UT2274L-T92-K [UTC]
SWITCHING REGULATOR APPLICATIONS; 开关稳压器的应用
| 型号： | UT2274L-T92-K |
| 厂家： | 
Unisonic Technologies |
| 描述： | SWITCHING REGULATOR APPLICATIONS |
| 文件： | 总3页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
UT2274
Preliminary
NPN SILICON TRANSISTOR
SWITCHING REGULATOR
APPLICATIONS
FEATURES
* High breakdown voltage (VCBO≥1400V).
* Ultra high-speed switching.
* Wide SOA.
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
B
B
B
2
C
C
C
3
E
E
E
UT2274L-T92-B
UT2274L-T92-K
UT2274L-TM3-T
UT2274G-T92-B
UT2274G-T92-K
UT2274G-TM3-T
TO-92
TO-92
TO-251
Tape Box
Bulk
Tube
www.unisonic.com.tw
1 of 3
Copyright © 2011 Unisonic Technologies Co., Ltd
QW-R213-019.d
UT2274
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER SYMBOL
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
1400
720
V
5
V
DC
1
A
Collector Current
Pulse (Note 2)
TO-251
TO-92
ICP
2
1
A
W
Collector Dissipation
PC
625
mW
°C
°C
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. PW≤300μs, duty cycle≤10%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC=1 mA, IE =0A
MIN TYP MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
1400
720
5
V
V
IC=5 mA, RBE =∞
IE =1 mA, IC =0A
V
VCB=800 V, IE =0A
VCB=1400 V, RBE =0Ω
VEB=4V, IC =0A
10
1
μA
mA
mA
V
Collector Cut-off Current
ICES
Emitter Cut-off Current
IEBO
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(SAT)
VBE(SAT)
hFE1
IC=0.25 A, IB=0.05 A
IC=0.5 A, IB=0.1 A
VCE =5V, IC=0.1 A
VCE =5V, IC=0.5 A
VCC=200V, RL=400Ω
IC=0.5A,IB1=0.1A,IB2=-0.25A,
1.5
1.5
35
V
15
4
DC Current Gain
hFE2
Storage Time
Fall Time
tSTG
tF
1.5
3.0
μs
μs
0.25 0.4
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R213-019.d
www.unisonic.com.tw
UT2274
Preliminary
NPN SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT
IB1
PW =20μs
D.C. ≤1%
Output
IB2
RB
Input
RL
VR
50Ω
+
+
470μF
100μF
VBE=-5V
VCC=200V
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R213-019.d
www.unisonic.com.tw
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