
OUTPUT LOGIC  
PART  
TOP MARK  
AAQV  
AAQJ  
AAQK  
AAQL  
AAQM  
AAQN  
AAQO  
AAQW  
AAQP  
AAQQ  
AAQR  
AAQS  
AAQT  
AAQU  
MAX5900NNEUT*  
MAX5900AAEUT*†  
MAX5900ABEUT*  
MAX5900ACEUT*†  
MAX5900LAEUT*†  
MAX5900LBEUT*  
MAX5900LCEUT*  
MAX5901NNEUT*  
MAX5901AAEUT*  
MAX5901ABEUT*†  
MAX5901ACEUT*†  
MAX5901LAEUT*†  
MAX5901LBEUT*  
MAX5901LCEUT*†  
None  
None  
200mV  
300mV  
400mV  
200mV  
300mV  
400mV  
None  
Active-Low  
Active-Low  
Active-Low  
Active-Low  
Active-Low  
Active-Low  
Active-Low  
Active-High  
Active-High  
Active-High  
Active-High  
Active-High  
Active-High  
Active-High  
Auto Retry  
Auto Retry  
Auto Retry  
Latched  
Latched  
Latched  
None  
Auto Retry  
Auto Retry  
Auto Retry  
Latched  
Latched  
Latched  
200mV  
300mV  
400mV  
200mV  
300mV  
400mV  
*Requires special solder temperature profile described in the Absolute Maximum Ratings section.  
Future productcontact factory for availability.  
Typical Operating Circuits (Continued)  
50W ISOLATED  
POWER SUPPLY  
BACKPLANE CIRCUIT CARD  
GND  
HOT-SWAP CONTROLLER  
V+  
MAX5901  
1MΩ  
39kΩ  
MAX5003*  
INDIV  
GND  
ON/OFF  
PGOOD  
DRAIN  
GATE  
V
EE  
GND  
-48V  
IRF540NS  
FUSE  
* MAX5003 IS A 110V PWM CONTROLLER  
10 ______________________________________________________________________________________  
-100V SOT23 Simple Swapper Hot-Swap  
Controllers  
Package Information  
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are  
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.  
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11  
© 2001 Maxim Integrated Products  
Printed USA  
is a registered trademark of Maxim Integrated Products.  

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