MMBD2836LT1 [LRC]
Monolithic Dual Switching Diodes; 单片双开关二极管
| 型号： | MMBD2836LT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Monolithic Dual Switching Diodes |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diodes
MMBD2835LT1
MMBD2836LT1
CATHODE
1
ANODE
3
2
CATHODE
3
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
35
Unit
CASE 318–08, STYLE 12
SOT– 23 (TO–236AB)
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
V
Vdc
R
75
Forward Current
I F
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1)
PD
225
mW
T A = 25°C
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R θ JA
PD
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R θ JA
T J , T stg
–55 to +150
DEVICE MARKING
MMBD2835LT1 = A3X;MMBD2836LT1=A2X
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)( EACH DIODE )
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) MMBD2835LT1
MMBD2836LT1
V (BR)
IR
35
75
—
—
Vdc
Reverse Voltage Leakage Current
nAdc
(V R = 30 Vdc)
MMBD2835LT1
MMBD2836LT1
—
—
100
100
(V R = 50 Vdc)
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage(I F = 10 mAdc)
(I F = 50 mAdc)
C T
V F
—
4.0
pF
—
—
—
—
1.0
1.0
1.2
4.0
Vdc
(I F = 100 mAdc)
Reverse Recovery Time(I F = I R = 10 mAdc, I R(REC)= 1.0mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
trr
ns
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G20–1/2
LESHAN RADIO COMPANY, LTD.
MMBD2835LT1 MMBD2836LT1
2.0 k
820 Ω
+10 V
I F
t r
t p
t
0.1µF
I F
100 µH
0.1 µF
t rr
t
10%
90%
DUT
i
= 1.0 mA
R(REC)
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
50 Ω OUTPUT
PULSE
GENERATOR
I R
OUTPUT PULSE
INPUTSIGNAL
(I F = I R = 10 mA; MEASURED
V R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA.
Notes: 3. t p » t rr
Figure 1. Recovery Time Equivalent Test Circuit
CURVES APPLICABLE TO EACH CATHODE
10
100
T
T
A =150°C
A =125°C
T
A = 85°C
T
A= –40°C
1.0
0.1
10
T
T
A =85°C
A =55°C
T
A = 25°C
1.0
0.01
T
A =25°C
20
0.001
0.1
0
10
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
V F , FORWARD VOLTAGE (VOLTS)
V R , REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.75
1.50
1.25
1.00
0.75
0
2.0
4.0
6.0
8.0
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G20–2/2
相关型号：
MMBD2836XLT2
DIODE 0.1 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, CASE 318-03, 3 PIN, Signal Diode
ONSEMI
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