DTD143EK [LRC]
Digital transistors(built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTD143EK |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Digital transistors(built-in resistors) |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isola tion to allow
positive biasing of the input. They also have the advantage of almost completely
eliminating parasitic effects.
DTD143EK
DTD143ES
3) Only the on/ off conditions need to be set for operation, making device design
easy.
• Structure
+
2.9 0.2
PNP digital transistor (with built-in resistors)
+
1.9 0.2
•Equivalent circuit
+
0.95 0.95
+
0.8 0.1
(2)
(1)
0 ~ 0.1
(3)
(1) GND
(2) IN
0.1
0.06
0.15 +-
0.1
0.05
0.4 +-
R1
OUT
(3) OUT
IN
R2
All terminals have same dimensions
DTD143EK
GND
OUT
EIAJ: SC— 59
IN
GND
+
2.9 0.2
+
0.95 +- 0.2
0.1
1.9 0.2
+
0.95 0.95
+
0.45 0.1
(2)
(1)
0 ~ 0.1
(3)
0.2Min
(1) GND
(2) IN
0.1
0.06
0.15 +-
0.1
0.05
0.4 +-
(3) OUT
All terminals have same dimensions
DTD143ES
EIAJ: SOT— 23
Absolute maximum ratings(Ta=25 °C)
•
limits( DTC143E
)
Parameter
symbol
unit
S
K
50
Supply voltage
V
V
V
cc
Input voltage
V
–10~+30
500
IN
Output current
IC
Pd
T j
mA
Power dissipation
Junction temperature
Storage temperature
200
300
mW
°C
150
T stg
–55~+150
°C
P18–1/2
LESHAN RADIO COMPANY, LTD.
DTD143EK DTD143ES
Elecrical characteristics(Ta=25°C)
•
Parameter
symbol
Min.
—
Typ.
—
Max.
0.5
—
Unit
V
Conditions
V
V CC= 5V, I O=100µA
V O= 0.3V, I O=20mA
I O / I I =50mA/2.5mA
I(off)
Input voltage
V I(on)
V O(on)
I I
3
—
Output Voltage
—
0.1
—
0.3
1.8
0.5
—
V
mA
µA
—
Input current
—
V =5V
I
Output current
I O(off)
G I
—
—
V CC= 50V, V I= 0 V
DC current gain
47
3.29
0.8
—
—
V O= 5V, I O= 50mA
Input resistance
R1
4.7
1
6.11
1.2
—
KΩ
—
—
Resistance ratio
R 2 / R 1
—
Transition frequency
*Transition frequency of the device
f
200
MHz
V CE=10V, I E= –50 mA, f=100MHz*
T
ELECTRICAL CHARACTERISTIC CURVES
100
10m
5m
V
=
0.3V
V
CC= 5 V
O
50
20
T
A = 100°C
25°C
2m
–40°C
1m
500µ
10
5
T
A = –40°C
25°C
200µ
100°C
2
100µ
50µ
20µ
1
0.5
0.2
10µ
5µ
2µ
0.1
1µ
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT: I O (A)
INPUT VOLTAGE: V I(ON) (V)
Figure 1. Input voltage vs.output current
(ON characteristics)
Figure 2. Output current vs.input voltage
(OFF characteristics)
1.0
1K
I
O / I I = 20
V
= 5 V
O
0.5
0.2
500
200
T
A = 100°C
25°C
–40°C
T
A = 100°C
25°C
0.1
100
50
0.05
–40°C
0.02
20
0.01
.005
10
5
.002
2
.001
1
500µ 1m
2m
5m 10m 20m
50m 100m 200m
500m
500µ 1m
2m
5m 10m 20m
50m 100m 200m
500m
OUTPUT CURRENT: I O (A)
OUTPUT CURRENT: I O (A)
Figure 4. Output voltage vs.output current
Figure 3. DC current gain vs.output current
P18–2/2
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