UT2200-50_15 [MARKTECH]
LED;
MARKTECH CORPORATE 
Cree® UltraThinII™ LED
Data Sheet
CxxxUT2200-Sxxxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications. Applications
include keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
APPLICATIONS
•
•
Small Chip – 200 x 200 x 50 μm
UT LED Performance
•
•
•
•
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
–
–
–
2.5mW min. (520-535 nm) Green
5.5 mW min. (455–475 nm) Blue
8.0 mW min. (455-475 nm) Blue
•
•
Low Forward Voltage
2.9 V Typical at 5 mA
Single Wire Bond Structure
–
CxxxUT2200-Sxxxxx Chip Diagram
Top View
Bottom View
Die Cross Section
SiC Substrate
Bottom Surface
150 x 150 μm2
G•SiC LED Chip
200 x 200 μm
InGaN
Anode (+)
Mesa (junction)
150 x 150 μm
SiC Substrate
h = 50 μm
Cathode (-)
Gold Bond Pad
90 μm Diameter
Backside
Metallization
80 x 80 μm
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxUT2200-Sxxxxx
30 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +100°C
-40°C to +100°C
500 V
Note 2
Electrostatic Discharge Threshold (HBM)
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5 mA
Reverse Current
[I(Vr=5 V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
2.9
Max.
Max.
Typ.
21
C460UT2200-Sxxxxx
C470UT2200-Sxxxxx
C527UT2200-Sxxxxx
2.7
2.7
2.7
3.1
3.1
3.2
2
2
2
2.9
22
3.0
35
Mechanical Specifications
Description
CxxxUT2200-Sxxxxx
Dimension
Tolerance
± 25
P-N Junction Area (μm)
Top Area (μm)
150 x 150
200 x 200
150 x 150
50
± 25
Bottom Area (Substrate) (μm)
Chip Thickness (μm)
± 25
± 10
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
90
-5, +15
± 0.5
± 25
1.2
80 x 80
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the ESD ratings shown.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
4. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
Cree, Inc.
4600 Silicon Drive
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3DP Rev. A
Standard Bins for CxxxUT2200-Sxxxxx
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from only
one bin. Sorted die kit (CxxxUT2200-Sxxxxx) orders may be filled with any or all bins (CxxxUT2200-xxxxx) contained
in the kit. All radiant flux values are measured at IF = 20 mA and all dominant wavelength values are measured at IF =
5 mA.
UT2-5.5
C460UT2200-S0550
8.0 mW
C460UT2200-0201
C460UT2200-0202
C460UT2200-0203
C460UT2200-0204
5.5 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C470UT2200-S0550
8.0 mW
5.5 mW
C470UT2200-0201
C470UT2200-0202
C470UT2200-0203
C470UT2200-0204
475 nm
465 nm
467.5 nm
470 nm
472.5 nm
Dominant Wavelength
UT2-8.0
C460UT2200-S0800
C460UT2200-0205
C460UT2200-0206
C460UT2200-0207
C460UT2200-0208
8.0 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C470UT2200-S0800
C470UT2200-0205
C470UT2200-0206
C470UT2200-0207
C470UT2200-0208
8.0 mW
465 nm
475 nm
467.5 nm
470 nm
472.5 nm
Dominant Wavelength
UT2-2.5
C527UT2200-S02500
C527UT2200-0201
C527UT2200-0202
C527UT2200-0203
2.5 mW
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3DP Rev. A
Characteristic Curves
These are representative measurements for the UT2200 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Forward Current vs. Forward Voltage
Dominant Wavelength Shift vs. Forward Current
30
25
20
15
10
5
8.0
6.0
4.0
Blue
Green
2.0
0.0
-2.0
-4.0
-6.0
-8.0
-10.0
-12.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
5
10
15
20
25
30
Vf (V)
If (mA)
Relative Intensity vs. Peak Wavelength
Relative Intensity vs. Forward Current
450
400
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
Blue
Green
0
360 380 400 420 440 460 480 500 520 540 560 580 600 620 640
0
5
10
15
20
25
30
If (mA)
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
4
CPR3DP Rev. A
Radiation Pattern
This is a representative radiation pattern for the UltraThin Chip LED product. Actual patterns will vary slightly for each
chip.
Cree, Inc.
4600 Silicon Drive
Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the
Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3DP Rev. A
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