MAX5901ACEUT-T [MAXIM]
-100V, SOT23/TDFN, Simple Swapper Hot-Swap Controllers; -100V ， SOT23 / TDFN封装，简单被囚热插拔控制器
| 型号： | MAX5901ACEUT-T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | -100V, SOT23/TDFN, Simple Swapper Hot-Swap Controllers |
| 文件： | 总14页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-2077; Rev 5; 1/07
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
General Description
Features
♦ Wide -9V to -100V Operation
♦ Requires No External Sense Resistor
♦ Drives External N-Channel MOSFET
♦ Limits Inrush Current
The MAX5900/MAX5901 are SOT23/TDFN hot-swap con-
trollers that allow a circuit card to be safely hot-plugged
into a live backplane without causing a glitch on
the power-supply rail. These devices operate from -9V to
-100V and provide the simplest hot-swap solution by
eliminating all external components except an external
n-channel MOSFET.
♦ Circuit-Breaker Function
♦ Less than 1mA Quiescent Current
The MAX5900/MAX5901 limit the inrush current to the
load and provide a circuit-breaker function for overcurrent
protection. During startup, the circuit-breaker function is
disabled and the MAX5900/MAX5901 limit the inrush cur-
rent by gradually turning on the external MOSFET. Once
the external MOSFET is fully enhanced, the circuit-break-
er function is enabled and the MAX5900/MAX5901 pro-
vide overcurrent protection by monitoring the voltage
drop across the external MOSFET’s on-resistance.
♦ ON/OFF Input Permits Load Power-Supply
Control and Sequencing
♦ Adjustable Undervoltage Lockout
♦ Power-Good Output with 100V Rating
♦ Latching or Automatic Retry Fault Management
♦ Thermal Shutdown Helps Protect the External
MOSFET
♦ Space-Saving 6-Pin SOT23 and TDFN Packages
The MAX5900/MAX5901 include an undervoltage lock-
out (UVLO) function, ON/OFF control input, and a power-
good status output, PGOOD (MAX5900) or PGOOD
(MAX5901). A built-in thermal shutdown feature is also
included to protect the external MOSFET in case of over-
heating.
Ordering Information
PIN-
PACKAGE
PKG
CODE
PART
TEMP RANGE
MAX5900_ _EUT+T* -40°C to +85°C 6 SOT23-6
U6F-6
The MAX5900/MAX5901 offer latched or autoretry fault
management and are available with 200mV, 300mV, or
400mV circuit-breaker thresholds. Both the MAX5900 and
MAX5901 are available in small SOT23 and TDFN pack-
ages, and are specified for the extended -40°C to +85°C
temperature range. For specific ordering information see
the Selector Guide at the end of the data sheet.
MAX5900_ _ETT+T* -40°C to +85°C 6 TDFN-EP** T633-2
MAX5901_ _EUT+T* -40°C to +85°C 6 SOT23-6 U6F-6
MAX5901_ _ETT+T* -40°C to +85°C 6 TDFN-EP** T633-2
*For specific part numbers, see Selector Guide at end of data
sheet.
+Denotes lead-free package.
**EP = Exposed pad.
_________________________Applications
Telecom Line Cards
Network Switches
Pin Configurations
Network Routers
Servers
Base-Station Line
Cards
TOP VIEW
Typical Operating Circuits
V
1
2
3
6
5
4
ON/OFF
EE
50W ISOLATED
POWER SUPPLY
MAX5900
MAX5901
BACKPLANE
GND
CIRCUIT CARD
DRAIN
GATE
PGOOD (PGOOD)
GND
HOT-SWAP CONTROLLER
V +
1
LUCENT
MAX5900
JWO50A1
ON/OFF
GND
PGOOD
DRAIN
GATE
SOT23
ON/OFF
( ) ARE FOR MAX5901 ONLY.
V
EE
V -
1
Pin Configurations continued at end of data sheet.
-48V
Typical Operating Circuits continued at end of data sheet.
IRF540NS
FUSE
Simple Swapper is a trademark of Maxim Integrated Products, Inc.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
ABSOLUTE MAXIMUM RATINGS
Terminal Voltage (with respect to GND, unless otherwise noted)
Continuous Power Dissipation (T = +70°C)
A
V
DRAIN, PGOOD, PGOOD ............................-120V to +0.3V
6-Pin SOT23 (derate 9.1mW/°C above +70°C)...........727mW
6-Pin TDFN (derate 18.2mW/°C above +70°C) ........1454mW
EE,
ON/OFF to V .........................................................-0.3V to +4V
EE
GATE to V
......................................................... -0.3V to +12V
Junction to Case Thermal Resistance, θ (TDFN) ........8.5°C/W
EE
JC
Current into Any Pin............................................................ 3mA
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range.............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
EE
(V = -9V to -100V, GND = 0V, ON/OFF open circuit, T = -40°C to +85°C, unless otherwise noted. Typical values are at V = -48V
A
EE
and T = +25°C.) (Notes 1, 2)
A
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
MAX
-9
UNITS
V
-100
V
EE
Supply Current
I
Measured at GND
0.5
9.5
10
7
1.3
mA
GND
V
V
V
= -36V to -72V
= -100V
7.5
8
11.6
11.6
EE
EE
EE
External Gate Drive
V
V
- V
EE
V
GS
GATE
= -9V
6
Load Voltage Slew-Rate
Magnitude
SR
| dV
/dt |, C
= 10µF, V = -9V to -36V
4.5
10
17
V/ms
DRAIN
LOAD
EE
Default UVLO
V
|V | increasing
EE
-34.5
-31.5
3.5
-28.5
V
UVLO
UVLO Hysteresis
V
ON/OFF Input Resistance
R
20
32
50
kΩ
kΩ
ON/OFF
Drain to V Resistance
EE
R
466
DVEE
ON/OFF Reference
Threshold
V
(V
ON/OFF
- V ) increasing
1.14
1.26
1.38
V
ON/OFF
EE
ON/OFF Hysteresis
140
300
20
mV
ms
ms
Start Delay (Note 3)
t
150
9
500
32
ON
ON/OFF Off Delay (Note 4)
t
V
V
- V < 1V
EE
OFF
GATE
MAX590_ _AEUT
MAX590_ _BEUT
MAX590_ _CEUT
170
265
365
200
300
400
1.5
240
345
455
3
Circuit-Breaker
Threshold
V
- V
EE
mV
CB
DRAIN
(V
until (V
1V, 200mV overdrive
step
- V ) > V
EE CB
DRAIN
C
C
C
= 1nF
GATE
GATE
GATE
Circuit-Breaker Delay
(Note 5)
- V ) <
GATE EE
t
= 4.7nF
= 10nF
2.5
4
4.5
6
µs
CB
Restart Delay (Note 3)
t
After circuit-breaker event, MAX590_A_EUT only
150
300
500
ms
RS
2
_______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
ELECTRICAL CHARACTERISTICS (continued)
(V = -9V to -100V, GND = 0V, ON/OFF open circuit, T = -40°C to +85°C, unless otherwise noted. Typical values are at V = -48V
EE
A
EE
and T = +25°C.) (Notes 1, 2)
A
PARAMETER
SYMBOL
CONDITIONS
- V ; MAX590_A,
MIN
TYP
MAX
UNITS
PGOOD (PGOOD)
Assertion Threshold
(Note 6)
V
DRAIN
EE
V
V
0.75 ✕ V
mV
PG
CB
MAX590_L only
PGOOD (PGOOD)
Output Low Voltage
MAX5900, V - V , I = 1mA;
PGOOD EE OL
0.6
0.2
1.65
10
V
OL
MAX5901, V
- V , I = 1mA
EE OL
PGOOD
Power-Good Output Open-
Drain Leakage Current
V
V
- V = 100V (MAX5900);
PGOOD EE
I
µA
°C
°C
OH
- V = 100V (MAX5901)
PGOOD
EE
Thermal Shutdown
Temperature
T
Junction temperature
+125
15
SD
HY
Thermal Shutdown
Hysteresis
T
Note 1: All currents into device pins are positive, all currents out of device pins are negative, and all voltages are referenced to
GND, unless otherwise noted.
Note 2: All specifications are 100% tested at T = +25°C. Specifications over -40°C to +85°C are guaranteed by characterization.
A
Note 3: This is the delay time from a valid on condition until V begins rising. Valid on conditions are: the device is not in undervolt-
GS
age lockout; ON/OFF is not driven low; and the device is not in thermal shutdown.
Note 4: This is the delay from a valid low on ON/OFF until V falls. Pulses on ON/OFF less than t
are ignored, offering glitch
OFF
GS
immunity.
Note 5: Guaranteed by design, not production tested.
Note 6: For a detailed description, see the Power-Good Output section.
Typical Operating Characteristics
(V = -48V, GND = 0V, and T = +25°C, unless otherwise noted. See Figure 6 for test circuits.)
EE
A
SUPPLY CURRENT
vs. INPUT VOLTAGE
DEFAULT UNDERVOLTAGE LOCKOUT
SUPPLY CURRENT vs. TEMPERATURE
vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-25.5
-26.5
-27.5
-28.5
-29.5
-30.5
-31.5
-32.5
-33.5
-34.5
-35.5
-36.5
-37.5
0.90
0.85
0.80
0.75
0.70
0.65
0.60
0.55
100kΩ FROM ON/OFF TO GND
V
= -75V
DECREASING |V |
EE
EE
V
= -48V
EE
V
= -12V
EE
INCREASING |V
|
EE
-100
-80
-60
-40
-20
0
125
-50 -25
0
25
50
75 100
-50 -25
0
25
50
75 100 125
INPUT VOLTAGE (V)
TEMPERATURE (°C)
TEMPERATURE (°C)
_______________________________________________________________________________________
3
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Typical Operating Characteristics (continued)
(V = -48V, GND = 0V, and T = +25°C, unless otherwise noted. See Figure 6 for test circuits.)
EE
A
GATE DRIVE VOLTAGE
vs. INPUT VOLTAGE
RESTART DELAY
vs. TEMPERATURE
STARTUP WAVEFORMS
(R = 90Ω, C = 100µF)
L
L
11.0
450
400
350
300
250
200
150
10.5
10.0
9.5
A
0
0
B
0
9.0
C
8.5
8.0
0
D
7.5
7.0
40ms/div
-100
-80
-60
-40
-20
0
-50 -25
0
25
50
75 100 125
A: V , 5V/div
C: V , 50V/div
EE
GS
IN
INPUT VOLTAGE (V)
TEMPERATURE (°C)
B: I , 1A/div
D: V
, 40V/div
DRAIN
STARTUP WAVEFORMS
STARTUP WAVEFORMS
STARTUP WAVEFORMS
(R = 40Ω, C = 100µF)
(R = OPEN, C = 10µF)
(R = 40Ω, C = 10µF)
L
L
L
L
L
L
A
0
A
0
A
0
0
0
B
0
B
B
0
C
0
C
0
C
0
D
0
D
D
5ms/div
5ms/div
5ms/div
A: V 10V/div
GS,
C: V 50V/div
OUT,
A: V 10V/div
GS,
C: V 50V/div
OUT,
A: V 10V/div
GS,
C: V 50V/div
OUT,
B: I 1A/div
IN,
D: PGOOD 50V/div
,
B: I 200mA/div
IN,
D: PGOOD 50V/div
,
B: I 1A/div
IN,
D: PGOOD 50V/div
,
CIRCUIT-BREAKER EVENT
= 1000pF, V = 20mV)
CIRCUIT-BREAKER EVENT
= 1000pF, V = 200mV)
(C
(C
GATE
SLEW RATE vs. V
GATE
OVERDRIVE
OVERDRIVE
EE
12
T
A
= +120°C
A
0
A
0
11
10
9
B
0
B
0
T
A
= +25°C
8
C
0
C
0
T
A
= -40°C
7
6
2µs/div
C: V 10V/div
2µs/div
D: PGOOD 50V/div C: V 10V/div
,
-100
-80
-60
-40
(V)
-20
0
D: PGOOD 50V/div
V
,
GS,
GS,
EE
B: V , 500mV/div
DS
B: V , 500mV/div
DS
4
_______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Pin Description
PIN
NAME
FUNCTION
MAX5900
MAX5901
Negative Supply Voltage Input and External n-Channel MOSFET Source
Connection
1
1
V
EE
Drain Sense Input for External n-Channel MOSFET. Connect DRAIN as close as
possible to the MOSFET’s drain and use wide circuit traces to assure good
thermal coupling between the MAX5900/MAX5901 and the MOSFET (see the
Layout Guidelines section).
2
2
DRAIN
3
4
3
4
GATE
GND
Gate Drive Output for External n-Channel MOSFET
Ground Connection.
Power-Good Output. PGOOD is an n-channel, open-drain, active-low output,
5
—
5
PGOOD
referenced to V
.
EE
Power-Good Output. PGOOD is an n-channel, open-drain, active-high output,
referenced to V
—
PGOOD
.
EE
ON/OFF Control Input. ON/OFF is referenced to V . Drive ON/OFF above 1.38V
EE
or leave unconnected to enable the device. Drive ON/OFF below 1V to disable
the device. ON/OFF is also used to adjust the UVLO threshold. See the Under-
voltage Lockout section in the Applications Information. Internally clamped to
nominally 3V through a 1kΩ resistor (see Figure 1).
6
6
ON/OFF
—
—
EP
Exposed Pad (TDFN only). Connect to V
.
EE
Detailed Description
The MAX5900/MAX5901 are integrated hot-swap con-
troller ICs contained in 6-pin SOT23/TDFN packages.
They allow a board to be safely hot plugged into a live
backplane without causing a glitch on the power-sup-
ply rail. They are well suited for -48V telecom power
systems, allowing a cost-effective, simple, and com-
pact design. The MAX5900/MAX5901 operate from -9V
to -100V to cover the standard telecom voltage range,
and to serve more generalized applications. These
devices require only an external n-channel power MOS-
FET to provide hot-swap control. Figure 1 shows a
functional diagram of the MAX5900/MAX5901.
MAX5900
MAX5901
GND
828kΩ*
ON/OFF
CONTROL
LOGIC
1kΩ*
34.5kΩ*
PGOOD
(PGOOD)
3V
N
The MAX5900/MAX5901 control an external n-channel
power MOSFET placed in the negative power-supply
pathway. When power is first applied, the MAX5900/
MAX5901 keep the MOSFET turned off. The MAX5900/
MAX5901 hold the MOSFET off indefinitely if ON/OFF is
held low, if the supply voltage is below the undervolt-
age lockout level, or if the die temperature exceeds
+125°C. If none of these conditions exist for 300ms
(typ), the MAX5900/MAX5901 begin to gradually turn
on the MOSFET. During this turn-on phase, the
MAX5900/MAX5901 slowly enhance the MOSFET,
V
EE
V
EE
V
EE
466kΩ*
GATE
( ) ARE FOR THE MAX5901 ONLY.
*RELATIVE TOLERANCE 1%, ABSOLUTE TOLERANCE 20% TYPICAL.
DRAIN
Figure 1. Functional Diagram
_______________________________________________________________________________________
5
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
allowing the voltage on the load, i.e. the drain of the
MOSFET, to fall no faster than 10V/ms (typ). The inrush
current to the load is thus limited to a level proportional
to the load capacitance, and the constant load voltage
slew rate. After the MOSFET is fully enhanced, and the
load voltage is settled to its final value, the MAX5900A/
MAX5901A and MAX5900L/MAX5901L monitor the volt-
circuit-breaker function is enabled after the MOSFET is
fully enhanced. Three threshold voltage options are
available—200mV, 300mV, and 400mV. One version is
available with no circuit-breaker function. circuit-break-
er fault management for the MAX5900/MAX5901 is
offered with two different configurations—latched and
automatic retry.
age drop from the MOSFET’s drain-to-source (V ). If
DS
Latched Circuit Breaker
the voltage drop exceeds 75% of the circuit-breaker
threshold the MAX5900A/MAX5901A or MAX5900L/
MAX5901L turn off the MOSFET, disconnecting the
load immediately. Because the circuit-breaker function
is not activated until the MOSFET is fully enhanced, it
takes approximately 10ms for the MAX5900A/
MAX5901A or MAX5900L/MAX5901L to react to an out-
put short circuit at startup. If no circuit-breaker fault
exists, the power-good output is asserted. Then, if any
of four conditions exist, the power-good output
deasserts and the MOSFET is turned off . The four con-
ditions are: the voltage across the MOSFET exceeds
the circuit-breaker threshold; the supply voltage magni-
tude falls below the undervoltage lockout level; the die
temperature exceeds +125°C; or ON/OFF is forced low.
After a circuit-breaker fault, the MAX5900L/MAX5901L
keep the MOSFET off until the power is cycled, or the
part is reset by toggling ON/OFF low for at least 20ms
(typ). After a circuit-breaker fault, the MAX5900A/
MAX5901A automatically restart in 300ms (typ). All ver-
sions automatically restart after a thermal fault, or an
undervoltage shutdown, if the fault condition goes away
for at least 300ms (typ).
After a circuit-breaker trip event, the latched versions
(MAX5900L/MAX5901L) drive GATE to V , turning off
EE
the external MOSFET, and PGOOD (PGOOD) is
deasserted. A latched-off condition needs to be reset
by toggling ON/OFF low for at least 20ms, or by cycling
the power supply, V
.
EE
Automatic Retry Circuit Breaker
After a circuit-breaker trip event, the automatic retry
versions (MAX5900A/MAX5901A) drive GATE to V
,
EE
turning off the external MOSFET, and PGOOD
(PGOOD) is deasserted. If the start conditions are met
for a full 300ms (t ) the start sequence is initiated. The
RS
start conditions are: the device is not in UVLO; ON/OFF
is not driven low; and the device is not in thermal shut-
down.
No Circuit Breaker
For the versions without a circuit-breaker MAX5900N
(MAX5901N), PGOOD (PGOOD) is asserted when the
MOSFET is fully enhanced. Once powered up, the
MAX5900N/MAX5901N ignore the MOSFET drain-to-
source voltage (V ) for applications where a circuit-
DS
breaker function is not desired.
ON/OFF offers external control of the MAX5900/
MAX5901, facilitating power-supply sequencing, and
may also be used to change the UVLO level. UVLO
keeps the external MOSFET switched off as long as the
magnitude of the input voltage is less than a desired
level.
Applications Information
ON/OFF Control Input
The ON/OFF control input provides three hot-swap
functions: external ON/OFF control; setting of the UVLO
level; and resetting after a circuit-breaker event has
caused the MAX5900L/MAX5901L to turn off the exter-
A power-good output, PGOOD (MAX5900) or PGOOD
(MAX5901), asserts when the external MOSFET is fully
enhanced and the drain-source voltage is at least 25%
below the circuit-breaker threshold. PGOOD and
nal MOSFET. Pulling ON/OFF to V for at least 20ms
EE
(t
) forces the MAX5900/MAX5901 to turn off the
OFF
external MOSFET (see Figure 2 for a circuit example).
PGOOD are open-drain outputs referenced to V , and
EE
To reset the MAX5900L/MAX5901L after a circuit-
can withstand up to 100V above V
.
EE
breaker event, toggle ON/OFF to V for at least 20ms
EE
A thermal shutdown feature protects the external MOS-
FET by turning it off if the die temperature of the
MAX5900/MAX5901 exceeds +125°C. The MAX5900/
MAX5901 must be in good thermal contact with the
external MOSFET. See the Layout Guidelines section in
the Applications Information.
(t
).
OFF
ON/OFF can be used to sequence power supplies.
Connecting a capacitor from ON/OFF to V will delay
EE
the rise of ON/OFF proportional to the capacitance and
input impedance of ON/OFF, typically 32kΩ (Figure 3).
A circuit-breaker function monitors the voltage across
the external MOSFET, V , and turns off the MOSFET if
DS
V
exceeds the circuit-breaker threshold, V . The
DS
CB
6
_______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
voltage spikes, as well as preventing accidental
resetting of the circuit-breaker latch (MAX5900L/
MAX5901L).
HOT-SWAP CONTROLLER
GND
MAX5900
OPTIONAL
Thermal Shutdown
MAX5901
GND
R2
47kΩ
ON/OFF
A thermal shutdown feature helps protect the external
MOSFET. If the die temperature of the MAX5900/
MAX5901 exceeds +125°C, the MOSFET is turned off.
For accurate performance, the MAX5900/MAX5901
must be in close thermal contact with the external
MOSFET (see the Layout Guidelines section). Due to
the low power dissipation of the MAX5900/MAX5901, its
junction temperature will typically be within a few
degrees of the MOSFET. All versions of the MAX5900/
MAX5901 automatically restart from a temperature fault
when the junction temperature drops below +110°C.
ON/OFF
V
EE
R1
3kΩ
DGND
-48V
Figure 2. Programmed -20V Lockout With Optional
Optocoupler On/Off Control
HOT-SWAP CONTROLLER #1
Undervoltage Lockout
The MAX5900/MAX5901 turn off the external MOSFET if
the magnitude of the input voltage is below the level set
GND
MAX5900
MAX5901
GND
by ON/OFF for longer than 20ms (t
). If ON/OFF is
OFF
left unconnected, the lockout voltage (V
) defaults
UVLO
ON/OFF
to -31.5V. V
may also be set to any value within
UVLO
C
V
EE
the power-supply range by using external resistors. To
set the lockout voltage to a value between -9V and
-100V, use a resistor-divider connected between GND
and V , with the center node of the divider connected
EE
to ON/OFF. For example, use a 3kΩ resistor (R1 in
HOT-SWAP CONTROLLER #2
Figure 2) from ON/OFF to V and calculate the other
EE
resistor, R2, using:
MAX5900
MAX5901
GND
V
1.26
⎛
⎞
⎠
UVLO
ON/OFF
R2 = R1 ×
− 1
⎟
⎜
⎝
2C
V
EE
where V
is the desired lockout voltage, and
UVLO
V
EE
V
is the ON/OFF reference threshold specified in
ON/OFF
the Electrical Characteristics table (typically 1.26V).
Figure 3. Power-Supply Sequencing
Figure 2 shows an example circuit with V set for
UVLO
-20V. To defeat the UVLO, simply connect a single 100kΩ
resistor between ON/OFF and GND, as shown in Figure 4.
Turn-On and Turn-Off Delays
After power is applied, or ON/OFF is released, there is
HOT-SWAP CONTROLLER
GND
a 300ms delay (t ) before the gate ramp is started.
ON
This delay is also the automatic restart time delay.
MAX5900
In the event of a circuit-breaker condition or an over-
temperature fault condition, the turn-off delay is less
than 2µs. An undervoltage condition must exist for at
100kΩ
MAX5901
GND
ON/OFF
least 20ms (t
) before the MAX5900/MAX5901 turn
OFF
V
EE
off the external MOSFET. ON/OFF must be held low for
at least 20ms (t ) before the MAX5900/MAX5901 turn
OFF
off the external MOSFET. Turn-off delay minimizes spu-
-48V
rious shutdowns due to noisy signals or momentary
Figure 4. Defeating Undervoltage Lockout
_______________________________________________________________________________________
7
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
breaker threshold allows the circuit to operate under
Power-Good Output
The power-good output, PGOOD (PGOOD), is open-
drain and asserts when the external MOSFET is fully
worst-case conditions without causing a circuit-breaker
fault, but the circuit-breaker function will still operate if a
short-circuit or gross overcurrent condition occurs. See
Table 1 for MOSFET suggestions. The MAX5900N/
MAX5901N have no circuit-breaker function. For these
parts choose an external MOSFET that meets the load
requirements.
enhanced and V is less than V
(75% of the circuit-
PG
DS
breaker threshold, V ). For versions without the circuit-
CB
breaker function (MAX5900N/MAX5901N), PGOOD
(PGOOD) asserts when the external MOSFET is fully
enhanced.
PGOOD (PGOOD) deasserts within 2µs when a circuit-
Determining Inrush Current
Determining a circuit’s inrush current is necessary to
help choose the proper MOSFET. The MAX5900/
MAX5901 regulate the inrush current by means of con-
trolling the load voltage slew rate, but inrush current is
also a function of load capacitance. Determine inrush
current using:
breaker event occurs or if the die temperature exceeds
+125°C. PGOOD (PGOOD) deasserts if |V | < |V
|
UVLO
EE
for longer than 20ms or ON/OFF is held low for longer
than 20ms.
The MAX5900 PGOOD is active-low and the MAX5901
PGOOD is active-high. Both are open-drain N-channel
MOSFETs with their sources connected to V , and can
EE
dV
dt
withstand up to 100V.
I = C
= C × SR
Selecting a Circuit-Breaker Threshold
The MAX5900A/MAX5901A and the MAX5900L/
MAX5901L offer a circuit-breaker function to protect the
external MOSFET and the load from the potentially
damaging effects of excessive current. As load current
where C is the load capacitance, and SR is the
MAX5900/MAX5901 Load Voltage Slew-Rate
Magnitude from the Electrical Characteristics table. For
example, assuming a load capacitance of 100µF, and
using the typical value of 10V/ms for the slew rate, the
inrush current is 1A typical.
flows through the external MOSFET, a voltage, V
is
DS,
generated from drain to source due to the MOSFET’s
on-resistance R . The MAX5900A/MAX5901A and
DS(ON)
If the maximum possible Load Voltage Slew Rate is
used, the maximum inrush current calculates to 1.7A.
Choose a MOSFET with a maximum pulsed current
specification that exceeds the maximum inrush current.
MAX5900L/MAX5901L monitor V
MOSFET is fully enhanced. If V
breaker threshold, the external MOSFET is turned off
and PGOOD (PGOOD) is deasserted.
when the external
DS
exceeds the circuit-
DS
To accommodate different MOSFETs and different load
currents, the MAX5900/MAX5901 are available with cir-
cuit-breaker threshold voltages of 200mV, 300mV, and
400mV.
Suggested External MOSFETs
SUGGESTED
EXTERNAL
MOSFET
MAXIMUM
(A)
SUGGESTED
MAXIM PART
The circuit-breaker function is intended to disconnect
the load if a gross overcurrent or short-circuit condition
occurs. For calculating the circuit-breaker threshold,
I
LOAD
0.25
0.5
1
IRFL110
IRFL4310
IRFR3910
IRF540NS
IRF1310NS
IRF1310NS
MAX590_ _CEUT
MAX590_ _BEUT
MAX590_ _CEUT
MAX590_ _BEUT
MAX590_ _BEUT
MAX590_ _CEUT
use the MOSFET’s R
at the worst possible operating
ON
condition, and add a 25% overcurrent margin to the
maximum circuit current. For instance, if a MOSFET has
an R
of 0.06Ω at T = +25°C, and a normalized on-
ON
A
2
resistance factor of 1.75 at T = +130°C (from the
A
3
MOSFET data sheet), the R
used for calculation is
ON
the product of these two numbers, or (0.06Ω) x (1.75) =
0.105Ω. Then, if the maximum current is expected to be
2A, using a 25% margin, the current for calculation is
(2A) x (1.25) = 2.5A. The resulting minimum circuit-
breaker threshold is then the product of these two
results, or (0.105Ω) x (2.5A) = 0.263V. The next highest
minimum available threshold is 0.265V of the
MAX590_ _BEUT, which is an ideal choice given these
parameters. Using this method to choose a circuit-
4
V
= -9V to -90V
IN
8
_______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Layout Guidelines
Good thermal contact between the MAX5900/
MAX5901 and the external MOSFET is essential for the
thermal shutdown feature to operate effectively. Place
GROUND
the MAX5900/MAX5901 as close as possible to the
U1
SOT23-6
drain of the external MOSFET, and use wide circuit
MAX5900/MAX5901
board traces for good heat transfer. See Figure 5 for an
example of a PC board layout.
POWER IN
S
D G
M1
SOT-223
POWER
OUT
Chip Information
TRANSISTOR COUNT: 678
PROCESS: BiCMOS
Figure 5. Circuit Board Layout Example
GND
GND
100kΩ
100µF
+
V
MAX5900
MAX5901
50kΩ
+
-
V
V
IN
MAX5900
MAX5901
PGOOD
(PGOOD)
ON/OFF
V
V
-
IN
PGOOD
ON/OFF
(PGOOD)
V
EE
GATE DRAIN
V
EE
GATE DRAIN
(a) SUPPLY CURRENT
(b) V
UVLO
GND
GND
100kΩ
+
-
MAX5900A
MAX5901A
48V
+
PGOOD
(PGOOD)
ON/OFF
MAX5900
MAX5901
V
V
IN
PGOOD
(PGOOD)
ON/OFF
V
-
V
GATE DRAIN
SCOPE
EE
GATE DRAIN
EE
V
SCOPE
50kΩ
(c) GATE DRIVE VOLTAGE
(d) RETRY TIMEOUT
GND
GND
50kΩ
50kΩ
R
L
+
C
L
MAX5900
MAX5901
+
-
48V
-
PGOOD
(PGOOD)
MAX5900
MAX5901
ON/OFF
48V
PGOOD
(PGOOD)
ON/OFF
V
SCOPE
V
EE
GATE DRAIN
SCOPE
GATE DRAIN
SCOPE
EE
SCOPE
SCOPE
SCOPE
SCOPE
SCOPE
50kΩ
(e) TURN-ON WAVEFORMS
(f) CIRCUIT-BREAKER EVENT
Figure 6. Test Circuits
_______________________________________________________________________________________
9
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Selector Guide
SOT23
CIRCUIT-BREAKER
CIRCUIT-BREAKER
FUNCTION
POWER-GOOD
OUTPUT LOGIC
PART
THRESHOLD
(mV)
TOP MARK
MAX5900NNEUT+T
MAX5900AAEUT+T
MAX5900ABEUT+T
MAX5900ACEUT+T
MAX5900LAEUT+T
MAX5900LBEUT+T
MAX5900LCEUT+T
MAX5901NNEUT+T
MAX5901AAEUT+T
MAX5901ABEUT+T
MAX5901ACEUT+T
MAX5901LAEUT+T
MAX5901LBEUT+T
MAX5901LCEUT+T
None
None
200
300
400
200
300
400
None
200
300
400
200
300
400
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-High
Active-High
Active-High
Active-High
Active-High
Active-High
Active-High
AAQV
AAQJ
AAQK
AAQL
AAQM
AAQN
AAQO
AAQW
AAQP
AAQQ
AAQR
AAQS
AAQT
AAQU
Autoretry
Autoretry
Autoretry
Latched
Latched
Latched
None
Autoretry
Autoretry
Autoretry
Latched
Latched
Latched
TDFN
CIRCUIT-BREAKER
THRESHOLD
(mV)
CIRCUIT-BREAKER
FUNCTION
POWER-GOOD
OUTPUT LOGIC
PART
TOP MARK
MAX5900NNETT+T
MAX5900AAETT+T
MAX5900ABETT+T
MAX5900ACETT+T
MAX5900LAETT+T
MAX5900LBETT+T
MAX5900LCETT+T
MAX5901NNETT+T
MAX5901AAETT+T
MAX5901ABETT+T
MAX5901ACETT+T
MAX5901LAETT+T
MAX5901LBETT+T
MAX5901LCETT+T
+Denotes lead-free package.
None
None
200
300
400
200
300
400
None
200
300
400
200
300
400
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-Low
Active-High
Active-High
Active-High
Active-High
Active-High
Active-High
Active-High
AJT
AJU
AJV
AJW
AJX
AJY
AJZ
AKA
AKB
AKC
AKD
AKE
AKF
AKG
Autoretry
Autoretry
Autoretry
Latched
Latched
Latched
None
Autoretry
Autoretry
Autoretry
Latched
Latched
Latched
10 ______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Typical Operating Circuits (continued)
50W ISOLATED
POWER SUPPLY
BACKPLANE CIRCUIT CARD
GND
HOT-SWAP CONTROLLER
V+
MAX5901
1MΩ
39kΩ
MAX5003*
GND
ON/OFF
PGOOD
DRAIN
GATE
INDIV
V
EE
GND
-48V
IR540NS
FUSE
*MAX5003 IS A 110V PWM CONTROLLER.
Pin Configurations (continued)
TOP VIEW
V
ON/OFF
1
6
EE
DRAIN
GATE
PGOOD (PGOOD)
GND
2
3
5
4
MAX5900
MAX5901
* EXPOSED PAD
TDFN
3mm x 3mm
( ) ARE FOR MAX5901 ONLY.
* EXPOSED PAD CONNECTED TO V
.
EE
______________________________________________________________________________________ 11
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
12 ______________________________________________________________________________________
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
1
H
21-0137
2
______________________________________________________________________________________ 13
-100V, SOT23/TDFN, Simple Swapper
Hot-Swap Controllers
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
PACKAGE VARIATIONS
COMMON DIMENSIONS
MIN. MAX.
SYMBOL
PKG. CODE
T633-1
N
6
D2
1.50±0.10 2.30±0.10 0.95 BSC
1.50±0.10 2.30±0.10
E2
e
JEDEC SPEC
MO229 / WEEA
MO229 / WEEA
MO229 / WEEC
MO229 / WEEC
MO229 / WEEC
b
[(N/2)-1] x e
1.90 REF
1.90 REF
1.95 REF
1.95 REF
1.95 REF
2.00 REF
2.00 REF
2.40 REF
2.40 REF
0.40±0.05
0.40±0.05
0.30±0.05
0.30±0.05
0.30±0.05
A
0.70
2.90
2.90
0.00
0.20
0.80
3.10
3.10
0.05
0.40
T633-2
6
D
E
0.95 BSC
T833-1
8
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
T833-2
8
A1
L
T833-3
8
T1033-1
T1033-2
T1433-1
T1433-2
10
10
14
14
1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05
k
0.25 MIN.
0.20 REF.
1.50±0.10 2.30±0.10
0.25±0.05
0.20±0.05
0.20±0.05
A2
0.50 BSC MO229 / WEED-3
1.70±0.10 2.30±0.10 0.40 BSC
1.70±0.10 2.30±0.10 0.40 BSC
- - - -
- - - -
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
2
-DRAWING NOT TO SCALE-
H
21-0137
2
Revision History
Pages changed at Rev 5: 1–4, 10, 12–14
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
14 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2007 Maxim Integrated Products
is a registered trademark of Maxim Integrated Products, Inc.
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