C505XB900-0202-A [CREE]
Optoelectronic Device;
| 型号： | C505XB900-0202-A |
| 厂家： | 
CREE, INC |
| 描述： | Optoelectronic Device |
| 文件： | 总4页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
XBright Power Chip LED
CxxxXB900-Sx000-A
Cree’s XB™ power chip series of LEDs are the next generation of solid-state LED emitters that combine highly efficient
InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity
LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and
require only a single wire bond connection. These LEDs are useful in a broad range of applications such as outdoor
full-motion LED video signs, automotive lighting and white LEDs. Cree’s XB power chips are compatible with optical
power packages that employ proper thermal management.
FEATURES
APPLICATIONS
•
•
•
XBright LED Technology
•
General Illumination
Larger “Power Chip” Design
High Performance
–
–
–
–
–
Automobile
Aircraft
–
–
–
90 mW min. (460 & 470 nm) Blue
60 mW min. (505 nm) Traffic Green
40 mW min. (527 nm) Green
Decorative Lighting
Task Lighting
Outdoor Illumination
•
•
Single Wire Bond Structure
AuSn Backside Metalization
•
•
•
White LEDs
Backlighting
Traffic Signals
CxxxXB900-Sx000-A Chip Diagram
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
900 x 900 μm
764 μm
Contact Metal
Cathode (-)
Width = 30 μm
SiC Substrate
h = 250 μm
Bond Pad
120 μm Diameter
InGaN
Anode (+)
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = ꢁ5°CNote ꢀ
DC Forward Current
CxxxXB900-Sx000-A
Note 2
500 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
700 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
Storage Temperature Range
-40°C to +85°C
-40°C to +100°C
Note ꢁ
Typical Electrical/Optical Characteristics at TA = ꢁ5°C, If = 350mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.4
3.4
3.4
3.4
Max.
Max.
10
Typ.
21
C460XB900-S9000-A
C470XB900-S9000-A
C505XB900-S6000-A
C527XB900-S4000-A
3.0
3.0
3.0
3.0
3.9
3.9
3.9
3.9
10
22
10
30
10
35
Mechanical Specifications
Description
CxxxXB900-Sx000-A
Dimension
Tolerance
± 25
P-N Junction Area (μm)
Top Area (μm)
848 x 848
725 x 725
900 x 900
250
± 25
Bottom Area (μm)
± 50
Chip Thickness (μm)
± 25
Top Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm)
120
± 10
1.2
± 0.5
± 25
764 x 764
1.7
± 0.3
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant
for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package
to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).
2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are
within the range of average expected by manufacturer in large quantities and are provided for information only. All measurements
were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using
Illuminance E.
3. Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C.
4. Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip.
5. XB900 chips are shipped with the junction side up, requiring die transfer prior to die attach.
6. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
ꢁ
CPR3CM Rev. D
Standard Bins for CxxxXB900-Sx000-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die
from only one bin. Sorted die kit (CxxxXB900-Sx000-A) orders may be filled with any or all bins (CxxxXB290-02xx-A)
contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 350 mA. Radiant
flux values are measured using Au-plated TO39 headers without an encapsulant.
C460XB900-S9000-A
C460XB900-0213-A
C460XB900-0209-A
C460XB900-0205-A
C460XB900-0201-A
C460XB900-0214-A
C460XB900-0210-A
C460XB900-0206-A
C460XB900-0202-A
C460XB900-0215-A
C460XB900-0211-A
C460XB900-0207-A
C460XB900-0203-A
C460XB900-0216-A
C460XB900-0212-A
C460XB900-0208-A
C460XB900-0204-A
165 mW
140 mW
115 mW
90 mW
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
C470XB900-S9000-A
C470XB900-0209-A
C470XB900-0205-A
C470XB900-0201-A
C470XB900-0210-A
C470XB900-0211-A
C470XB900-0207-A
C470XB900-0203-A
C470XB900-0212-A
C470XB900-0208-A
C470XB900-0204-A
140 mW
115 mW
90 mW
C470XB900-0206-A
C470XB900-0202-A
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
C505XB900-S6000-A
C505XB900-0203-A
C505XB900-0204-A
85 mW
60 mW
C505XB900-0201-A
C505XB900-0202-A
500 nm
505 nm
510 nm
Dominant Wavelength
C5ꢁ7XB900-S4000-A
C527XB900-0207-A
C527XB900-0204-A
C527XB900-0201-A
C527XB900-0208-A
C527XB900-0209-A
C527XB900-0206-A
C527XB900-0203-A
75 mW
55 mW
40 mW
C527XB900-0205-A
C527XB900-0202-A
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3CM Rev. D
Characteristic Curves, TA = 25˚C
Typical Junction Temp. Curves, If = 350 mA
Relative Light Intensity
Forward Current vs Forward Voltage
100%
400
350
300
250
200
150
100
50
90%
80%
70%
60%
50%
40%
30%
470nm
20%
10%
0%
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
25
50
75
100
125
Vf (V)
Junction Temperature (C)
Wavelength Shift
Relative Intensity vs Forward Current
6.0
5.0
4.0
3.0
2.0
1.0
0.0
140
120
100
80
%
60
470nm
40
20
0
0
50
100
150
200
250
300
350
400
0
25
50
75
100
125
If (mA)
Junction Temperature (C)
Voltage Shift
Dominant Wavelength Shift vs Forward Current
0.0
10
8
-0.1
-0.2
-0.3
-0.4
6
4
2
0
470nm
527nm
470nm
-2
0
50
100
150
200
250
300
350
400
0
25
50
75
100
125
If (mA)
Junction Temperature (C)
Cree, Inc.
4600 Silicon Drive
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and XBright are registered trademarks, and XB is a trademark of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3CM Rev. D
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