C505RT290-S0100 [CREE]
Reduced Forward Voltage 2.9 V Typical at 5 mA;
| 型号： | C505RT290-S0100 |
| 厂家： | 
CREE, INC |
| 描述： | Reduced Forward Voltage 2.9 V Typical at 5 mA |
| 文件： | 总4页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Cree® RazerThin® RT290TM LEDs
CxxxRT290-S0100
Data Sheet
Cree’sꢀRazerThinꢀLEDsꢀareꢀaꢀnewꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀ
withꢀCree’sꢀproprietaryꢀG•SiC®ꢀsubstrateꢀtoꢀdeliverꢀsuperiorꢀprice/performanceꢀforꢀhigh-intensityꢀblueꢀandꢀgreenꢀ
LEDs.ꢀ Theseꢀ verticallyꢀ structuredꢀ LEDꢀ chipsꢀ areꢀ approximatelyꢀ 95ꢀ micronsꢀ inꢀ heightꢀ andꢀ requireꢀ aꢀ lowꢀ forwardꢀ
voltage.ꢀCree’sꢀRazerThinꢀseriesꢀchipsꢀhaveꢀtheꢀabilityꢀtoꢀwithstandꢀ1000-VꢀESD.ꢀApplicationsꢀforꢀRazerThinꢀLEDsꢀ
includeꢀnext-generationꢀkeypadꢀbacklightingꢀwhereꢀsub-miniaturizationꢀandꢀthinnerꢀformꢀfactorsꢀareꢀrequired.
FEATURES
APPLICATIONS
•ꢀ Thinꢀ95-μmꢀChip
•ꢀ MobileꢀPhoneꢀKeyꢀPads
–ꢀ WhiteꢀLEDs
•ꢀ ReducedꢀForwardꢀVoltage
–ꢀ 2.9ꢀVꢀTypicalꢀatꢀ5ꢀmA
•ꢀ RazerThinꢀLEDꢀPerformance
–ꢀ 460ꢀnmꢀ-ꢀ3.8–11.1ꢀmW
–ꢀ 470ꢀnmꢀ-ꢀ3.4–10.4ꢀmW
–ꢀ 505ꢀnmꢀ-ꢀ2.0–6.5ꢀmW
–ꢀ 527ꢀnmꢀ-ꢀ1.7–6.0ꢀmW
–ꢀ BlueꢀLEDs
–ꢀ GreenꢀLEDs
•ꢀ CellularꢀPhoneꢀLCDꢀBacklighting
•ꢀ DigitalꢀCameraꢀFlashꢀforꢀMobileꢀAppliance
•ꢀ AutomotiveꢀDashboardꢀLighting
•ꢀ LEDꢀVideoꢀDisplays
•ꢀ SingleꢀWireꢀBondꢀStructure
•ꢀ Class-2ꢀESDꢀRating
•ꢀ AudioꢀProductꢀDisplayꢀLighting
CxxxRT290-S0100 Chip Diagram
ꢀ
Top View
Bottom View
Die Cross Section
G•SiCꢀLEDꢀChip
270ꢀxꢀ270ꢀμm
InGaN
Anodeꢀ(+)
Mesaꢀ(junction)
246ꢀxꢀ246ꢀμm
SiCꢀSubstrate
hꢀ=ꢀ95ꢀμm
Backside
Metallization
GoldꢀBondꢀPad
110ꢀμmꢀDiameter
Cathodeꢀ(-)
Subject to change without notice.
www.cree.com
1
Maximum Ratings at TA = 25°CNotes 1&3
DCꢀForwardꢀCurrent
CxxxRT290-S0100
30ꢀmA
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1kHz)
LEDꢀJunctionꢀTemperature
100ꢀmA
125°C
ReverseꢀVoltage
5ꢀV
OperatingꢀTemperatureꢀRange
-40°Cꢀtoꢀ+100°C
-40°Cꢀtoꢀ+100°C
1000ꢀV
StorageꢀTemperatureꢀRange
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)Noteꢀ2
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)Noteꢀ2
Classꢀ2ꢀ
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 5mA
Part Number
Reverse Current
[I(Vr=5V), μA]
Forward Voltage (Vf, V)
Min.
Typ.
2.9
2.9
2.9
2.9
Max.
Max.
C460RT290-S0100
C470RT290-S0100
C505RT290-S0100
C527RT290-S0100
2.7
2.7
2.6
2.6
3.1
3.1
3.2
3.2
1
1
1
1
Mechanical Specifications
Description
CxxxRT290-S0100
Dimension
Tolerance
P-NꢀJunctionꢀAreaꢀ(μm)
TopꢀAreaꢀ(μm)
246ꢀxꢀ246
270ꢀxꢀ270
270ꢀxꢀ270
95
±ꢀ25
±ꢀ25
±ꢀ25
±ꢀ15
±ꢀ20
±ꢀ0.5
±ꢀ10
BottomꢀAreaꢀ(μm)
ChipꢀThicknessꢀ(μm)
AuꢀBondꢀPadꢀDiameterꢀ(μm)
AuꢀBondꢀPadꢀThicknessꢀ(μm)
BackꢀContactꢀMetalꢀWidthꢀ(μm)
110
1.2
20
Notes:
1.ꢀ Maximumꢀratingsꢀareꢀpackageꢀdependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀaꢀT-1ꢀ3/4ꢀpackageꢀ(withꢀHysolꢀOS4000ꢀepoxy)ꢀ
forꢀcharacterization.ꢀSellerꢀmakesꢀnoꢀrepresentationsꢀregardingꢀratingsꢀforꢀpackagesꢀotherꢀthanꢀtheꢀT-1ꢀ3/4ꢀpackageꢀusedꢀbyꢀSeller.ꢀ
Theꢀforwardꢀcurrentsꢀ(DCꢀandꢀPeak)ꢀareꢀnotꢀlimitedꢀbyꢀtheꢀG•SiCꢀdieꢀbutꢀbyꢀtheꢀeffectꢀofꢀtheꢀLEDꢀjunctionꢀtemperatureꢀonꢀtheꢀ
package.ꢀTheꢀjunctionꢀtemperatureꢀlimitꢀofꢀ125°CꢀisꢀaꢀlimitꢀofꢀtheꢀT-1ꢀ3/4ꢀpackage;ꢀjunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀ
inꢀaꢀspecificꢀpackageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀenergyꢀtestꢀ(RAET).ꢀ
TheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.ꢀSellerꢀgivesꢀnoꢀotherꢀassurancesꢀregardingꢀ
theꢀabilityꢀofꢀProductsꢀtoꢀwithstandꢀESD.
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ
andꢀoperatedꢀatꢀ5ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀareꢀ
theꢀaverageꢀvaluesꢀexpectedꢀbyꢀSellerꢀinꢀlargeꢀquantitiesꢀandꢀareꢀprovidedꢀforꢀinformationꢀonly.ꢀSellerꢀgivesꢀnoꢀassurancesꢀproductsꢀ
shippedꢀ willꢀ exhibitꢀ suchꢀ typicalꢀ ratings.ꢀ Allꢀ measurementsꢀwereꢀ madeꢀ usingꢀ lampsꢀ inꢀ T-1ꢀ 3/4ꢀ packagesꢀ (withꢀ Hysolꢀ OS4000ꢀ
epoxy).ꢀDominantꢀwavelengthꢀmeasurementsꢀtakenꢀusingꢀIlluminanceꢀE.
4.ꢀ Forꢀreferenceꢀonly,ꢀtypicalꢀVfꢀforꢀC460,ꢀC470,ꢀandꢀC527ꢀisꢀ3.2ꢀVꢀandꢀatꢀ20ꢀmA.
Cree, Inc.
4600 Silicon Drive
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
2
CPR3BU Rev. E
Standard Bins for RT290
AllꢀLEDꢀchipsꢀareꢀsortedꢀontoꢀdieꢀsheetsꢀaccordingꢀtoꢀtheꢀbinsꢀshownꢀbelow.ꢀAllꢀradiantꢀfluxꢀvaluesꢀshownꢀandꢀspecifiedꢀ
areꢀatꢀIfꢀ=ꢀ20ꢀmAꢀ(seeꢀNoteꢀ1)ꢀandꢀallꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ5ꢀmAꢀ(seeꢀNoteꢀ
2).
C460RT290-S0100
11.1ꢀmW
C460RT290-0105
C460RT290-0101
C460RT290-0106
C460RT290-0102
C460RT290-0107
C460RT290-0103
C460RT290-0108
C460RT290-0104
7.2ꢀmW
3.8ꢀmW
455ꢀnm
457.5ꢀnm
460ꢀnm
462.5ꢀnm
465ꢀnm
Dominant Wavelength
C470RT290-S0100
10.4ꢀmW
6.7ꢀmW
3.4ꢀmW
C470RT290-0105
C470RT290-0101
C470RT290-0106
C470RT290-0107
C470RT290-0103
C470RT290-0108
C470RT290-0104
C470RT290-0102
465ꢀnm
467.5ꢀnm
470ꢀnm
472.5ꢀnm
475ꢀnm
Dominant Wavelength
C505RT290-S0100
6.5ꢀmW
C505RT290-0103
C505RT290-0104
4.0ꢀmW
C505RT290-0101
C505RT290-0102
2.0ꢀmW
500ꢀnm
505ꢀnm
510ꢀnm
Dominant Wavelength
C527RT290-S0100
6.0ꢀmW
C527RT290-0104
C527RT290-0101
C527RT290-0105
C527RT290-0106
C527RT290-0103
3.5ꢀmW
C527RT290-0102
1.7ꢀmW
520ꢀnm
525ꢀnm
530ꢀnm
535ꢀnm
Dominant Wavelength
Notes:
1.ꢀ Forꢀreferenceꢀonly,ꢀradiantꢀfluxꢀvaluesꢀatꢀIfꢀ=ꢀ5ꢀmAꢀareꢀtypicallyꢀ29%ꢀandꢀ32%ꢀofꢀtheꢀcorrespondingꢀradiantꢀfluxꢀatꢀIfꢀ=ꢀ20ꢀmAꢀforꢀ
455-475ꢀnmꢀrangeꢀandꢀ520-535ꢀnmꢀrange,ꢀrespectively.
2.ꢀ Forꢀreferenceꢀonly,ꢀwavelengthꢀvaluesꢀatꢀIfꢀ=ꢀ20ꢀmAꢀareꢀtypicallyꢀ2ꢀnmꢀlessꢀandꢀ7ꢀnmꢀlessꢀthanꢀtheꢀcorrespondingꢀwavelengthꢀ
valuesꢀatꢀIfꢀ=ꢀ5ꢀmAꢀforꢀ455-475ꢀnmꢀrangeꢀandꢀ520-535ꢀnmꢀrange,ꢀrespectively.
3.ꢀ Sortedꢀdieꢀditsꢀmayꢀcontainꢀanyꢀorꢀallꢀofꢀtheꢀbinsꢀshownꢀabove,ꢀrespectively.ꢀ
Cree, Inc.
4600 Silicon Drive
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Fax: +1-919-313-5870
www.cree.com/chips
3
CPR3BU Rev. E
Characteristic Curves
Theseꢀ areꢀ representativeꢀ measurementsꢀforꢀ theꢀ RazerThinꢀ products.ꢀ Actualꢀ curvesꢀ willꢀ varyꢀ slightlyꢀ forꢀ theꢀ variousꢀ
radiantꢀfluxꢀandꢀdominantꢀwavelengthꢀbins.
Wavelength Shift vs Forward Current
Forward Current vs Forward Voltage
10.00
8.00
30
25
20
15
10
5
6.00
4.00
2.00
0.00
-2.00
-4.00
-6.00
-8.00
-10.00
-12.00
527nm
470nm
0
0
5
10
15
20
25
30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
If (mA)
Volts
Relative Intensity vs Wavelength - All Products
Relative Intensity vs Forward Current
100%
80%
60%
40%
20%
0%
140
120
100
80
60
470 nm
527 nm
40
20
0
0
5
10
15
20
25
30
500
If (mA)
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1-919-313-5300
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.
Fax: +1-919-313-5870
www.cree.com/chips
4
CPR3BU Rev. E
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