LS5908-TO-71-6L [Linear]
Transistor,;
| 型号： | LS5908-TO-71-6L |
| 厂家： | 
Linear |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS5905 LS5906 LS5907
LS5908 LS5909
LOW LEAKAGE LOW DRIFT
MONOLITHIC DUAL N-CHANNEL JFET
FEATURES
LOW DRIFT
IΔVGS1-2/ΔT│=5µV/°C max.
IG=150fA TYP.
ULTRA LOW LEAKAGE
LOW PINCHOFF
VP=2V TYP.
Case & Body
ABSOLUTE MAXIMUM RATINGS1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
-55 to +150°C
-55 to +150°C
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor1
-VGSS
-IG(f)
-IG
Gate Voltage to Drain or Source 40V
Top View
SOIC
Top View
TO-78
Gate Forward Current
Gate Reverse Current
10mA
10µA
Maximum Power Dissipation
500mW2
Device Dissipation @ TA=25ºC - Total
ELECTRICAL CHARACTERISTICS @ 25ºC (unless otherwise noted)
SYMBOL CHARACTERISTIC LS5906 LS5907 LS5908 LS5909 LS5905 UNITS CONDITIONS
│∆VGS1-2/∆T│max. Drift vs. Temperature
5
10
20
40
40
µV/ºC
VDG = 10V, ID=30µA
TA = -55ºC to +125ºC
VDG =10V ID=30µA
│VGS1-2│max.
-IG Max
Offset Voltage
5
1
1
2
5
5
1
1
2
5
10
1
15
1
15
3
mV
pA
nA
pA
nA
Operating
-IG Max
High Temperature
Gate Reverse Current
Gate Reverse Current
1
1
3
TA=+125 ºC
-IGSS Max
-IGSS Max
2
2
5
VDS=0V
VGS=-20V
5
5
10
TA=+125 ºC
SYMBOL
BVGSS
CHARACTERISTIC
Breakdown Voltage
Gate-to-Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
TYP. MAX. UNITS CONDITIONS
-40
-60
--
--
--
V
V
VDS= 0
ID= -1µA
ID= 0
BVGGO
±40
IGG= ±1µA
IS= 0
Gfss
70
50
--
300
100
1
500
200
5
µS
µS
%
VDG= 10V
VDG= 10V
VGS= 0
f = 1kHz
Gfs
Typical Operation
ID= 30µA f = 1kHz
3
│Gfs1/Gfs2
│
Transconductance Ratio
DRAIN CURRENT
Full Conduction
IDSS
60
--
400
2
1000
5
µA
%
VDG= 10V
VGS= 0
3
│IDSS1/IDSS2
│
Drain Current Ratio
GATE VOLTAGE
VGS(off)
VGS
Gate-Source Cutoff Voltage
Operating Range
-0.6
--
-2
--
-4.5
-4
V
V
VDS= 10V
VDS= 10V
ID= 1nA
ID= 30µA
GATE CURRENT
IGGO
Gate-to-Gate Leakage
--
±1
--
pA
VGG= 20V
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
6/07/2012 Rev#A7 ECN# LS5905 LS5906 LS5907 LS5908 LS5909
SYMBOL
CHARACTERISTIC
OUTPUT CONDUCTANCE
Full Conduction
MIN.
TYP. MAX.
UNITS
CONDITIONS
goss
--
--
--
--
5
--
µS
µS
µS
VDG= 10V VGS= 0
gos
Operating
0.1
VDG= 10V ID= 30µA
│gos1-2
│
Differential
0.01
0.2
COMMON MODE REJECTION
CMRR
CMRR
-20 log │ΔVGS1-2/ΔVDS
-20 log │ΔVGS1-2/ΔVDS
NOISE
│
--
--
90
90
--
--
dB
dB
ΔVDS= 10 to 20V
ΔVDS= 5 to 10V
ID=30µA
ID=30µA
│
NF
en
Figure
--
--
--
1
dB
VDS= 10V VGS= 0
RG=10MΩ
f= 100Hz NBW=6Hz
Voltage
20
70
nV/√Hz
VDS= 10V ID= 30µA f= 10Hz
NBW=1Hz
CAPACITANCE
Input
CISS
CRSS
CDD
--
--
--
--
--
--
3
pF
pF
pF
VDS= 10V VGS= 0
VDS= 10V VGS= 0
f= 1MHz
f= 1MHz
Reverse Transfer
Drain-to-Drain
1.5
0.1
VDG= 20V ID= 30µA f= 1MHz
0.210
0.170
4
8
All dimensions in inches.
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired
2. Derate 4mWºC above 25ºC
3. Assume smaller value in the numerator.
Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing
high-quality discrete components. Expertise brought to LIS is based on processes and products developed
at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall,
a protégé of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide,
co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems.
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
6/07/2012 Rev#A7 ECN# LS5905 LS5906 LS5907 LS5908 LS5909
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