C505RT230-0206 [MARKTECH]
RazerThin LEDs; RazerThin LED灯
| 型号： | C505RT230-0206 |
| 厂家： | 
MARKTECH CORPORATE |
| 描述： | RazerThin LEDs |
| 文件： | 总4页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
RazerThin LEDs
CxxxRT230-S0200
Cree’s RazerThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s RT series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
FEATURES
APPLICATIONS
•
•
Small Chip - 200 x 200 x 85 μm
Low Forward Voltage
•
Mobile Phone Key Pads
Blue LEDs
–
–
3.1 V Typical at 20 mA - Blue & Traffic Green
3.2 V Typical at 20 mA Green
White LEDs
•
•
•
Audio Product Display Lighting
Mobile Appliance Keypads
•
RT230™ LED Performance
–
–
2.0 mW min. Blue
1.5 mW min. Green
Automobile Dashboard Lighting
•
•
Single Wire Bond Structure
Class 2 ESD Rating
CxxxRT230-S0200 Chip Diagram
Top View
Bottom View
Side View
G•SiC® LED Chip
200 x 200 μm
InGaN
Anode (+)
Mesa (junction)
176 x 176 μm
SiC Substrate
h = 85 μm
Gold Bond Pad
105 μm Diameter
Cathode (-)
Backside
Metallization
80 x 80 μm
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxRT230-S0200
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Note 2
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.1
3.1
3.1
3.2
Max.
Max.
Typ.
21
C460RT230-S0200
C470RT230-S0200
C505RT230-S0200
C527RT230-S0200
2.7
2.7
2.7
2.7
3.7
3.7
3.7
3.7
2
2
2
2
22
30
35
Mechanical Specifications
Description
CxxxRT230-S0200
Dimension
Tolerance
± 25
P-N Junction Area (μm)
Top Area (μm)
176 x 176
200 x 200
200 x 200
85
± 25
Bottom Area (μm)
± 25
Chip Thickness (μm)
± 10
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
105
-5, +15
± 0.5
± 25
1.2
80 x 80
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
4. Caution: To obtain optimum output efficiency, the amount of epoxy used should be characterized based upon the specific
application.
5. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3CO Rev. A
Standard Bins for CxxxRT230-S0200
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxRT230-S0200) orders may be filled with any or all bins (CxxxRT230-0xxx) contained
in the kit. All radiant flux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
20 mA.
C460RT230-S0200
6.0 mW
C460RT230-0203
C460RT230-0201
C460RT230-0204
C460RT230-0202
4.0 mW
2.0 mW
455 nm
460 nm
465 nm
Dominant Wavelength
C470RT230-S0200
6.0 mW
4.0 mW
2.0 mW
C470RT230-0203
C470RT230-0204
C470RT230-0201
C470RT230-0202
465 nm
470 nm
475 nm
Dominant Wavelength
C505RT230-S0200
6.0 mW
4.0 mW
2.5 mW
1.5 mW
C505RT230-0205
C505RT230-0206
C505RT230-0203
C505RT230-0201
C505RT230-0204
C505RT230-0202
500 nm
505 nm
510 nm
Dominant Wavelength
C527RT230-S0200
4.0 mW
2.5 mW
1.5 mW
C527RT230-0204
C527RT230-0201
C527RT230-0205
C527RT230-0206
C527RT230-0203
C527RT230-0202
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
3
CPR3CO Rev. A
Characteristic Curves
These are representative measurements for the RT230 product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
20.0
16.0
12.0
8.0
30
25
20
15
10
5
527nm
505nm
470nm
4.0
0.0
-4.0
0
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
If (mA)
Vf (V)
Relative Intensity vs. Peak Wavelength
Relative Intensity vs Forward Voltage
140
120
100
80
100
80
60
40
20
0
460 nm
505 nm
527 nm
60
40
20
0
350
400
450
500
550
600
650
0
5
10
15
20
25
30
Wavelength (nm)
If (mA)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
4
CPR3CO Rev. A
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