LS5909-PDIP [MICROSS]
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, PLASTIC, DIP-8;
| 型号： | LS5909-PDIP |
| 厂家： | 
MICROSS COMPONENTS |
| 描述： | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, PLASTIC, DIP-8 光电二极管 晶体管 |
| 文件： | 总1页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LS5909
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
FEATURES
LOW DRIFT
ULTRA LOW LEAKAGE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
The LS5909 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
| VGS1‐2 / T| = 5µV/°C TYP.
IG = 150fA TYP.
Vp = 2V TYP.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
improper orientation.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
Maximum Voltage and Current for Each Transistor – Note 1
+150°C
(See Packaging Information).
‐VGSS
‐VDSO
‐IG(f)
‐IG
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
40V
40V
10mA
10µA
Gate Reverse Current
LS5909 Benefits:
Maximum Power Dissipation
Device Dissipation @ Free Air – Total
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
40mW @ +125°C
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| VGS1‐2 / T| max.
DRIFT VS.
TEMPERATURE
40
µV/°C
VDG=10V, ID=30µA
TA=‐55°C to +125°C
VDG=10V, ID=30µA
| V GS1‐2 | max.
OFFSET VOLTAGE
15
mV
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVGSS
BVGGO
CHARACTERISTICS
Breakdown Voltage
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
MIN.
40
40
TYP.
60
‐‐
MAX.
‐‐
‐‐
UNITS
V
V
CONDITIONS
VDS = 0
IG= 1nA
ID=1nA
ID= 0
IS= 0
YfSS
YfS
|YFS1‐2 / Y FS|
70
50
‐‐
300
100
1
500
200
5
µmho
µmho
%
VDG= 10V
VDG= 10V
VGS= 0V f = 1kHz
ID= 30µA f = 1kHz
Typical Operation
Mismatch
DRAIN CURRENT
Full Conduction
IDSS
|IDSS1‐2 / IDSS
60
‐‐
400
2
1000
5
µA
%
VDG= 10V
VGS= 0V
|
Mismatch at Full Conduction
Click To Buy
GATE VOLTAGE
VGS(off) or Vp
VGS(on)
Pinchoff voltage
Operating Range
GATE CURRENT
Operating
0.6
‐‐
2
‐‐
4.5
4
V
V
VDS= 10V
VDS=10V
ID= 1nA
ID=30µA
‐IGmax.
‐IGmax.
‐IGSSmax.
‐IGSSmax.
IGGO
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
1
1
1
2
5
‐‐
pA
nA
pA
nA
pA
VDG= 10V ID= 30µA
TA= +125°C
VDS =0V VGS= 20V
TA= +125°C
High Temperature
At Full Conduction
High Temperature
Gate‐to‐Gate Leakage
OUTPUT CONDUCTANCE
Full Conduction
Operating
VGG= 20V
YOSS
YOS
|YOS1‐2
‐‐
‐‐
‐‐
‐‐
0.1
0.01
5
0.1
0.1
VDG= 10V
VDG= 10V
VGS= 0V
ID=30µA
µmho
dB
|
Differential
COMMON MODE REJECTION
‐20 log |∆VGS1‐2/∆VDS|
‐20 log |∆VGS1‐2/∆VDS|
NOISE
CMR
CMR
‐‐
‐‐
90
90
‐‐
‐‐
∆VDS = 10 to 20V
∆VDS = 5 to 10V
VDS= 10V VGS= 0V
ID=30µA
ID=30µA
RG= 10MΩ
NF
en
Figure
Voltage
‐‐
‐‐
‐‐
20
1
70
dB
nV/√Hz
f= 100Hz
NBW= 6Hz
VDG=10V ID=30µA f=10Hz NBW=1Hz
CAPACITANCE
CISS
CRSS
CDD
Input
Reverse Transfer
Drain‐to‐Drain
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
3
1.5
0.1
VDS= 10V
VGS= 0V
f= 1MHz
pF
VDG = 20V ID=30µA
Micross Components Europe
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
SOIC / PDIP (Top View)
Available Packages:
LS5909 in PDIP / SOIC
LS5909 available as bare die
Please contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
相关型号：
LS5909-SOIC
Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, SOIC-8
MICROSS
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