MM1-1044H [MARKIMICROWAVE]
GaAs MMIC Double Balanced Mixer;型号: | MM1-1044H |
厂家: | Marki |
描述: | GaAs MMIC Double Balanced Mixer |
文件: | 总14页 (文件大小:1000K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GaAs MMIC Double Balanced Mixer
1. Device Overview
MM1-1044H
Die
1.1 General Description
MM1-1044H is a GaAs MMIC double balanced mixer that is
designed for and operates at the K and Ka band 5G
frequencies. MM1-1044H is a high linearity Ka band mixer
that works well as both an up and down converter. This mixer
offers low conversion loss and high LO to RF isolations over a
broadband Ku to Ka band. The sister MM1-1044L is
recommended for low power applications. The MM1-1044H is
available as both wire bondable die and as connectorized modules.
For a list of recommended LO driver amps for all mixers and IQ
mixers, see here.
Module
1.2 Features
▪ Low cost Ka band mixer
▪ Small 0.77mm x 1.17mm form
factor
▪ 5G band coverage
1.3 Applications
▪ Mobile test and measurement
equipment
▪ 5G transceivers
1.4 Functional Block Diagram
1.5 Part Ordering Options1
Part
Product
Lifecycle
Export
Classification
Description
Number
Package Green Status
MM1-1044HCH-2
MM1-1044HS
Wire bondable die
CH
Active
EAR99
EAR99
EAR99
Connectorized
module; 2.4 mm
connectors
Connectorized
module; 2.92 mm
connectors
S
S
Active
Active
RoHS
MM1-1044HS-
KKS2
1
2
Refer to our website for a list of definitions for terminology presented in this table.
Operation only guaranteed up to 40GHz for models with 2.92mm connectors.
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MM1-1044H
3.5 Electrical Specifications .................. 5
3.6 Typical Performance Plots ............... 6
3.6.1 Typical Performance Plots: IP3 .. 8
Table of Contents
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
2. Port Configurations and Functions ...... 3
2.1 Port Diagram................................. 3
2.2 Port Functions............................... 3
3. Specifications ................................... 4
3.1 Absolute Maximum Ratings.............. 4
3.2 Package Information ....................... 4
3.3 Recommended Operating Conditions . 4
3.4 Sequencing Requirements ............... 4
3.6.2 Typical Performance Plots: LO
Harmonic Isolation............................. 9
3.6.3 Typical Spurious Performance:
Down-Conversion............................ 10
3.6.4 Typical Spurious Performance: Up-
Conversion..................................... 10
4. Die Mounting Recommendations ....... 11
4.1 Mounting and Bonding
Recommendations .............................. 11
4.2 Handling Precautions .................... 11
4.3 Bonding Diagram.......................... 12
5. Mechanical Data............................. 13
5.1 CH Package Outline Drawing ......... 13
5.2 S Package Outline Drawing............ 13
Revision History
Revision Code
Comment
Revision Date
February 2018
June 2018
February 2020
March 2020
-
Datasheet Initial Release
Update to CH Package Outline
Correction to Spur Chart
Power Handling Updated
A
B
C
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MM1-1044H
2. Port Configurations and Functions
2.1 Port Diagram
A top-down view of the MM1-1044H’s CH package outline drawing is shown below. The
MM1-1044H has the input and output ports given in Port Functions. The MM1-1044H
can be used in either an up or down conversion. For configuration A, input the LO into
port 1, use port 3 for the RF, and port 2 for the IF. For configuration B, input the LO
into port 3, use port 1 for the RF, and port 2 for the IF.
2.2 Port Functions
Equivalent Circuit
Port
Function
Description
for Package
LO
(Configuration A)
RF
Port 1 is DC short for the CH and S
packages.
Port 1
(Configuration B)
Port 2 is diode connected for the CH
and S package.
Port 2
Port 3
IF
RF
(Configuration A)
LO
Port 3 is DC open for the CH and S
packages.
(Configuration B)
CH package ground path is provided
through the substrate and ground bond
pads. S package ground provided
through metal housing and outer coax
conductor.
GND
Ground
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MM1-1044H
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may be inoperable or have a reduced
lifetime.
Parameter
Maximum Rating
Units
Port 1 DC Current
Port 2 DC Current
TBD
TBD
mA
mA
dBm
°C
Power Handling, at any Port
Operating Temperature
Storage Temperature
+30
-55 to +100
-65 to +125
ºC
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
S Package
TBD
12 g
Weight
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Min Nominal Max Units
TA, Ambient Temperature
LO Input Power
-55
+25
+100
+20
°C
+11
dBm
3.4 Sequencing Requirements
There is no requirement to apply power to the ports in a specific order. However, it is
recommended to provide a 50Ω termination to each port before applying power. This is a
passive diode mixer that requires no DC bias.
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MM1-1044H
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system. Typical data shown is
for the connectorized S package mixer used in the forward direction with a +15 dBm sine
wave input. Specifications shown for configuration A (B).
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. All bare die are 100% DC tested and visually
inspected. RF testing of our die is performed on a sample basis to verify conformance to datasheet guaranteed specifications.
Parameter
Test Conditions
Min Typical
Max
Units
RF (Port 3) Frequency Range
10
44
LO (Port 1) Frequency Range
I (Port 2) Frequency Range
10
0
44
14
GHz
RF/LO = 9 - 44 GHz
I = DC - 4 GHz
RF/LO = 9 - 44 GHz
I = 4 - 14 GHz
RF/LO = 9 - 44 GHz
I = DC - 0.2 GHz
7.6
(8.6)
9.5
13.5
(14.5)
Conversion Loss (CL)3
dB
dB
(10)
Noise Figure (NF)4
LO to RF
7.6
RF/LO = 9 - 44 GHz
IF/LO = 9 - 44 GHz
RF/IF = 9 - 44 GHz
47
49
39
Isolation
LO to IF
RF to IF
dB
RF/LO = 9 - 44 GHz
I = DC - 0.2 GHz
+21.6
(+21.8)
+11
Input IP3 (IIP3)
dBm
dBm
Input 1 dB Gain Compression
Point (P1dB)
(+10)
3
4
Measured as a down converter to a fixed 91MHz IF.
Mixer Noise Figure typically measures within 0.5 dB of conversion loss for IF frequencies greater
than 5 MHz.
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MM1-1044H
3.6 Typical Performance Plots
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MM1-1044H
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3.6.1 Typical Performance Plots: IP3
MM1-1044H
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MM1-1044H
3.6.2 Typical Performance Plots: LO Harmonic Isolation
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3.6.3 Typical Spurious Performance: Down-Conversion
MM1-1044H
Typical spurious data is provided by selecting RF and LO frequencies (± m*LO ± n*RF) within the
RF/LO bands, to create a spurious output within the IF band. The mixer is swept across the full
spurious band and the mean is calculated. The numbers shown in the table below are for a -10
dBm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where “n” is
the RF spur order. For example, the 2RF x 2LO spur is 70 dBc for a -10 dBm input, so a -20
dBm RF input creates a spur that is (2-1) x (-10 dB) lower, or 80 dBc. Data is shown for the
frequency plan in 3.6 Typical Performance. mLOx0RF plots can be found in section 3.6.2 Typical
Performance Plots: LO Harmonic Isolation. 0LOx1RF plot is identical to the plot of LO-RF
isolation.
Typical Down-conversion spurious suppression (dBc): Config A (B)
-10 dBm
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
RF Input
0xRF
1xRF
2xRF
3xRF
4xRF
5xRF
-
7 (13)
36 (38)
24 (36)
20 (20)
16 (16)
43 (51)
44 (39)
N/A
27 (21)
Reference
22 (21)
73 (75)
59 (53)
70 (72)
69 (57)
72 (75)
66 (57)
97 (100)
65 (65)
77 (92)
75 (74)
77 (89)
68 (71)
118 (119)
114 (99)
109 (115)
112 (104)
115 (118)
111 (104)
N/A
130 (129)
116 (133)
121 (123)
123 (131)
121 (123)
3.6.4 Typical Spurious Performance: Up-Conversion
Typical spurious data is taken by mixing an input within the IF band, with LO frequencies
(± m*LO ± n*IF), to create a spurious output within the RF output band. The mixer is swept
across the full spurious output band and the mean is calculated. The numbers shown in the table
below are for a -10 dBm IF input. Spurious suppression is scaled for different IF input power levels
by (n-1), where “n” is the IF spur order. For example, the 2IFx1LO spur is typically 68 dBc for a -
10 dBm input with a sine-wave LO, so a -20 dBm IF input creates a spur that is (2-1) x (-10 dB)
lower, or 78 dBc. Data is shown for the frequency plan in 3.6 Typical Performance.
Typical Up-conversion spurious suppression (dBc): Config A (B)
-10 dBm
0xLO
1xLO
2xLO
3xLO
4xLO
5xLO
RF Input
0xIF
-
23 (24)
Reference
68 (68)
27 (13)
26 (36)
36 (36)
13 (12)
37 (34)
35 (38)
N/A
1xIF
26 (22)
65 (63)
90 (96)
109 (103)
124 (124)
25 (24)
2xIF
67 (51)
74 (69)
67 (59)
71 (76)
3xIF
67 (67)
76 (81)
66 (63)
67 (74)
59 (58)
4xIF
109 (112)
115 (112)
108 (96)
114 (122)
110 (105)
106 (103)
106 (98)
104 (113)
108 (110)
104 (107)
5xIF
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MM1-1044H
4. Die Mounting Recommendations
4.1 Mounting and Bonding Recommendations
Marki MMICs should be attached directly to a ground plane with conductive epoxy. The
ground plane electrical impedance should be as low as practically possible. This will
prevent resonances and permit the best possible electrical performance. Datasheet
performance is only guaranteed in an environment with a low electrical impedance ground.
Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the
mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip.
Cure epoxy according to manufacturer instructions.
Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.
Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding
force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be
started on the chip and terminated on the package or substrate. All bonds should be as
short as possible <0.31 mm (12 mils).
Circuit Considerations – 50 Ω transmission lines should be used for all high frequency
connections in and out of the chip. Wirebonds should be kept as short as possible, with
multiple wirebonds recommended for higher frequency connections to reduce parasitic
inductance. In circumstances where the chip more than .001” thinner than the
substrate, a heat spreading spacer tab is optional to further reduce bondwire length and
parasitic inductance.
4.2 Handling Precautions
General Handling
Chips should be handled with care using tweezers or a vacuum collet. Users should take
precautions to protect chips from direct human contact that can deposit contaminants,
like perspiration and skin oils on any of the chip's surfaces.
Static Sensitivity
GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, and
transported only in static protected environments.
Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or
expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are
opened, chips should be stored in a dry nitrogen atmosphere.
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MM1-1044H
4.3 Bonding Diagram
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MM1-1044H
5. Mechanical Data
5.1 CH Package Outline Drawing
1. CH Substrate material is 0.004 in thick GaAs.
2. I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.
5.2 S Package Outline Drawing
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MM1-1044H
5.3 S-KKS Package Outline Drawing
Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice.
Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any
particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any
product.
© Marki Microwave, Inc.
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