MAX1716 [MAXIM]
High-Speed, Adjustable, Synchronous Step-Down Controllers with Integrated Voltage Positioning; 高速,可调,同步降压型控制器,集成电压定位型号: | MAX1716 |
厂家: | MAXIM INTEGRATED PRODUCTS |
描述: | High-Speed, Adjustable, Synchronous Step-Down Controllers with Integrated Voltage Positioning |
文件: | 总33页 (文件大小:838K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
19-1758; Rev 0; 8/00
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
General Description
Features
The MAX1716/MAX1854/MAX1855 step-down con-
trollers are intended for core CPU DC-DC converters in
notebook computers. They feature a dynamically
adjustable output (5-bit DAC), ultra-fast transient
response, high DC accuracy, and high efficiency need-
ed for leading-edge CPU core power supplies. Maxim's
proprietary Quick-PWM™ quick-response, constant-on-
time PWM control scheme handles wide input/output
voltage ratios with ease and provides 100ns “instant-on”
response to load transients while maintaining a relative-
ly constant switching frequency.
o High-Efficiency Voltage Positioning
o Quick-PWM Architecture
o ±±1 V
Line-Regulation Accuracy
OUT
o Adjustable Output Range (5-Bit DAC)
MAX±7±6: 0.925V to ±.6V
MAX±854: 0.925V to 2.0V
MAX±855: 0.600V to ±.75V
o 2V to 28V Input Range
o 200/300/400/550kHz Switching Frequency
o Output Undervoltage Protection
The MAX1716/MAX1854/MAX1855 are designed
specifically for CPU core applications requiring a volt-
age-positioned supply. The voltage-positioning input
(VPS), combined with a high DC accuracy control loop,
is used to implement a power supply that modifies its
output set point in response to the load current. This
arrangement decreases full-load power dissipation and
reduces the required number of output capacitors.
o Overvoltage Protection (MAX±7±6/MAX±855)
o Drive Large Synchronous-Rectifier MOSFETs
o ±.7ms Digital Soft-Start
o 700µA I
Supply Current
CC
The 28V input range of the MAX1716/MAX1854/MAX1855
enables single-stage buck conversion from high-volt-
age batteries for the maximum possible efficiency.
Alternatively, the devices’ high-frequency capability
combined with two-stage conversion (stepping down
the +5V system supply instead of the battery) allows
the smallest possible physical size. The output voltage
can be dynamically adjusted through the 5-bit digital-
to-analog converter (DAC) inputs.
o ±µA Shutdown Supply Current
o 2V ±±1 Reference Output
o V
Transition-Complete Indicator
GATE
o Small 24-Pin QSOP Package
Typical Operating Circuit
The MAX1716/MAX1854/MAX1855 are available in a
24-pin QSOP package. For applications requiring
SpeedStep™ power control (see the MAX1717).
BATTERY
2V TO 28V
+5V INPUT
________________________Applications
V
V
DD
V+
CC
SHDN
ILIM
REF
Notebook Computers
BST
DH
Docking Stations
OUTPUT
CPU Core Supply
MAX1716
MAX1854
MAX1855
CC
LX
DL
Single-Stage (BATT to V
) Converters
CORE
SKIP
Two-Stage (+5V to V
) Converters
CORE
GND
TON
CS
VPS
Ordering Information
D0
D1
D2
D3
D4
PART
TEMP. RANGE
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
PIN-PACKAGE
24 QSOP
PGND
DAC
INPUTS
MAX±7±6EEG
MAX±854EEG
MAX±855EEG
24 QSOP
FB
VGATE
24 QSOP
Quick-PWM is a trademark of Maxim Integrated Products.
SpeedStep is a trademark of Intel Corp.
Pin Configuration appears at end of data sheet.
________________________________________________________________ Maxim Integrated Products
±
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800.
For small orders, phone 1-800-835-8769.
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
ABSOLUTE MAXIMUM RATINGS
V+ to GND..............................................................-0.3V to +30V
LX to BST..................................................................-6V to +0.3V
CS to GND.................................................................-2V to +30V
REF Short Circuit to GND...........................................Continuous
V
, V
to GND .....................................................-0.3V to +6V
CC DD
PGND to GND..................................................................... 0.3V
SHDN, VGATE to GND.............................................-0.3V to +6V
ILIM, FB, CC, REF, D0–D4, VPS,
Continuous Power Dissipation (T = +70°C)
A
24-Pin QSOP (derate 9.5mW/°C above +70°C)...........762mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
TON to GND ...........................................-0.3V to (V
SKIP to GND (Note 1).................................-0.3V to (V
DL to PGND................................................-0.3V to (V
BST to GND............................................................-0.3V to +36V
DH to LX....................................................-0.3V to (V + 0.3V)
+ 0.3V)
+ 0.3V)
+ 0.3V)
CC
CC
DD
BST
Note ±: SKIP may be forced below -0.3V, temporarily exceeding the absolute maximum rating, for the purpose of debugging proto-
type breadboards, using the no-fault test mode. Limit the current drawn to -2mA (max).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, V+ = +15V, V
= V
= 5V, SKIP = V , VPS = PGND, T = 0°C to +85°C, unless otherwise noted. Typical
CC
DD
CC
A
values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PWM CONTROLLER
Battery voltage, V+
, V
2
28
Input Voltage Range
V
V
4.5
5.5
CC DD
DAC codes from
1.35V to 2.0V
-1
1
DC Output Voltage Accuracy
(Notes 2, 3)
V+ = 4.5V to 28V,
VPS = PGND
DAC codes from
0.925V to 1.3V
-1.2
-1.5
1.2
1.5
%
DAC codes from
0.6V to 0.9V
FB Input Bias Current
VPS Input Bias Current
VPS Gain
I
FB = 0.6V to 2.0V
-0.2
-1
0.2
1
µA
µA
FB
I
V
V
=
40mV
VPS
VPS
VPS
A
VPS
I
CS
= 0 or -40mV, gain from VPS to FB
0.153
-1
0.175
0.197
1
%/mV
µA
CS Input Bias Current
ILIM Input Leakage Current
Soft-Start Ramp Time
0 to 28V
= 0 or 5.0V
I
V
0.01
1.7
100
nA
ILIM
ILIM
0 to full ILIM
ms
TON = GND
TON = REF
TON = open
205
280
425
615
255
327
470
678
400
300
375
520
740
500
V+ = 11.0V,
On-Time (Note 4)
t
ns
ns
ON
V
= 1.5V
FB
TON = V
CC
Minimum Off-Time (Note 4)
t
OFF(MIN)
2
_______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = +15V, V
= V = 5V, SKIP = V , VPS = PGND, T = 0°C to +85°C, unless otherwise noted. Typical
DD CC A
CC
values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
BIAS AND REFERENCE
Measured at V , FB forced above the
CC
regulation point
Quiescent Supply Current (V
)
)
I
I
700
<1
950
5
µA
µA
CC
CC
Measured at V , FB forced above the
DD
regulation point
Quiescent Supply Current (V
DD
DD
I+
Quiescent Supply Current (V+)
25
<1
<1
<1
2
40
5
µA
µA
µA
µA
V
Shutdown Supply Current (V
Shutdown Supply Current (V
)
SHDN = GND
SHDN = GND
CC
DD
)
5
Shutdown Supply Current (V+)
Reference Voltage
SHDN = GND, V
= V
= 0 or 5V
DD
5
CC
V
V
= 4.5V to 5.5V, no external REF load
1.98
10
2.02
0.01
REF
CC
Reference Load Regulation
REF Sink Current
I
= 0 to 50µA
V
REF
I
REF in regulation
Falling edge
µA
V
REF
REF Fault Lockout Voltage
FAULT PROTECTION
1.6
MAX1716
MAX1855
1.8
1.9
2.0
2.0
Output Overvoltage Fault
Threshold (Note 5)
Measured at FB
V
1.97
2.03
Output Overvoltage Fault
Propagation Delay (Note 5)
FB forced to 2% above trip threshold
(MAX1716/MAX1855 only)
1.5
40
10
µs
Output Undervoltage Fault
Threshold (Foldback)
35
45
%
Output Undervoltage Fault
Propagation Delay
FB forced to 2% below trip threshold
µs
Output Undervoltage Fault
Blanking Time (Foldback)
From SHDN signal going high
10
30
ms
mV
mV
mV
Current-Limit Threshold
(Positive, Default)
V
V
V
V
V
V
- V , ILIM = V
CC
110
120
130
ITH
ITH
PGND
PGND
PGND
PGND
CS
V
V
= 0.5V
40
50
60
ILIM
ILIM
Current-Limit Threshold
(Positive, Adjustable)
- V
CS
- V
CS
- V
CS
= 2V (REF)
170
200
230
Negative Current-Limit
Threshold
-1.2 ×
V
ITH
Zero-Crossing Current-Limit
Threshold
3
mV
°C
V
Thermal Shutdown Threshold
Hysteresis = 10°C
150
V
Undervoltage Lockout
Rising edge, hysteresis = 20mV, switching
disabled below this level
CC
4.0
4.45
Threshold
_______________________________________________________________________________________
3
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = +15V, V
= V = 5V, SKIP = V , VPS = PGND, T = 0°C to +85°C, unless otherwise noted. Typical
DD CC A
CC
values are at T = +25°C.)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Measured at FB with respect to unloaded
output voltage, falling edge
VGATE Lower Trip Threshold
-12.5
-10
-7.5
%
Measured at FB with respect to unloaded
output voltage, rising edge
VGATE Upper Trip Threshold
VGATE Propagation Delay
7.5
10
12.5
%
Falling edge, FB forced 2% below or above
VGATE trip threshold
1.5
µs
VGATE Output Low Voltage
VGATE Leakage Current
GATE DRIVERS
I
= 1mA
0.4
1
V
SINK
High state, forced to 5.5V
µA
DH Gate Driver On-Resistance
R
R
V
- V forced to 5V
1.3
1.5
0.5
5
5
Ω
Ω
ON(DH)
BST
LX
High state (pullup)
DL Gate Driver On-Resistance
ON(DL)
Low state (pulldown)
1.7
DH Gate Driver Source/Sink
Current
I
DH forced to 2.5V, V
- V forced to 5V
LX
1
A
DH
BST
DL Gate Drive Sink Current
I
I
DL forced to 5V
DL forced to 2.5V
DL rising
3
1
A
A
DL
DL
DL Gate Driver Source Current
35
26
Dead-Time
ns
DH rising
LOGIC AND I/O
Logic Input High Voltage
Logic Input Low Voltage
V
D0−D4, SHDN, SKIP
D0−D4, SHDN, SKIP
2.4
V
V
IH
V
0.8
IL
TON = V
(200kHz operation)
V
- 0.4
CC
CC
TON = open (300kHz operation)
TON = REF (400kHz operation)
TON = GND (550kHz operation)
3.15
3.85
2.35
0.5
3
TON Input Levels
V
1.65
TON = GND or V
-3
-1
CC
Logic Input Current
µA
SHDN, SKIP = GND or V
D0−D4 = GND
1
CC
D0−D4 Pullup Current
3
5
10
µA
SKIP No-Fault Mode Current
T
= +25°C
-1.5
-0.1
mA
A
4
_______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
ELECTRICAL CHARACTERISTICS
(Circuit of Figure 1, V+ = +15V, V
= V
= 5V, SKIP = V , VPS = PGND, T = -40°C to +85°C, unless otherwise noted.) (Note 6)
CC
DD
CC
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PWM CONTROLLER
Battery voltage, V+
, V
2
28
Input Voltage Range
V
V
4.5
5.5
CC DD
DAC codes from
1.35V to 2.0V
-1.6
-2
1.6
2
DC Output Voltage Accuracy
(Notes 2, 3)
V+ = 4.5V to 28V,
VPS = PGND
%
DAC codes from
0.6V to 1.3V
FB Input Bias Current
VPS Input Bias Current
VPS Gain
I
FB = 0.6V to 2.0V
-0.2
-1
0.2
1
µA
µA
FB
I
V
V
=
40mV
VPS
VPS
VPS
A
VPS
I
CS
= 0 or -40mV, gain from VPS to FB
0.153
-1
0.197
1
%/mV
µA
CS Input Bias Current
ILIM Input Leakage Current
0 to 28V
= 0 or 5.0V
I
V
100
300
375
520
740
500
nA
ILIM
ILIM
TON = GND
TON = REF
TON = open
205
280
425
615
V+ = 11.0V,
= 1.5V
On-Time (Note 4)
t
ns
ns
ON
V
FB
TON = V
CC
Minimum Off-Time (Note 4)
t
OFF(MIN)
BIAS AND REFERENCE
Measured at V , FB forced above the
CC
regulation point
Quiescent Supply Current (V
)
I
I
950
5
µA
µA
CC
CC
Measured at V , FB forced above the
DD
regulation point
Quiescent Supply Current (V
)
DD
DD
I+
Quiescent Supply Current (V+)
40
5
µA
µA
µA
µA
V
Shutdown Supply Current (V
Shutdown Supply Current (V
)
SHDN = GND
SHDN = GND
CC
DD
)
5
Shutdown Supply Current (V+)
Reference Voltage
SH DN = GND, V+ = 28V, V = V = 0 or 5V
5
CC
DD
V
V
= 4.5V to 5.5V, no external REF load
1.98
10
2.02
0.01
REF
CC
Reference Load Regulation
REF Sink Current
I
= 0 to 50µA
V
REF
I
REF in regulation
µA
REF
FAULT PROTECTION
MAX1716
MAX1855
1.8
2.0
V
Output Overvoltage Fault
Threshold (Note 5)
Measured at FB
1.97
2.03
Output Undervoltage Fault
Threshold (Foldback)
35
10
45
30
%
Output Undervoltage Fault
Blanking Time (Foldback)
From SHDN signal going high
ms
_______________________________________________________________________________________
5
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, V+ = +15V, V
= V
= 5V, SKIP = V , VPS = PGND, T = -40°C to +85°C, unless otherwise noted.) (Note 6)
CC
DD
CC
A
PARAMETER
SYMBOL
CONDITIONS
- V , ILIM = V
MIN
TYP
MAX
UNITS
Current-Limit Threshold
(Positive, Default)
V
V
V
V
100
140
mV
ITH
ITH
PGND
PGND
CS
CC
V
V
= 0.5V
35
65
ILIM
ILIM
Current-Limit Threshold
(Positive, Adjustable)
- V
CS
mV
V
= 2V (REF)
160
240
V
Undervoltage Lockout
Threshold
Rising edge, hysteresis = 20mV, switching
disabled below this level
CC
4.0
-12.5
7.5
4.45
-7.5
12.5
Measured at FB with respect to unloaded
output voltage, falling edge
VGATE Lower Trip Threshold
%
%
Measured at FB with respect to unloaded
output voltage, rising edge
VGATE Upper Trip Threshold
VGATE Output Low Voltage
VGATE Leakage Current
GATE DRIVERS
I
= 1mA
0.4
1
V
SINK
High state, forced to 5.5V
µA
DH Gate Driver On-Resistance
R
R
V
- V forced to 5V
5
5
Ω
Ω
ON(DH)
BST
LX
High state (pullup)
DL Gate Driver On-Resistance
ON(DL)
Low state (pulldown)
1.7
LOGIC AND I/O
Logic Input High Voltage
Logic Input Low Voltage
V
D0−D4, SHDN, SKIP
D0−D4, SHDN, SKIP
2.4
V
V
IH
V
0.8
IL
TON = V
(200kHz operation)
V
- 0.4
CC
CC
TON = open (300kHz operation)
TON = REF (400kHz operation)
TON = GND (550kHz operation)
3.15
3.85
2.35
0.5
3
TON Input Levels
V
1.65
TON = GND or V
-3
-1
3
CC
Logic Input Current
µA
µA
SHDN, SKIP = GND or V
1
CC
D0−D4 Pullup Current
D0−D4 = GND
10
Note 2: Output voltage accuracy specifications apply to DAC voltages from 0.6V to 2.0V. Includes load-regulation error.
Note 3: When the inductor is in continuous conduction, the output voltage will have a DC regulation level higher than the error-com-
parator threshold by 50% of the ripple. In discontinuous conduction (SKIP = GND, light load), the output voltage will have a
DC regulation level higher than the trip level by approximately 1.5% due to slope compensation.
Note 4: On-time and off-time specifications are measured from 50% to 50% at the DH pin, with LX forced to 0, BST forced to 5V, and
a 500pF capacitor from DH to LX to simulate external MOSFET gate capacitance. Actual in-circuit times may be different
due to MOSFET switching speeds.
Note 5: The MAX1854 does not have overvoltage protection.
Note 6: Specifications to -40°C are guaranteed by design, not production tested.
6
_______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Typical Operating Characteristics
(Circuit from Figure 1, components from Table 2, T = +25°C, unless otherwise noted.)
A
EFFICIENCY vs. LOAD CURRENT
EFFICIENCY vs. LOAD CURRENT
(1.6V AT 300kHz)
(2.0V AT 300kHz)
100
100
SKIP MODE (SKIP = GND)
B1
B1
C1
95
90
85
80
75
70
65
60
95
90
85
80
75
70
65
60
C1
A1
A1
A1:
B1:
C1:
D1:
V
V
= 4.5V
= 7V
= 15V
= 24V
BATT
BATT
V
BATT
BATT
V
D1
A2
B2
D1
A2
PWM MODE (SKIP = V
)
CC
A2:
B2:
C2:
D2:
V
V
V
V
= 4.5V
= 7V
= 15V
= 24V
BATT
BATT
BATT
BATT
C2
D2
C2
B2
D2
55
50
55
50
MAX1854 ONLY
10 100
0.01
10.1
1
0.01
10.1
1
10
100
LOAD CURRENT (A)
LOAD CURRENT (A)
EFFICIENCY vs.
LOAD CURRENT (1.3V AT 200kHz)
EFFICIENCY vs.
LOAD CURRENT (1.3V AT 300kHz)
EFFICIENCY vs.
LOAD CURRENT (1.3V AT 550kHz)
100
100
100
C1
B1
95
90
85
80
75
70
65
60
95
90
85
80
75
70
65
60
95
90
85
80
75
70
65
60
C1
B1
C1
B1
A1
A1
A1
D1
D1
A2
B2
A2
B2
A2
B2
C2
C2
D2
D2
C2
D2
D1
CIRCUIT #2
CIRCUIT #2
CIRCUIT #2
55
50
55
50
55
50
L = 1.5µH
L = 1.0µH
L = 0.68µH
0.01
0.1
1
10
100
0.01
0.1
1
10
100
0.01
0.1
1
10
100
LOAD CURRENT (A)
LOAD CURRENT (A)
LOAD CURRENT (A)
EFFECTIVE EFFICIENCY vs.
LOAD CURRENT (1.3V AT 200kHz)
EFFECTIVE EFFICIENCY vs.
LOAD CURRENT (1.3V AT 300kHz)
EFFECTIVE EFFICIENCY vs.
LOAD CURRENT (1.3V AT 550kHz)
100
100
100
C1
B1
C1
B1
95
90
85
80
75
70
65
60
95
90
85
80
75
70
65
60
95
90
85
80
75
70
65
60
B1
C1
A1
A1
A1
D1
D1
A2
B2
A2
B2
A2
B2
C2
D2
C2
D2
C2
D1
D2
CIRCUIT #2
L = 1.0µH
CIRCUIT #2
L = 1.5µH
CIRCUIT #2
L = 0.68µH
55
50
55
50
55
50
0.01
0.1
1
10
100
0.01
0.1
1
10
100
0.01
0.1
1
10
100
LOAD CURRENT (A)
LOAD CURRENT (A)
LOAD CURRENT (A)
_______________________________________________________________________________________
7
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Typical Operating Characteristics (continued)
(Circuit from Figure 1, components from Table 2, T = +25°C, unless otherwise noted.)
A
OUTPUT VOLTAGE vs. LOAD CURRENT
(1.6V AT 300kHz)
OUTPUT VOLTAGE vs.
LOAD CURRENT (1.3V AT 300kHz)
EFFICIENCY vs.
LOAD CURRENT (1.0V AT 400kHz)
1.64
1.62
1.60
1.58
1.56
1.54
1.52
1.50
1.34
1.32
1.30
1.28
1.26
1.24
1.22
1.20
100
PWM MODE
SKIP MODE
PWM MODE
SKIP MODE
95
90
85
80
75
70
65
60
C1
B1
A1
V
BATT
= 24V
V
= 24V
BATT
V
BATT
= 7V
V
= 7V
BATT
B2
A2
C2
D2
D1
CIRCUIT #2
L = 1.0µH
55
50
CIRCUIT #3
10 100
0
5
10
15
20
25
0
2
4
6
8
10
12
14
0.01
0.1
1
LOAD CURRENT (A)
LOAD CURRENT (A)
LOAD CURRENT (A)
OUTPUT VOLTAGE vs.
LOAD CURRENT (1.0V AT 400kHz)
SWITCHING FREQUENCY
vs. LOAD CURRENT
SWITCHING FREQUENCY
vs. BATTERY VOLTAGE
1.02
1.00
350
300
250
200
150
100
50
320
310
300
290
280
270
260
PWM MODE
SKIP MODE
V
= 1.6V
OUT(PROG)
V
= 24V
BATT
PWM MODE
SKIP MODE
0.98
0.96
0.94
V
= 7V
BATT
V
= 0.925V
OUT(PROG)
V
= 7V
BATT
= 1.6V
V
OUT(PROG)
I
= 12A
4
CIRCUIT #3
2
OUT
0.92
0
0
4
6
8
10
12
14
0
4
8
12
16
20
0
8
12
16
20
24
LOAD CURRENT (A)
LOAD CURRENT (A)
V
BATT
(V)
SWITCHING FREQUENCY
vs. TEMPERATURE
NORMALIZED CURRENT-LIMIT ERROR
vs. TEMPERATURE
ON-TIME vs. TEMPERATURE
0.88
0.86
0.84
0.82
0.80
0.78
0.76
0.74
330
320
310
300
290
280
270
6
I
= 12A
OUT
4
2
I
= 1A
OUT
I
= 5A
OUT
0
I
= 5A
OUT
-2
-4
-6
I
= 1A
OUT
I
= 12A
OUT
-40
-15
10
35
60
85
-40
-15
10
35
60
85
-40
-15
10
35
60
85
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
8
_______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Typical Operating Characteristics (continued)
(Circuit from Figure 1, components from Table 2, T = +25°C, unless otherwise noted.)
A
INDUCTOR CURRENT PEAKS AND
VALLEYS vs. BATTERY VOLTAGE
CONTINUOUS-TO-DISCONTINUOUS
CURRENT-LIMIT ERROR vs. V
ILIM
INDUCTOR CURRENT POINT
3
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
20
15
10
5
CIRCUIT#1
I
PEAK
V
OUT
= 1.6V
1
0
CIRCUIT#2
V
OUT
= 1.3V
I
VALLEY
CIRCUIT#3
= 1.0V
-1
-2
-3
V
OUT
V
OUT
= 1.3V
CIRCUIT#2 (L = 1µH)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
24
0
4
8
12
16 20 24
V
BATT
(V)
V
BATT
(V)
V
ILIM
(V)
NO-LOAD SUPPLY CURRENT
vs. BATTERY VOLTAGE
NO-LOAD SUPPLY CURRENT
vs. BATTERY VOLTAGE
NO-LOAD SUPPLY CURRENT
vs. BATTERY VOLTAGE
0.8
30
25
20
15
10
5
14
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
12
10
8
I + I
CC DD
I + I
CC DD
I + I
CC DD
SKIP MODE
550kHz (TON = GND)
CURCUIT#2 (L = 0.68µH)
I
BATT
6
I
BATT
4
PWM MODE
550kHz (TON = GND)
CURCUIT#2 (L = 0.68µH)
PWM MODE
200kHz (TON = V
CURCUIT#2 (L = 1.5µH)
2
)
CC
I
BATT
0
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
0
4
8
12
16
20
24
V
BATT
(V)
V
BATT
(V)
V
BATT
(V)
LOAD-TRANSIENT RESPONSE
LOAD-TRANSIENT RESPONSE
WITH DISABLED VOLTAGE POSITIONING
(V
BATT
= 15V, PWM MODE)
1.60V
1.60V
A
B
1.55V
1.50V
A
B
1.55V
1.50V
20A
10A
0
20A
10A
0
40µs/div
40µs/div
A. V
= 1.6V, 50mV/div; B. I
= 0.3A TO 18A, 10A/div;
OUT
OUT
A. V
= 1.6V, 50mV/div; B. I
= 1.3A TO 18A, 10A/div;
OUT
OUT
CIRCUIT #1, V
= 15V, PWM MODE; VPS = PGND
BATT
CIRCUIT #1, V
= 15V, PWM MODE
BATT
_______________________________________________________________________________________
9
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Typical Operating Characteristics (continued)
(Circuit from Figure 1, components from Table 2, T = +25°C, unless otherwise noted.)
A
LOAD-TRANSIENT RESPONSE
LOAD-TRANSIENT RESPONSE
(V = 4.5V)
(V
= 15V, SKIP MODE)
BATT
BATT
1.60V
1.55V
1.50V
1.60V
1.55V
1.50V
A
B
A
B
20A
10A
0
20A
10A
0
40µs/div
40µs/div
A. V
OUT
= 1.6V, 50mV/div; B. I
= 0.3A TO 18A, 10A/div
A. V
OUT
= 1.6V, 50mV/div
OUT
CIRCUIT #1, V
= 15V, SKIP MODE
B. I
OUT
= 0.3A TO 18A, 10A/div
BATT
CIRCUIT #1, V
= 4.5V, PWM MODE
BATT
LOAD-TRANSIENT RESPONSE
(V = 1.0V)
LOAD-TRANSIENT RESPONSE
WITH CERAMIC OUTPUT CAPACITORS
OUT(PROG)
1.00V
0.98V
0.96V
0.94V
20A
1.65V
1.60V
1.55V
1.50V
A
A
B
20A
10A
0
B
10A
0
40µs/div
40µs/div
A. V
OUT
= 1.0V, 20mV/div
A. V
= 1.6V, 50mV/div
OUT
B. I
OUT
= 0.3A TO 12A, 10A/div
B. I
OUT
= 0.3A TO 18A, 10A/div
CIRCUIT #3, V
= 4.5V, PWM MODE
CIRCUIT #4, V
= 15V, PWM MODE
BATT
BATT
10 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Typical Operating Characteristics (continued)
(Circuit from Figure 1, components from Table 2, T = +25°C, unless otherwise noted.)
A
STARTUP WAVEFORM
(18A LOAD)
SHORT-CIRCUIT WAVEFORM
MAX1716-30
MAX1716-31
2V
1V
2V
1V
A
A
0
0
20A
10A
20A
10A
B
B
0
5V
0
0
5V
0
C
C
200µs/div
= 1.6V, 1V/div
20µs/div
= 1.6V, 1V/div
A. V
OUT
A. V
OUT
B. I , L = 0.68µH, 10A/div
L
B. I , L = 0.68µH, 10A/div
L
C. V
= 0 TO V , 5V/div
CC
SHDN
C. SHORT-CIRCUIT CONTROL, 5V/div
R
OUT
= 88mΩ
STARTUP WAVEFORM
(NO-LOAD)
SHUTDOWN WAVEFORM
MAX1716-33
MAX1716-32
2V
1V
0
2V
0
A
B
A
20A
0
10A
0
B
C
D
-20A
5V
0
5V
0
C
D
5V
0
5V
0
100µs/div
= 1.6V, NO LOAD, 1V/div
100µs/div
= 1.6V, R = 88mΩ, 2V/div
A. V
OUT
A. V
OUT
OUT
B. I , L = 0.68µH, 10A/div
L
B. I , L = 0.68µH, 20A/div
L
C. V , 5V/div
DL
C. V , 5V/div
DL
D. V
= 0 TO V , 5V/div
CC
D. V
= V TO 0, 5V/div
CC
SHDN
SHDN
______________________________________________________________________________________ 11
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Pin Description
PIN
NAME
FUNCTION
1
DH
High-Side Gate Driver Output. DH swings from LX to BST.
Battery Voltage Sense Connection. Connect V+ to input power source. V+ is used only for PWM
one-shot timing. DH on-time is inversely proportional to input voltage over a 2V to 28V range.
2
3
V+
Shutdown Control Input. Drive SHDN to GND to force the MAX1716/MAX1854/MAX1855 into
SHDN
shutdown. Drive or connect to V
latch.
for normal operation. A rising edge on SHDN clears the fault
CC
Feedback Input. Normally connected to V
locally at the power supply. An external resistive divider can optionally set the output voltage.
. FB is connected to the bulk output filter capacitors
OUT
4
5
FB
Voltage-Positioning Compensation Capacitor. Connect a 47pF to 1000pF (47pF typ) capacitor from
CC to GND to adjust the loop’s response time.
CC
Current-Limit Adjustment. The GND-CS current-limit threshold defaults to 120mV, if ILIM is tied to
V
. In adjustable mode, the current-limit threshold voltage is 1/10th the voltage seen at ILIM over a
CC
6
ILIM
0.5V to 2.0V range. The logic threshold for switchover to the 120mV default value is approximately
- 1V. Connect ILIM to REF for a fixed 200mV threshold.
V
CC
Analog Supply Input for PWM Core. Connect to the system supply voltage (+4.5V to +5.5V) with a
series 20Ω resistor. Bypass to GND with a 0.22µF (min) ceramic capacitor.
7
8
V
CC
On-Time Selection-Control Input. This is a four-level input used to determine DH on-time. Connect to
GND, REF, or V , or leave TON unconnected to set the following switching frequencies: GND =
CC
TON
550kHz, REF = 400kHz, floating = 300kHz, and V
= 200kHz.
CC
+2.0V Reference Voltage Output. Bypass to GND with 0.22µF (min) capacitor. Can supply 50µA for
external loads.
9
REF
10
GND
Analog Gound
Voltage-Positioning Sense Input. Connect to CS through a 1kΩ resistor to maximize the load-
dependent output voltage drop, or adjust the voltage positioning level by connecting a resistive
divider from CS to PGND. Refer to Setting Voltage Positioning on how to select resistor values.
11
12
VPS
Open-Drain Power-Good Output. VGATE is normally high when the output is in regulation. VGATE is
low in shutdown, undervoltage lockout, and during soft-start. Any fault condition forces VGATE low,
and it remains low until the fault is cleared.
VGATE
13
14
DL
Low-Side Gate-Driver Output. DL swings from PGND to V
.
DD
PGND
Power Ground
Supply Input for the DL Gate Drive. Connect to the system supply voltage, +4.5V to +5.5V. Bypass
to PGND with a 1µF (min) ceramic capacitor.
15
V
DD
16
17
18
19
20
D4
MSB DAC Code Input. 5µA internal pullup to V
(Table 5).
CC
D3
D2
D1
D0
DAC Code Input. 5µA internal pullup to V
DAC Code Input. 5µA internal pullup to V
DAC Code Input. 5µA internal pullup to V
(Table 5).
(Table 5).
(Table 5).
CC
CC
CC
LSB DAC Code Input. 5µA internal pullup to V
(Table 5).
CC
12 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Pin Description (continued)
PIN
NAME
FUNCTION
Pulse-Skipping or Low-Noise Mode Control Input. Connect to V for low-noise forced-PWM mode.
CC
Connect to GND to enable pulse-skipping operation. Low-noise forced-PWM mode causes inductor
current recirculation at light loads and suppresses pulse-skipping operation. Normal operation
prevents current recirculation. SKIP can also be used to disable both overvoltage and undervoltage
protection circuits and clear the fault latch (see No-Fault Test Mode). Do not leave SKIP floating.
21
SKIP
Boost Flying-Capacitor Connection. Connect to an external capacitor and diode according to the
standard application circuit (Figure 1).
22
23
BST
LX
External Inductor Connection. Connect LX to the switched side of the inductor. LX serves as the
lower supply rail for the DH high-side gate driver. LX does not connect to the current-limit
comparator.
Current-Sense Input. Connect a resistor (R
) between CS and PGND. The current-limit
SENSE
threshold is set by ILIM. If the current-sense signal (Inductor Current ✕ R ) exceeds the
SENSE
24
CS
current-limit threshold, the MAX1716/MAX1854/MAX1855 will not initiate a new cycle.
Table 1. Component Selection for Standard Applications
CIRCUIT 1
(FIGURE 1)
CIRCUIT 2
(FIGURE 11)
CIRCUIT 3
(FIGURE 12)
CIRCUIT 4
(FIGURE 13)
COMPONENT
Output Voltage
1.6V
7V to 24V
18A
1.3V
7V to 24V
12A
1.0V
7V to 24V
12A
1.6V
7V to 24V
18A
Input Voltage Range
Maximum Load Current
0.68µH
Sumida
CDEP134H-0R6
or Panasonic
ETQP6F0R6BFA
1µH
Sumida
CEP125-1R0MC
or Panasonic
ETQP6FIRIBFA
0.68µH
Sumida
CDEP134H-0R6
or Panasonic
ETQP6F0R6BFA
0.47µH
Sumitomo
CXE-R47
Inductor
TON Level
Frequency
Float
Float
REF
GND
300kHz
300kHz
400kHz
550kHz
International Rectifier
(2) IRF7811
International Rectifier
IRF7811
International Rectifier
IRF7811
International Rectifier
(2) IRF7811
High-Side MOSFET
Fairchild (2) FDS7764A
Or International
Fairchild (2) FDS7764A
Or International
Fairchild (2) FDS7764A
Or International
Fairchild (2) FDS7764A
Or International
Low-Side MOSFET
Rectifier (2) IRF7811
Rectifier (2) IRF7811
Rectifier (2) IRF7811
Rectifier (2) IRF7811
(5) 10µF
(4) 10µF
(4) 10µF
(5) 10µF
Input Capacitor
Taiyo Yuden
Taiyo Yuden
Taiyo Yuden
Taiyo Yuden
TMK432BJ106
TMK432BJ106
TMK432BJ106
TMK432BJ106
(8) 47µF
Taiyo Yuden
JMK432BJ476MM
or TDK
(5) 220µF
Panasonic
EEFUE0E221R
(4) 220µF
Panasonic
EEFUE0E221R
(4) 220µF
Panasonic
EEFUE0E221R
Output Capacitor
C4532X5ROJ476M
Current-Sense Resistor
ILIM Level
3mΩ
3.5mΩ
3.5mΩ
3mΩ
V
/3
V
/4
V
/4
V
/3
REF
REF
REF
REF
Voltage-Positioning
Resistor Ratio
1:1 (0.5x)
1:2 (0.66x)
1:2 (0.66x)
1:1 (0.5x)
______________________________________________________________________________________ 13
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Table 2. Component Suppliers
MANUFACTURER
MOSFETs
PHONE (COUNTRY CODE)
WEBSITE
Fairchild Semiconductor
International Rectifier
Siliconix
(1) 888-522-5372
(1) 310-322-3331
(1) 203-268-6261
www.fairchildsemi.com
www.irf.com
www.vishay.com
CAPACITORS
Kemet
(1) 408-986-0424
(1) 847-468-5624
www.kemet.com
Panasonic
www.panasonic.com
(65) 281-3226 (Singapore)
(1) 408-749-9714
Sanyo
www.secc.co.jp
(03) 3667-3408 (Japan)
(1) 408-573-4150
Taiyo Yuden
www.t-yuden.com
www.tdk.com
TDK
(1) 847-390-4373
INDUCTORS
Coilcraft
Coiltronics
Sumida
(1) 800-322-2645
(1) 561-752-5000
(1) 408-982-9660
www.coilcraft.com
www.coiltronics.com
www.sumida.com
(1) 408-451-8441 (USA)
81 75 961-3141 (Japan)
Sumitomo
www.ssmc.co.jp
The +5V bias supply powers V
DD
(PWM controller) and
CC
_______________Detailed Description
V
(gate-drive power). The maximum current is:
The MAX1716/MAX1854/MAX1855 buck controllers are
targeted for low-voltage, high-current CPU core power
supplies for notebook computers that typically require
18A (or greater) load steps. The proprietary Quick-
PWM pulse-width modulator in the converter is specifi-
cally designed for handling fast load steps while
maintaining a relatively constant operating frequency
and inductor operating point over a wide range of input
voltages. The Quick-PWM architecture circumvents the
poor load-transient timing problems of fixed-frequency
current-mode PWMs while also avoiding the problems
caused by widely varying switching frequencies in con-
ventional constant on-time and constant off-time PFM
schemes.
I
= I
+ ƒ × (Q + Q ) = 10mA to 40mA (typ)
BIAS
CC G1 G2
where I
and Q
is 700µA (typ), ƒ is the switching frequency,
CC
G1
and Q
are the MOSFET data sheet total
G2
gate-charge specification limits at V = 5V.
GS
The battery input (V+) and +5V bias inputs (V
DD
fixed 4.5V to 5.5V supply. If the +5V bias supply is
powered up prior to the battery supply, the enable sig-
nal (SHDN) must be delayed until the battery voltage is
present to ensure startup.
and
CC
V
) can be connected together if the input source is a
Free-Running, Constant-On-Time PWM
Controller with Input Feed-Forward
The Quick-PWM control architecture is a constant-on-
time, current-mode type with voltage feed-forward
(Figure 2). This architecture relies on the output ripple
voltage to provide the PWM ramp signal. Thus, the out-
put filter capacitor’s ESR acts as a feedback resistor.
The control algorithm is simple: the high-side switch on-
time is determined solely by a one-shot whose period is
inversely proportional to input voltage and directly pro-
portional to output voltage (see On-Time One-Shot).
Another one-shot sets a minimum off-time (400ns typ).
The on-time one-shot is triggered if the error compara-
+5V Bias Supply (V
CC
and V )
DD
The MAX1716/MAX1854/MAX1855 require an external
+5V bias supply in addition to the battery. Typically this
+5V bias supply is the notebook’s 95% efficient +5V
system supply. Keeping the bias supply external to the
IC improves efficiency and eliminates the cost associat-
ed with the +5V linear regulator that would otherwise be
needed to supply the PWM circuit and gate drivers. If
stand-alone capability is needed, the +5V supply can
be generated with an external linear regulator.
14 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
+5V INPUT
BIAS SUPPLY
BATTERY (V
7V TO 24V
)
BATT
C4
1µF
R3
10Ω
C5
1µF
C
IN
Q1: (2) IRF7811
INTERNATIONAL RECTIFIER
Q2: (2) IRF7811
INTERNATIONAL RECTIFIER
D1: CMPSH-3
CENTRAL SEMICONDUCTOR
D2: CMSH2-60
CENTRAL SEMICONDUCTOR
(5) 10µF
R4
100kΩ
D1
V
V
DD
CC
POWER-GOOD
INDICATOR
VGATE
V+
BST
DH
SHDN
ILIM
ON OFF
L1
1.6V OUTPUT
UP TO 18A
Q1
0.68µH
C3
0.1µF
R5
C1
0.22µF
200kΩ
R6
100kΩ
C
OUT
REF
CC
MAX1716
MAX1854
MAX1855
(5) 220µF
LX
PANASONIC
D2
C2
47pF
Q2
R
DL
CS
SKIP
D0
R1
1kΩ
SENSE
3mΩ
D1
PGND
D2
R2
1kΩ
D3
TO V
CC
VPS
D4
FB
GND
TON
MAX1716 DAC CODE SHOWN
FLOAT (300kHz)
Figure 1. Standard High-Power Application (Circuit #1)
tor is low, the low-side switch current is below the cur-
rent-limit threshold, and the minimum off-time one-shot
has timed out.
easy design methodology and predictable output volt-
age ripple.
On-Time = K × (V
+ 75mV) / V+
OUT
where K is set by the TON pin-strap connection, and
75mV is an approximation to accommodate for the
expected drop across the low-side MOSFET switch and
current-sense resistor (Table 3).
On-Time One-Shot (TON)
The heart of the PWM core is the one-shot that sets the
high-side switch on-time. This fast, low-jitter, adjustable
one-shot includes circuitry that varies the on-time in
response to the input and output voltages. The high-
side switch on-time is inversely proportional to V+, and
directly proportional to the output voltage as set by the
DAC code. This algorithm results in a nearly constant
switching frequency despite the lack of a fixed-frequen-
cy clock generator. The benefits of a constant switch-
ing frequency are twofold: first, the frequency can be
selected to avoid noise-sensitive regions, such as the
455kHz IF band; second, the inductor ripple-current
operating point remains relatively constant, resulting in
The on-time one-shot has good accuracy at the operat-
ing points specified in the Electrical Characteristics
table. On-times at operating points far removed from
the conditions specified in the Electrical Characteristics
table can vary over a wide range. For example, the
550kHz setting will typically run about 10% slower with
inputs much greater than the +5V due to the very short
on-times required.
While the on-time is set by TON, V+, and the output
voltage, other factors also contribute to the overall
______________________________________________________________________________________ 15
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
IN
2V TO 28V
REF
V+
I
LIM
MAX1716
MAX1854
MAX1855
TOFF
+5V
1-SHOT
TON
FROM
OUT
ON-TIME
TRIG
Q
9R
COMPUTE
BST
DH
R
TON
S
R
Q
Q
TRIG
CURRENT
LIMIT
1-SHOT
LX
Σ
SKIP
ERROR
AMP
CS
OUTPUT
SHDN
ZERO CROSSING
REF
7R
V
DD
+5V
R
DL
PGND
FB
CC
S
R
Q
200k
gm
VPS
V
CHIP
SUPPLY
CC
REF
+10%
REF
-10%
+5V
*
CS
OVP/UVP
DETECT
R-2R
DAC
VGATE
2V REF
REF
D0 D1 D2 D3 D4
NO OVERVOLTAGE PROTECTION ON THE MAX1854
*
Figure 2. Functional Diagram
Table 3. Approximate K-Factor Errors
TON SETTING
(kHz)
K-FACTOR
APPROXIMATE
K-FACTOR ERROR (%)
MIN RECOMMENDED V
AT
BATT
(µs)
V
OUT
= 1.6V (V)
200
300
400
550
5
9
2.04
2.28
2.84
3.55
3.3
2.2
1.8
11
15
20
16 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
-I
PEAK
∆i
∆t
V
- V
BATT OUT
=
L
-I
PEAK
I
LOAD
I
= I
/2
LOAD PEAK
I
LIMIT
0
ON-TIME
TIME
0
TIME
Figure 4. “Valley” Current-Limit Threshold Point
Figure 3. Pulse-Skipping/Discontinuous Crossover Point
switching frequency. The on-time guaranteed in the
Electrical Characteristics table is influenced by switch-
ing delays in the external high-side MOSFET. Resistive
losses—including the inductor, both MOSFETs, output
capacitor ESR, and PC board copper losses in the out-
put and ground—tend to raise the switching frequency
at higher output currents. Switch dead-time can
increase the effective on-time, reducing the switching
frequency. This effect occurs only in PWM mode (SKIP
= high) when the inductor current reverses at light or
negative load currents. With reversed inductor current,
the inductor’s EMF causes LX to go high earlier than
normal, extending the on-time by a period equal to the
DH-rising dead-time.
between continuous and discontinuous inductor-cur-
rent operation. For an input voltage (V+) range of 7V to
24V, this threshold is relatively constant, with only a
minor dependence on the input voltage:
K × V
V + − V
OUT
OUT
I
≈
LOAD(SKIP)
2L
V +
where K is the on-time scale factor (Table 3). The load-
current level at which PFM/PWM crossover occurs,
I , is equal to 1/2 the peak-to-peak ripple cur-
LOAD(SKIP)
rent, which is a function of the inductor value (Figure 3).
For example, in the standard application circuit with
K = 3.3µs (300kHz), V
= 12V, V
= 1.6V, and
OUT
BATT
When the controller operates in continuous mode, the
dead-time is no longer a factor and the actual switching
frequency is:
L = 0.68µH, switchover to pulse-skipping operation
occurs at I = 2.3A or about 1/4 full load. The
crossover point occurs at an even lower value if a
swinging (soft-saturation) inductor is used.
LOAD
ƒ = (V
+ V
) / [t
× (V+ + V
– V
)]
OUT
DROP1
ON
DROP1
DROP2
The switching waveforms may appear noisy and asyn-
chronous when light loading causes pulse-skipping
operation; this is a normal operating condition that
improves light-load efficiency. Trade-offs in PFM noise
vs. light-load efficiency are made by varying the induc-
tor value. Generally, low inductor values produce a
broader efficiency vs. load curve, while higher values
result in higher full-load efficiency (assuming that the
coil resistance remains fixed) and less output voltage
ripple. Penalties for using higher inductor values
include larger physical size and degraded load-tran-
sient response (especially at low input voltage levels).
where V
is the sum of the parasitic voltage drops
DROP1
in the inductor discharge path, including synchronous
rectifier, inductor, and PC board resistances; V is
DROP2
the sum of the resistances in the charging path, includ-
ing high-side switch, inductor, and PC board resis-
tances; and t
MAX1716/MAX1854/MAX1855.
is the on-time calculated by the
ON
Automatic Pulse-Skipping Switchover
In skip mode (SKIP = low), an inherent automatic
switchover to PFM takes place at light loads (Figure 3).
This switchover is controlled by a comparator that trun-
cates the low-side switch on-time at the inductor cur-
rent’s zero crossing. This mechanism causes the
threshold between pulse-skipping PFM and nonskip-
ping PWM operation to coincide with the boundary
SKIP
Forced-PWM Mode (
= High)
The low-noise, forced-PWM mode (SKIP driven high)
disables the zero-crossing comparator that controls the
______________________________________________________________________________________ 17
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Table 4. Operating Mode Truth Table
SHDN
SKIP
DL
MODE
COMMENTS
Micropower shutdown state.
0
X
High
Shutdown
Automatic switchover from PWM mode to pulse-skipping
PFM mode at light loads. Prevents inductor current from
recirculating into the input.
Normal
Operation
1
1
GND
Switching
Switching
Switching
Low-noise forced-PWM mode causes inductor current to
reverse at light loads and suppresses pulse-skipping
operation.
V
Forced PWM
CC
Test mode with overvoltage, undervoltage, and thermal
shutdown faults disabled. Otherwise, the converter
operates as if SKIP = GND.
No-Fault Test
Mode
1
Below GND
X = Don’t care
low-side switch on-time. The resulting low-side gate-
drive waveform is forced to be the complement of the
high-side gate-drive waveform. This, in turn causes the
inductor current to reverse at light loads, as the PWM
therefore tracks the positive current limit when ILIM is
adjusted.
The MAX1716/MAX1854/MAX1855 measure the current
by sensing the voltage between CS and PGND.
Connect an external sense resistor between the source
of the low-side N-channel MOSFET and PGND. This
same resistor is also used to generate the input voltage
for the VPS input (see Setting Voltage Positioning).
Reducing the sense voltage increases the relative mea-
surement error. However, the configuration eliminates
the uncertainty of using the low-side MOSFET on-resis-
tance to measure the current, so the resulting current-
limit tolerance is tighter when sensing with a 1% sense
resistor.
loop strives to maintain a duty ratio of V
/V+. The
OUT
benefit of forced-PWM mode is to keep the switching
frequency nearly constant, but it results in higher no-
load supply current that can be 10mA to 40mA,
depending on the external MOSFETs and switching fre-
quency.
Forced-PWM mode is most useful for minimizing audio-
frequency noise and improving the cross-regulation of
multiple-output applications that use a flyback trans-
former or coupled inductor.
In some applications, the signal required for voltage
positioning is much smaller than the minimum current-
limit voltage (50mV). There are two options for address-
ing this issue. One method is to use a larger
current-sense resistor to develop the appropriate cur-
rent-limit voltage and divide down this signal to obtain
the desired VPS input. This solution provides the maxi-
mum current-limit accuracy. Alternatively, select a
sense resistance to generate the desired VPS voltage
and connect CS to LX. This results in minimum power-
dissipation with reduced current-limit accuracy. The
Current-Limit Circuit (ILIM)
The current-limit circuit employs a unique “valley” cur-
rent-sensing algorithm. If the current-sense signal is
above the current-limit threshold, the MAX1716/
MAX1854/MAX1855 will not initiate a new cycle (Figure
4). The actual peak current is greater than the current-
limit threshold by an amount equal to the inductor rip-
ple current. Therefore, the exact current-limit
characteristic and maximum load capability are a func-
tion of the current-limit threshold, inductor value, and
input voltage. The reward for this uncertainty is robust,
loss-less overcurrent sensing. When combined with the
UVP protection circuit, this current-limit method is effec-
tive in almost every circumstance.
default 120mV current limit (ILIM = V ) accommo-
CC
dates current-limit detection using the low-side power
MOSFET and low-value sense resistor.
The voltage at ILIM sets the current-limit threshold. For
voltages from 500mV to 2V, the current-limit threshold
There is also a negative current limit that prevents
excessive reverse inductor currents when V
is sink-
OUT
voltage is precisely 0.1 × V
. Set this voltage with a
ILIM
ing current. The negative current-limit threshold is set to
approximately 120% of the positive current limit and
resistive divider between REF and GND. The current-
limit threshold defaults to 120mV when ILIM is tied to
18 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
drain to the gate of the low-side synchronous-rectifier
MOSFET. However, for high-current applications, some
+5V
combinations of high- and low-side FETs may cause
excessive gate-drain coupling, leading to poor efficien-
cy, EMI, and shoot-through currents. This is often reme-
died by adding a resistor in series with BST, which
increases the turn-on time of the high-side FET without
degrading the turn-off time (Figure 5).
V
BATT
5Ω TYP
BST
DH
LX
DAC Converter (D0–D4)
The digital-to-analog converter (DAC) programs the
output voltage. It receives a preset digital code from
the VID inputs (D0–D4), which contain weak internal
pullups to eliminate external resistors. They can also be
driven by digital logic, general-purpose I/O, or an exter-
nal multiplexer. The available DAC codes and resulting
output voltages (Table 5) are compatible with Intel’s
mobile Pentium III™ specifications.
MAX1716
MAX1854
MAX1855
Figure 5. Reducing the Switching-Node Rise Time
D0-D4 can be changed while the regulator is active, ini-
tiating a transition to a new output voltage level.
Change D0–D4 synchronously to avoid errors during a
V
. The logic threshold for switchover to the 120mV
CC
default value is approximately V
- 1V.
CC
Carefully observe the PC board layout guidelines to
ensure that noise and DC errors don’t corrupt the cur-
rent-sense signals seen by CS and PGND. The IC must
be mounted close to the current-sense resistor with
short, direct traces making a Kelvin sense connection.
V
transition. If the skew between bits exceeds 1µs,
OUT
incorrect DAC outputs may cause a partial transition to
the wrong voltage level, followed by the intended tran-
sition to the correct voltage level, lengthening the over-
all transition time.
When changing the MAX1855 DAC code while pow-
ered up, the undervoltage protection feature can be
activated if the code change increases the output volt-
age by more than 120%. For example, a transition from
any DAC code below 0.8V to 1.75V will activate the
undervoltage protection. In the preceding example,
transitioning from 0.8V to 1.35V and then from 1.35V to
1.75V avoids activating the undervoltage protection
feature.
MOSFET Gate Drivers (DH and DL)
The DH and DL drivers are optimized for driving mod-
erate-sized, high-side and larger, low-side power
MOSFETs. This is consistent with the low duty factor
seen in the notebook CPU environment, where a large
V
- V
differential exists. An adaptive dead-time
OUT
IN
circuit monitors the DL output and prevents the high-
side FET from turning on until DL is fully off. There must
be a low-resistance, low-inductance path from the DL
driver to the MOSFET gate in order for the adaptive
dead-time circuit to work properly. Otherwise, the
sense circuitry in the MAX1716/MAX1854/MAX1855 will
interpret the MOSFET gate as “off” while there is actual-
ly still charge left on the gate. Use very short, wide
traces measuring 10 to 20 squares (50 to 100 mils wide
if the MOSFET is 1 inch from the device). The dead
time at the other edge (DH turning off) is determined by
a fixed 35ns internal delay.
SHDN
Shutdown (
)
Drive SHDN low to force the MAX1716/MAX1854/
MAX1855 into a low-current shutdown state. Shutdown
turns on the low-side MOSFET by forcing the DL gate
driver high, which discharges the output capacitor and
forces the output to ground. Drive or connect SHDN to
V
for normal operation. A rising edge on SHDN
CC
clears the fault latch.
Power-on Reset
Power-on reset (POR) occurs when V rises above
approximately 2V. This resets the fault latch and soft-
start counter, preparing the regulator for operation.
The internal pulldown transistor that drives DL low is
robust, with a 0.5Ω (typ) on-resistance. This helps pre-
vent DL from being pulled up during the fast rise time
of the LX node, due to capacitive coupling from the
CC
Pentium III is a trademark of Intel Corp.
______________________________________________________________________________________ 19
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Table 5. Output Voltage vs. DAC Codes
OUTPUT VOLTAGE
D4
D3
D2
D1
D0
MAX1716
No CPU*
No CPU*
No CPU*
No CPU*
No CPU*
No CPU*
No CPU*
No CPU*
1.600V
1.550V
1.500V
1.450V
1.400V
1.350V
1.300V
No CPU*
1.275V
1.250V
1.225V
1.200V
1.175V
1.150V
1.125V
1.100V
1.075V
1.050V
1.025V
1.000V
0.975V
0.950V
0.925V
No CPU*
MAX1854
2.000V
1.950V
1.900V
1.850V
1.800V
1.750V
1.700V
1.650V
1.600V
1.550V
1.500V
1.450V
1.400V
1.350V
1.300V
No CPU*
1.275V
1.250V
1.225V
1.200V
1.175V
1.150V
1.125V
1.100V
1.075V
1.050V
1.025V
1.000V
0.975V
0.950V
0.925V
No CPU*
MAX1855
1.750V
1.700V
1.650V
1.600V
1.550V
1.500V
1.450V
1.400V
1.350V
1.300V
1.250V
1.200V
1.150V
1.100V
1.050V
1.000V
0.975V
0.950V
0.925V
0.900V
0.875V
0.850V
0.825V
0.800V
0.775V
0.750V
0.725V
0.700V
0.675V
0.650V
0.625V
0.600V
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
*Note: In the no-CPU state, DH and DL are held low.
make valid decisions. To protect the output from over-
voltage faults, DL is forced high in this mode. This will
force the output to GND and results in large negative
Undervoltage Lockout and Soft-Start
V
undervoltage lockout (UVLO) circuitry inhibits
CC
switching, forces VGATE low, and drives the DL output
high. If the V voltage drops below 4.2V, it is
inductor current that pulls the output below GND. If V
CC
CC
is likely to drop in this fashion, the output can be
assumed that there is not enough supply voltage to
20 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
clamped with a Schottky diode to GND to reduce the
negative excursion.
UVP can be defeated through the no-fault test mode
(see No-Fault Test Mode).
To ensure correct startup, V+ should be present before
CC
regulation without V+ present, the fault latch will trip.
Thermal Fault Protection
The MAX1716/MAX1854/MAX1855 feature a thermal
fault protection circuit. When the temperature rises
above +150°C, the DL low-side gate-driver output
V
. If the converter attempts to bring the output into
After V rises above 4.2V, an internal digital soft-start
CC
timer begins to ramp up the maximum allowed current
limit. The ramp occurs in five steps: 20%, 40%, 60%,
80%, and 100%, with 100% load current available after
1.7ms 50%.
latches high until SHDN toggles or V
pulses below
CC
1V. The threshold has +10°C of thermal hysteresis,
which prevents the regulator from restarting until the
die cools off.
Power-Good Output (VGATE)
VGATE is the open-drain output of a window compara-
tor. This power-good output remains high impedance
as long as the output voltage is within 10% of the reg-
ulation voltage. When the output voltage is greater than
or less than the 10% window limits, the internal MOS-
FET is activated and pulls the output low. Any fault con-
dition forces VGATE low until the fault is cleared.
VGATE is also low in shutdown, undervoltage lockout,
and during soft-start. For logic-level output voltages,
connect an external pullup resistor between VGATE
No-Fault Test Mode
The over/undervoltage protection features can compli-
cate the process of debugging prototype breadboards
since there are at most a few milliseconds in which to
determine what went wrong. Therefore, a test mode is
provided to disable the OVP, UVP, and thermal shut-
down features, and clear the fault latch if it has been
set. The PWM operates as if SKIP were low (SKIP
mode).
The no-fault test mode is entered by sinking 1.5mA
from SKIP through an external negative voltage source
in series with a resistor. SKIP is clamped to GND with a
silicon diode, so choose the resistor value equal to
and V
(or V ). A 100kΩ resistor works well in most
DD
CC
applications.
(V
- 0.65V) / 1.5mA.
FORCE
Output Overvoltage Protection
(MAX1716/MAX1855 only)
Design Procedure
The overvoltage protection (OVP) circuit is designed to
protect against a shorted high-side MOSFET by draw-
ing high current and activating the battery’s protection
circuit. The output voltage is continuously monitored for
overvoltage. If the output exceeds the OVP threshold
(1.9V with the MAX1716, 2.0V with the MAX1855), OVP
is triggered and the circuit shuts down. The DL low-
side gate-driver output latches high until SHDN toggles
Firmly establish the input voltage range and maximum
load current before choosing a switching frequency
and inductor operating point (ripple-current ratio). The
primary design trade-off lies in choosing a good switch-
ing frequency and inductor operating point. The follow-
ing four factors dictate the design:
Input voltage range: The maximum value (V+
)
(MAX)
must accommodate the worst-case high AC-adapter
voltage. The minimum value (V+ ) must account for
or V
pulses below 1V. This action turns on the syn-
CC
(MIN)
chronous-rectifier MOSFET with 100% duty cycle and,
in turn, rapidly discharges the output filter capacitor,
forcing the output to ground. If the condition that
caused the overvoltage (such as a shorted high-side
MOSFET) persists, the battery’s internal protection cir-
cuit will engage.
the lowest input voltage after drops due to connectors,
fuses, and battery selector switches. If there is a choice
at all, lower input voltages result in better efficiency.
Maximum load current: There are two values to con-
sider. The peak load current (I
) determines
LOAD(MAX)
the instantaneous component stresses and filtering
requirements, and thus drives output capacitor selec-
tion, inductor saturation rating, and the design of the
current-limit circuit. The continuous load current
OVP can be defeated through the no-fault test mode
(see No-Fault Test Mode).
Output Undervoltage Protection
The output undervoltage protection (UVP) function is
similar to foldback current limiting, but employs a timer
rather than a variable current limit. If the regulator’s out-
put voltage is under 40% of the nominal value, anytime
after the 20ms undervoltage fault-blanking time, the
PWM is latched off and won’t restart until SHDN toggles
(I
) determines the thermal stresses and thus dri-
LOAD
ves the selection of input capacitors, MOSFETs, and
other critical heat-contributing components. Modern
notebook CPUs generally exhibit I
80%.
= I
×
LOAD(MAX)
LOAD
Switching frequency: This choice determines the
basic trade-off between size and efficiency. The opti-
or V
pulses below 1V.
CC
______________________________________________________________________________________ 21
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
mal frequency is largely a function of maximum input
voltage, due to MOSFET switching losses that are pro-
portional to frequency and V+2. The optimum frequency
is also a moving target, due to rapid improvements in
MOSFET technology that are making higher frequen-
cies more practical.
Find a low-loss inductor having the lowest possible DC
resistance that fits in the allotted dimensions. Ferrite
cores are often the best choice, although powdered
iron is inexpensive and can work well at 200kHz. The
core must be large enough not to saturate at the peak
inductor current (IPEAK).
Inductor operating point: This choice provides trade-
offs between size vs. efficiency. Low inductor values
cause large ripple currents, resulting in the smallest
size, but poor efficiency and high output noise. The
minimum practical inductor value is one that causes the
circuit to operate at the edge of critical conduction
(where the inductor current just touches zero with every
cycle at maximum load). Inductor values lower than this
grant no further size-reduction benefit.
I
= I
+ (I
× LIR / 2)
PEAK
LOAD(MAX)
LOAD(MAX)
Setting the Current Limit
The minimum current-limit threshold must be great
enough to support the maximum load current when the
current limit is at the minimum tolerance value. The val-
ley of the inductor current occurs at I
half of the ripple current; therefore:
minus
LOAD(MAX)
I
> I
- (I
× LIR / 2)
LOAD(MAX)
LIMIT(LOW)
LOAD(MAX)
The MAX1716/MAX1854/MAX1855’s pulse-skipping
algorithm initiates skip mode at the critical-conduction
point. Thus, the inductor operating point also deter-
mines the load-current value at which PFM/PWM
switchover occurs. The optimum point is usually found
between 20% and 50% ripple current.
where I
equals the minimum current-limit
LIMIT(LOW)
threshold voltage divided by R
. For the 120mV
SENSE
default setting, the minimum current-limit threshold is
110mV.
Connect ILIM to V
for a default 120mV current-limit
CC
threshold. In the adjustable mode, the current-limit
threshold is precisely 1/10th the voltage seen at ILIM.
For an adjustable threshold, connect a resistive divider
from REF to GND, with ILIM connected to the center
tap. The external 0.5V to 2.0V adjustment range corre-
sponds to a current-limit threshold of 50mV to 200mV.
When adjusting the current limit, use 1% tolerance
resistors and a 10µA divider current to prevent a signifi-
cant increase of errors in the current-limit value.
The inductor ripple current impacts transient-response
performance, especially at low V - V
differentials.
OUT
IN
Low inductor values allow the inductor current to slew
faster, replenishing charge removed from the output fil-
ter capacitors by a sudden load step. The amount of
output sag is also a function of the maximum duty fac-
tor, which can be calculated from the on-time and mini-
mum off-time:
Output Capacitor Selection
The output filter capacitor must have low enough effec-
tive series resistance (ESR) to meet output ripple and
load-transient requirements, yet have high enough ESR
to satisfy stability requirements. Also, the capacitance
value must be high enough to absorb the inductor
energy going from a full-load to no-load condition with-
out tripping the overvoltage protection circuit.
V
V +
2
OUT
(I
− I
)
× L × K ×
− t
OFF(MIN)
LOAD1 LOAD2
V
=
SAG
V + − V
OUT
2 × C
× V
× K ×
− t
OFF(MIN)
OUT
OUT
V +
where t
is the minimum off-time (see Electrical
Characteristics), and K is from Table 3.
OFF(MIN)
In CPU V
converters and other applications where
CORE
Inductor Selection
the output is subject to violent load transients, the out-
put capacitor’s size typically depends on how much
ESR is needed to prevent the output from dipping too
low under a load transient. Ignoring the sag due to
finite capacitance:
The switching frequency and operating point (% ripple
or LIR) determine the inductor value as follows:
V
× V + −V
OUT
(
OUT
)
L =
R
= V
/ I
V + × ƒSW × LIR × I
ESR
STEP(MAX) LOAD(MAX)
LOAD(MAX)
The actual µF capacitance value required relates to the
physical size needed to achieve low ESR, as well as to
the chemistry of the capacitor technology. Thus, the
capacitor is usually selected by ESR and voltage rating
rather than by capacitance value (this is true of tanta-
lums, OS-CONs, and other electrolytics).
Example: I
SW
= 18A, V = 7V, V
= 1.6V,
OUT
LOAD(MAX)
= 300kHz, 30% ripple current or LIR = 0.3.
IN
f
1.6V× (7V − 1.6V)
L =
= 0.76µH
7V × 300kHz × 0.30 × 18A
22 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
When using low-capacity filter capacitors, such as
ceramic or polymer types, capacitor size is usually
put voltage to rise above or fall below the tolerance
limit.
determined by the capacity needed to prevent V
SAG,
The easiest method for checking stability is to apply a
very fast zero-to-max load transient and carefully
observe the output voltage ripple envelope for over-
shoot and ringing. It can help to simultaneously monitor
the inductor current with an AC current probe. Don’t
allow more than one cycle of ringing after the initial
step-response under/overshoot.
and V
from causing problems during load tran-
SOAR
sients. Generally, once enough capacitance is added
to meet the overshoot requirement, undershoot at the
rising load edge is no longer a problem (see the V
SAG
equation in the Design Procedure). The amount of over-
shoot due to stored inductor energy can be calculated
as:
Input Capacitor Selection
V
≈ (L × I
2) / (2 × C
× V
)
SOAR
PEAK
OUT
OUT
The input capacitor must meet the ripple-current
where I
is the peak inductor current.
PEAK
requirement (I
) imposed by the switching currents
defined by the following equation:
RMS
Output Capacitor Stability Considerations
Stability is determined by the value of the ESR zero rel-
ative to the switching frequency. The boundary of insta-
bility is given by the following equation:
V
V + − V
OUT
(
)
OUT
I
= I
LOAD
RMS
V +
ƒ
= ƒ
/ π
SW
ESR
For most applications, nontantalum chemistries (ceram-
ic, aluminum, or OS-CON) are preferred due to their
resistance to inrush surge currents typical of systems
with a mechanical switch or connector in series with the
input. If the MAX1716/MAX1854/MAX1855 are operated
as the second stage of a two-stage power-conversion
system, tantalum input capacitors are acceptable. In
either configuration, choose an input capacitor that
exhibits <+10°C temperature rise at the RMS input cur-
rent for optimal circuit longevity.
where: ƒ
= 1 / (2 × π × R
× C
)
ESR
ESR
OUT
For a standard 300kHz application, the ESR zero fre-
quency must be well below 95kHz, preferably below
50kHz. Tantalum, Sanyo POSCAP, and Panasonic SP
capacitors in widespread use at the time of this publi-
cation have typical ESR zero frequencies below 30kHz.
In the standard application used for inductor selection,
the ESR needed to support a 50mVp-p ripple is
50mV/(18A × 0.3) = 9.3mΩ. Five 220µF/2.5V Panasonic
SP capacitors in parallel provide 3mΩ (max) ESR. Their
typical combined ESR results in a zero at 48kHz.
Power MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability
(>18A) when using high-voltage (>20V) AC adapters.
Low-current applications usually require less attention.
Don’t put high-value ceramic capacitors directly across
the output without taking precautions to ensure stability.
Ceramic capacitors have a high ESR zero frequency
and may cause erratic, unstable operation. However,
it’s easy to add enough series resistance by placing
the capacitors a couple of inches downstream from the
junction of the inductor and FB pin.
For maximum efficiency, choose a high-side MOSFET
that has conduction losses equal to the switching loss-
es at the average input voltage (3 Li+ cells = 11V, 4 Li+
cells = 14V). Check to ensure that conduction losses
plus switching losses don’t exceed the package ratings
or violate the overall thermal budget at the maximum
and minimum input voltages.
Unstable operation manifests itself in two related but
distinctly different ways: double-pulsing and fast-feed-
back loop instability.
Double-pulsing occurs due to noise on the output or
because the ESR is so low that there isn’t enough volt-
age ramp in the output voltage signal. This “fools” the
error comparator into triggering a new cycle immedi-
ately after the minimum off-time period has expired.
Double-pulsing is more annoying than harmful, result-
ing in nothing worse than increased output ripple.
However, it can indicate the possible presence of loop
instability, which is caused by insufficient ESR.
Choose a low-side MOSFET that has the lowest possi-
ble on-resistance (R
), comes in a moderate-
DS(ON)
sized package (i.e., one or two SO-8s, DPAK or
D2PAK), and is reasonably priced. Make sure that the
DL gate driver can supply sufficient current to support
the gate charge and the current injected into the para-
sitic gate-to-drain capacitor caused by the high-side
MOSFET turning on; otherwise, cross-conduction prob-
lems may occur.
Loop instability can result in oscillations at the output
after line or load perturbations that can cause the out-
______________________________________________________________________________________ 23
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
tect against this possibility, “overdesign” the circuit to
MOSFET Power Dissipation
Worst-case conduction losses occur at the duty factor
extremes. For the high-side MOSFET (Q1), the worst-
case power dissipation due to resistance occurs at the
minimum input voltage:
tolerate:
I
= I
+ (I
× LIR/2)
LOAD
LIMIT(HIGH)
LOAD(MAX)
where I
is the maximum valley current
LIMIT(HIGH)
allowed by the current-limit circuit, including threshold
tolerance and on-resistance variation. The MOSFETs
must be very well heatsinked to handle the overload
power dissipation.
PD (Q1 Resistive) = (V
/V+) × I
2 × R
OUT
LOAD DS(ON)
Generally, a small high-side MOSFET is desired to
reduce switching losses at high input voltages.
However, the R
required to stay within package
DS(ON)
Choose a Schottky diode (D1) with a forward voltage
low enough to prevent the low-side MOSFET body
diode from turning on during the dead-time. As a gen-
eral rule, select a diode with a DC current rating equal
to 1/3 of the load current. This diode is optional and
can be removed if efficiency isn’t critical.
power-dissipation often limits how small the MOSFET
can be. Again, the optimum occurs when the switching
losses equal the conduction (R
) losses. High-
DS(ON)
side switching losses don’t usually become an issue
until the input is greater than approximately 15V.
Calculating the power dissipation in the high-side MOS-
FET (Q1) due to switching losses is difficult since it
must allow for difficult quantifying factors that influence
the turn-on and turn-off times. These factors include the
internal gate resistance, gate charge, threshold volt-
age, source inductance, and PC board layout charac-
teristics. The following switching-loss calculation
provides only a very rough estimate and is no substi-
tute for breadboard evaluation, preferably including
verification using a thermocouple mounted on Q1:
Setting Voltage Positioning (VPS)
Voltage positioning dynamically changes the output
voltage set point in response to the load current. When
the output is loaded, the signal fed back from the VPS
input adjusts the output voltage set point, thereby
decreasing power dissipation. The load transient
response of this control loop is extremely fast yet well
controlled, so the amount of voltage change can be
accurately confined within the limits stipulated in the
microprocessor power-supply guidelines. To under-
stand the benefits of dynamically adjusting the output
voltage, see Voltage Positioning and Effective Efficiency.
2
C
V +
f
I
RSS (MAX) SW LOAD
PD
(Q1SWITCHING)
=
I
GATE
The amount of voltage change is set by a small-value
where C
GATE
(1A typ).
is the reverse transfer capacitance of Q1,
sense resistor (R
). Place this resistor between the
RSS
SENSE
and I
is the peak gate-drive source/sink current
source of the low-side MOSFET and PGND. The volt-
age developed across this resistor (V
output voltage as follows:
) relates to the
VPS
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied, due to the squared term in the
V
OUT
= V
(1 + A
V
)
OUT(PROG)
VPS VPS
where V
set by the DAC code (Table 5), and the voltage-posi-
tioning gain factor (A ) is 0.175%/mV (see Electrical
is the programmed output voltage
OUT(PROG)
C × V2 × ƒ
switching-loss equation. If the high-side
SW
MOSFET chosen for adequate R
at low battery
DS(ON)
VPS
voltages becomes extraordinarily hot when biased from
Characteristics). The MAX1716/MAX1854/MAX1855
contain internal clamps to limit the voltage positioning
between 10% below and 2% above the programmed
output voltage.
V+
, consider choosing another MOSFET with
(MAX)
lower parasitic capacitance.
For the low-side MOSFET (Q2), the worst-case power
dissipation always occurs at maximum input voltage:
The voltage present at VPS can be set in several differ-
ent ways. Connect VPS directly to CS through a 1kΩ
resistor, or through a resistive divider. When connected
directly to CS, the output voltage position is:
2
V
OUT
V +
PD
(Q2 RESISTIVE)
=
I −
I
R
DS(ON)
LOAD
(MAX)
V
= V = -I
R
(1 - D)
VPS
CS
LOAD SENSE
The worst case for MOSFET power dissipation occurs
under heavy overloads that are greater than
LOAD(MAX)
where D = V
/ V+ is the regulator’s duty cycle.
OUT
I
but are not quite high enough to exceed
However, since the ratio of the output to input voltage is
usually relatively large, the effect of the duty cycle on
the circuit’s performance is not significant. Therefore,
the current limit and cause the fault latch to trip. To pro-
24 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
N
DL
CS
REF
VPS
C
REF
0.22µF
R3
MAX1716
MAX1854
MAX1855
MAX1716
MAX1854
MAX1855
Q2
R1
R1
R2
R
SENSE
DL
CS
VPS
R
SENSE
PGND
PGND
a) SCALED VOLTAGE POSITION SIGNAL
b) POSITIVE NO-LOAD VOLTAGE POSITIONING
Figure 6. Voltage-Positioning Configurations
the complete expression for the voltage-positioned out-
put depends only upon the value of the current-sense
resistor and the load current:
to VPS to PGND (Figure 6b). Set R1 to 1kΩ, and use the
following equation to calculate R2:
ESR
COUT
R2 = R1
V
OUT
≈ V
(1 - A
I
R
)
OUT(PROG)
VPS LOAD SENSE
A
V
R
− ESR
VPS OUT(PROG) SENSE COUT
Some applications require the addition of a positive off-
set to the output voltage to ensure that it remains within
the load specifications. The positive offset may be gen-
erated by connecting a resistive divider from REF to
VPS to CS (Figure 6a). Set R1 to 1kΩ, and use the fol-
lowing equation to calculate R3:
The MAX1716/MAX1854/MAX1855 voltage-positioning
circuit has several advantages over older circuits,
which added a fixed voltage offset on the sense point
and used a low-value resistor in series with the output.
The new circuit can use the same current-sense resis-
tor for both voltage positioning and current-limit detec-
tion. This simultaneously provides accurate current
limiting and voltage positioning. Since the new circuit
adjusts the output voltage within the control loop, the
voltage-positioning signal may be internally amplified.
The additional gain allows the use of low-value current-
sense resistors, so the power dissipated in this sense
resistor is significantly lower than a single resistor con-
nected directly in series with the output.
V
A
V
REF VPS OUT(PROG)
R3 = R1
− 1
V
OFFSET
where V
is typically 2.0V, and V
is the
OFFSET
REF
required positive offset voltage. When attenuating the
voltage-positioning signal, replace R1 with the parallel
combination of R1 and R2 (R1//R2), where R2 is the
attenuation resistor (Figure 6b).
After a load transient, the output instantly changes by
Voltage-Positioning Compensation (CC)
The voltage-positioning compensation capacitor filters
the amplified VPS signal, allowing the user to adjust the
dynamics of the voltage-positioning loop. The imped-
ance at this node is approximately 200kΩ, so the pole
provided by this node can be approximated by 1 / (2 ×
π × RC). The response time is set with a 47pF to
1000pF capacitor from CC to GND.
ESR
× ∆I
. Setting the load-dependent volt-
LOAD
COUT
age position to match this initial load step allows the
output voltage to change by ESR and
× ∆I
COUT
LOAD
stay there as long as the load remains unchanged (see
Voltage Positioning and Effective Efficiency). To set the
voltage position equal to the initial voltage drop gener-
ated by the output capacitor’s ESR, select R
=
SENSE
ESR
/ (V
× A ).
VPS
COUT
OUT(PROG)
For applications using a larger current-sense resistor,
adjust V by connecting a resistive divider from CS
VPS
______________________________________________________________________________________ 25
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
VOLTAGE POSITIONING THE OUTPUT
CAPACITOR SOAR
(ENERGY IN L
MAX1716-Figure 07
TRANSFERRED TO C
)
OUT
ESR STEP-DOWN
AND STEP-UP
STEP
A
B
1.6V
1.6V
(I
X ESR)
V
OUT
RECOVERY
CAPACITIVE SAG
(dV/dt = I /C
)
OUT OUT
I
A. CONVENTIONAL CONVERTER (50mV/div)
B. VOLTAGE POSITIONED OUTPUT (50mV/div)
LOAD
Figure 7. Voltage Positioning the Output
Figure 8. Transient-Response Regions
requires only twice the ESR. Since the ESR specifica-
tion is achieved by paralleling several capacitors, fewer
units are needed for the voltage-positioned circuit.
________________Applications Issues
Voltage Positioning and
Effective Efficiency
An additional benefit of voltage positioning is reduced
power consumption at high load currents. Because the
output voltage is lower under load, the CPU draws less
current. The result is lower power dissipation in the
CPU, although some extra power is dissipated in
Powering new mobile processors requires careful
attention to detail to reduce cost, size, and power dissi-
pation. As CPUs became more power hungry, it was
recognized that even the fastest DC-DC converters
were inadequate to handle the transient power require-
ments. After a load transient, the output instantly
R
. For a nominal 1.6V, 18A output (R
=
LOAD
SENSE
89mΩ), reducing the output voltage 2.9% gives an out-
put voltage of 1.55V and an output current of 17.44A.
Given these values, CPU power consumption is
reduced from 28.8W to 27.03W. The additional power
changes by ESR
× ∆I
. Conventional DC-DC
COUT
LOAD
converters respond by regulating the output voltage
back to its nominal state after the load transient occurs
(Figure 7). However, the CPU only requires that the out-
put voltage remain above a specified minimum value.
Dynamically positioning the output voltage to this lower
limit allows the use of fewer output capacitors and
reduces power consumption under load.
consumption of R
is:
SENSE
2.5mΩ × (17.44A)2 = 0.76W
and the overall power savings is as follows:
28.8W - (27.03W + 0.76W) = 1.01W
For a conventional (nonvoltage-positioned) circuit, the
total voltage change is:
In effect, 1.8W of CPU dissipation is saved and the
power supply dissipates much of the savings, but both
the net savings and the transfer of heat away from the
CPU are beneficial. Effective efficiency is defined as
the efficiency required of a nonvoltage-positioned cir-
cuit to equal the total dissipation of a voltage-posi-
tioned circuit for a given CPU operating condition.
V
P-P1
= 2 × (ESR
× ∆I ) + V + V
LOAD SAG SOAR
COUT
where V
and V
are defined in Figure 8. Setting
SOAR
SAG
the converter to regulate at a lower voltage when under
load allows a larger voltage step when the output cur-
rent suddenly decreases (Figure 7). So the total voltage
change for a voltage positioned circuit is:
Calculate effective efficiency as follows:
V
= (ESR
× ∆I
) + V
+ V
1) Start with the efficiency data for the positioned
P-P2
COUT
LOAD
SAG SOAR
circuit (V , I , V
, I
).
IN IN OUT OUT
where V
and V
are defined in the Design
SOAR
SAG
Procedure. Since the amplitudes are the same for both
circuits (V = V ), the voltage-positioned circuit
2) Model the load resistance for each data point:
P-P1
P-P2
26 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
R
= V
/ I
where V
and V
are the parasitic voltage
DROP2
LOAD
OUT OUT
DROP1
drops in the discharge and charge paths (see On-Time
3) Calculate the output current that would exist for
each R data point in a nonpositioned
One-Shot),
t
is from the Electrical
OFF(MIN)
LOAD
Characteristics table, and K is taken from Table 3. The
application:
absolute minimum input voltage is calculated with h = 1.
I
= V / R
NP LOAD
NP
If the calculated V
is greater than the required
IN(MIN)
where V = 1.6V (in this example).
NP
minimum input voltage, then reduce the operating fre-
quency or add output capacitance to obtain an accept-
4) Calculate effective efficiency as:
able V
. If operation near dropout is anticipated,
SAG
Effective efficiency = (V
calculated nonpositioned power output divided by
the measured voltage-positioned power input.
× I ) / (V × I ) =
NP IN IN
NP
calculate V
sponse.
to be sure of adequate transient re-
SAG
Dropout Design Example:
5) Plot the efficiency data point at the nonpositioned
V
OUT
= 1.6V
current, I
.
NP
ƒ
= 550kHz
The effective efficiency of voltage-positioned circuits is
SW
shown in the Typical Operating Characteristics.
K = 1.8µs, worst-case K = 1.58µs
= 500ns
t
Dropout Performance
The output-voltage adjustable range for continuous-
conduction operation is restricted by the nonadjustable
500ns (max) minimum off-time one-shot. For best
dropout performance, use the slower (200kHz) on-time
settings. When working with low input voltages, the
duty-factor limit must be calculated using worst-case
values for on- and off-times. Manufacturing tolerances
and internal propagation delays introduce an error to
the TON K-factor. This error is greater at higher fre-
quencies (Table 3). Also, keep in mind that transient
response performance of buck regulators operated
close to dropout is poor, and bulk output capacitance
OFF(MIN)
V
= V
= 100mV
DROP1
DROP2
h = 1.5
V
= [(1.6V + 0.1V) / (1 - (0.5µs × 1.5 / 1.58µs))] +
IN(MIN)
0.1V - 0.1V = 3.2V
Calculating again with h = 1 gives the absolute limit of
dropout:
V
= [(1.6V + 0.1V) / (1 - (0.5µs × 1.0 / 1.58µs))] +
IN(MIN)
0.1V - 0.1V = 2.5V
Therefore, V must be greater than 2.5V, even with
IN
very large output capacitance, and a practical input
voltage with reasonable output capacitance would be
3.2V.
must often be added (see the V
Design Procedure section).
equation in the
SAG
The absolute point of dropout is when the inductor cur-
rent ramps down during the minimum off-time (∆I
Adjusting V
OUT
with a Resistive Divider
)
DOWN
UP
The output voltage can be adjusted with a resistive-
divider rather than the DAC if desired (Figure 9). The
drawback is that the on-time doesn’t automatically
receive correct compensation for changing output volt-
age levels. This can result in variable switching fre-
quency as the resistor ratio is changed, and/or
excessive switching frequency. The equation for adjust-
ing the output voltage is:
as much as it ramps up during the on-time (∆I ). The
ratio h = ∆I / ∆I
is an indicator of ability to slew
UP
DOWN
the inductor current higher in response to increased
load and must always be >1. As h approaches 1, the
absolute minimum dropout point, the inductor current
cannot increase as much during each switching cycle,
and V
greatly increases unless additional output
SAG
capacitance is used.
V
OUT
= V (1 + R1 / (R2 || R ))
FB INT
A reasonable minimum value for h is 1.5, but adjusting
where V
INT
is the currently selected DAC value, and
FB
this up or down allows trade-offs between V , output
SAG
R
is the FB input resistance. In resistor-adjusted cir-
capacitance, and minimum operating voltage. For a
given value of h, the minimum operating voltage can be
calculated as:
cuits, the DAC code should be set as close as possible
to the actual output voltage in order to minimize the
shift in switching frequency.
Adjusting V
OUT
Above 2V
V
+ V
OUT
DROP1
The feed-forward circuit that makes the on-time depen-
dent on the input voltage maintains a nearly constant
V
=
+ V
– V
DROP1
IN(MIN)
DROP2
t
h
OFF(MIN)
K
switching frequency as V+, I , and the DAC code
LOAD
1 –
are changed. This works extremely well as long as FB
is connected directly to the output. When the output is
______________________________________________________________________________________ 27
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
er transient response than the single stage, this can be
offset by the use of a voltage-positioned converter.
Q1
DH
LX
Ceramic Output Capacitor Applications
Ceramic capacitors have advantages and disadvan-
tages. They have ultra-low ESR and are noncom-
bustible, relatively small, and nonpolarized. However,
they are also expensive and brittle, and their ultra-low
ESR characteristic can result in excessively high ESR
zero frequencies. In addition, their relatively low capac-
itance value can cause output overshoot when step-
ping from full-load to no-load conditions, unless a small
inductor value is used (high switching frequency), or
there are some bulk tantalum or electrolytic capacitors
in parallel to absorb the stored inductor energy. In
some cases, there may be no room for electrolytics,
creating a need for a DC-DC design that uses nothing
but ceramics.
L1
V
OUT
R4
R5
MAX1716
MAX1854
MAX1855
Q2
DL
CS
VPS
R
SENSE
PGND
FB
The MAX1716 can take full advantage of the small size
and low ESR of ceramic output capacitors in a voltage-
positioned circuit. The addition of the positioning resis-
tor increases the ripple at FB, lowering the effective
ESR zero frequency of the ceramic output capacitor.
V
= V (1 + R4/R5)
FB
OUT
Figure 9. Adjusting V
with a Resistor-Divider
OUT
Output overshoot (V
determines the minimum out-
SOAR)
adjusted with a resistor-divider, the switching frequen-
cy is increased by the inverse of the divider ratio.
put capacitance requirement (see Output Capacitor
Selection). Often the switching frequency is increased
to 400kHz or 550kHz, and the inductor value is
reduced to minimize the energy transferred from induc-
tor to capacitor during load-step recovery. The efficien-
cy penalty for operating at 400kHz is about 2% to 3%
and about 5% at 550kHz when compared to the
300kHz voltage-positioned circuit, primarily due to the
high-side MOSFET switching losses.
This change in frequency can be compensated with the
addition of a resistor-divider to the battery-sense input
(V+). Attach a resistor-divider from the battery voltage
to V+ on the MAX1716/MAX1854/MAX1855, with the
same attenuation factor as the output divider. The V+
input has a nominal input impedance of 600kΩ, which
should be considered when selecting resistor values.
One-Stage (Battery Input) vs. Two-Stage
(5V Input) Applications
The MAX1716/MAX1854/MAX1855 can be used with a
direct battery connection (one stage) or can obtain
power from a regulated 5V supply (two stage). Each
approach has advantages, and careful consideration
should go into the selection of the final design.
Table 1 and the Typical Operating Characteristics
include a circuit using ceramic capacitors with a
550kHz switching frequency (Figure 13).
PC Board Layout Guidelines
Careful PC board layout is critical to achieve low
switching losses and clean, stable operation. The
switching power stage requires particular attention
(Figure 10). If possible, mount all of the power compo-
nents on the top side of the board with their ground ter-
minals flush against one another. Follow these
guidelines for good PC board layout:
The one-stage approach offers smaller total inductor
size and fewer capacitors overall due to the reduced
demands on the 5V supply. The transient response of
the single stage is better due to the ability to ramp the
inductor current faster. The total efficiency of a single
stage is better than the two-stage approach.
1) Keep the high-current paths short, especially at the
ground terminals. This is essential for stable, jitter-
free operation.
The two-stage approach allows flexible placement due
to smaller circuit size and reduced local power dissipa-
tion. The power supply can be placed closer to the
CPU for better regulation and lower I2R losses from PC
board traces. Although the two-stage design has slow-
2) Connect all analog grounds to a separate solid cop-
per plane, which connects to the GND pin of the
MAX1716/MAX1854/MAX1855. This includes the
28 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
VIA TO V+
VIA TO GND
BATTERY
INPUT
GND
INPUT
VIA TO CS
AND VPS
NEAR R
ALL ANALOG GROUNDS
CONNECT TO LOCAL PLANE ONLY
SENSE
C
IN
MAX1717
V
CC
GND
OUTPUT
R
SENSE
CC
Q1
REF
V
DD
D1
C
OUT
Q2
V
OUT
GND
VIA TO
SOURCE
OF Q2
L1
CONNECT LOCAL ANALOG GROUND PLANE DIRECTLY TO GND FROM
THE SIDE OPPOSITE THE V CAPACITOR GND TO AVOID V GROUND
DD
DD
CURRENTS FROM FLOWING IN THE ANALOG GROUND PLANE.
VIA TO FB
VIA TO LX
INDUCTOR DISCHARGE PATH HAS LOW DC RESISTANCE.
NOTES: "STAR" GROUND IS USED.
D1 IS DIRECTLY ACROSS Q2.
Figure 10. Power-Stage PC Board Layout Example
V
, REF, and CC capacitors, as well as the resis-
MOSFET or between the inductor and the output filter
capacitor.
CC
tive-dividers connected to FB and ILIM.
3) Keep the power traces and load connections short.
This is essential for high efficiency. The use of thick
copper PC boards (2oz vs. 1oz) can enhance full-
load efficiency by 1% or more. Correctly routing PC
board traces is a difficult task that must be
approached in terms of fractions of centimeters,
where a single mΩ of excess trace resistance caus-
es a measurable efficiency penalty.
6) Ensure the FB connection to the output is short and
direct.
7) Route high-speed switching nodes away from sensi-
tive analog areas (CC, REF, ILIM). Make all pin-strap
control input connections (SKIP, SHDN, ILIM, etc.) to
analog ground or V
rather than PGND or V
.
DD
CC
Layout Procedure
1) Place the power components first, with ground termi-
nals adjacent (low-side MOSFET source, C , C
4) CS and PGND connections for current limiting must
be made using Kelvin sense connections to guaran-
tee the current-limit accuracy.
,
OUT
IN
and D1 anode). If possible, make all these connec-
tions on the top layer with wide, copper-filled areas.
5) When trade-offs in trace lengths must be made, it’s
preferable to allow the inductor charging path to be
made longer than the discharge path. For example,
it’s better to allow some extra distance between the
input capacitors and the high-side MOSFET than to
allow distance between the inductor and the low-side
2)Mount the controller IC adjacent to the low-side
MOSFET. The DL gate trace must be short and wide,
measuring 10 to 20 squares (50mils to 100mils wide
if the MOSFET is 1 inch from the controller IC).
______________________________________________________________________________________ 29
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
+5V INPUT
BIAS SUPPLY
BATTERY (V
7V TO 24V
)
BATT
C4
1µF
R3
10Ω
C5
1µF
C
IN
Q1: IRF7811
INTERNATIONAL RECTIFIER
Q2: (2) IRF7811
INTERNATIONAL RECTIFIER
D1: CMPSH-3
CENTRAL SEMICONDUCTOR
D2: CMSH2-60
CENTRAL SEMICONDUCTOR
(4) 10µF
R4
100kΩ
D1
V
V
DD
CC
POWER-GOOD
INDICATOR
VGATE
V+
BST
DH
SHDN
ILIM
ON OFF
L1
1.3V OUTPUT
UP TO 12A
Q1
1.0µH
C3
0.1µF
R5
C1
0.22µF
300kΩ
R6
100kΩ
C
OUT
(4) 220µF
REF
CC
MAX1716
MAX1854
MAX1855
LX
DL
CS
D2
C2
47pF
Q2
R
SKIP
D0
R1
1kΩ
SENSE
3.5mΩ
D1
PGND
D2
R2
2kΩ
D3
TO V
CC
VPS
D4
FB
GND
TON
MAX1716 DAC CODE SHOWN
FLOAT (300kHz)
Figure 11. Low-Current Application (Circuit #2)
3) Group the gate-drive components (BST diode and
capacitor, V bypass capacitor) together near the
point must also be very close to the output capacitor
ground terminal.
DD
controller IC.
5)Connect the output power planes (V
and sys-
CORE
4)Make the DC-DC controller ground connections as
shown in Figure 1. This diagram can be viewed as
having three separate ground planes: output ground,
where all the high-power components go; the GND
tem ground planes) directly to the output filter
capacitor positive and negative terminals with multi-
ple vias. Place the entire DC-DC converter circuit as
close to the CPU as is practical.
plane, where the GND pin and V
bypass capaci-
DD
___________________Chip Information
TRANSISTOR COUNT: 3729
tors go; and an analog ground plane where sensitive
analog components go. The analog ground plane
and GND plane must meet only at a single point
directly beneath the IC. These two planes are then
connected to the high-power output ground with a
short connection from GND to the source of the low-
side MOSFET (the middle of the star ground). This
30 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
+5V INPUT
BIAS SUPPLY
BATTERY (V
7V TO 24V
)
BATT
C4
1µF
R3
10Ω
C5
1µF
C
IN
Q1: IRF7811
INTERNATIONAL RECTIFIER
Q2: (2) IRF7811
INTERNATIONAL RECTIFIER
D1: CMPSH-3
CENTRAL SEMICONDUCTOR
D2: CMSH2-60
CENTRAL SEMICONDUCTOR
(4) 10µF
R4
100kΩ
D1
V
V
DD
CC
POWER-GOOD
INDICATOR
VGATE
V+
BST
DH
SHDN
ILIM
ON OFF
L1
1.0V OUTPUT
UP TO 12A
Q1
0.68µH
C3
0.1µF
R5
C1
0.22µF
300kΩ
R6
100kΩ
C
OUT
REF
CC
MAX1716
MAX1854
MAX1855
(4) 220µF
LX
DL
CS
D2
C2
47pF
Q2
R
SKIP
D0
R1
1kΩ
SENSE
3.5mΩ
D1
PGND
D2
R2
2kΩ
D3
TO V
CC
VPS
D4
FB
GND
TON
MAX1716 DAC CODE SHOWN
REF (400kHz)
Figure 12. Low-Voltage Application (Circuit #3)
______________________________________________________________________________________ 31
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
+5V INPUT
BIAS SUPPLY
BATTERY (V
7V TO 24V
)
BATT
C4
1µF
R3
10Ω
C5
1µF
C
IN
Q1: (2) IRF7811
INTERNATIONAL RECTIFIER
Q2: (2) IRF7811
INTERNATIONAL RECTIFIER
D1: CMPSH-3
CENTRAL SEMICONDUCTOR
D2: CMSH2-60
CENTRAL SEMICONDUCTOR
(5) 10µF
R4
100kΩ
D1
V
V
DD
CC
POWER-GOOD
INDICATOR
VGATE
V+
BST
DH
SHDN
ILIM
ON OFF
L1
1.6V OUTPUT
UP TO 18A
Q1
0.47µH
C3
0.1µF
R5
C1
0.22µF
200kΩ
R6
100kΩ
C
OUT
REF
CC
MAX1716
MAX1854
MAX1855
(8) 47µF
LX
DL
CS
D2
C2
47pF
Q2
R
SKIP
D0
R1
1kΩ
SENSE
3mΩ
D1
PGND
D2
R2
1kΩ
D3
TO V
CC
VPS
D4
FB
GND
TON
MAX1716 DAC CODE SHOWN
GND (550kHz)
Figure 13. All-Ceramic-Capacitor Application (Circuit #4)
Pin Configuration
TOP VIEW
DH
V+
1
2
3
4
5
6
7
8
9
24 CS
23 LX
SHDN
FB
22 BST
21 SKIP
MAX1716
MAX1854
MAX1855
CC
20 D0
19 D1
18 D2
17 D3
16 D4
ILIM
V
CC
TON
REF
GND 10
VPS 11
15 V
DD
14 PGND
13 DL
VGATE 12
QSOP
32 ______________________________________________________________________________________
High-Speed, Adjustable, Synchronous Step-Down
Controllers with Integrated Voltage Positioning
Package Information
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
33 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2000 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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